KR20160134024A - Heat Radiating Apparatus of the LED Lighting Fixture using a Silver Paste - Google Patents
Heat Radiating Apparatus of the LED Lighting Fixture using a Silver Paste Download PDFInfo
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- KR20160134024A KR20160134024A KR1020150067389A KR20150067389A KR20160134024A KR 20160134024 A KR20160134024 A KR 20160134024A KR 1020150067389 A KR1020150067389 A KR 1020150067389A KR 20150067389 A KR20150067389 A KR 20150067389A KR 20160134024 A KR20160134024 A KR 20160134024A
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- heat
- heat sink
- silver paste
- led
- led lighting
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 36
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Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
- F21V29/89—Metals
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
- F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
-
- F21V29/004—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
BACKGROUND OF THE
Recently, paradigm in the field of lighting technology has been attracting attention for LED (Light-Emitting Diode) lighting which is eco-friendly, low consumption and excellent in electric efficiency.
Currently, LED chips for high-brightness lighting produce voltage (V F ) of 3.3 V (I F ) 700 [mA] at most 1 ~ 3 [W] The problem of heat dissipation for the high heat of the rear side of the LED chip is emerging as the biggest issue.
The heat generated from the LED chip is determined by the product of the current flowing through the device and its own forward voltage. The light output at 100 [%] at 25 [° C] is 60 [%] at 80 [ There is a tendency to decrease. Unlike other semiconductor devices, the power applied to the LED package is only 10 ~ 30 [%] that consumed by the light, so it is absolutely required to design and manufacture a heat sink for thermal management.
The basic structure of the LED package is largely composed of an LED chip, a package, a printed circuit board (PCB), a thermal interface material (TIM), and a heat sink. The LED package containing the chip is used as a basic unit element for constructing the LED system and mounted on the PCB by SMT (Surface Mount Technology). The PCB on which the LED chip is mounted is made of a large-sized aluminum material such as a radiator structure through a heat transfer material (or heat transfer adhesive) such as a thermal transfer tape, a thermal transfer grease and a heat-resistant sheet. And attached to the heat sink (see Fig. 1).
In this heat dissipation method, a heat transfer adhesive attaching a PCB and a large aluminum heat sink gradually cures when a high temperature occurs in the LED chip, thereby separating the copper thin film of the PCB. The separated copper film greatly increases the thermal resistance of the junction unit, which ultimately interferes with the heat dissipation of the entire LED package, thereby shortening the lifetime of the LED.
One of the most notable technologies for heat dissipation in LED packages is chip on board (COB, Chip On Board) package technology. When the chip is directly placed on an aluminum or plastic substrate with high thermal conductivity, the intermediate insulation layer is lost and the temperature can be lowered. The encapsulated encapsulant used to protect the LED chip and the lead frame also focuses on improving the heat dissipation function by controlling the silicon compounding ratio. The heat sink of the finished lighting product is made of aluminum alloy with aluminum content of 80 [%] so far because of workability, but magnesium material which is better heat dissipation than aluminum is used in addition to material development. The heat sink structure is designed to be easily heat-dissipated as much as possible. The heat sink is made of a via-hole to spread the aluminum and air contact surface, and the heat sink is turned into a fan shape to reduce the size and increase the heat radiation effect. A competitive advantage is that printed circuit boards and flexible copper clad laminate (FCCL), which are used as the main substrate of electronic components, improve the heat dissipation function. Recently, a flexible copper-clad laminate having a thermal conductivity of 2 [W / m · K] is used. However, in recent years, the thermal conductivity is 5 [W / m · K] ] Rapid ductile copper-clad laminates have also been developed. In addition, there is a lot of movement to find materials for interfacial materials with high heat dissipation function. Graphene, which is called new material of dream and can be removed from graphite with excellent electron mobility and high thermal conductivity as a single layer carbon film, is also seen as a next generation heat dissipation material. In addition, single-wall carbon nanotubes (SWCNTs) and multi-wall carbon nanotubes (MWCNTs) have been proposed as materials having good electron mobility and thermal conductivity in addition to graphene, The response speed can be increased 10 times or more and the heat generation can be reduced.
Meanwhile, in June 2012, Fujii Japan surveyed the world market for heat dissipation materials and materials, which are required due to high power output and light weight shortening of electronic / electric parts and semiconductors. In the year 2011, the market for heat dissipation members increased by 7.5% from the previous year to 305.1 billion yen. In particular, it is predicted that the heat dissipation board growth will lead to market expansion, and that by 2017, 38.2% . Aluminum base circuit boards, aluminum nitride base circuit boards, silicon nitride base circuit boards and other heat-dissipating boards have been affected by the increase in semiconductor production, and the market is expanding. Among them, the alumina base circuit board and the aluminum nitride base circuit board are expected to have a large market effect because the unit price is high and the demand is rapidly increasing. Future market trends of heat dissipation devices are as follows: heat dissipation sheet (heat dissipation member) using Graphene, aluminum nitride base circuit board (heat dissipation member), heat dissipation engineering plastic (heat dissipation material) Technology, and thermal coatings.
Accordingly, in the embodiment of the present invention, a heat sink having a heat conductor by a new mixed composition unlike the conventional heat transfer tape, heat transfer grease and heat dissipating sheet is proposed.
Accordingly, an object of the present invention is to solve the problems of the prior art, and more particularly, to provide a high-efficiency LED chip constituting a parallel circuit, and a method of manufacturing a Nano Diamond A first heat sink having a thermal conductor formed by mixing a metal powder with a silver paste and a thermal conductor and a RF plasma electric field processor, By constructing a second heat sink, which is a large heat radiator formed by a metal foil of a pin substrate (Graphene Substrate) and an open cell type (OCT), a high heat generated from the LED chip Provided is a heat dissipating device for an LED lighting apparatus using a silver paste so as to maximize heat dissipation effect and prolong its service life by quickly conducting and diffusing it into a large heat sink.
According to an aspect of the present invention, there is provided a heat dissipation device for an LED lighting apparatus, wherein the heat dissipation device comprises at least one LED chip (110) formed of a parallel circuit and mounted by SMT (Surface Mount Technology) A double-layer printed circuit board (FR-4 PCB) 100 having a through-
According to another embodiment of the present invention, when the secondary
According to another embodiment of the present invention, when the mixed material having a thermal conductor is stacked on the through-hole and the heat treatment is performed, the through-
According to another embodiment of the present invention, the
According to another embodiment of the present invention, the
According to another embodiment of the present invention, the
According to another embodiment of the present invention, the thermal resistance measurement region and the thermal resistance value of the heat dissipating device of the LED lighting apparatus using the silver paste are determined by a
The heat dissipating device of the LED lighting apparatus using the silver paste of the present invention has the following effects.
(1) The high heat generated from the LED chip heat dissipation port can be quickly conducted to and diffused through the large heat sink through the heat sink sintered with the highly thermally conductive composite composition, thereby maximizing the heat radiation effect by natural convection.
(2) By forming a copper thin film on the epoxy layer of the FR-4 PCB through hole, the thermal resistance of the contact portion can be minimized by maintaining the adhesion and airtightness with the mixed composition of diamond powder, metal, .
(3) When a secondary optical lens is used in an LED chip to increase the straightness and diffusibility of light when designing and installing a large LED lighting apparatus such as a street lamp or a security lamp by drilling a plurality of via holes on the FR-4 PCB, The heat of the space inside the secondary optical lens can be easily dissipated.
(4) By adopting the graphene nano-wall grown substrate, the high heat generated from the high efficiency LED chip can be quickly transferred to the edge of the LED package having the relative cooling load or the external heat sink It is possible to maximize the luminous efficiency of the LED package and prolong its service life.
(5) By adopting aluminum or metal foam as the large ventilation hole, it is possible to increase the heat dissipation effect and dramatically reduce the weight of the LED lighting fixture when it is applied to the ventilation openings of large LED lighting lamps such as street lamps, It is possible to greatly reduce the installation cost of the same street light.
FIG. 1 is a diagram illustrating an LED heat dissipation technique for the prior art; FIG.
2 is a view showing a structure of an FR-4 PCB for a heat dissipation device of an LED lighting fixture using silver paste according to an embodiment of the present invention
3 is a view illustrating a heat sink manufacturing process of an LED package for a heat dissipating device of an LED lighting apparatus using a silver paste according to an embodiment of the present invention.
4 is a view showing the entire structure of an LED package for a heat dissipating device of an LED lighting apparatus using silver paste according to an embodiment of the present invention
FIG. 5 is a schematic view of a heat dissipating device of an LED lighting apparatus using a silver paste according to an embodiment of the present invention. FIG. 5 (a) shows a heat flow path of an FR- A plot showing the temperature distribution of the heat taken
FIG. 6 is a graph showing the results of (a) growth of a graphene nano-wall grown on a graphene substrate and (b) growth of a graphene nano-wall of a LED lighting apparatus using a silver paste according to a preferred embodiment of the present invention. Drawings showing the state after growth
7 is a graph showing the results of analyzing the surface morphology of the graphene nano-wall according to the Raman spectrum of FIG. 6
8 is a graph showing the results of experiments on the thermal conductivity of a heat dissipating device of an LED lighting apparatus using a silver paste according to an embodiment of the present invention at an ambient temperature of 26 to 27 [
9 is a graph showing a sensitivity (K-factor) of a measuring instrument for a heat dissipating device of an LED lighting apparatus using silver paste according to an embodiment of the present invention
10 is a graph showing a result of temperature measurement of a junction temperature of an LED package for a heat dissipating device of an LED lighting apparatus using silver paste according to an embodiment of the present invention
11 is a graph showing the thermal resistance of an LED package according to ambient temperature and humidity for a heat dissipating device of an LED lighting apparatus using silver paste according to an embodiment of the present invention
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals refer to like elements throughout. Although the same reference numerals are used in the different drawings, the same reference numerals are used throughout the drawings. The prior art should be interpreted by itself. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.
Referring to FIGS. 2 to 4, a technical structure of a heat dissipating device of an LED lighting apparatus using silver paste according to a preferred embodiment of the present invention includes a double layer printed circuit board (FR-4 PCB) 100, A
FIG. 2 illustrates a structure of an FR-4 PCB for a heat dissipating device of an LED lighting apparatus using a silver paste according to a preferred embodiment of the present invention.
The double-layer printed circuit board (FR-4 PCB 100) is a printed circuit board on which an LED chip and an electric circuit network (not shown) for driving the LED chip are mounted. One or
Here, a printed circuit board (PCB) such as the FR-4
Therefore, in the embodiment of the present invention, a high-efficiency thermally conductive test board (FR-4 PCB) is used to reduce the thermal resistance of the LED package placed on the PCB, and a through
In the double-layer printed circuit board (FR-4 PCB) 100 according to the embodiment of the present invention, when the secondary
Here, in the case of using the secondary
In addition, the through-
2 and 3, the through
In other words, when a mixed composition of diamond powder, metal, polymer, or the like having a very high thermal conductivity is laminated on the through
Here, FIG. 3 illustrates a heat sink manufacturing process of an LED package for a heat dissipating device of an LED lighting apparatus using a silver paste according to a preferred embodiment of the present invention.
First, a through
Here, the through
Next, the copper thin film is inserted into the
In addition, a composition obtained by mixing Nano-diamond powder and metal with silver paste into a through hole having a copper thin film inserted into the epoxy layer is highly laminated, (Heat treatment) for 5 hours to form a
Here, the first heat sink may be formed by stacking a composition in which a nano-diamond powder having thermal conductivity and a metal are mixed with methanol in a through hole in which a copper thin film is inserted into the epoxy layer, And then sintered (heat-treated) at 100 [deg.] C for 5 hours to form a single heat conductor.
The first heat sink may be formed by mixing a nano-diamond powder having thermal conductivity into a through-hole in which a copper thin film is inserted into the epoxy layer, and a metal by conductive polymers And then sintered (heat-treated) at 100 [deg.] C for 5 hours to form a single heat conductor.
In addition, after the cream soldering is performed on the
And the
Here, the graphene nano-wall growth by the RF plasma electric field processor will be described later. By growing graphene nano-walls on both sides of the substrate of the substrate, the high heat conducted in the first heat sink, which is cream- The heat dissipation characteristics of the LED package can be greatly improved by conducting and diffusing it to the edge of the
In addition, the sample of the substrate according to the heat sink manufacturing process of the present invention includes one selected from aluminum, conductive polymer, and copper having thermal conductivity.
FIG. 4 is a view illustrating the entire structure of an LED package for a heat dissipating device of an LED lighting apparatus using a silver paste according to a preferred embodiment of the present invention.
Referring to FIG. 4, the
Here, the nano diamond powder is a mixed composition of a
Therefore, in the embodiment of the present invention, in order to conduct the high heat generated in the heat dissipation hole of the
The metal is a mixed composition of a first heat sink having a heat conductor according to an embodiment of the present invention and has a high electrical conductivity and a high thermal conductivity and is excellent in malleability and ductility, Is a crystalline solid material with a large and high reflectivity. In most cases, it has a relatively simple crystal structure, so the arrangement of atoms is dense and highly symmetrical. Particularly, since the number of outermost electrons of metal atoms is less than half of the maximum number, the metals do not easily form a compound. However, it usually binds more easily with non-metals (eg, oxygen and sulfur), which usually have more than half of the maximum valence electrons. The chemical reactivity of metals is greatly different. Lithium (Li), potassium, and radium (Ra) are the most reactive metals, and gold, silver, palladium (Pd) and platinum are low reactivity. The non-transition metal of the periodic table has high electrical conductivity and thermal conductivity due to free electrons. According to the theory of free electrons, each atom in these metals loses atomic electrons, and the resulting free electrons move as a bundle between the metal atoms, turning the metal into a conductive material.
Therefore, in the embodiment of the present invention, the high heat generated from the heat dissipation port of the
The
Here, the heat treatment at 100 [deg.] C for 5 hours is performed by laminating and sintering the composition obtained by mixing the nanodiamond powder and the metal with silver paste to obtain a completely new heat conductor having a function of a heat sink having a very low heat resistance For manufacturing.
5 (a) and 5 (b) show the heat flow path of the FR-4 PCB conductive plate on which a plurality of LED chips are mounted and the heat temperature distribution photographed by the thermal imaging camera.
5 (a) and 5 (b), heat generated from the LED chip mounted on the FR-4 PCB is concentrated in the center, and a lower heat flow is seen toward the edge. Nevertheless, the cold plate is installed at the outermost side of the
Therefore, in the embodiment of the present invention, in order to conduct and diffuse the heat temperature distribution concentrated at the center of the FR-4 PCB having a plurality of LED chips mounted thereon to the edge having a relative cooling load, thermal conduction and thermal diffusivity are better than diamonds And is solved through the substrate on which the fin material is grown.
Referring to FIGS. 3, 4 and 6 to 8, a
Here, the graphene has a two-dimensional structure in which a carbon atom is tightly enclosed by a hexagonal lattice point of a honeycomb shape, and has electrical conduction characteristics, thermal conductivity, and photoconductive properties that are very different from those of conventional three-dimensional materials . Graphene is a carbon isotope of about 0.35 [nm] thickness composed of sp2 (pia structure) hybrid bonds. Its tensile strength is more than 200 times stronger than steel, its electron mobility is more than 1,000 times faster than silicon (~ 20,000 [ cm2 / Vs])) and the thermal conductivity is 10 times higher than that of copper.
The
The
FIG. 6 is a graph showing the relationship between (a) and (b) before growth of a graphene nano-wall grown on a
In order to grow the Graphene Nano-Wall, a substrate sample was prepared by repeatedly polishing an aluminum (Al) or copper (Cu) plate having a constant size and thoroughly cleaning it. A Graphene Nano-Wall was grown on both sides of the substrate by an RF plasma electric field processor, and RF power having a frequency of 13.56 [MHz] was used. Under parallel resonance conditions of L and C, (Outer diameter: 50 [mm]) by the flow of the tank current flowing in the process chamber.
The inside of the quartz tube is pressurized by a rotary pump at a constant pressure
FIG. 7 shows a result of Raman spectrum analysis of the surface shape of the graphene nano-wall grown on the substrate sample described above with reference to FIG.
It can be seen from the graph that there is a very high 2D peak corresponding to graphene. Graphene can be judged by the presence or absence of a 2D peak, and when the D peak is as small as possible and clearly separated from the G peak, the crystallinity of graphene is high. It can be seen that the D peak and the G peak are clearly separated, and the 2D peak is graphene which is highly crystalline since it is almost similar to the intensity of the G peak.
FIG. 8 is a graph illustrating the thermal conductivity of a heat dissipating device of an LED lighting apparatus using a silver paste according to a preferred embodiment of the present invention at an ambient temperature of 26 to 27 [deg.] C using a graphene substrate.
The
On the graph, it can be seen that the edge temperature is the highest in the vicinity of 150 [sec] after the lapse of a certain period of time, and then decreases in the order of the middle portion and the portion immediately below the LED. The edge is 125.5 [℃] at the maximum temperature, 121.5 [℃] at the middle part, and 107.5 [℃] at the lower part, and the temperature difference is about 18 [℃] at the edge. This means that the temperature at the edge of the substrate is raised to the highest level due to diffusion heat of the high-efficiency LED chip by the graphene nano-wire to the side portion.
Accordingly, when the graphene nano-wall grown
According to the embodiment of the present invention, instead of the
Referring again to FIG. 4, the
Here, the metal foam is a porous metal having a large number of bubbles in a metal material, and is classified into an open cell type (OCT) and a closed cell type (CCT). In the case of the alveolar-type foamed metal, bubbles inside the metal are not connected but exist independently. In the case of the open-celled foamed metal, the pores inside the metal material are connected to each other, The applications are so incomparable. That is, the foamed metal foam is a dodecahedron structure having a structure similar to a bone of a human body in terms of shape, and has a stable structure that is not inferior to a hexagonal structure such as an isotropic anisotropic honeycomb structure have. In addition to this structural stability, it has a surface area that can not be implemented mechanically. Applications include aircraft, automobiles, power plants, heat exchangers for power devices, heat sinks for semiconductors, silencers for large plants, catalysts for chemical plants, aircraft requiring high strength and light weight, and structural materials for the space industry , A shock absorber, a fuel cell (fuel cell) and a filter.
Therefore, in the embodiment of the present invention, it is possible to greatly reduce the installation cost of the street lamp such as the support pipe supporting the high weight by greatly reducing the weight of the LED lighting apparatus and enhancing the heat dissipation effect when the apparatus is used as a heat radiator such as a large- Feature.
Hereinafter, the thermal temperature and thermal resistance of the
<Examples>
The
Here, in order to measure the thermal resistance characteristics of the LED package, two LED chips are mounted in parallel on a FR-4
Referring to FIG. 4, the thermal resistance measuring part is composed of 4% by weight of the nanodiamond powder of the rear portion of the sample (FR-4 PCB Lower Copper) on which the high-efficiency LED chip is mounted and 1% And a
9, the application of the test parameters according to the embodiment of the present invention has the following characteristics: a driving current of 0.35 A, a sensor current of 0.001 A, an applied power of 0.986 W, and a Sensitivity (K-Factor) of -1.907 [mV / K], Measurement Delay & Time Limit: 180 [s], Transient correction: 47 ~ 58 [us], TIM Type: PAD (Taica alpha -GEL COH 4000)
10, the K-factor of the thermal resistance measuring apparatus according to the embodiment of the present invention is -1.907 [mV / K], the ambient temperature is 25 [° C] and the humidity (50 ± 10) [% The temperature rise of the LED package in RH (Relative Humidity) was 6.69 [℃], and the junction temperature was 31.69 [℃] in addition to the ambient temperature and LED package temperature rise.
11, the thermal resistance of the LED package, which determines the heat dissipation characteristics of the heat dissipating device of the LED lighting apparatus using silver paste according to the embodiment of the present invention, is 6.78 [K / W] at an ambient temperature of 25 [ .
This is because, in the case of mixing at least one material having a relatively large particle size of 4% by weight and a metal of 1% by weight with a small silver paste (Ag Paste) It is understood that the heat conductivity affects the thermal conductivity according to the density to be compounded and is reduced to 1 / 6.8 times the thermal resistance 46 [K / W] of the conventional via-hole method, And the thermal conductivity is greatly improved by decreasing to 1 / 5.3 times as compared with 36 [K / W].
The foregoing description is merely illustrative of the technical idea of the present invention and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the scope of the present invention but to limit the scope of the technical idea of the present invention. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.
100: Double Layer Printed Circuit Board (FR-4 PCB)
101: epoxy layer 102: upper copper thin film
103: lower copper thin film 104: copper thin film (diameter 0.07 mm)
110: LED chip 120: Through hole
130: via hole 140: secondary optical lens
200: first heat sink
300: Graphene substrate
400: second heat sink
Claims (7)
In the heat dissipating device, one or more LED chips 110 may be formed of a parallel circuit and may be mounted by SMT (Surface Mount Technology), and a first heat sink may be laminated to conduct heat from the heat dissipation holes of the LED chip to a large heat sink. A double-layer printed circuit board (FR-4 PCB, 100) having a through-hole (120)
A first heat sink (not shown) having a small thermal conductor is formed by mixing Nano Diamond Powder and Metal with Ag paste in a through hole of the double layer printed circuit board, First Heat Sink, 200);
The upper portion of the first heat sink is in contact with the LED chip heat releasing port. The lower portion of the first heat sink is in contact with a second heat sink, which is a large heat sink, to conduct the high heat conducted from the first heat sink to the second heat sink. A Graphene Substrate 300 for diffusing electrons;
A large heat radiator that is formed by a metal foam of an open cell type (OCT) in which pores are connected to each other in a metallic material which is cooled by a natural convection method, And a second heat sink (400). The heat dissipating device of the LED lighting apparatus using the silver paste.
The double-layer printed circuit board (FR-4 PCB, 100) has a ventilation hole for dissipating the heat inside the secondary optical lens to the outside when the secondary optical lens 140 is mounted on the LED chip 110 Wherein a plurality of vias (130) are perforated in the LED lighting fixture.
The through-hole 120 is formed in a thickness of 0.07 mm in the epoxy layer 101 of the through hole so as to maintain the air-tightness and reduce the thermal resistance when the mixed material having the heat conductor is laminated on the through- And a copper thin film (Copper Thin Film) 104 is inserted into the opening of the LED lighting apparatus.
The first heat sink 200 is prepared by mixing 4% by weight of a Nano Diamond Powder and 1% by weight of a metal with Ag paste and then heat-treating at 100 [deg.] C for 5 hours Wherein the heat sink is made of a silver paste.
The graphene substrate 300 is selected from a substrate sample having an aluminum (Al) or copper (Cu) flat plate having a predetermined size, and the substrate sample is subjected to repetitive polishing and cleaning, Wherein a graphene nano-wall is grown on the upper and lower surfaces of the sample by an RF plasma electric field processor.
The Graphene Substrate 300 is disposed between the lower copper film 103 of the FR-4 PCB 100 on which the first heat sink 200 is stacked and the upper surface of the second heat sink 400 And the heat sink is fixedly attached to the heat sink by fastening means.
The thermal resistance measurement site and the thermal resistance value of the heat dissipating device of the LED lighting apparatus using the silver paste are measured by using a first heat sink 200 having the heat conductor and a second heat sink 200 formed of a metal foam, And the heat resistance value is 6.78 [K / W] at an ambient temperature of 25 [deg.] C, and a heat dissipation device of the LED lighting apparatus using the silver paste.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101963738B1 (en) * | 2017-11-16 | 2019-03-29 | (주)제이엔텍 | Led lighting apparatus |
| KR20200089503A (en) * | 2019-01-17 | 2020-07-27 | 정상옥 | Led light apparatus with air cooling type heat radiating structure |
| US11002443B2 (en) | 2018-11-21 | 2021-05-11 | Honeywell International Inc. | Lighting system with deformable heat bridge |
| KR102314224B1 (en) * | 2021-04-06 | 2021-10-19 | 주식회사 젬 | LED lighting |
| CN114068790A (en) * | 2021-09-18 | 2022-02-18 | 谷麦光电科技股份有限公司 | Multi-chip packaging structure applied to dynamic backlight |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US11582866B1 (en) * | 2021-07-22 | 2023-02-14 | Toyota Motor Engineering & Manufacturing North America, Inc. | Systems including a power device-embedded PCB directly joined with a cooling assembly and method of forming the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5685863B2 (en) | 2010-09-02 | 2015-03-18 | 住友ベークライト株式会社 | Light source device |
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2015
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101963738B1 (en) * | 2017-11-16 | 2019-03-29 | (주)제이엔텍 | Led lighting apparatus |
| US11002443B2 (en) | 2018-11-21 | 2021-05-11 | Honeywell International Inc. | Lighting system with deformable heat bridge |
| KR20200089503A (en) * | 2019-01-17 | 2020-07-27 | 정상옥 | Led light apparatus with air cooling type heat radiating structure |
| KR102314224B1 (en) * | 2021-04-06 | 2021-10-19 | 주식회사 젬 | LED lighting |
| CN114068790A (en) * | 2021-09-18 | 2022-02-18 | 谷麦光电科技股份有限公司 | Multi-chip packaging structure applied to dynamic backlight |
| CN114068790B (en) * | 2021-09-18 | 2023-10-24 | 谷麦光电科技股份有限公司 | Multi-chip packaging structure applied to dynamic backlight |
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|---|---|
| KR101751108B1 (en) | 2017-06-26 |
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