JP2014525516A - 物理気相堆積チャンバターゲット用の冷却リング - Google Patents

物理気相堆積チャンバターゲット用の冷却リング Download PDF

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Publication number
JP2014525516A
JP2014525516A JP2014528522A JP2014528522A JP2014525516A JP 2014525516 A JP2014525516 A JP 2014525516A JP 2014528522 A JP2014528522 A JP 2014528522A JP 2014528522 A JP2014528522 A JP 2014528522A JP 2014525516 A JP2014525516 A JP 2014525516A
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JP
Japan
Prior art keywords
target
cooling ring
coupled
refrigerant
cap
Prior art date
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Pending
Application number
JP2014528522A
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English (en)
Japanese (ja)
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JP2014525516A5 (enExample
Inventor
ブライアン ウェスト
剛一 吉留
ラルフ ホフマン
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Applied Materials Inc
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Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2014525516A publication Critical patent/JP2014525516A/ja
Publication of JP2014525516A5 publication Critical patent/JP2014525516A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2014528522A 2011-09-02 2012-08-28 物理気相堆積チャンバターゲット用の冷却リング Pending JP2014525516A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161530922P 2011-09-02 2011-09-02
US61/530,922 2011-09-02
US13/584,972 2012-08-14
US13/584,972 US9096927B2 (en) 2011-09-02 2012-08-14 Cooling ring for physical vapor deposition chamber target
PCT/US2012/052680 WO2013033102A1 (en) 2011-09-02 2012-08-28 Cooling ring for physical vapor deposition chamber target

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017082646A Division JP2017133111A (ja) 2011-09-02 2017-04-19 物理気相堆積チャンバターゲット用の冷却リング

Publications (2)

Publication Number Publication Date
JP2014525516A true JP2014525516A (ja) 2014-09-29
JP2014525516A5 JP2014525516A5 (enExample) 2015-09-10

Family

ID=47752280

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2014528522A Pending JP2014525516A (ja) 2011-09-02 2012-08-28 物理気相堆積チャンバターゲット用の冷却リング
JP2017082646A Pending JP2017133111A (ja) 2011-09-02 2017-04-19 物理気相堆積チャンバターゲット用の冷却リング

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017082646A Pending JP2017133111A (ja) 2011-09-02 2017-04-19 物理気相堆積チャンバターゲット用の冷却リング

Country Status (6)

Country Link
US (1) US9096927B2 (enExample)
JP (2) JP2014525516A (enExample)
KR (2) KR20190108179A (enExample)
CN (1) CN103764869B (enExample)
TW (1) TWI557251B (enExample)
WO (1) WO2013033102A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140147593A1 (en) * 2012-11-27 2014-05-29 Intermolecular, Inc. Liquid Cooled Sputter Apertured Shields
US20150354054A1 (en) * 2014-06-06 2015-12-10 Applied Materials, Inc. Cooled process tool adapter for use in substrate processing chambers
US10546733B2 (en) * 2014-12-31 2020-01-28 Applied Materials, Inc. One-piece process kit shield
US10662529B2 (en) * 2016-01-05 2020-05-26 Applied Materials, Inc. Cooled gas feed block with baffle and nozzle for HDP-CVD
US10471542B1 (en) * 2017-06-27 2019-11-12 United States Of America As Represented By The Administrator Of Nasa Cladding and freeform deposition for coolant channel closeout
US11189472B2 (en) 2017-07-17 2021-11-30 Applied Materials, Inc. Cathode assembly having a dual position magnetron and centrally fed coolant
US10513432B2 (en) 2017-07-31 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Anti-stiction process for MEMS device
KR102598114B1 (ko) * 2019-02-05 2023-11-02 어플라이드 머티어리얼스, 인코포레이티드 증착 장치 및 증착 장치를 모니터링하기 위한 방법
US11492697B2 (en) 2020-06-22 2022-11-08 Applied Materials, Inc. Apparatus for improved anode-cathode ratio for rf chambers
CN215636446U (zh) 2021-08-26 2022-01-25 威海电美世光机电有限公司 一种ak干燥区间的轴承供水结构
US11948784B2 (en) 2021-10-21 2024-04-02 Applied Materials, Inc. Tilted PVD source with rotating pedestal
US12195843B2 (en) 2023-01-19 2025-01-14 Applied Materials, Inc. Multicathode PVD system for high aspect ratio barrier seed deposition
US12417903B2 (en) 2023-02-16 2025-09-16 Applied Materials, Inc. Physical vapor deposition source and chamber assembly
US12191234B2 (en) * 2023-05-17 2025-01-07 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same
US12283490B1 (en) 2023-12-21 2025-04-22 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02285069A (ja) * 1989-04-25 1990-11-22 Tokyo Electron Ltd スパッタ装置
JPH02301558A (ja) * 1989-05-15 1990-12-13 Tokyo Electron Ltd スパッタ装置
JPH04350929A (ja) * 1991-05-28 1992-12-04 Tokyo Electron Ltd スパッタ装置
US5267607A (en) * 1991-05-28 1993-12-07 Tokyo Electron Limited Substrate processing apparatus
JPH06172988A (ja) * 1992-12-01 1994-06-21 Nissin Electric Co Ltd スパッタターゲットのバッキングプレート
JPH07197248A (ja) * 1993-11-24 1995-08-01 Applied Materials Inc 一体型スパッタリングターゲット組立体
US5876573A (en) * 1995-07-10 1999-03-02 Cvc, Inc. High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition
JP2000265268A (ja) * 1999-03-17 2000-09-26 Anelva Corp 高周波スパッタリング装置
JP2008156732A (ja) * 2006-12-26 2008-07-10 Victor Co Of Japan Ltd マグネトロンスパッタリング装置及びそれを用いた成膜方法
JP2011117019A (ja) * 2009-12-01 2011-06-16 Showa Denko Kk マグネトロンスパッタ装置、インライン式成膜装置、磁気記録媒体の製造方法、磁気記録再生装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060470A (en) * 1974-12-06 1977-11-29 Clarke Peter J Sputtering apparatus and method
DE3069702D1 (en) * 1980-08-08 1985-01-10 Battelle Development Corp Apparatus for coating substrates by high-rate cathodic sputtering, as well as sputtering cathode for such apparatus
JP2746695B2 (ja) * 1989-10-20 1998-05-06 東京エレクトロン株式会社 スパッタ装置及びスパッタ方法
US6689254B1 (en) 1990-10-31 2004-02-10 Tokyo Electron Limited Sputtering apparatus with isolated coolant and sputtering target therefor
US6039848A (en) 1995-07-10 2000-03-21 Cvc Products, Inc. Ultra-high vacuum apparatus and method for high productivity physical vapor deposition.
JPH10287975A (ja) 1997-04-16 1998-10-27 Sony Corp スパッタリング装置及びスパッタリング装置用バッキングプレート
US5953827A (en) 1997-11-05 1999-09-21 Applied Materials, Inc. Magnetron with cooling system for process chamber of processing system
US6117245A (en) * 1998-04-08 2000-09-12 Applied Materials, Inc. Method and apparatus for controlling cooling and heating fluids for a gas distribution plate
US6228236B1 (en) 1999-10-22 2001-05-08 Applied Materials, Inc. Sputter magnetron having two rotation diameters
US6641701B1 (en) * 2000-06-14 2003-11-04 Applied Materials, Inc. Cooling system for magnetron sputtering apparatus
TW200300951A (en) * 2001-12-10 2003-06-16 Tokyo Electron Ltd Method and device for removing harmonics in semiconductor plasma processing systems
JP4563760B2 (ja) * 2004-09-24 2010-10-13 株式会社日立国際電気 半導体製造装置及び半導体装置の製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02285069A (ja) * 1989-04-25 1990-11-22 Tokyo Electron Ltd スパッタ装置
JPH02301558A (ja) * 1989-05-15 1990-12-13 Tokyo Electron Ltd スパッタ装置
JPH04350929A (ja) * 1991-05-28 1992-12-04 Tokyo Electron Ltd スパッタ装置
US5267607A (en) * 1991-05-28 1993-12-07 Tokyo Electron Limited Substrate processing apparatus
JPH06172988A (ja) * 1992-12-01 1994-06-21 Nissin Electric Co Ltd スパッタターゲットのバッキングプレート
JPH07197248A (ja) * 1993-11-24 1995-08-01 Applied Materials Inc 一体型スパッタリングターゲット組立体
US5876573A (en) * 1995-07-10 1999-03-02 Cvc, Inc. High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition
JP2000265268A (ja) * 1999-03-17 2000-09-26 Anelva Corp 高周波スパッタリング装置
JP2008156732A (ja) * 2006-12-26 2008-07-10 Victor Co Of Japan Ltd マグネトロンスパッタリング装置及びそれを用いた成膜方法
JP2011117019A (ja) * 2009-12-01 2011-06-16 Showa Denko Kk マグネトロンスパッタ装置、インライン式成膜装置、磁気記録媒体の製造方法、磁気記録再生装置

Also Published As

Publication number Publication date
US20130056347A1 (en) 2013-03-07
US9096927B2 (en) 2015-08-04
CN103764869A (zh) 2014-04-30
KR20190108179A (ko) 2019-09-23
WO2013033102A1 (en) 2013-03-07
TW201313937A (zh) 2013-04-01
KR20140057376A (ko) 2014-05-12
TWI557251B (zh) 2016-11-11
CN103764869B (zh) 2016-04-27
JP2017133111A (ja) 2017-08-03

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