KR20180095608A - 복합 GaN 나노컬럼의 제조 방법 및 그 방법으로부터 제조된 발광 구조 - Google Patents

복합 GaN 나노컬럼의 제조 방법 및 그 방법으로부터 제조된 발광 구조 Download PDF

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KR20180095608A
KR20180095608A KR1020187020188A KR20187020188A KR20180095608A KR 20180095608 A KR20180095608 A KR 20180095608A KR 1020187020188 A KR1020187020188 A KR 1020187020188A KR 20187020188 A KR20187020188 A KR 20187020188A KR 20180095608 A KR20180095608 A KR 20180095608A
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composite
gan
nanocolumns
nanocrystal
nanocolumn
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안나 볼코바
블라디미르 이반쯔소브
알렉산더 시르킨
벤자민 하스켈
허쎄인 엘-고루리
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오스텐도 테크놀로지스 인코포레이티드
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    • H10F71/1274—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP comprising nitrides, e.g. InGaN or InGaAlN
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KR1020187020188A 2015-12-14 2016-12-14 복합 GaN 나노컬럼의 제조 방법 및 그 방법으로부터 제조된 발광 구조 Ceased KR20180095608A (ko)

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Application Number Priority Date Filing Date Title
US201562267117P 2015-12-14 2015-12-14
US62/267,117 2015-12-14
US15/377,775 2016-12-13
US15/377,775 US11322652B2 (en) 2015-12-14 2016-12-13 Methods for producing composite GaN nanocolumns and light emitting structures made from the methods
PCT/US2016/066729 WO2017106387A1 (en) 2015-12-14 2016-12-14 METHODS FOR PRODUCING COMPOSITE GaN NANOCOLUMNS AND LIGHT EMITTING STRUCTURES MADE FROM THE METHODS

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US (1) US11322652B2 (enExample)
JP (1) JP6947746B2 (enExample)
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CN (1) CN108604538A (enExample)
TW (1) TWI740865B (enExample)
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US11322652B2 (en) * 2015-12-14 2022-05-03 Ostendo Technologies, Inc. Methods for producing composite GaN nanocolumns and light emitting structures made from the methods

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