KR20170134422A - 와이어 격자 편광자용 산화 및 수분 장벽 - Google Patents
와이어 격자 편광자용 산화 및 수분 장벽 Download PDFInfo
- Publication number
- KR20170134422A KR20170134422A KR1020177027671A KR20177027671A KR20170134422A KR 20170134422 A KR20170134422 A KR 20170134422A KR 1020177027671 A KR1020177027671 A KR 1020177027671A KR 20177027671 A KR20177027671 A KR 20177027671A KR 20170134422 A KR20170134422 A KR 20170134422A
- Authority
- KR
- South Korea
- Prior art keywords
- barrier
- coating
- conformal
- wgp
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 15
- 230000003647 oxidation Effects 0.000 title abstract description 14
- 238000007254 oxidation reaction Methods 0.000 title abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 127
- 239000011248 coating agent Substances 0.000 claims abstract description 123
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000007740 vapor deposition Methods 0.000 claims abstract description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 8
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 8
- 229910000449 hafnium oxide Inorganic materials 0.000 claims abstract description 7
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims abstract description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 51
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 27
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 14
- 125000003118 aryl group Chemical group 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 125000001165 hydrophobic group Chemical group 0.000 claims description 8
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 14
- 238000005260 corrosion Methods 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 66
- 230000002745 absorbent Effects 0.000 description 19
- 239000002250 absorbent Substances 0.000 description 19
- 230000010287 polarization Effects 0.000 description 17
- 125000004432 carbon atom Chemical group C* 0.000 description 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 14
- 229910000077 silane Inorganic materials 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 238000007689 inspection Methods 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 11
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 230000009286 beneficial effect Effects 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 239000011253 protective coating Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 239000000428 dust Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052717 sulfur Inorganic materials 0.000 description 5
- 239000011593 sulfur Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 150000001721 carbon Chemical group 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 229910052729 chemical element Inorganic materials 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001429 visible spectrum Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- PMVSDNDAUGGCCE-TYYBGVCCSA-L Ferrous fumarate Chemical compound [Fe+2].[O-]C(=O)\C=C\C([O-])=O PMVSDNDAUGGCCE-TYYBGVCCSA-L 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical group C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical group C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000004404 heteroalkyl group Chemical group 0.000 description 2
- 125000001072 heteroaryl group Chemical group 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 125000000547 substituted alkyl group Chemical group 0.000 description 2
- 125000003107 substituted aryl group Chemical group 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical group C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Chemical group 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910003849 O-Si Inorganic materials 0.000 description 1
- 229910003872 O—Si Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical group C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Chemical group 0.000 description 1
- 230000027455 binding Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004305 biphenyl Chemical group 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- KAVGMUDTWQVPDF-UHFFFAOYSA-N perflubutane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)F KAVGMUDTWQVPDF-UHFFFAOYSA-N 0.000 description 1
- 229950003332 perflubutane Drugs 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- PTMHPRAIXMAOOB-UHFFFAOYSA-L phosphoramidate Chemical compound NP([O-])([O-])=O PTMHPRAIXMAOOB-UHFFFAOYSA-L 0.000 description 1
- PTMHPRAIXMAOOB-UHFFFAOYSA-N phosphoramidic acid Chemical class NP(O)(O)=O PTMHPRAIXMAOOB-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003075 superhydrophobic effect Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/08—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/08—Anti-corrosive paints
- C09D5/082—Anti-corrosive paints characterised by the anti-corrosive pigment
- C09D5/084—Inorganic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2350/00—Pretreatment of the substrate
- B05D2350/60—Adding a layer before coating
- B05D2350/63—Adding a layer before coating ceramic layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Polarising Elements (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Laminated Bodies (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (15)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562142854P | 2015-04-03 | 2015-04-03 | |
| US62/142,854 | 2015-04-03 | ||
| US201562190188P | 2015-07-08 | 2015-07-08 | |
| US62/190,188 | 2015-07-08 | ||
| US201562209024P | 2015-08-24 | 2015-08-24 | |
| US62/209,024 | 2015-08-24 | ||
| US201562216782P | 2015-09-10 | 2015-09-10 | |
| US62/216,782 | 2015-09-10 | ||
| US201562242883P | 2015-10-16 | 2015-10-16 | |
| US62/242,883 | 2015-10-16 | ||
| US201562265773P | 2015-12-10 | 2015-12-10 | |
| US62/265,773 | 2015-12-10 | ||
| US15/078,495 US10054717B2 (en) | 2015-04-03 | 2016-03-23 | Oxidation and moisture barrier layers for wire grid polarizer |
| US15/078,495 | 2016-03-23 | ||
| PCT/US2016/024713 WO2016160803A1 (en) | 2015-04-03 | 2016-03-29 | Oxidation and moisture barrier layers for wire grid polarizer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20170134422A true KR20170134422A (ko) | 2017-12-06 |
Family
ID=57007562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177027671A Ceased KR20170134422A (ko) | 2015-04-03 | 2016-03-29 | 와이어 격자 편광자용 산화 및 수분 장벽 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10054717B2 (https=) |
| EP (1) | EP3237943B1 (https=) |
| JP (4) | JP7059497B2 (https=) |
| KR (1) | KR20170134422A (https=) |
| CN (2) | CN111766656A (https=) |
| WO (1) | WO2016160803A1 (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102422109B1 (ko) * | 2015-01-08 | 2022-07-19 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 이를 제조하는 방법 |
| US10534120B2 (en) | 2015-04-03 | 2020-01-14 | Moxtek, Inc. | Wire grid polarizer with protected wires |
| US9995864B2 (en) | 2015-04-03 | 2018-06-12 | Moxtek, Inc. | Wire grid polarizer with silane protective coating |
| US10444410B2 (en) | 2016-08-16 | 2019-10-15 | Moxtek, Inc. | Overcoat wire grid polarizer having conformal coat layer with oxidation barrier and moisture barrier |
| JP2019536074A (ja) * | 2016-11-22 | 2019-12-12 | モックステック・インコーポレーテッド | オーバーコートワイヤグリッド偏光子 |
| CN107102394B (zh) * | 2017-07-03 | 2020-05-22 | 京东方科技集团股份有限公司 | 一种线栅偏振器、其制作方法及显示面板 |
| JP2019061125A (ja) * | 2017-09-27 | 2019-04-18 | デクセリアルズ株式会社 | 偏光板及びその製造方法、並びに光学機器 |
| JP6678630B2 (ja) * | 2017-09-28 | 2020-04-08 | デクセリアルズ株式会社 | 偏光板及びこれを備える光学機器 |
| US10852464B2 (en) * | 2018-03-01 | 2020-12-01 | Moxtek, Inc. | High-contrast polarizer |
| JP7333168B2 (ja) * | 2018-11-19 | 2023-08-24 | デクセリアルズ株式会社 | 偏光素子、偏光素子の製造方法及び光学機器 |
| US11746418B2 (en) * | 2018-12-03 | 2023-09-05 | Moxtek, Inc. | Chemical vapor deposition of thick inorganic coating on a polarizer |
| PH12020050239A1 (en) * | 2019-08-27 | 2021-05-17 | Moxtek Inc | Optical device with embedded organic moieties |
| DE112022000926T5 (de) * | 2021-02-03 | 2023-11-16 | Gyrus Acmi, Inc. D/B/A Olympus Surgical Technologies America | Strukturierte elektrode für die dampftaschenentzündung |
| US20220291434A1 (en) * | 2021-03-12 | 2022-09-15 | Moxtek, Inc. | Wire Grid Polarizer Wire Sidewall Protection |
| US12554056B2 (en) | 2021-07-16 | 2026-02-17 | Moxtek, Inc. | Wire grid polarizer having wires with silicon core and silicon dioxide ribs |
| US20230236347A1 (en) * | 2022-01-26 | 2023-07-27 | Moxtek, Inc. | Reflective ultraviolet wire grid polarizer |
| TW202422131A (zh) * | 2022-11-22 | 2024-06-01 | 日商牛尾電機股份有限公司 | 反射型相位差構造體及其製造方法 |
Family Cites Families (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3630790A (en) | 1969-05-13 | 1971-12-28 | Dow Chemical Co | Method of protection of metal surfaces from corrosion |
| US5045347A (en) | 1986-11-07 | 1991-09-03 | Hoechst Aktiengesellschaft | Reclaimable polyester film having adhesion-promoting coating |
| US4705725A (en) | 1986-11-28 | 1987-11-10 | E. I. Du Pont De Nemours And Company | Substrates with sterically-protected, stable, covalently-bonded organo-silane films |
| US4759611A (en) | 1986-12-19 | 1988-07-26 | Polaroid Corporation, Patent Department | Liquid crystal display having silylated light polarizers |
| DE4313130C1 (de) | 1993-04-22 | 1994-05-26 | Goldschmidt Ag Th | Verfahren zur Herstellung von Silanen bzw. Organosiliciumhydriden durch Reduktion der entsprechenden Siliciumhalogenide bzw. Organosiliciumhalogenide |
| DE19539789A1 (de) * | 1995-10-26 | 1997-04-30 | Merck Patent Gmbh | Mittel und Verfahren zur Herstellung von wasserabweisenden Beschichtungen auf optischen Substraten |
| JP3520775B2 (ja) | 1998-09-08 | 2004-04-19 | ソニーケミカル株式会社 | 低接着性塗料 |
| US6447120B2 (en) | 1999-07-28 | 2002-09-10 | Moxtex | Image projection system with a polarizing beam splitter |
| US6585378B2 (en) | 2001-03-20 | 2003-07-01 | Eastman Kodak Company | Digital cinema projector |
| WO2003067682A2 (en) | 2002-02-05 | 2003-08-14 | Gencell Corporation | Silane coated metallic fuel cell components and methods of manufacture |
| TWI266899B (en) | 2002-02-12 | 2006-11-21 | Unaxis Balzers Ltd | Component comprising submicron hollow spaces |
| US6785050B2 (en) * | 2002-05-09 | 2004-08-31 | Moxtek, Inc. | Corrosion resistant wire-grid polarizer and method of fabrication |
| US7404878B2 (en) | 2003-03-31 | 2008-07-29 | Chlorine Engineers Corp., Ltd. | Gas diffusion electrode assembly, bonding method for gas diffusion electrodes, and electrolyzer comprising gas diffusion electrodes |
| US7189479B2 (en) * | 2003-08-21 | 2007-03-13 | 3M Innovative Properties Company | Phototool coating |
| US7961393B2 (en) | 2004-12-06 | 2011-06-14 | Moxtek, Inc. | Selectively absorptive wire-grid polarizer |
| WO2006127664A1 (en) | 2005-05-23 | 2006-11-30 | Innovation Chemical Technologies, Ltd. | Fluorinated organic silicon coating material |
| KR100720454B1 (ko) | 2005-06-14 | 2007-05-22 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
| US7345855B2 (en) | 2005-09-07 | 2008-03-18 | International Business Machines Corporation | Tunnel barriers based on rare earth element oxides |
| KR101135381B1 (ko) | 2005-12-20 | 2012-04-17 | 엘지디스플레이 주식회사 | 평판 디스플레이 패널의 리페어 방법 |
| WO2007077871A1 (ja) | 2006-01-06 | 2007-07-12 | Konica Minolta Holdings, Inc. | 防湿性セルロースエステルフィルム、偏光板保護フィルム及び偏光板 |
| US20070242352A1 (en) | 2006-04-13 | 2007-10-18 | Macmaster Steven William | Wire-grid polarizers, methods of fabrication thereof and their use in transmissive displays |
| US7854864B2 (en) | 2006-04-28 | 2010-12-21 | Konica Minolta Opto, Inc. | Method for manufacturing an optical film having a convexoconcave structure |
| US20080015298A1 (en) | 2006-07-17 | 2008-01-17 | Mingna Xiong | Superhydrophobic coating composition and coated articles obtained therefrom |
| US20080131709A1 (en) | 2006-09-28 | 2008-06-05 | Aculon Inc. | Composite structure with organophosphonate adherent layer and method of preparing |
| CN101589473B (zh) | 2006-10-12 | 2011-10-05 | 凯博瑞奥斯技术公司 | 基于纳米线的透明导体及其应用 |
| KR20090090310A (ko) | 2006-11-17 | 2009-08-25 | 다이니폰 인사츠 가부시키가이샤 | 광학 필름, 편광판 및 화상 표시 장치 |
| KR101281164B1 (ko) | 2006-11-21 | 2013-07-02 | 삼성디스플레이 주식회사 | 와이어 그리드 편광자 및 이의 제조방법 |
| US20080245273A1 (en) | 2007-04-05 | 2008-10-09 | Jouko Vyorkka | Hydrophobic coatings |
| CN101334497B (zh) * | 2007-06-28 | 2015-11-25 | 第一毛织株式会社 | 偏振分光器件及其制造方法和设备以及包括其的显示器 |
| CN101399205A (zh) * | 2007-09-28 | 2009-04-01 | 力晶半导体股份有限公司 | 制作快闪存储器的方法 |
| JP5219715B2 (ja) | 2007-09-28 | 2013-06-26 | 富士フイルム株式会社 | 磁性粉末用表面改質剤、それを含む磁性塗料、ならびに磁気記録媒体 |
| JP5315681B2 (ja) | 2007-12-12 | 2013-10-16 | Ｔｄｋ株式会社 | ハードコート用組成物、ハードコート層を有する物体およびその製造方法 |
| US20090231702A1 (en) * | 2008-03-17 | 2009-09-17 | Qihong Wu | Optical films and methods of making the same |
| WO2009125751A1 (ja) | 2008-04-08 | 2009-10-15 | 旭硝子株式会社 | ワイヤグリッド型偏光子の製造方法 |
| JPWO2009148138A1 (ja) * | 2008-06-05 | 2011-11-04 | 旭硝子株式会社 | ナノインプリント用モールド、その製造方法および表面に微細凹凸構造を有する樹脂成形体ならびにワイヤグリッド型偏光子の製造方法 |
| JP5459210B2 (ja) * | 2008-07-10 | 2014-04-02 | 旭硝子株式会社 | ワイヤグリッド型偏光子およびその製造方法 |
| KR101383930B1 (ko) | 2008-12-24 | 2014-04-10 | 엘지디스플레이 주식회사 | 광 조사 장치 |
| US20110189382A1 (en) | 2009-07-23 | 2011-08-04 | E. I. Du Pont De Nemours And Company | Method of preparing fluorinated hybrid compositions |
| US20110186790A1 (en) | 2009-07-23 | 2011-08-04 | E. I. Du Pont De Nemours And Company | Fluorinated hybrid compositions |
| US20110200826A1 (en) | 2009-07-23 | 2011-08-18 | E. I. Du Pont De Nemours And Company | Articles containing fluorinated hybrid compositions |
| JP5735522B2 (ja) | 2009-10-27 | 2015-06-17 | シルコテック コーポレイション | 化学気相成長コーティング、物品、及び方法 |
| CN101819125B (zh) * | 2010-03-24 | 2012-05-23 | 江苏大学 | 一种光栅结构的稳定超疏水表面设计方法 |
| JP2011248284A (ja) | 2010-05-31 | 2011-12-08 | Sony Chemical & Information Device Corp | 偏光板及び偏光板の製造方法 |
| JP2012002972A (ja) * | 2010-06-16 | 2012-01-05 | Seiko Epson Corp | 偏光素子及びその製造方法、液晶装置、電子機器 |
| JP2012058397A (ja) * | 2010-09-07 | 2012-03-22 | Asahi Glass Co Ltd | ワイヤグリッド型偏光子、その製造方法および液晶表示装置 |
| JP5682437B2 (ja) * | 2010-09-07 | 2015-03-11 | ソニー株式会社 | 固体撮像素子、固体撮像装置、撮像機器、及び、偏光素子の製造方法 |
| US8913321B2 (en) | 2010-09-21 | 2014-12-16 | Moxtek, Inc. | Fine pitch grid polarizer |
| US8611007B2 (en) * | 2010-09-21 | 2013-12-17 | Moxtek, Inc. | Fine pitch wire grid polarizer |
| JP5244889B2 (ja) | 2010-10-28 | 2013-07-24 | 富士フイルム株式会社 | 立体画像印刷用印画紙、立体画像印刷物、及び立体画像の提供方法 |
| JP5760388B2 (ja) * | 2010-11-01 | 2015-08-12 | セイコーエプソン株式会社 | 偏光素子とその製造方法、プロジェクター、液晶装置、電子機器 |
| US20150077851A1 (en) | 2010-12-30 | 2015-03-19 | Moxtek, Inc. | Multi-layer absorptive wire grid polarizer |
| WO2012115059A1 (ja) | 2011-02-22 | 2012-08-30 | 旭硝子株式会社 | 微細構造成形体および該微細構造成形体を備えた液晶表示装置 |
| US20120219801A1 (en) | 2011-02-25 | 2012-08-30 | Yu-Hui Huang | Hydrophobic and lipophobic coating material |
| JP6051562B2 (ja) * | 2011-04-28 | 2016-12-27 | セントラル硝子株式会社 | 撥水性保護膜形成用薬液 |
| CN104105598B (zh) | 2012-01-27 | 2017-04-26 | 三星Sdi株式会社 | 用于视窗片的层压板、包括它的视窗片和包括它的显示设备 |
| WO2014012079A1 (en) | 2012-07-13 | 2014-01-16 | President And Fellows Of Harvard College | Multifunctional repellent materials |
| JP6100492B2 (ja) | 2012-09-05 | 2017-03-22 | デクセリアルズ株式会社 | 偏光素子、プロジェクター及び偏光素子の製造方法 |
| JP6268692B2 (ja) * | 2012-09-14 | 2018-01-31 | 大日本印刷株式会社 | 光学積層体、偏光板及び画像表示装置 |
| JP2014077972A (ja) * | 2012-09-18 | 2014-05-01 | Ricoh Co Ltd | 光学フィルタ及び該光学フィルタを備える撮像装置、並びに光学フィルタの製造方法 |
| JP2014085516A (ja) * | 2012-10-24 | 2014-05-12 | Asahi Kasei E-Materials Corp | ワイヤグリッド偏光板及びその製造方法 |
| JP2014209558A (ja) * | 2013-03-27 | 2014-11-06 | 東京エレクトロン株式会社 | シリコン酸化膜の形成方法、及び、シリコン酸化膜の形成装置 |
| US9666766B2 (en) | 2013-08-21 | 2017-05-30 | Pacific Light Technologies Corp. | Quantum dots having a nanocrystalline core, a nanocrystalline shell surrounding the core, and an insulator coating for the shell |
| KR20150029817A (ko) * | 2013-09-10 | 2015-03-19 | 삼성디스플레이 주식회사 | 편광판, 이를 갖는 표시장치 및 이의 제조방법 |
| US9703028B2 (en) * | 2015-04-03 | 2017-07-11 | Moxtek, Inc. | Wire grid polarizer with phosphonate protective coating |
| US9995864B2 (en) * | 2015-04-03 | 2018-06-12 | Moxtek, Inc. | Wire grid polarizer with silane protective coating |
-
2016
- 2016-03-23 US US15/078,495 patent/US10054717B2/en active Active
- 2016-03-29 EP EP16773995.2A patent/EP3237943B1/en active Active
- 2016-03-29 KR KR1020177027671A patent/KR20170134422A/ko not_active Ceased
- 2016-03-29 JP JP2017538195A patent/JP7059497B2/ja active Active
- 2016-03-29 CN CN202010697586.7A patent/CN111766656A/zh active Pending
- 2016-03-29 CN CN201680018879.XA patent/CN107533172B/zh active Active
- 2016-03-29 WO PCT/US2016/024713 patent/WO2016160803A1/en not_active Ceased
-
2020
- 2020-05-20 JP JP2020088222A patent/JP7088497B2/ja active Active
-
2022
- 2022-01-13 JP JP2022003989A patent/JP2022044664A/ja active Pending
- 2022-05-31 JP JP2022089259A patent/JP2022107723A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP3237943A1 (en) | 2017-11-01 |
| CN111766656A (zh) | 2020-10-13 |
| JP2022107723A (ja) | 2022-07-22 |
| EP3237943A4 (en) | 2018-07-04 |
| US10054717B2 (en) | 2018-08-21 |
| WO2016160803A1 (en) | 2016-10-06 |
| EP3237943B1 (en) | 2021-01-13 |
| US20160291208A1 (en) | 2016-10-06 |
| JP2022044664A (ja) | 2022-03-17 |
| JP2018511816A (ja) | 2018-04-26 |
| JP2020122991A (ja) | 2020-08-13 |
| CN107533172A (zh) | 2018-01-02 |
| JP7088497B2 (ja) | 2022-06-21 |
| CN107533172B (zh) | 2020-08-14 |
| JP7059497B2 (ja) | 2022-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11513272B2 (en) | Wire grid polarizer with silane protective coating | |
| KR20170134422A (ko) | 와이어 격자 편광자용 산화 및 수분 장벽 | |
| US9703028B2 (en) | Wire grid polarizer with phosphonate protective coating | |
| US10534120B2 (en) | Wire grid polarizer with protected wires | |
| US10302832B2 (en) | Embedded wire grid polarizer with high reflectivity on both sides | |
| US10656309B2 (en) | Overcoat wire grid polarizer having overcoat layer spanning air-filled channels | |
| WO2016160786A1 (en) | Wire grid polarizer with silane protective coating | |
| JP6588436B2 (ja) | 偏光系 | |
| WO2016160784A1 (en) | Wire grid polarizer with water-soluble materials | |
| WO2016160795A1 (en) | Wire grid polarizer with phosphonate protective coating | |
| WO2018097873A1 (en) | Overcoat wire grid polarizer | |
| JP2005258028A (ja) | 光学部品及び投写型表示装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20170928 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20201019 Comment text: Request for Examination of Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20220622 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20221229 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20220622 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |