KR20190116056A - 기판 처리 시스템, 기판 처리 방법 및 기억 매체 - Google Patents

기판 처리 시스템, 기판 처리 방법 및 기억 매체

Info

Publication number
KR20190116056A
KR20190116056A KR1020190027591A KR20190027591A KR20190116056A KR 20190116056 A KR20190116056 A KR 20190116056A KR 1020190027591 A KR1020190027591 A KR 1020190027591A KR 20190027591 A KR20190027591 A KR 20190027591A KR 20190116056 A KR20190116056 A KR 20190116056A
Authority
KR
South Korea
Prior art keywords
substrate
processed
adhesive member
board
chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020190027591A
Other languages
English (en)
Korean (ko)
Inventor
타케시 타무라
타이치 모리
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20190116056A publication Critical patent/KR20190116056A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H01L21/67092—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H01L21/02013—
    • H01L21/185—
    • H01L21/304—
    • H01L21/67098—
    • H01L21/6836—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
KR1020190027591A 2018-04-03 2019-03-11 기판 처리 시스템, 기판 처리 방법 및 기억 매체 Ceased KR20190116056A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018071298A JP2019186265A (ja) 2018-04-03 2018-04-03 基板処理システム、基板処理方法、プログラム及びコンピュータ記憶媒体
JPJP-P-2018-071298 2018-04-03

Publications (1)

Publication Number Publication Date
KR20190116056A true KR20190116056A (ko) 2019-10-14

Family

ID=68171755

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190027591A Ceased KR20190116056A (ko) 2018-04-03 2019-03-11 기판 처리 시스템, 기판 처리 방법 및 기억 매체

Country Status (2)

Country Link
JP (1) JP2019186265A (https=)
KR (1) KR20190116056A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210090911A (ko) * 2020-01-13 2021-07-21 (주)제이쓰리 반도체 웨이퍼 형상을 제어하는 웨이퍼 가공기술

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7400360B2 (ja) * 2019-11-06 2023-12-19 富士電機株式会社 半導体素子の製造方法
JP7688605B2 (ja) * 2022-06-08 2025-06-04 タツモ株式会社 接合装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015159499A (ja) 2014-02-25 2015-09-03 日本碍子株式会社 複合基板の製法及び複合基板

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2848337B1 (fr) * 2002-12-09 2005-09-09 Commissariat Energie Atomique Procede de realisation d'une structure complexe par assemblage de structures contraintes
JP5528405B2 (ja) * 2011-09-07 2014-06-25 東京エレクトロン株式会社 接合方法、プログラム、コンピュータ記憶媒体及び接合システム
JP6082654B2 (ja) * 2013-05-22 2017-02-15 株式会社ディスコ 研削方法
JP5816388B1 (ja) * 2015-05-07 2015-11-18 信越エンジニアリング株式会社 貼合デバイスの製造方法及び貼合デバイスの製造装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015159499A (ja) 2014-02-25 2015-09-03 日本碍子株式会社 複合基板の製法及び複合基板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210090911A (ko) * 2020-01-13 2021-07-21 (주)제이쓰리 반도체 웨이퍼 형상을 제어하는 웨이퍼 가공기술

Also Published As

Publication number Publication date
JP2019186265A (ja) 2019-10-24

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P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000