JP2018502224A - Pvd誘電体堆積ための装置 - Google Patents
Pvd誘電体堆積ための装置 Download PDFInfo
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- JP2018502224A JP2018502224A JP2017550458A JP2017550458A JP2018502224A JP 2018502224 A JP2018502224 A JP 2018502224A JP 2017550458 A JP2017550458 A JP 2017550458A JP 2017550458 A JP2017550458 A JP 2017550458A JP 2018502224 A JP2018502224 A JP 2018502224A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims (15)
- 内側ターゲット組立体に結合された内側マグネトロン組立体と、
外側ターゲット組立体に結合された外側マグネット組立体であって、前記内側マグネトロン組立体および前記内側ターゲット組立体が前記外側マグネット組立体および前記外側ターゲット組立体から電気的に絶縁されている、外側マグネット組立体と、
を備える、物理的気相堆積チャンバのチャンバリッド。 - 前記内側マグネトロン組立体が回転するマグネトロンを含み、前記外側マグネトロン組立体が1つまたは複数の静止したマグネットを含む、請求項1に記載のチャンバリッド。
- 前記内側マグネトロン組立体が、前記内側マグネトロン組立体を介して前記内側ターゲット組立体にDCパルス化電力を提供するように構成されたDC電源に結合されている、請求項1に記載のチャンバリッド。
- 前記外側マグネトロン組立体が、前記外側マグネトロン組立体を介して前記外側ターゲット組立体にDCパルス化電力を提供するように構成された前記DC電源に結合されている、請求項3に記載のチャンバリッド。
- 前記DC電源が前記内側ターゲット組立体および前記外側ターゲット組立体にパルス化DC電力を別々に提供するように構成されている、請求項4に記載のチャンバリッド。
- 前記内側マグネトロン組立体が回転するシャントに結合された複数対のマグネットを含む、請求項1から5までのいずれか1項に記載のチャンバリッド。
- 前記内側マグネトロン組立体が、流体密閉された、冷却流体を保持するように構成された内側マグネトロンハウジングを含む、請求項1から5までのいずれか1項に記載のチャンバリッド。
- 前記外側マグネトロン組立体が回転しないシャントに結合された外側の対のマグネットを含む、請求項1から5までのいずれか1項に記載のチャンバリッド。
- 前記回転しないシャントが、前記外側の対のマグネットの前記外側ターゲット組立体からの垂直距離を調整するように垂直に移動可能である、請求項8に記載のチャンバリッド。
- 前記外側マグネトロン組立体が外側マグネトロンハウジングを含み、前記外側マグネトロンハウジングが、前記外側ターゲット組立体の外側ターゲットバッキング板に形成された冷却剤チャネルに流体結合された1つまたは複数の流体チャネルを含む、請求項1から5までのいずれか1項に記載のチャンバリッド。
- 前記内側ターゲット組立体と前記外側ターゲット組立体との間に配置された間隙が、約0.5mmから約2.5mmの幅であり、前記内側マグネトロン組立体に含まれる1対の内側マグネットの下に配置されている、請求項1から5までのいずれか1項に記載のチャンバリッド。
- 内側ターゲット組立体に結合された内側マグネトロン組立体であって、冷却剤を含むように構成された内側マグネトロンハウジングを含む、内側マグネトロン組立体と、
外側ターゲット組立体に結合された外側マグネトロン組立体であって、前記外側ターゲット組立体が冷却剤チャネルを含む外側ターゲットバッキング板を含み、前記外側マグネトロン組立体が前記外側ターゲット組立体に形成された前記冷却剤チャネルに冷却剤を供給するように形成された冷却剤チャネルを有する外側マグネトロンハウジングを含む、外側マグネトロン組立体と、
を備える物理的気相堆積チャンバ。 - 前記内側マグネトロン組立体が回転するマグネトロンを含み、前記外側マグネトロン組立体が1つまたは複数の静止したマグネットを含む、請求項12に記載の物理的気相堆積チャンバ。
- 前記内側マグネトロンハウジングが、前記内側マグネトロンハウジングを介して前記内側ターゲット組立体にDCパルス化電力を提供するように構成されたDC電源に結合されている、請求項12に記載の物理的気相堆積チャンバ。
- 前記外側マグネトロンハウジングが、前記外側マグネトロンハウジングを介して前記外側ターゲット組立体にDCパルス化電力を提供するように構成された前記DC電源に結合され、前記DC電源が前記内側ターゲット組立体および前記外側ターゲット組立体にパルス化DC電力を別々に提供するように構成されている、請求項14に記載の物理的気相堆積チャンバ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462091607P | 2014-12-14 | 2014-12-14 | |
US62/091,607 | 2014-12-14 | ||
US14/616,895 | 2015-02-09 | ||
US14/616,895 US9928997B2 (en) | 2014-12-14 | 2015-02-09 | Apparatus for PVD dielectric deposition |
PCT/US2015/055648 WO2016099635A2 (en) | 2014-12-14 | 2015-10-15 | Apparatus for pvd dielectric deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2018502224A true JP2018502224A (ja) | 2018-01-25 |
Family
ID=56111851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017550458A Pending JP2018502224A (ja) | 2014-12-14 | 2015-10-15 | Pvd誘電体堆積ための装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9928997B2 (ja) |
JP (1) | JP2018502224A (ja) |
KR (1) | KR20170094442A (ja) |
CN (2) | CN107004580B (ja) |
TW (1) | TWI682048B (ja) |
WO (1) | WO2016099635A2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11024490B2 (en) * | 2017-12-11 | 2021-06-01 | Applied Materials, Inc. | Magnetron having enhanced target cooling configuration |
TW202244295A (zh) * | 2018-06-19 | 2022-11-16 | 美商應用材料股份有限公司 | 具有多陰極的沉積系統 |
KR20220133654A (ko) * | 2021-03-25 | 2022-10-05 | 에스케이하이닉스 주식회사 | 향상된 코팅층 또는 실드를 포함하는 pvd 챔버용 실드 구조체 |
CN113667949B (zh) * | 2021-08-19 | 2023-07-25 | 深圳市华星光电半导体显示技术有限公司 | 磁控溅射设备 |
DE102022000936A1 (de) | 2022-03-17 | 2023-09-21 | Singulus Technologies Aktiengesellschaft | Beschichtungsmodul mit verbesserter Kathodenanordnung |
CN115241026B (zh) * | 2022-09-26 | 2022-11-29 | 陛通半导体设备(苏州)有限公司 | 旋转装置及磁控镀膜设备 |
Citations (5)
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JPS6199674A (ja) * | 1984-10-22 | 1986-05-17 | Hitachi Ltd | スパツタ電極 |
JP2002004040A (ja) * | 2000-06-16 | 2002-01-09 | Anelva Corp | 高周波スパッタリング装置 |
JP2003077975A (ja) * | 2001-08-31 | 2003-03-14 | Anelva Corp | マルチチャンバースパッタ処理装置 |
JP2007302921A (ja) * | 2006-05-09 | 2007-11-22 | Cyg Gijutsu Kenkyusho Kk | マグネトロンカソードとそれを搭載したスパッタ装置 |
US20130136873A1 (en) * | 2011-11-30 | 2013-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method with deposition chamber having multiple targets and magnets |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0144838B1 (de) * | 1983-12-05 | 1989-10-11 | Leybold Aktiengesellschaft | Magnetronkatode zum Zerstäuben ferromagnetischer Targets |
SG65709A1 (en) * | 1996-12-16 | 1999-06-22 | Applied Materials Inc | Method and apparatus for selectively attracting or repelling ionized materials from a target surface in physical vapor deposition |
JPH10219940A (ja) | 1997-02-12 | 1998-08-18 | Asahi Glass Co Ltd | 軒 樋 |
US6641701B1 (en) * | 2000-06-14 | 2003-11-04 | Applied Materials, Inc. | Cooling system for magnetron sputtering apparatus |
AU2002219966A1 (en) | 2000-11-30 | 2002-06-11 | North Carolina State University | Methods and apparatus for producing m'n based materials |
US9771648B2 (en) * | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
US20070056843A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones |
US7351596B2 (en) | 2005-10-07 | 2008-04-01 | Seminconductor Manufacturing International (Shanghai) Corporation | Method and system for operating a physical vapor deposition process |
JP2009024230A (ja) | 2007-07-20 | 2009-02-05 | Kobe Steel Ltd | スパッタリング装置 |
US8083911B2 (en) | 2008-02-14 | 2011-12-27 | Applied Materials, Inc. | Apparatus for treating a substrate |
JP5458177B2 (ja) | 2010-12-28 | 2014-04-02 | キヤノンアネルバ株式会社 | 半導体装置の製造方法および装置 |
-
2015
- 2015-02-09 US US14/616,895 patent/US9928997B2/en not_active Expired - Fee Related
- 2015-10-15 JP JP2017550458A patent/JP2018502224A/ja active Pending
- 2015-10-15 WO PCT/US2015/055648 patent/WO2016099635A2/en active Application Filing
- 2015-10-15 KR KR1020177019547A patent/KR20170094442A/ko not_active Application Discontinuation
- 2015-10-15 CN CN201580066460.7A patent/CN107004580B/zh not_active Expired - Fee Related
- 2015-10-15 CN CN201811141371.6A patent/CN109554672B/zh not_active Expired - Fee Related
- 2015-12-11 TW TW104141783A patent/TWI682048B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6199674A (ja) * | 1984-10-22 | 1986-05-17 | Hitachi Ltd | スパツタ電極 |
JP2002004040A (ja) * | 2000-06-16 | 2002-01-09 | Anelva Corp | 高周波スパッタリング装置 |
JP2003077975A (ja) * | 2001-08-31 | 2003-03-14 | Anelva Corp | マルチチャンバースパッタ処理装置 |
JP2007302921A (ja) * | 2006-05-09 | 2007-11-22 | Cyg Gijutsu Kenkyusho Kk | マグネトロンカソードとそれを搭載したスパッタ装置 |
US20130136873A1 (en) * | 2011-11-30 | 2013-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method with deposition chamber having multiple targets and magnets |
Also Published As
Publication number | Publication date |
---|---|
TW201627517A (zh) | 2016-08-01 |
CN107004580B (zh) | 2020-11-20 |
CN107004580A (zh) | 2017-08-01 |
TWI682048B (zh) | 2020-01-11 |
WO2016099635A2 (en) | 2016-06-23 |
CN109554672B (zh) | 2021-02-26 |
US9928997B2 (en) | 2018-03-27 |
WO2016099635A3 (en) | 2017-05-04 |
US20160172168A1 (en) | 2016-06-16 |
KR20170094442A (ko) | 2017-08-17 |
CN109554672A (zh) | 2019-04-02 |
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