KR20190108179A - 물리 기상 증착 챔버 타겟용 냉각 링 - Google Patents

물리 기상 증착 챔버 타겟용 냉각 링 Download PDF

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Publication number
KR20190108179A
KR20190108179A KR1020197026543A KR20197026543A KR20190108179A KR 20190108179 A KR20190108179 A KR 20190108179A KR 1020197026543 A KR1020197026543 A KR 1020197026543A KR 20197026543 A KR20197026543 A KR 20197026543A KR 20190108179 A KR20190108179 A KR 20190108179A
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KR
South Korea
Prior art keywords
target
cooling ring
coupled
cap
coolant
Prior art date
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Ceased
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KR1020197026543A
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English (en)
Korean (ko)
Inventor
브라이언 웨스트
고이치 요시도메
랄프 호프만
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20190108179A publication Critical patent/KR20190108179A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020197026543A 2011-09-02 2012-08-28 물리 기상 증착 챔버 타겟용 냉각 링 Ceased KR20190108179A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161530922P 2011-09-02 2011-09-02
US61/530,922 2011-09-02
US13/584,972 2012-08-14
US13/584,972 US9096927B2 (en) 2011-09-02 2012-08-14 Cooling ring for physical vapor deposition chamber target
PCT/US2012/052680 WO2013033102A1 (en) 2011-09-02 2012-08-28 Cooling ring for physical vapor deposition chamber target

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147008661A Division KR20140057376A (ko) 2011-09-02 2012-08-28 물리 기상 증착 챔버 타겟용 냉각 링

Publications (1)

Publication Number Publication Date
KR20190108179A true KR20190108179A (ko) 2019-09-23

Family

ID=47752280

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020197026543A Ceased KR20190108179A (ko) 2011-09-02 2012-08-28 물리 기상 증착 챔버 타겟용 냉각 링
KR1020147008661A Ceased KR20140057376A (ko) 2011-09-02 2012-08-28 물리 기상 증착 챔버 타겟용 냉각 링

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020147008661A Ceased KR20140057376A (ko) 2011-09-02 2012-08-28 물리 기상 증착 챔버 타겟용 냉각 링

Country Status (6)

Country Link
US (1) US9096927B2 (enExample)
JP (2) JP2014525516A (enExample)
KR (2) KR20190108179A (enExample)
CN (1) CN103764869B (enExample)
TW (1) TWI557251B (enExample)
WO (1) WO2013033102A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230000464U (ko) 2021-08-26 2023-03-07 웨이하이 디엠에스 주식회사 Ak 건조 구간의 베어링 급수 구조

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US20140147593A1 (en) * 2012-11-27 2014-05-29 Intermolecular, Inc. Liquid Cooled Sputter Apertured Shields
US20150354054A1 (en) * 2014-06-06 2015-12-10 Applied Materials, Inc. Cooled process tool adapter for use in substrate processing chambers
US10546733B2 (en) * 2014-12-31 2020-01-28 Applied Materials, Inc. One-piece process kit shield
US10662529B2 (en) 2016-01-05 2020-05-26 Applied Materials, Inc. Cooled gas feed block with baffle and nozzle for HDP-CVD
US10471542B1 (en) * 2017-06-27 2019-11-12 United States Of America As Represented By The Administrator Of Nasa Cladding and freeform deposition for coolant channel closeout
US11189472B2 (en) 2017-07-17 2021-11-30 Applied Materials, Inc. Cathode assembly having a dual position magnetron and centrally fed coolant
US10513432B2 (en) 2017-07-31 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Anti-stiction process for MEMS device
CN113366605B (zh) * 2019-02-05 2024-02-20 应用材料公司 沉积设备和用于监测沉积设备的方法
US11492697B2 (en) 2020-06-22 2022-11-08 Applied Materials, Inc. Apparatus for improved anode-cathode ratio for rf chambers
US11948784B2 (en) 2021-10-21 2024-04-02 Applied Materials, Inc. Tilted PVD source with rotating pedestal
US12195843B2 (en) 2023-01-19 2025-01-14 Applied Materials, Inc. Multicathode PVD system for high aspect ratio barrier seed deposition
US12417903B2 (en) 2023-02-16 2025-09-16 Applied Materials, Inc. Physical vapor deposition source and chamber assembly
US12191234B2 (en) * 2023-05-17 2025-01-07 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same
US12283490B1 (en) 2023-12-21 2025-04-22 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same

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US4060470A (en) * 1974-12-06 1977-11-29 Clarke Peter J Sputtering apparatus and method
ATE10512T1 (de) * 1980-08-08 1984-12-15 Battelle Development Corporation Vorrichtung zur beschichtung von substraten mittels hochleistungskathodenzerstaeubung sowie zerstaeuberkathode fuer diese vorrichtung.
JPH02285069A (ja) * 1989-04-25 1990-11-22 Tokyo Electron Ltd スパッタ装置
JPH02301558A (ja) * 1989-05-15 1990-12-13 Tokyo Electron Ltd スパッタ装置
JP2746695B2 (ja) * 1989-10-20 1998-05-06 東京エレクトロン株式会社 スパッタ装置及びスパッタ方法
US6689254B1 (en) 1990-10-31 2004-02-10 Tokyo Electron Limited Sputtering apparatus with isolated coolant and sputtering target therefor
JP3036895B2 (ja) * 1991-05-28 2000-04-24 東京エレクトロン株式会社 スパッタ装置
KR100188454B1 (ko) * 1991-05-28 1999-06-01 이노우에 아키라 기판 처리 장치
JPH06172988A (ja) * 1992-12-01 1994-06-21 Nissin Electric Co Ltd スパッタターゲットのバッキングプレート
US5487822A (en) * 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
US6039848A (en) 1995-07-10 2000-03-21 Cvc Products, Inc. Ultra-high vacuum apparatus and method for high productivity physical vapor deposition.
WO1997003221A1 (en) * 1995-07-10 1997-01-30 Cvc Products, Inc. Magnetron cathode apparatus and method for sputtering
JPH10287975A (ja) 1997-04-16 1998-10-27 Sony Corp スパッタリング装置及びスパッタリング装置用バッキングプレート
US5953827A (en) 1997-11-05 1999-09-21 Applied Materials, Inc. Magnetron with cooling system for process chamber of processing system
US6117245A (en) * 1998-04-08 2000-09-12 Applied Materials, Inc. Method and apparatus for controlling cooling and heating fluids for a gas distribution plate
JP4435896B2 (ja) * 1999-03-17 2010-03-24 キヤノンアネルバ株式会社 高周波スパッタリング装置及び薄膜作成方法
US6228236B1 (en) 1999-10-22 2001-05-08 Applied Materials, Inc. Sputter magnetron having two rotation diameters
US6641701B1 (en) * 2000-06-14 2003-11-04 Applied Materials, Inc. Cooling system for magnetron sputtering apparatus
TW200300951A (en) * 2001-12-10 2003-06-16 Tokyo Electron Ltd Method and device for removing harmonics in semiconductor plasma processing systems
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JP4957992B2 (ja) * 2006-12-26 2012-06-20 株式会社Ｊｖｃケンウッド マグネトロンスパッタリング装置及びそれを用いた成膜方法
JP5427572B2 (ja) * 2009-12-01 2014-02-26 昭和電工株式会社 マグネトロンスパッタ装置、インライン式成膜装置、磁気記録媒体の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230000464U (ko) 2021-08-26 2023-03-07 웨이하이 디엠에스 주식회사 Ak 건조 구간의 베어링 급수 구조

Also Published As

Publication number Publication date
US20130056347A1 (en) 2013-03-07
JP2014525516A (ja) 2014-09-29
CN103764869A (zh) 2014-04-30
TWI557251B (zh) 2016-11-11
US9096927B2 (en) 2015-08-04
WO2013033102A1 (en) 2013-03-07
KR20140057376A (ko) 2014-05-12
TW201313937A (zh) 2013-04-01
CN103764869B (zh) 2016-04-27
JP2017133111A (ja) 2017-08-03

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