KR20180085012A - 플래시 메모리 시스템에 대한 저전력 감지 증폭기 - Google Patents

플래시 메모리 시스템에 대한 저전력 감지 증폭기 Download PDF

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Publication number
KR20180085012A
KR20180085012A KR1020187018054A KR20187018054A KR20180085012A KR 20180085012 A KR20180085012 A KR 20180085012A KR 1020187018054 A KR1020187018054 A KR 1020187018054A KR 20187018054 A KR20187018054 A KR 20187018054A KR 20180085012 A KR20180085012 A KR 20180085012A
Authority
KR
South Korea
Prior art keywords
low
flash memory
sense amplifier
memory systems
power sense
Prior art date
Application number
KR1020187018054A
Other languages
English (en)
Other versions
KR102133106B1 (ko
Inventor
샤오조우 치안
샤오 얀 피
카이 만 유에
칭 라오
리사 비엔
Original Assignee
실리콘 스토리지 테크놀로지 인크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 실리콘 스토리지 테크놀로지 인크 filed Critical 실리콘 스토리지 테크놀로지 인크
Priority claimed from PCT/US2016/065936 external-priority patent/WO2017116658A1/en
Publication of KR20180085012A publication Critical patent/KR20180085012A/ko
Application granted granted Critical
Publication of KR102133106B1 publication Critical patent/KR102133106B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/022—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in I/O circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/1204—Bit line control
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2254—Calibration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
KR1020187018054A 2015-12-31 2016-12-09 플래시 메모리 시스템에 대한 저전력 감지 증폭기 KR102133106B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
CN201511030454.4A CN106935267B (zh) 2015-12-31 2015-12-31 用于闪速存储器系统的低功率感测放大器
CN201511030454.4 2015-12-31
US15/371,496 2016-12-07
US15/371,496 US10199109B2 (en) 2015-12-31 2016-12-07 Low power sense amplifier for a flash memory system
PCT/US2016/065936 WO2017116658A1 (en) 2015-12-31 2016-12-09 Low power sense amplifier for a flash memory system

Publications (2)

Publication Number Publication Date
KR20180085012A true KR20180085012A (ko) 2018-07-25
KR102133106B1 KR102133106B1 (ko) 2020-07-10

Family

ID=59226774

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187018054A KR102133106B1 (ko) 2015-12-31 2016-12-09 플래시 메모리 시스템에 대한 저전력 감지 증폭기

Country Status (6)

Country Link
US (1) US10199109B2 (ko)
EP (2) EP3982365B1 (ko)
JP (1) JP6686148B2 (ko)
KR (1) KR102133106B1 (ko)
CN (1) CN106935267B (ko)
TW (2) TWI633555B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10319420B2 (en) 2017-04-10 2019-06-11 Sandisk Technologies Llc Sense amplifier with non-ideality cancellation
CN110610738B (zh) * 2018-06-15 2023-08-18 硅存储技术公司 用于闪存存储器系统的改进的感测放大器
US10854259B2 (en) 2018-06-29 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Asynchronous read circuit using delay sensing in magnetoresistive random access memory (MRAM)
US11475926B1 (en) 2021-06-10 2022-10-18 Globalfoundries U.S. Inc. Sense amplifier circuit for current sensing
US11940831B2 (en) * 2021-12-07 2024-03-26 Infineon Technologies LLC Current generator for memory sensing

Citations (5)

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JP2001344985A (ja) * 2000-06-05 2001-12-14 Nec Corp 半導体記憶装置
JP2010198711A (ja) * 2009-02-27 2010-09-09 Renesas Electronics Corp 半導体記憶装置及びその検査方法
US20120155177A1 (en) * 2010-12-15 2012-06-21 Wang Lee Z Structures and methods for reading out non-volatile memory using referencing cells
US20140043886A1 (en) * 2012-08-09 2014-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Sensing memory element logic states from bit line discharge rate that varies with resistance
KR20150127184A (ko) * 2013-03-15 2015-11-16 실리콘 스토리지 테크놀로지 인크 고속 및 저전력 감지 증폭기

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JPH02226589A (ja) * 1989-02-27 1990-09-10 Nec Corp 半導体記憶装置
KR0144017B1 (ko) * 1995-06-28 1998-08-17 김주용 센스 증폭기
TW367503B (en) * 1996-11-29 1999-08-21 Sanyo Electric Co Non-volatile semiconductor device
JP3789629B2 (ja) * 1998-01-27 2006-06-28 富士通株式会社 半導体装置
JPH11306782A (ja) * 1998-04-24 1999-11-05 Sharp Corp 半導体記憶装置
KR100303056B1 (ko) * 1998-11-07 2001-11-22 윤종용 온-칩테스트회로를구비한강유전체메모리장치
US6272062B1 (en) 2000-05-31 2001-08-07 Infineon Technologies Ag Semiconductor memory with programmable bitline multiplexers
US6836443B2 (en) * 2003-01-14 2004-12-28 Tower Semiconductor Ltd. Apparatus and method of high speed current sensing for low voltage operation
US20050117429A1 (en) * 2003-04-28 2005-06-02 Chin-Hsi Lin Nonvolatile memory structure with high speed high bandwidth and low voltage
US7088630B2 (en) * 2004-04-23 2006-08-08 Macronix International Co., Ltd. Circuit and method for high speed sensing
US7280405B2 (en) 2004-12-14 2007-10-09 Tower Semiconductor Ltd. Integrator-based current sensing circuit for reading memory cells
US8773934B2 (en) * 2006-09-27 2014-07-08 Silicon Storage Technology, Inc. Power line compensation for flash memory sense amplifiers
US8908431B2 (en) * 2010-02-17 2014-12-09 Samsung Electronics Co., Ltd. Control method of nonvolatile memory device
JP2012094216A (ja) 2010-10-27 2012-05-17 Toshiba Corp 読出回路、および、半導体記憶装置
US9053791B2 (en) * 2012-03-07 2015-06-09 Medtronic, Inc. Flash memory with integrated ROM memory cells
CN103366790A (zh) * 2012-03-30 2013-10-23 硅存储技术公司 用于读出放大器的可调整参考发生器
JP5891918B2 (ja) 2012-04-11 2016-03-23 株式会社ソシオネクスト 不揮発性メモリ、電子装置及び検証方法
US20140269061A1 (en) * 2013-03-15 2014-09-18 Silicon Storage Technology, Inc. High Speed Sensing For Advanced Nanometer Flash Memory Device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001344985A (ja) * 2000-06-05 2001-12-14 Nec Corp 半導体記憶装置
JP2010198711A (ja) * 2009-02-27 2010-09-09 Renesas Electronics Corp 半導体記憶装置及びその検査方法
US20120155177A1 (en) * 2010-12-15 2012-06-21 Wang Lee Z Structures and methods for reading out non-volatile memory using referencing cells
US20140043886A1 (en) * 2012-08-09 2014-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Sensing memory element logic states from bit line discharge rate that varies with resistance
KR20150127184A (ko) * 2013-03-15 2015-11-16 실리콘 스토리지 테크놀로지 인크 고속 및 저전력 감지 증폭기

Also Published As

Publication number Publication date
CN106935267A (zh) 2017-07-07
TWI633555B (zh) 2018-08-21
US10199109B2 (en) 2019-02-05
TWI670718B (zh) 2019-09-01
KR102133106B1 (ko) 2020-07-10
EP3384497A1 (en) 2018-10-10
JP2019500713A (ja) 2019-01-10
TW201837920A (zh) 2018-10-16
EP3982365B1 (en) 2023-06-14
EP3982365A1 (en) 2022-04-13
CN106935267B (zh) 2020-11-10
TW201732826A (zh) 2017-09-16
EP3384497B1 (en) 2022-01-26
JP6686148B2 (ja) 2020-04-22
US20170194055A1 (en) 2017-07-06
EP3384497A4 (en) 2019-10-16

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