TWI740865B - 製造複合GaN奈米柱之方法及由此方法製得之發光結構 - Google Patents

製造複合GaN奈米柱之方法及由此方法製得之發光結構 Download PDF

Info

Publication number
TWI740865B
TWI740865B TW105141477A TW105141477A TWI740865B TW I740865 B TWI740865 B TW I740865B TW 105141477 A TW105141477 A TW 105141477A TW 105141477 A TW105141477 A TW 105141477A TW I740865 B TWI740865 B TW I740865B
Authority
TW
Taiwan
Prior art keywords
composite
nanopillar
gan
nanopillars
plane
Prior art date
Application number
TW105141477A
Other languages
English (en)
Chinese (zh)
Other versions
TW201737317A (zh
Inventor
安納 沃克法
維拉迪姆 伊凡索夫
亞歷山大 瑟金
班傑明 A 哈斯寇
哈森 S 艾爾－葛洛力
Original Assignee
美商傲思丹度科技公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商傲思丹度科技公司 filed Critical 美商傲思丹度科技公司
Publication of TW201737317A publication Critical patent/TW201737317A/zh
Application granted granted Critical
Publication of TWI740865B publication Critical patent/TWI740865B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H10F71/1274—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP comprising nitrides, e.g. InGaN or InGaAlN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437—Quantum wires or nanorods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Geometry (AREA)
  • Nanotechnology (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
TW105141477A 2015-12-14 2016-12-14 製造複合GaN奈米柱之方法及由此方法製得之發光結構 TWI740865B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562267117P 2015-12-14 2015-12-14
US62/267,117 2015-12-14
US15/377,775 2016-12-13
US15/377,775 US11322652B2 (en) 2015-12-14 2016-12-13 Methods for producing composite GaN nanocolumns and light emitting structures made from the methods

Publications (2)

Publication Number Publication Date
TW201737317A TW201737317A (zh) 2017-10-16
TWI740865B true TWI740865B (zh) 2021-10-01

Family

ID=59020145

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105141477A TWI740865B (zh) 2015-12-14 2016-12-14 製造複合GaN奈米柱之方法及由此方法製得之發光結構

Country Status (6)

Country Link
US (1) US11322652B2 (enExample)
JP (1) JP6947746B2 (enExample)
KR (1) KR20180095608A (enExample)
CN (1) CN108604538A (enExample)
TW (1) TWI740865B (enExample)
WO (1) WO2017106387A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11322652B2 (en) * 2015-12-14 2022-05-03 Ostendo Technologies, Inc. Methods for producing composite GaN nanocolumns and light emitting structures made from the methods
CN109148654B (zh) * 2018-08-30 2020-04-07 芜湖德豪润达光电科技有限公司 非极性面ⅲ族氮化物外延结构及其制备方法
US10854646B2 (en) * 2018-10-19 2020-12-01 Attollo Engineering, LLC PIN photodetector
DE112019006510T5 (de) * 2019-03-12 2021-09-23 Ulvac, Inc. Vakuumabscheidungsvorrichtung
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
CN110993755B (zh) * 2019-12-18 2021-09-21 天津工业大学 电注入三维GaN核壳结构Nano-LED及制造方法
WO2024084634A1 (ja) * 2022-10-19 2024-04-25 京セラ株式会社 半導体基板、半導体基板の製造方法および製造装置
CN116705889B (zh) * 2023-06-28 2024-02-27 北京科技大学 梯度应变调控的范德华异质结型光电探测器及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200924029A (en) * 2007-09-26 2009-06-01 Wang-Nang Wang Non-polar III-V nitride semiconductor and growth method
TW201312096A (zh) * 2011-07-27 2013-03-16 Hewlett Packard Development Co 在表面凹痕中運用奈米桿之表面增強拉曼光譜學技術
US8658519B1 (en) * 2008-12-19 2014-02-25 Stc.Unm Nanowires, nanowire networks and methods for their formation and use
TW201530807A (zh) * 2013-12-17 2015-08-01 Glo Ab 具有應變改質表面活性區域之第三族氮化物奈米線ｌｅｄ及其製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003089695A1 (en) * 2002-04-15 2003-10-30 The Regents Of The University Of California Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition
KR20060127743A (ko) * 2005-06-06 2006-12-13 스미토모덴키고교가부시키가이샤 질화물 반도체 기판과 그 제조 방법
JP2007048869A (ja) * 2005-08-09 2007-02-22 Sony Corp ＧａＮ系半導体発光素子の製造方法
CN101443887B (zh) * 2006-03-10 2011-04-20 Stc.Unm公司 Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件
AU2007313096B2 (en) 2006-03-10 2011-11-10 Unm Rainforest Innovations Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices
JP5082752B2 (ja) * 2006-12-21 2012-11-28 日亜化学工業株式会社 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子
US8964020B2 (en) * 2007-04-25 2015-02-24 Stc.Unm Solid-state microscope for selectively imaging a sample
US7745315B1 (en) 2007-10-03 2010-06-29 Sandia Corporation Highly aligned vertical GaN nanowires using submonolayer metal catalysts
US8188513B2 (en) * 2007-10-04 2012-05-29 Stc.Unm Nanowire and larger GaN based HEMTS
CN101685774B (zh) * 2008-09-24 2012-06-13 北京邮电大学 一种基于界面纳米结构的异质外延生长工艺
KR20100093872A (ko) * 2009-02-17 2010-08-26 삼성엘이디 주식회사 질화물 반도체 발광소자 및 그 제조방법
CN103098216A (zh) * 2010-06-24 2013-05-08 Glo公司 具有用于定向纳米线生长的缓冲层的衬底
US8409892B2 (en) * 2011-04-14 2013-04-02 Opto Tech Corporation Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates
CN103531447B (zh) * 2012-07-06 2016-03-16 中国科学院金属研究所 一种降低氮化镓纳米线阵列晶体缺陷密度的方法
WO2014066379A1 (en) * 2012-10-26 2014-05-01 Glo Ab Nanowire sized opto-electronic structure and method for modifying selected portions of same
US11502219B2 (en) 2013-03-14 2022-11-15 The Royal Institution For The Advancement Of Learning/Mcgill University Methods and devices for solid state nanowire devices
KR102070209B1 (ko) * 2013-07-01 2020-01-28 엘지전자 주식회사 성장기판 및 그를 포함하는 발광소자
US9171843B2 (en) 2013-08-02 2015-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and fabricating the same
US9053890B2 (en) * 2013-08-02 2015-06-09 University Health Network Nanostructure field emission cathode structure and method for making
KR102140741B1 (ko) * 2014-02-18 2020-08-03 엘지전자 주식회사 무분극 이종 기판 및 그 제조방법, 이를 이용한 질화물 반도체 발광 소자
FR3019188B1 (fr) * 2014-03-27 2017-11-24 Commissariat Energie Atomique Procede de croissance d'un element allonge a partir d'un germe forme dans un creux d'une couche ou d'un plot de nucleation
US9773889B2 (en) * 2014-07-18 2017-09-26 Taiwan Semiconductor Manufacturing Company Limited Method of semiconductor arrangement formation
US11322652B2 (en) * 2015-12-14 2022-05-03 Ostendo Technologies, Inc. Methods for producing composite GaN nanocolumns and light emitting structures made from the methods

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200924029A (en) * 2007-09-26 2009-06-01 Wang-Nang Wang Non-polar III-V nitride semiconductor and growth method
US8658519B1 (en) * 2008-12-19 2014-02-25 Stc.Unm Nanowires, nanowire networks and methods for their formation and use
TW201312096A (zh) * 2011-07-27 2013-03-16 Hewlett Packard Development Co 在表面凹痕中運用奈米桿之表面增強拉曼光譜學技術
TW201530807A (zh) * 2013-12-17 2015-08-01 Glo Ab 具有應變改質表面活性區域之第三族氮化物奈米線ｌｅｄ及其製造方法

Also Published As

Publication number Publication date
JP6947746B2 (ja) 2021-10-13
TW201737317A (zh) 2017-10-16
US11322652B2 (en) 2022-05-03
KR20180095608A (ko) 2018-08-27
JP2019502273A (ja) 2019-01-24
WO2017106387A1 (en) 2017-06-22
CN108604538A (zh) 2018-09-28
US20170170363A1 (en) 2017-06-15

Similar Documents

Publication Publication Date Title
TWI740865B (zh) 製造複合GaN奈米柱之方法及由此方法製得之發光結構
CN101681813B (zh) 氮化物纳米线及其制造方法
Li et al. GaN based nanorods for solid state lighting
CN103477418B (zh) 石墨基板上的纳米线外延
TWI500827B (zh) 使用奈米結構緩衝層和氫化物氣相沉積（ｈｖｐｅ）來製造高品質化合物半導體材料的成長方法
TWI395260B (zh) 半導體元件之製造
CN103348044A (zh) 基底基板、氮化镓晶体层叠基板及其制造方法
KR20110088483A (ko) ＧａＮ 단결정 기판의 제조 방법 및 ＧａＮ 단결정 기판
CN102420277B (zh) 一种制备高密度氮化镓量子点有源层结构的方法
KR20100085635A (ko) 구형 볼을 이용한 화합물 반도체 기판의 제조 방법과 이를 이용한 화합물 반도체 기판 및 화합물 반도체 소자
JPH11261169A (ja) 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法および半導体装置
Alloing et al. Metalorganic chemical vapor deposition of GaN nanowires: From catalyst-assisted to catalyst-free growth, and from self-assembled to selective-area growth
KR102724391B1 (ko) 비극성 iii-질화물 이원 및 삼원 재료, 그 획득 방법 및 사용 방법
Li et al. Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD
Tang et al. Nitride nanocolumns for the development of light-emitting diode
JP6693618B2 (ja) エピタキシャル基板の製造方法
CN103872200B (zh) 形成半导体层的方法、半导体发光器件及其制造方法
TW202147640A (zh) 光電子器件及其製造方法
HK1261540A1 (en) Methods for producing composite gan nanocolumns and light emitting structures made from the methods
Whitehouse et al. Woodhead Publishing Series in Electronic and Optical Materials
RU135186U1 (ru) Полупроводниковое светоизлучающее устройство
Navamathavan et al. Advances in InGaN/GaN Nanowires for Alternate Energy Applications: A Mini Review
이동현 Epitaxial Growth of III-Nitride on Nano-Patterned Substrate for Light-Emitting Diode
Eymery Metal‐Organic Vapor Phase Epitaxy Growth of GaN Nanorods
Dogan et al. III–V semiconductor nanowires: Nitrides (N-based; III-N)

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees