KR101751109B1 - A heat sink manufacturing method of the LED lighting fixture - Google Patents
A heat sink manufacturing method of the LED lighting fixture Download PDFInfo
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- KR101751109B1 KR101751109B1 KR1020150067403A KR20150067403A KR101751109B1 KR 101751109 B1 KR101751109 B1 KR 101751109B1 KR 1020150067403 A KR1020150067403 A KR 1020150067403A KR 20150067403 A KR20150067403 A KR 20150067403A KR 101751109 B1 KR101751109 B1 KR 101751109B1
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- heat sink
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- pcb
- thin film
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Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
- F21V29/89—Metals
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
- F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a method of manufacturing a heat sink of an LED lighting apparatus, wherein a through hole having a diameter of 1.14 [mm] is drilled on an FR-4 PCB and then a plurality of via holes are formed in an oval shape around the through hole ; A second step of inserting the copper thin film into the epoxy layer of the FR-4 PCB in which the through hole is drilled to a thickness of 0.07 mm; A through hole in which a copper thin film is inserted into the epoxy layer is laminated with a composition of nano diamond powder having thermal conductivity and metal with silver paste and sintered (heat treated) at 100 [deg.] C for 5 hours to form a single heat conductor A third step of forming a first heat sink; A fourth step of cream-soldering the upper portion of the first heat sink, and then mounting the high-efficiency LED chip with the SMT; The RF microwave plasma processor is located between the lower copper film of the FR-4 PCB and the lower surface of the first heat sink on the horizontal line and the upper surface of the second heat sink, which is a large radiator, And a fifth step of firmly fixing the pin nano-wall-grown graphene substrate by the fastening means. The present invention provides a method for manufacturing a heat sink of an LED lighting fixture, It is possible to maximize the heat radiation effect and to extend the life of the LED lighting apparatus by conducting and diffusing it into a large radiator.
Description
BACKGROUND OF THE
Recently, paradigm in the field of lighting technology has been attracting attention for LED (Light-Emitting Diode) lighting which is eco-friendly, low consumption and excellent in electric efficiency.
Currently, LED chips for high-brightness lighting produce voltage (V F ) of 3.3 V (I F ) 700 [mA] at most 1 ~ 3 [W] The problem of heat dissipation for the high heat of the rear side of the LED chip is emerging as the biggest issue.
The heat generated from the LED chip is determined by the product of the current flowing through the device and its own forward voltage. The light output at 100 [%] at 25 [° C] is 60 [%] at 80 [ There is a tendency to decrease. Unlike other semiconductor devices, the power applied to the LED package is only 10 ~ 30 [%] that consumed by the light, so it is absolutely required to design and manufacture a heat sink for thermal management.
The basic structure of the LED package is largely composed of an LED chip, a package, a printed circuit board (PCB), a thermal interface material (TIM), and a heat sink. The LED package containing the chip is used as a basic unit element for constructing the LED system and mounted on the PCB by SMT (Surface Mount Technology). The PCB on which the LED chip is mounted is made of a large-sized aluminum material such as a radiator structure through a heat transfer material (or heat transfer adhesive) such as a thermal transfer tape, a thermal transfer grease and a heat-resistant sheet. And attached to the heat sink (see Fig. 1).
In this heat dissipation method, a heat transfer adhesive attaching a PCB and a large aluminum heat sink gradually cures when a high temperature occurs in the LED chip, thereby separating the copper thin film of the PCB. The separated copper film greatly increases the thermal resistance of the junction unit, which ultimately interferes with the heat dissipation of the entire LED package, thereby shortening the lifetime of the LED.
One of the most notable technologies for heat dissipation in LED packages is chip on board (COB, Chip On Board) package technology. When the chip is directly placed on an aluminum or plastic substrate with high thermal conductivity, the intermediate insulation layer is lost and the temperature can be lowered. The encapsulated encapsulant used to protect the LED chip and the lead frame also focuses on improving the heat dissipation function by controlling the silicon compounding ratio. The heat sink of the finished lighting product is made of aluminum alloy with aluminum content of 80 [%] so far because of workability, but magnesium material which is better heat dissipation than aluminum is used in addition to material development. The heat sink structure is designed to be easily heat-dissipated as much as possible. The heat sink is made of a via-hole to spread the aluminum and air contact surface, and the heat sink is turned into a fan shape to reduce the size and increase the heat radiation effect. A competitive advantage is that printed circuit boards and flexible copper clad laminate (FCCL), which are used as the main substrate of electronic components, improve the heat dissipation function. Recently, a flexible copper-clad laminate having a thermal conductivity of 2 [W / m · K] is used. However, in recent years, the thermal conductivity is 5 [W / m · K] ] Rapid ductile copper-clad laminates have also been developed. In addition, there is a lot of movement to find materials for interfacial materials with high heat dissipation function. Graphene, which is called new material of dream and can be removed from graphite with excellent electron mobility and high thermal conductivity as a single layer carbon film, is also seen as a next generation heat dissipation material. In addition, single-wall carbon nanotubes (SWCNTs) and multi-wall carbon nanotubes (MWCNTs) have been proposed as materials having good electron mobility and thermal conductivity in addition to graphene, The response speed can be increased 10 times or more and the heat generation can be reduced.
Meanwhile, in June 2012, Fujii Japan surveyed the world market for heat dissipation materials and materials, which are required due to high power output and light weight shortening of electronic / electric parts and semiconductors. In the year 2011, the market for heat dissipation members increased by 7.5% from the previous year to 305.1 billion yen. In particular, it is predicted that the heat dissipation board growth will lead to market expansion, and that by 2017, 38.2% . Aluminum base circuit boards, aluminum nitride base circuit boards, silicon nitride base circuit boards and other heat-dissipating boards have been affected by the increase in semiconductor production, and the market is expanding. Among them, the alumina base circuit board and the aluminum nitride base circuit board are expected to have a large market effect because the unit price is high and the demand is rapidly increasing. Future market trends of heat dissipation devices are as follows: heat dissipation sheet (heat dissipation member) using Graphene, aluminum nitride base circuit board (heat dissipation member), heat dissipation engineering plastic (heat dissipation material) Technology, and thermal coatings.
Accordingly, in the embodiment of the present invention, a heat sink having a heat conductor by a new mixed composition unlike the conventional heat transfer tape, heat transfer grease and heat dissipating sheet is proposed.
Accordingly, an object of the present invention is to improve the problems of the prior art, and more particularly, to a method of manufacturing a FR-4 PCB having a through hole of a FR-4 PCB and a heat conductor having a nano diamond powder and a metal mixed with a silver paste, A second heat sink, which is a large heat radiator formed by a heat sink, a graphene nano-wall grown by a RF plasma electric field processor, and a metal foil of an openable metal foam, Provided is a method for manufacturing a heat sink of an LED lighting fixture that maximizes the heat dissipation effect by conduction / diffusion to a large heat sink and extends the life of the LED lighting fixture.
According to an aspect of the present invention, there is provided a method of manufacturing a printed circuit board (PCB), comprising: drilling one through hole (120) having a diameter of 1.14 [mm] A first step of perforating a plurality of via-
According to another embodiment of the present invention, in the third step, the nano-diamond powder and the metal are thermally conductive to the through-hole in which the copper thin film is inserted into the epoxy layer, Is laminated and sintered (heat-treated) at 100 [deg.] C for 5 hours to form a
According to another embodiment of the present invention, in the third step, a nano-diamond powder and a metal, which have thermal conductivity to the through hole in which the copper thin film is inserted into the epoxy layer, and the conductive polymer Conductive Polymers) are stacked and sintered (heat-treated) at 100 [deg.] C for 5 hours to form a
According to another embodiment of the present invention, the graphene substrate sample is characterized in that any one of aluminum having thermal conductivity, conductive polymer, and copper is selected.
The method for manufacturing the heat sink of the LED lighting apparatus of the present invention has the following effects.
(1) From the manufacture of a heat sink in which a mixture composition having a high thermal conductivity is laminated and sintered, the heat generated from the high-efficiency LED chip can be rapidly transferred to and diffused from the large heat sink, thereby maximizing the heat radiation effect by natural convection.
(2) By forming a copper thin film on the epoxy layer of the FR-4 PCB through hole, the thermal resistance of the contact portion can be minimized by maintaining the adhesion and airtightness with the mixed composition of nanodiamond powder, metal, The city can be increased.
(3) When a secondary optical lens is used in an LED chip to increase the straightness and diffusibility of light when designing and installing a large LED lighting apparatus such as a street lamp or a security lamp by drilling a plurality of via holes on the FR-4 PCB, The heat of the space inside the secondary optical lens can be easily dissipated.
(4) By adopting the graphene nano-wall grown substrate, the high heat generated from the high efficiency LED chip can be quickly transferred to the edge of the LED package having the relative cooling load or the external heat sink It is possible to maximize the luminous efficiency of the LED package and prolong its service life.
(5) By adopting aluminum or metal foam as the large ventilation hole, it is possible to increase the heat dissipation effect and dramatically reduce the weight of the LED lighting fixture when it is applied to the ventilation openings of large LED lighting lamps such as street lamps, It is possible to greatly reduce the installation cost of the same street light.
FIG. 1 is a diagram illustrating an LED heat dissipation technique for the prior art; FIG.
2 is a view showing a structure of an FR-4 PCB for a method of manufacturing a heat sink of an LED lighting apparatus according to an embodiment of the present invention;
3 is a view showing the entire technical construction of a method of manufacturing a heat sink of an LED lighting apparatus according to an embodiment of the present invention
FIG. 4 is a schematic view illustrating a method of manufacturing a heat sink of an LED lighting fixture according to an embodiment of the present invention. FIG. 4 (a) shows a heat flow path of an FR-4 PCB conductive plate on which a plurality of LED chips are mounted, Diagram showing heat temperature distribution
5 is a view showing a state before (a) growth and (b) after growth of a graphene nano-wall grown on a graphene substrate according to a method for manufacturing a heat sink of an LED lighting apparatus according to a preferred embodiment of the present invention
6 is a graph showing the results of analyzing the surface shape of the graphene nano-wall according to the Raman spectrum of FIG. 5
7 is a graph showing a result of an experiment on the thermal conductivity of a graphene substrate for a method of manufacturing a heat sink of an LED lighting apparatus according to an embodiment of the present invention
8 is a view illustrating a heat sink manufacturing process of an LED package for a method of manufacturing a heat sink of an LED lighting apparatus according to an embodiment of the present invention
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals refer to like elements throughout. Although the same reference numerals are used in the different drawings, the same reference numerals are used throughout the drawings. The prior art should be interpreted by itself. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.
2 to 3, a method of manufacturing a heat sink of an LED lighting apparatus according to a preferred embodiment of the present invention includes a double-layer printed circuit board (FR-4 PCB 100), a first heat sink A
2 shows a structure of an FR-4 PCB for a method of manufacturing a heat sink of an LED lighting fixture according to a preferred embodiment of the present invention.
The double-layer printed circuit board (FR-4 PCB 100) is a printed circuit board on which an LED chip and an electric circuit network (not shown) for driving the LED chip are mounted. One or
Here, a printed circuit board (PCB) such as the FR-4 PCB 100 can reduce the influence of the thermal resistance value from the entire junction to the periphery to less than 10 [%]. In the middle of the PCB, an epoxy layer (101) with a thickness of 3.3 [oz] and an upper copper thin film (102) and a copper thin film with a thickness of 2 [oz] ) Is inserted into the epoxy layer. In the case of the FR-4
Therefore, in the embodiment of the present invention, a high-efficiency thermally conductive test board (FR-4 PCB) is used to reduce the thermal resistance of the LED package placed on the PCB, and a through
In the double-layer printed circuit board (FR-4 PCB) 100 according to the embodiment of the present invention, when the secondary
Here, in the case of using the secondary
In addition, the through-
Referring to FIGS. 2 and 8, the through
In other words, when a mixed composition of diamond powder, metal, polymer, or the like having a very high thermal conductivity is laminated on the through
3 shows the overall technical construction of an LED lighting fixture for a method of manufacturing a heat sink of an LED lighting fixture according to a preferred embodiment of the present invention.
3, the
Here, the nano diamond powder is a mixed composition of a
Therefore, in the embodiment of the present invention, in order to conduct the high heat generated in the heat dissipation hole of the
3, the metal is a mixed composition of a first heat sink having a heat conductor according to an embodiment of the present invention. The metal has high electric conductivity and thermal conductivity, It is a crystalline solid material with high ductility and high reflectivity. In most cases, it has a relatively simple crystal structure, so the arrangement of atoms is dense and highly symmetrical. In particular, since the number of outermost electrons of a metal atom is less than half of the maximum number, the metal does not easily form a compound. However, it usually binds more easily with non-metals (eg, oxygen and sulfur), which usually have more than half of the maximum valence electrons. The chemical reactivity of metals is greatly different. Lithium (Li), potassium, and radium (Ra) are the most reactive metals, and gold, silver, palladium (Pd) and platinum are low reactivity. The non-transition metal of the periodic table has high electrical conductivity and thermal conductivity due to free electrons. According to the theory of free electrons, each atom in these metals loses atomic electrons, and the resulting free electrons move as a bundle between the metal atoms, turning the metal into a conductive material.
Therefore, in the embodiment of the present invention, the high heat generated from the heat dissipation port of the
The
Here, the heat treatment at 100 [deg.] C for 5 hours is performed by laminating and sintering the composition obtained by mixing the nanodiamond powder and the metal with silver paste to obtain a completely new heat conductor having a function of a heat sink having a very low heat resistance For manufacturing.
4 (a) shows the heat flow path of the FR-4 PCB conductive plate on which a plurality of LED chips are mounted, and FIG. 4 (b) shows the heat temperature distribution taken by the thermal imaging camera.
Referring to FIG. 4, the heat generated from the high-efficiency LED chip mounted on the FR-4 PCB is mostly concentrated at the center, and the heat flow is becoming lower toward the edge. Nevertheless, the cold plate is installed at the outermost side of the
Accordingly, in the embodiment of the present invention, in order to conduct and diffuse the heat temperature distribution concentrated at the center of the FR-4 PCB on which a plurality of LED chips are mounted to the edge having a relative cooling load, the thermal conductivity and the heat- The use of a graphene substrate through graphene nano-wall growth, which is superior to the conventional graphene nano-wall growth, is featured in solving the conventional problem of installing a cold plate.
3, in a
Here, the graphene has a two-dimensional structure in which a carbon atom is tightly enclosed by a hexagonal lattice point of a honeycomb shape, and has electrical conduction characteristics, thermal conductivity, and photoconductive properties that are very different from those of conventional three-dimensional materials . Graphene is a carbon isotope of about 0.35 [nm] thickness composed of sp2 (pia structure) hybrid bonds. Its tensile strength is more than 200 times stronger than steel, its electron mobility is more than 1,000 times faster than silicon (~ 20,000 [ cm2 / Vs])) and the thermal conductivity is 10 times higher than that of copper.
The
The
FIG. 5 is a graph showing the relationship between (a) growth of a graphene nano-wall grown on a
In order to grow the Graphene Nano-Wall, a substrate sample was prepared by repeatedly polishing an aluminum (Al) or copper (Cu) plate having a constant size and thoroughly cleaning it. A Graphene Nano-Wall was grown on both sides of the substrate by an RF plasma electric field processor, and RF power having a frequency of 13.56 [MHz] was used. Under parallel resonance conditions of L and C, (Outer diameter: 50 [mm]) by the flow of the tank current flowing in the process chamber.
The inside of the quartz tube is pressurized by a rotary pump at a constant pressure
FIG. 6 shows a result of Raman spectrum analysis of the surface shape of the graphene nano-wall grown on the substrate sample described above with reference to FIG.
It can be seen from the graph that there is a very high 2D peak corresponding to graphene. Graphene can be judged by the presence or absence of a 2D peak, and when the D peak is as small as possible and clearly separated from the G peak, the crystallinity of graphene is high. It can be seen that the D peak and the G peak are clearly separated, and the 2D peak is graphene which is highly crystalline since it is almost similar to the intensity of the G peak.
FIG. 7 is a graph illustrating the thermal conductivity of a graphene substrate at an ambient temperature of 26 to 27 [deg.] C for a method of manufacturing a heat sink of an LED lighting apparatus according to a preferred embodiment of the present invention.
The
On the graph, it can be seen that the edge temperature is the highest in the vicinity of 150 [sec] after the lapse of a certain period of time, and then decreases in the order of the middle portion and the portion immediately below the LED. The edge is 125.5 [℃] at the maximum temperature, 121.5 [℃] at the middle part, and 107.5 [℃] at the lower part, and the temperature difference is about 18 [℃] at the edge. This means that the temperature at the edge of the substrate is raised to the highest level due to diffusion heat of the high-efficiency LED chip by the graphene nano-wire to the side portion.
Accordingly, when the graphene nano-wall grown
According to the embodiment of the present invention, instead of the
Referring to FIG. 3 again, the
Here, the metal foam is a porous metal having a large number of bubbles in a metal material, and is classified into an open cell type (OCT) and a closed cell type (CCT). In the case of the alveolar-type foamed metal, bubbles inside the metal are not connected but exist independently. In the case of the open-celled foamed metal, the pores inside the metal material are connected to each other, The applications are so incomparable. That is, the foamed metal foam is a dodecahedron structure having a structure similar to a bone of a human body in terms of shape, and has a stable structure that is not inferior to a hexagonal structure such as an isotropic anisotropic honeycomb structure have. In addition to this structural stability, it has a surface area that can not be implemented mechanically. Applications include aircraft, automobiles, power plants, heat exchangers for power devices, heat sinks for semiconductors, silencers for large plants, catalysts for chemical plants, aircraft requiring high strength and light weight, and structural materials for the space industry , A shock absorber, a fuel cell (fuel cell) and a filter.
Therefore, in the embodiment of the present invention, it is possible to greatly reduce the installation cost of the street lamp such as the support pipe supporting the high weight by greatly reducing the weight of the LED lighting apparatus and enhancing the heat dissipation effect when the apparatus is used as a heat radiator such as a large- Feature.
Hereinafter, with reference to FIG. 8, a detailed process of a method for manufacturing a heat sink of an LED lighting apparatus according to an embodiment of the present invention will be described in detail.
First, a through
Here, the through
Next, a second step of inserting the copper foil into the
In addition, a composition obtained by mixing Nano-diamond powder and metal with silver paste into a through hole having a copper thin film inserted into the epoxy layer is highly laminated, ] For 5 hours to form a
In another embodiment, the third step is a step of mixing a nano-diamond powder having thermal conductivity into a through-hole in which a copper thin film is inserted into the epoxy layer and a metal with methanol, The composition is laminated and sintered (heat-treated) at 100 [deg.] C for 5 hours to form a
In the third step, the nano-diamond powder and the metal may be mixed with the conductive polymer in the through hole having the copper foil inserted into the epoxy layer, Are laminated and sintered (heat-treated) at 100 [deg.] C for 5 hours to form a
Next, a fourth step of cream-soldering the upper portion of the
Finally, the RF plasma
The graphene nano-wall growth by the RF plasma electric field processor will be described later. By growing graphene nano-walls on both sides of the substrate of the substrate, the high heat conducted from the first heat sink, which is cream- The heat dissipation characteristics of the LED package can be greatly improved by conducting and diffusing to the edge of the
Also, the sample of the graphene substrate according to the heat sink manufacturing process of the present invention includes one selected from aluminum having thermal conductivity, conductive polymer, and copper.
The foregoing description is merely illustrative of the technical idea of the present invention and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the scope of the present invention but to limit the scope of the technical idea of the present invention. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.
100: Double Layer Printed Circuit Board (FR-4 PCB)
101: epoxy layer 102: upper copper thin film
103: lower copper thin film 104: copper thin film (diameter 0.07 mm)
110: LED chip 120: Through hole
130: via hole 140: secondary optical lens
200: first heat sink
300: Graphene substrate
400: second heat sink
Claims (4)
A second step of inserting the copper thin film into the epoxy layer 101 of the FR-4 PCB 100 having the through hole drilled to a thickness of 0.07 mm;
A composition obtained by mixing Nano-diamond powder having thermal conductivity and metal with Ag paste in a through hole in which a copper thin film is inserted into the epoxy layer is laminated, (Heat treatment) to form a first heat sink 200 having one heat conductor;
A fourth step of performing cream soldering on the first heat sink and then mounting the high efficiency LED chip 110 with SMT (Surface Mount Technology);
The RF plasma electric field processor is disposed between the lower copper film 103 of the FR-4 PCB and the lower surface of the first heat sink placed on the horizontal line and the upper surface of the second heat sink 400, And a fifth step of closely fixing and fixing the graphene nano-wall grown graphene substrate (300) on both sides with fastening means.
In the third step, a composition obtained by mixing Nano-diamond powder having thermal conductivity into a through-hole in which a copper thin film is inserted into the epoxy layer, and metal is mixed with methanol, (Heat treatment) is performed for 5 hours at a temperature of 200 ° C to form a first heat sink 200 having one heat conductor.
In the third step, a composition obtained by mixing Nano-diamond powder having thermal conductivity into a through hole in which a copper thin film is inserted in the epoxy layer and conductive polymer is laminated Wherein the first heat sink (200) having one heat conductor is formed by sintering (heat treating) at 100 [deg.] C for 5 hours.
Wherein the graphene substrate sample is selected from aluminum having a thermal conductivity, a conductive polymer, and copper.
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| US12002918B2 (en) | 2021-01-15 | 2024-06-04 | Samsung Electronics Co., Ltd. | Display module and display apparatus having the same |
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| JP2012229317A (en) | 2011-04-26 | 2012-11-22 | Nitto Denko Corp | Transparent thermoconductive composition |
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| US12002918B2 (en) | 2021-01-15 | 2024-06-04 | Samsung Electronics Co., Ltd. | Display module and display apparatus having the same |
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