KR20160145596A - Ｏｌｅｄ를 위한 지지된 투명 전극 - Google Patents

Ｏｌｅｄ를 위한 지지된 투명 전극 Download PDF

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KR20160145596A
KR20160145596A KR1020167029067A KR20167029067A KR20160145596A KR 20160145596 A KR20160145596 A KR 20160145596A KR 1020167029067 A KR1020167029067 A KR 1020167029067A KR 20167029067 A KR20167029067 A KR 20167029067A KR 20160145596 A KR20160145596 A KR 20160145596A
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layer
enamel
oled
tco
ald
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Korean (ko)
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영성 이
진우 한
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쌩-고벵 글래스 프랑스
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    • H01L51/5206—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
    • C03C17/04—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass by fritting glass powder
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • H01L51/0096—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H01L2251/303—
    • H01L2251/305—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Non-Insulated Conductors (AREA)
KR1020167029067A 2014-04-22 2015-04-20 Ｏｌｅｄ를 위한 지지된 투명 전극 Ceased KR20160145596A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1453584A FR3020179B1 (fr) 2014-04-22 2014-04-22 Electrode supportee transparente pour oled
FR1453584 2014-04-22
PCT/FR2015/051069 WO2015162367A1 (fr) 2014-04-22 2015-04-20 Electrode supportee transparente pour oled

Publications (1)

Publication Number Publication Date
KR20160145596A true KR20160145596A (ko) 2016-12-20

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ID=50976932

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Application Number Title Priority Date Filing Date
KR1020167029067A Ceased KR20160145596A (ko) 2014-04-22 2015-04-20 Ｏｌｅｄ를 위한 지지된 투명 전극

Country Status (10)

Country Link
US (1) US10319934B2 (enExample)
EP (1) EP3134929B1 (enExample)
JP (1) JP6684225B2 (enExample)
KR (1) KR20160145596A (enExample)
CN (1) CN106463641B (enExample)
ES (1) ES2702210T3 (enExample)
FR (1) FR3020179B1 (enExample)
RU (1) RU2685086C2 (enExample)
TW (1) TWI663761B (enExample)
WO (1) WO2015162367A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3082172A1 (en) 2015-04-16 2016-10-19 Saint-Gobain Glass France Layered structure for an oled and a method for producing such a structure
CN112876078A (zh) * 2021-04-14 2021-06-01 亚细亚建筑材料股份有限公司 一种高透感面釉
US11527732B1 (en) 2022-05-31 2022-12-13 Applied Materials, Inc. OLED anode structures including amorphous transparent conducting oxides and OLED processing method comprising the same

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FR1360522A (fr) 1962-06-15 1964-05-08 Automotive Prod Co Ltd Système de freinage fonctionnant par une pression de liquide pour véhicules
JP2000231985A (ja) * 1999-02-12 2000-08-22 Denso Corp 有機ｅｌ素子
JP2002343562A (ja) * 2001-05-11 2002-11-29 Pioneer Electronic Corp 発光ディスプレイ装置及びその製造方法
US20060154550A1 (en) 2002-10-16 2006-07-13 Nellissen Antonius J M Method for manufacturing a light emitting display
WO2005053053A1 (en) 2003-11-26 2005-06-09 Koninklijke Philips Electronics N.V. Light-emitting device comprising an etch-protective layer
US7508130B2 (en) * 2005-11-18 2009-03-24 Eastman Kodak Company OLED device having improved light output
EP1916725A1 (en) 2006-10-27 2008-04-30 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Organic light emitting diode device with multilayer seal
CN101766052B (zh) * 2007-07-27 2012-07-18 旭硝子株式会社 透光性基板、其制造方法、有机led元件及其制造方法
JPWO2009116531A1 (ja) * 2008-03-18 2011-07-21 旭硝子株式会社 電子デバイス用基板、有機ｌｅｄ素子用積層体及びその製造方法、有機ｌｅｄ素子及びその製造方法
DE102009024411A1 (de) * 2009-03-24 2010-09-30 Osram Opto Semiconductors Gmbh Dünnschichtverkapselung für ein optoelektronisches Bauelement, Verfahren zu dessen Herstellung und optoelektronisches Bauelement
DE102009022900A1 (de) * 2009-04-30 2010-11-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
CN102574727B (zh) * 2009-10-15 2015-06-24 旭硝子株式会社 有机led元件的散射层用玻璃以及使用该玻璃的有机led元件
KR20120098611A (ko) * 2009-10-15 2012-09-05 아사히 가라스 가부시키가이샤 유기 ｌｅｄ 소자, 유기 ｌｅｄ 소자의 산란층용의 유리 프릿 및 유기 ｌｅｄ 소자의 산란층의 제조 방법
RU2408957C1 (ru) * 2009-11-25 2011-01-10 Российская Федерация, от имени которой выступает государственный заказчик - Министерство промышленности и торговли Российской Федерации (Минпромторг России) Органический светоизлучающий диод
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US9222641B2 (en) * 2010-07-16 2015-12-29 Agc Glass Europe Translucent conductive substrate for organic light emitting devices
JPWO2012014812A1 (ja) * 2010-07-26 2013-09-12 旭硝子株式会社 有機ｌｅｄ素子の散乱層用ガラス及び有機ｌｅｄ素子
FR2963705B1 (fr) * 2010-08-06 2012-08-17 Saint Gobain Support a couche diffusante pour dispositif a diode electroluminescente organique, dispositif electroluminescent organique comportant un tel support
JP5938757B2 (ja) * 2011-11-25 2016-06-22 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光素子基板とその製造方法、面発光素子、照明器具およびバックライト
JP5998124B2 (ja) * 2011-03-31 2016-09-28 旭硝子株式会社 有機ｌｅｄ素子、透光性基板、および透光性基板の製造方法
WO2012147685A1 (ja) * 2011-04-28 2012-11-01 旭硝子株式会社 有機ｅｌ素子、透光性基板および有機ｌｅｄ素子の製造方法
JPWO2013054820A1 (ja) * 2011-10-14 2015-03-30 旭硝子株式会社 有機ｌｅｄ素子の散乱層用ガラス、有機ｌｅｄ素子用の積層基板及びその製造方法、並びに有機ｌｅｄ素子及びその製造方法
CN103891404B (zh) * 2011-10-28 2016-11-09 旭硝子株式会社 有机led元件用层叠基板及有机led元件
FR2986909B1 (fr) * 2012-02-10 2014-11-21 Saint Gobain Electrode supportee transparente pour oled
KR20130111156A (ko) * 2012-03-30 2013-10-10 주식회사 엘지화학 유기전자소자용 기판
KR101715112B1 (ko) * 2012-06-14 2017-03-10 쌩-고벵 글래스 프랑스 Ｏｌｅｄ 소자용 적층체, 그 제조방법 및 이를 구비한 ｏｌｅｄ 소자
FR2993707B1 (fr) * 2012-07-17 2015-03-13 Saint Gobain Electrode supportee transparente pour oled
ES2548048T3 (es) * 2012-09-28 2015-10-13 Saint-Gobain Glass France Método de para producir un sustrato OLED difusor transparente
RU2683454C2 (ru) 2013-02-25 2019-03-28 Сэн-Гобэн Гласс Франс Подложка для устройства с органическим электролюминесцентным диодом

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Publication number Publication date
JP2017514279A (ja) 2017-06-01
US20170040565A1 (en) 2017-02-09
RU2685086C2 (ru) 2019-04-16
EP3134929B1 (fr) 2018-09-19
TW201605095A (zh) 2016-02-01
RU2016145417A3 (enExample) 2018-11-19
ES2702210T3 (es) 2019-02-27
CN106463641B (zh) 2018-09-28
WO2015162367A1 (fr) 2015-10-29
EP3134929A1 (fr) 2017-03-01
RU2016145417A (ru) 2018-05-23
JP6684225B2 (ja) 2020-04-22
TWI663761B (zh) 2019-06-21
CN106463641A (zh) 2017-02-22
FR3020179B1 (fr) 2017-10-06
FR3020179A1 (fr) 2015-10-23
US10319934B2 (en) 2019-06-11

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