DK3453111T3 - Forstærker - Google Patents

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Publication number
DK3453111T3
DK3453111T3 DK16719433.1T DK16719433T DK3453111T3 DK 3453111 T3 DK3453111 T3 DK 3453111T3 DK 16719433 T DK16719433 T DK 16719433T DK 3453111 T3 DK3453111 T3 DK 3453111T3
Authority
DK
Denmark
Prior art keywords
amplifier
Prior art date
Application number
DK16719433.1T
Other languages
English (en)
Inventor
Fenghao Mu
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Application granted granted Critical
Publication of DK3453111T3 publication Critical patent/DK3453111T3/da

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H03F1/342—Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0067—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with one or more circuit blocks in common for different bands
    • H04B1/0082—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with one or more circuit blocks in common for different bands with a common local oscillator for more than one band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/1638—Special circuits to enhance selectivity of receivers not otherwise provided for
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/18—Input circuits, e.g. for coupling to an antenna or a transmission line
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/144—Indexing scheme relating to amplifiers the feedback circuit of the amplifier stage comprising a passive resistor and passive capacitor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/21—Bias resistors are added at the input of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/546—A tunable capacitance being present in an amplifier circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45024—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are cascode coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45236—Two dif amps realised in MOS or JFET technology, one of them being of the p-channel type and the other one of the n-channel type, are coupled in parallel with their gates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45241—Two dif amps realised in MOS or JFET technology, the dif amps being either both of the p-channel type or both of the n-channel type, are coupled in parallel with their gates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45512—Indexing scheme relating to differential amplifiers the FBC comprising one or more capacitors, not being switched capacitors, and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45524—Indexing scheme relating to differential amplifiers the FBC comprising one or more active resistors and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45526—Indexing scheme relating to differential amplifiers the FBC comprising a resistor-capacitor combination and being coupled between the LC and the IC

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Ink Jet (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
DK16719433.1T 2016-05-02 2016-05-02 Forstærker DK3453111T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2016/059791 WO2017190764A1 (en) 2016-05-02 2016-05-02 Amplifier

Publications (1)

Publication Number Publication Date
DK3453111T3 true DK3453111T3 (da) 2020-05-18

Family

ID=55860875

Family Applications (2)

Application Number Title Priority Date Filing Date
DK20159736.6T DK3678293T3 (da) 2016-05-02 2016-05-02 Forstærker
DK16719433.1T DK3453111T3 (da) 2016-05-02 2016-05-02 Forstærker

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DK20159736.6T DK3678293T3 (da) 2016-05-02 2016-05-02 Forstærker

Country Status (18)

Country Link
US (3) US10320341B2 (da)
EP (2) EP3678293B1 (da)
JP (1) JP7002468B2 (da)
KR (1) KR102136020B1 (da)
CN (2) CN115208333A (da)
AR (1) AR108261A1 (da)
AU (1) AU2016405599B2 (da)
BR (1) BR112018071277B1 (da)
CA (1) CA3022783C (da)
DK (2) DK3678293T3 (da)
ES (2) ES2794774T3 (da)
MX (1) MX2018012644A (da)
MY (1) MY188631A (da)
PL (1) PL3678293T3 (da)
RU (1) RU2726828C1 (da)
SG (1) SG11201811284YA (da)
WO (1) WO2017190764A1 (da)
ZA (1) ZA201806723B (da)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019221175A1 (ja) * 2018-05-17 2019-11-21 株式会社村田製作所 増幅回路
US10707817B2 (en) * 2018-05-30 2020-07-07 Speedlink Technology Inc. Wideband low noise amplifier (LNA) with a reconfigurable bandwidth for millimeter-wave 5G communication
US11245372B2 (en) 2019-08-30 2022-02-08 Skyworks Solutions, Inc. Variable-gain amplifier with degeneration circuit
US11942912B2 (en) * 2019-09-18 2024-03-26 Skyworks Solutions, Inc. Amplifier with tunable impedance circuit
RU2759317C1 (ru) * 2021-02-08 2021-11-11 Федеральное государственное бюджетное образовательное учреждение высшего образования "Санкт-Петербургский государственный институт кино и телевидения" (СПбГИКиТ) Универсальный электрический эквивалент громкоговорителя

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CA1187949A (en) * 1982-06-18 1985-05-28 Stephen G. Harman Negative feedback amplifiers including directional couplers
JPS6035811A (ja) * 1983-08-08 1985-02-23 Matsushita Electric Ind Co Ltd 半導体式放射線測定装置用前置増幅器
JPS6327104A (ja) * 1986-07-21 1988-02-04 Sharp Corp 並列帰還型増幅器
US6809581B2 (en) * 2002-04-23 2004-10-26 Broadcom Corp. Integrated circuit low noise amplifier and applications thereof
JP2005124175A (ja) * 2003-09-24 2005-05-12 Matsushita Electric Ind Co Ltd 増幅装置および周波数変換装置
JP2005175819A (ja) * 2003-12-10 2005-06-30 Sony Corp 増幅器並びに通信装置
EP1792395A1 (en) 2004-09-10 2007-06-06 Koninklijke Philips Electronics N.V. Tunable cascode lna with flat gain response over a wide frequency range
DE102005007876B4 (de) 2005-02-21 2013-07-04 Infineon Technologies Ag Verstärkerschaltung mit reduzierter Temperaturabhängingkeit der Verstärkung
CN101253682A (zh) * 2005-08-30 2008-08-27 松下电器产业株式会社 低噪声放大电路和接收系统
US7949322B2 (en) 2007-03-09 2011-05-24 Qualcomm, Incorporated Frequency selective amplifier with wide-band impedance and noise matching
JP2009021938A (ja) * 2007-07-13 2009-01-29 Alps Electric Co Ltd 負帰還増幅回路
KR20090022260A (ko) * 2007-08-30 2009-03-04 삼성전자주식회사 가변 캐패시터를 이용한 광대역 저잡음 증폭기
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US20170373647A1 (en) * 2015-02-19 2017-12-28 Northeastern University Linearity Enhancement Method For Low-Power Low-Noise Amplifiers Biased In The Subthreshold Region

Also Published As

Publication number Publication date
BR112018071277A2 (pt) 2019-02-12
ES2895672T3 (es) 2022-02-22
CA3022783C (en) 2020-12-08
CN109075747A (zh) 2018-12-21
EP3678293B1 (en) 2021-08-18
PL3678293T3 (pl) 2022-01-24
US10673393B2 (en) 2020-06-02
US20180191312A1 (en) 2018-07-05
ZA201806723B (en) 2020-01-29
AU2016405599B2 (en) 2019-06-20
US10320341B2 (en) 2019-06-11
EP3678293A1 (en) 2020-07-08
KR102136020B1 (ko) 2020-07-21
EP3453111A1 (en) 2019-03-13
AU2016405599A1 (en) 2018-11-22
KR20180132927A (ko) 2018-12-12
WO2017190764A1 (en) 2017-11-09
JP7002468B2 (ja) 2022-01-20
EP3453111B1 (en) 2020-03-04
ES2794774T3 (es) 2020-11-19
BR112018071277B1 (pt) 2021-01-26
MY188631A (en) 2021-12-22
AR108261A1 (es) 2018-08-01
RU2726828C1 (ru) 2020-07-15
CA3022783A1 (en) 2017-11-09
US11290064B2 (en) 2022-03-29
CN115208333A (zh) 2022-10-18
MX2018012644A (es) 2019-01-30
US20200259466A1 (en) 2020-08-13
SG11201811284YA (en) 2019-01-30
CN109075747B (zh) 2022-06-17
DK3678293T3 (da) 2021-10-11
JP2019516308A (ja) 2019-06-13
US20190280656A1 (en) 2019-09-12

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