KR101716955B1 - Heat Radiating Apparatus of the LED Lighting Fixture using a Polymers - Google Patents

Heat Radiating Apparatus of the LED Lighting Fixture using a Polymers Download PDF

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KR101716955B1
KR101716955B1 KR1020150067398A KR20150067398A KR101716955B1 KR 101716955 B1 KR101716955 B1 KR 101716955B1 KR 1020150067398 A KR1020150067398 A KR 1020150067398A KR 20150067398 A KR20150067398 A KR 20150067398A KR 101716955 B1 KR101716955 B1 KR 101716955B1
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South Korea
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heat
heat sink
led
led chip
led lighting
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KR1020150067398A
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Korean (ko)
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KR20160134028A (en
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최훈
장희철
박선미
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최훈
금용전기 주식회사
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90—Methods of manufacture
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
    • F21V29/004—
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
    • F21V29/87—Organic material, e.g. filled polymer composites; Thermo-conductive additives or coatings therefor
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/85—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems characterised by the material
    • F21V29/89—Metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a heat dissipating device for an LED lighting apparatus using a polymer, wherein the at least one LED chip is constituted by a series circuit and is mounted by SMT, and the heat dissipating device A double layer printed circuit board having a through hole for mounting the first heat sink; A first heat sink having a through hole in the double-layer printed circuit board having a thermal conductor of a composition of nano diamond powder and metal mixed with a conductive polymer; The upper portion of the first heat sink is in contact with the LED chip heat dissipation port and the lower portion of the first heat sink is completely attached to the graphene substrate that conducts and diffuses the high heat conducted from the first heat sink to the second heat sink; And a second heat sink, which is an aluminum heat radiator having a radiator structure for cooling the conductive and diffused heat from the graphene substrate by a natural convection method, is constructed so that the high heat generated from the high efficiency LED chip can be quickly conducted to the radiator Thereby maximizing the heat radiating effect and extending the service life.

Description

TECHNICAL FIELD [0001] The present invention relates to an LED lighting fixture using a polymer,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a heat dissipation device for an LED lighting device, and more particularly, to a heat dissipation device for an LED lighting device, in which a heat sink having a heat- And more particularly, to a heat dissipation device for an LED lighting apparatus using a polymer that conducts and diffuses high heat generated from a heat dissipation port to an aluminum heat dissipating device that cools the heat by natural convection.

Recently, paradigm in the field of lighting technology has been attracting attention for LED (Light-Emitting Diode) lighting which is eco-friendly, low consumption and excellent in electric efficiency.

Currently, LED chips for high-brightness lighting produce voltage (V F ) of 3.3 V (I F ) 700 [mA] at most 1 ~ 3 [W] The problem of heat dissipation for the high heat of the rear side of the LED chip is emerging as the biggest issue.

The heat generated from the LED chip is determined by the product of the current flowing through the device and its own forward voltage. The light output at 100 [%] at 25 [° C] is 60 [%] at 80 [ There is a tendency to decrease. Unlike other semiconductor devices, the power applied to the LED package is only 10 ~ 30 [%] that consumed by the light, so it is absolutely required to design and manufacture a heat sink for thermal management.

The basic structure of the LED package is largely composed of an LED chip, a package, a printed circuit board (PCB), a thermal interface material (TIM), and a heat sink. The LED package containing the chip is used as a basic unit element for constructing the LED system and mounted on the PCB by SMT (Surface Mount Technology). The PCB on which the LED chip is mounted is made of aluminum material which is a radiator structure through a heat transfer material (or heat transfer adhesive) such as a thermal transfer tape, a thermal transfer grease and a heat-resistant sheet. (See Fig. 1).

In this heat dissipation method, when a high temperature occurs in an LED chip, a heat transfer adhesive attaching a PCB and an aluminum heat sink gradually cures to separate the copper thin film of the PCB. The separated copper film greatly increases the thermal resistance of the junction unit, which ultimately interferes with the heat dissipation of the entire LED package, thereby shortening the lifetime of the LED.

One of the most notable technologies for heat dissipation in LED packages is chip on board (COB, Chip On Board) package technology. When the chip is directly placed on an aluminum or plastic substrate with high thermal conductivity, the intermediate insulation layer is lost and the temperature can be lowered. The encapsulated encapsulant used to protect the LED chip and the lead frame also focuses on improving the heat dissipation function by controlling the silicon compounding ratio. The heat sink of the finished lighting product is made of aluminum alloy with aluminum content of 80 [%] so far because of workability, but magnesium material which is better heat dissipation than aluminum is used in addition to material development. The heat sink structure is designed to be easily heat-dissipated as much as possible. The heat sink is made of a via-hole to spread the aluminum and air contact surface, and the heat sink is turned into a fan shape to reduce the size and increase the heat radiation effect. A competitive advantage is that printed circuit boards and flexible copper clad laminate (FCCL), which are used as the main substrate of electronic components, improve the heat dissipation function. Recently, a flexible copper-clad laminate having a thermal conductivity of 2 [W / m · K] is used. However, in recent years, the thermal conductivity is 5 [W / m · K] ] Rapid ductile copper-clad laminates have also been developed. In addition, there is a lot of movement to find materials for interfacial materials with high heat dissipation function. Graphene, which is called new material of dream and can be removed from graphite with excellent electron mobility and high thermal conductivity as a single layer carbon film, is also seen as a next generation heat dissipation material. In addition, single-wall carbon nanotubes (SWCNTs) and multi-wall carbon nanotubes (MWCNTs) have been proposed as materials having good electron mobility and thermal conductivity in addition to graphene, The response speed can be increased 10 times or more and the heat generation can be reduced.

Meanwhile, in June 2012, Fujii Japan surveyed the world market for heat dissipation materials and materials, which are required due to high power output and light weight shortening of electronic / electric parts and semiconductors. In the year 2011, the market for heat dissipation members increased by 7.5% from the previous year to 305.1 billion yen. In particular, it is predicted that the heat dissipation board growth will lead to market expansion, and that by 2017, 38.2% . Aluminum base circuit boards, aluminum nitride base circuit boards, silicon nitride base circuit boards and other heat-dissipating boards have been affected by the increase in semiconductor production, and the market is expanding. Among them, the alumina base circuit board and the aluminum nitride base circuit board are expected to have a large market effect because the unit price is high and the demand is rapidly increasing. Future market trends of heat dissipation devices are as follows: heat dissipation sheet (heat dissipation member) using Graphene, aluminum nitride base circuit board (heat dissipation member), heat dissipation engineering plastic (heat dissipation material) Technology, and thermal coatings.

Accordingly, in the embodiment of the present invention, a heat sink having a heat conductor by a new mixed composition unlike the conventional heat transfer tape, heat transfer grease and heat dissipating sheet is proposed.

SUMMARY OF THE INVENTION It is therefore an object of the present invention to solve the problems of the prior art, and more particularly, to provide a high-efficiency LED chip constituting a series circuit, and a method of manufacturing a Nano Diamond Powder and a metal A first heat sink having a thermal conductor in which metal particles are mixed with polymers and a graphene substrate in which a graphene nano-wall is grown by an RF plasma electric field processor, A second heat sink (400), which is a radiator structure formed by molding a metal foam made of an aluminum material into a radiator structure, can quickly transfer the heat generated from the LED chip to the radiator and spread To provide a heat dissipating device for an LED lighting apparatus using a polymer that maximizes heat dissipation effect and prolongs its service life.

According to an aspect of the present invention, there is provided a heat dissipation device for an LED lighting apparatus, wherein the heat dissipation device comprises at least one LED chip (110) formed of a series circuit and mounted by SMT (Surface Mount Technology) (FR) having a through-hole (120) for mounting a first heat sink for conducting high heat generated in a heat dissipation hole of the LED chip to a radiator and a plurality of via holes (130) -4 PCB, 100); A first heat sink having a thermal conductor of a composition in which Nano Diamond Powder and Metal are mixed with conductive polymers is formed in a through hole of the double layer printed circuit board, , 200); The upper part of the first heat sink is in contact with the LED chip heat dissipating unit. The lower part of the first heat sink is made of aluminum (Al) or copper (Cu) flat plate was repeatedly polished and cleaned. Either of them was selected to generate a plasma inside the quartz tube by the tank current flowing in the coil and the capacitor under the condition of the frequency 13.5 MHz power supply and LC parallel resonance, A metal foil which is in contact with a graphene substrate 300 which is made of aluminum and which is cooled by a natural convection method and which is conducted and diffused from the graphene substrate is formed into a radiator structure And a second heat sink (400), which is a heat dissipating device, manufactured by the manufacturing method of the present invention.

According to another embodiment of the present invention, the first heat sink 200 may be formed by mixing 4% by weight of Nano Diamond Powder and 1% by weight of Metal with Conductive Polymers, And is heat-treated at 100 [deg.] C for 5 hours.

According to another embodiment of the present invention, the thermal resistance measuring region of the heat dissipating device of the LED lighting apparatus using the polymer may include a first heat sink 200 having the heat conductor and the graphene substrate 300, And the thermal resistance value is 9.10 [K / W] at an ambient temperature of 25 [deg.] C.

The heat dissipating device of the LED lighting apparatus using the polymer of the present invention has the following effects.

(1) The high heat generated from the LED chip heat dissipation port can be quickly conducted and diffused through the heat sink through the heat sink sintered with the highly thermally conductive composite composition, thereby maximizing the heat radiation effect by natural convection.

(2) By forming a copper thin film on the epoxy layer of the FR-4 PCB through hole, the thermal resistance value of the contact portion can be minimized by maintaining the adhesion and airtightness with the mixed composition of diamond powder, metal, The city can be increased.

(3) When a secondary optical lens is used in an LED chip to increase the straightness and diffusibility of light when designing and installing a large LED lighting apparatus such as a street lamp or a security lamp by drilling a plurality of via holes on the FR-4 PCB, The heat of the space inside the secondary optical lens can be easily dissipated.

(4) By adopting the graphene nano-wall grown substrate, the high heat generated from the high efficiency LED chip can be quickly transferred to the edge of the LED package having the relative cooling load or the external heat sink It is possible to maximize the luminous efficiency of the LED package and prolong its service life.

(5) By adopting aluminum or metal foam for ventilation openings, it is possible to improve the heat radiation effect and greatly reduce the weight of the LED lighting fixture when supporting the large weight of LED lighting fixtures such as street lamps. There is an effect that the installation cost of the street light can be greatly reduced.

FIG. 1 is a diagram illustrating an LED heat dissipation technique for the prior art; FIG.
2 is a view showing a structure of an FR-4 PCB for a heat dissipating device of an LED lighting apparatus using a polymer according to an embodiment of the present invention;
3 is a view illustrating a heat sink manufacturing process of an LED package for a heat dissipating device of an LED lighting apparatus using a polymer according to an embodiment of the present invention.
4 is a view showing the entire structure of an LED package for a heat dissipating device of an LED lighting apparatus using a polymer according to an embodiment of the present invention
FIG. 5 is a schematic view of a heat dissipating device of an LED lighting apparatus using a polymer according to an embodiment of the present invention. FIG. 5 (a) shows a heat flow path of an FR-4 PCB conductive plate on which a plurality of LED chips are mounted, Drawings showing one heat temperature distribution
FIG. 6 is a graph showing the results of (a) growth of (b) growth of graphene nano-wall grown on a graphene substrate for a heat dissipating device of a LED lighting apparatus using a polymer according to a preferred embodiment of the present invention, Drawing showing later figure
7 is a graph showing the results of analyzing the surface morphology of the graphene nano-wall according to the Raman spectrum of FIG. 6
8 is a graph showing a result of an experiment of thermal conductivity using a graphene substrate at an ambient temperature of 26 to 27 [deg.] C for a heat dissipating device of an LED lighting apparatus using a polymer according to an embodiment of the present invention
9 is a graph showing the sensitivity (K-factor) of a measuring instrument for a heat dissipating device of an LED lighting apparatus using a polymer according to an embodiment of the present invention
10 is a graph showing a result of temperature measurement of a junction temperature of an LED package for a heat dissipating device of an LED lighting apparatus using a polymer according to an embodiment of the present invention
11 is a graph showing the thermal resistance of an LED package according to ambient temperature and humidity for a heat dissipating device of an LED lighting apparatus using a polymer according to an embodiment of the present invention

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals refer to like elements throughout. Although the same reference numerals are used in the different drawings, the same reference numerals are used throughout the drawings. The prior art should be interpreted by itself. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

2 to 4, a technical structure of a heat dissipating device of a LED lighting apparatus using a polymer according to a preferred embodiment of the present invention includes a double layer printed circuit board (FR-4 PCB 100), a first heat sink A heat sink 200, a graphene substrate 300, and a second heat sink 400.

FIG. 2 illustrates a structure of an FR-4 PCB for a heat dissipating device of a LED lighting apparatus using a polymer according to a preferred embodiment of the present invention.

The double-layer printed circuit board (FR-4 PCB 100) is a printed circuit board on which an LED chip and an electric circuit network (not shown) for driving the LED chip are mounted. One or more LED chips 110 are formed of a parallel circuit Through-holes (through-holes) for mounting the first heat sink 200 having a thermal conductor, which can be mounted by SMT (Surface Mount Technology) and conduct heat from the heat dissipating port of the LED chip to the heat sink, hole 120 is a perforated double-layer printed circuit board.

Here, a printed circuit board (PCB) such as the FR-4 PCB 100 can reduce the influence of the thermal resistance value from the entire junction to the periphery to less than 10 [%]. In the middle of the PCB, an epoxy layer (101) with a thickness of 3.3 [oz] and an upper copper thin film (102) and a copper thin film with a thickness of 2 [oz] ) Is inserted into the epoxy layer. In the case of the FR-4 PCB 100 used for LED lighting, the LED chip 110 is mainly mounted on the upper copper thin film 102 and the electric network is printed, and the lower copper thin film 103 has a generally radiator structure And contacts the second heat sink 400, which is a radiator of an aluminum material, to cool the high heat generated from the heat dissipation holes of the LED chip 110 in a natural convection manner. In order to reduce the thermal resistance of an LED package placed on a PCB, it is necessary to increase the area of the first PCB, , The second is to increase the area of the copper on the PCB, the third to laminate the copper in the PCB, or the PCB using the secondary optical lens to secure the heat discharge path through the via hole. The most basic PCB specification is a low-efficiency thermally conductive test board (single-layer) and a high-efficiency thermally conductive test board (double layer FR-4 PCB with power panel and ground panel).

Therefore, in the embodiment of the present invention, a high-efficiency thermally conductive test board (FR-4 PCB) is used to reduce the thermal resistance of the LED package placed on the PCB, and a through hole 120 is formed on the FR- And the first heat sink 200 having the heat conductor is mounted by inserting a copper thin film having a thickness of 0.07 mm into the epoxy layer 101 of the perforated FR-4 PCB 100.

In the double-layer printed circuit board (FR-4 PCB) 100 according to the embodiment of the present invention, when the secondary optical lens 140 is mounted on the LED chip 110, And a plurality of vias 130, which are vent holes for radiating heat to the outside, are punched.

Here, in the case of using the secondary optical lens 140 in the LED chip to increase the straightness and diffusibility of light when designing a large-sized LED lighting apparatus such as a street lamp or a security lamp, To dissipate heat.

In addition, the through-hole 120 according to the embodiment of the present invention is characterized in that when the mixed material having the thermally conductive material laminated on the through hole is heat-treated, the through- 0.0 > (Copper Thin Film) < / RTI > 104 to the epoxy layer 101 of the photoresist 120 (FIG.

2 and 3, the through hole 120 is a through-hole through which a thermal conductor for transferring the high heat generated from the LED chip 110 to the heat sink is laminated , And the FR-4 PCB 100 is drilled to 1.14 mm. Then, a copper thin film 104 having a thickness of 0.07 mm is inserted or formed in the epoxy layer 101 of the perforated FR-4 PCB 100 so that the mixed composition of the laminated thermoconductor maintains adhesion and airtightness with the copper thin film do.

In other words, when a mixed composition of diamond powder, metal, polymer, or the like having a very high thermal conductivity is laminated on the through hole 120 and sintered at 100 [deg.] C for 5 hours, The thin film and the mixed composition can be easily laminated with good adhesion and airtightness so as to minimize the contact resistance of the first heat sink 200 after sintering to improve the thermal conductivity.

Here, FIG. 3 illustrates a heat sink manufacturing process of an LED package for a heat dissipating device of a LED lighting apparatus using a polymer according to a preferred embodiment of the present invention.

First, a through hole 120 having a diameter of 1.14 [mm] is drilled on the FR-4 PCB 100, and then a plurality of vias are formed in an oval shape around the through hole, 130).

Here, the through hole 120 is a hole for laminating a mixed composition having a thermal conductor. When the secondary optical lens is mounted on the LED chip 110, .

Next, the copper thin film is inserted into the epoxy layer 101 of the FR-4 PCB 100 in which the through hole 120 is drilled to a thickness of 0.07 mm.

In addition, a composition obtained by mixing Nano-diamond powder and metal with conductive polymers, which has a very high thermal conductivity, is laminated on the through hole having the copper thin film inserted into the epoxy layer, (Heat treatment) for 5 hours to form a first heat sink 200 having one heat conductor.

Here, the first heat sink may be formed by mixing a nano-diamond powder having thermal conductivity into a through hole in which a copper thin film is inserted into the epoxy layer and a metal by Ag paste And then sintered (heat-treated) at 100 [deg.] C for 5 hours to form a single heat conductor.

The first heat sink may be formed by stacking a composition in which a nano-diamond powder having thermal conductivity and a metal are mixed with methanol in a through hole having a copper thin film inserted into the epoxy layer, And then sintered (heat-treated) at 100 [deg.] C for 5 hours to form a single heat conductor.

In addition, after the cream soldering is performed on the first heat sink 200, the high efficiency LED chip 110 is mounted by SMT (Surface Mount Technology).

And the lower copper film 103 of the FR-4 PCB is positioned between the lower surface of the first heat sink placed on the horizontal plane and the upper surface of the second heat sink 400 serving as the radiator, The graphene substrate 300 on which the graphene nano-wall is grown is tightly fixed to the both sides of the sample of the substrate by the fastening means.

Here, the graphene nano-wall growth by the RF plasma electric field processor will be described later. By growing the graphene nano-wire on both sides of the substrate of the substrate, the heat transferred from the first heat sink, which is cream- The heat dissipation characteristics of the LED package can be greatly improved by conducting and spreading to the edge of the second heat sink 400. [

In addition, the sample of the substrate according to the heat sink manufacturing process of the present invention includes one selected from aluminum, conductive polymer, and copper having thermal conductivity.

FIG. 4 is a view showing the entire structure of an LED package for a heat dissipating device of a LED lighting apparatus using a polymer according to a preferred embodiment of the present invention.

Referring to FIG. 4, the first heat sink 200 is a thermal conductor for conducting high heat dissipated from a heat dissipation hole of the LED chip to a radiator, and the FR- And has a thermal conductor of a composition obtained by mixing Nano Diamond Powder and Metal with conductive polymers in a through hole 120 of the through hole 120 and performing heat treatment.

Here, the nano diamond powder is a mixed composition of a first heat sink 200 having a heat conductor according to an embodiment of the present invention, and has a nano diamond purity of 99%. Therefore, And is excellent in reactivity and bonding strength with In addition, since the average particle size of the nanodiamond solution is 20 nm and can be realized to a minimum of 5 nm, the nanodiamond powder and the solution (analogous compound) as well as the nanodiamond powder can be made, Respectively. In particular, nanodiamonds have a very high thermal conductivity and hardness (surface hardness) of 10, which is the hardest among the minerals on earth. Electric conductivity is lower than that of carbon nanotube (CNT) and graphene. However, since it has a characteristic of harmless to the human body by emitting its own light when energy is applied from the outside, it attracts attention as a next generation heat dissipation material such as LED lighting and high performance engine Receive.

Therefore, in the embodiment of the present invention, in order to conduct the high heat generated from the heat dissipation hole of the LED chip 110 to the second heat sink 400, which is an aluminum heat dissipating device outside the LED package, Metal), it can serve as a catalyst for eliminating the heat insulating property such as pores and air bubbles between the mixed materials when mixing the composition and improving the thermal conductivity, thereby lowering the thermal resistance of the LED package and improving the heat radiation characteristics.

The metal is a mixed composition of a first heat sink having a heat conductor according to an embodiment of the present invention and has a high electrical conductivity and a high thermal conductivity and is excellent in malleability and ductility, Is a crystalline solid material with a large and high reflectivity. In most cases, it has a relatively simple crystal structure, so the arrangement of atoms is dense and highly symmetrical. In particular, since the number of outermost electrons of a metal atom is less than half of the maximum number, the metal does not easily form a compound. However, it usually binds more easily with non-metals (eg, oxygen and sulfur), which usually have more than half of the maximum valence electrons. The chemical reactivity of metals is greatly different. Lithium (Li), potassium, and radium (Ra) are the most reactive metals, and gold, silver, palladium (Pd) and platinum are low reactivity. The non-transition metal of the periodic table has high electrical conductivity and thermal conductivity due to free electrons. According to the theory of free electrons, each atom in these metals loses atomic electrons, and the resulting free electrons move as a bundle between the metal atoms, turning the metal into a conductive material.

Therefore, in the embodiment of the present invention, the high heat generated from the heat dissipation port of the LED chip 110 is used as a mixed composition with the nano diamond powder to conduct the heat to the second heat sink 400, which is an aluminum heat dissipating device outside the LED package. Such a metal serves as a catalyst for eliminating heat insulation such as porosity or air bubbles when combined with other mixed compositions and further enhancing thermal conductivity, thereby lowering the thermal resistance of the LED package and enhancing heat radiation characteristics.

The first heat sink 200 according to the embodiment of the present invention may be formed by mixing 4% by weight of Nano Diamond Powder and 1% by weight of Metal with Conductive Polymers, And a heat conduction heat treatment at 100 [deg.] C for 5 hours.

Here, the heat treatment at 100 [deg.] C for 5 hours is performed by laminating and sintering a composition in which a nanodiamond powder and a metal are mixed with a conductive polymer so that a completely new heat conductor having a function of a heat sink having a very low heat resistance For manufacturing.

5 (a) and 5 (b) show the heat flow path of the FR-4 PCB conductive plate on which a plurality of LED chips are mounted and the heat temperature distribution photographed by the thermal imaging camera.

5 (a) and 5 (b), heat generated from the LED chip mounted on the FR-4 PCB is concentrated in the center, and a lower heat flow is seen toward the edge. Nevertheless, the cold plate is installed at the outermost side of the second heat sink 400 as a radiator. This is because the structural design problem of the LED package is that the cooling load for supplying the fan or cooling water can not be installed at the center of the second heat sink.

Therefore, in the embodiment of the present invention, in order to conduct and diffuse the heat temperature distribution concentrated at the center of the FR-4 PCB having a plurality of LED chips mounted thereon to the edge having a relative cooling load, thermal conduction and thermal diffusivity are better than diamonds And is solved through the substrate on which the fin material is grown.

Referring to FIGS. 3, 4 and 6 to 8, a graphene substrate 300 according to an embodiment of the present invention includes a first heat sink 200 and a second heat sink 200, Diffusion and conduction to the second heat sink 400, which is a heat dissipating device of aluminum material, which cools the heated high temperature by the natural convection method through the graphene substrate completely in contact with the lower portion of the first heat sink It plays a role.

Here, the graphene has a two-dimensional structure in which a carbon atom is tightly enclosed by a hexagonal lattice point of a honeycomb shape, and has electrical conduction characteristics, thermal conductivity, and photoconductive properties that are very different from those of conventional three-dimensional materials . Graphene is a carbon isotope of about 0.35 [nm] thickness composed of sp2 (pia structure) hybrid bonds. Its tensile strength is more than 200 times stronger than steel, its electron mobility is more than 1,000 times faster than silicon (~ 20,000 [ cm2 / Vs])) and the thermal conductivity is 10 times higher than that of copper.

The graphene substrate 300 according to the embodiment of the present invention may be selected from a substrate sample having an aluminum (Al) or copper (Cu) flat plate having a constant size, Processing, and cleaning, graphene nano-walls are grown by RF plasma electric field processors on the upper and lower surfaces of the substrate samples.

The graphene substrate 300 according to the embodiment of the present invention is formed by stacking the lower copper thin film 103 of the FR-4 PCB 100 on which the first heat sink 200 is stacked, 400 by fastening means.

FIG. 6 is a graph showing the relationship between growth (a) and growth (a) of graphene nano-wall grown on a graphene substrate 300 for a heat dissipating device of an LED lighting apparatus using a polymer according to a preferred embodiment of the present invention. (B).

In order to grow the Graphene Nano-Wall, a substrate sample was prepared by repeatedly polishing an aluminum (Al) or copper (Cu) plate having a constant size and thoroughly cleaning it. A Graphene Nano-Wall was grown on both sides of the substrate by an RF plasma electric field processor, and RF power having a frequency of 13.56 [MHz] was used. Under parallel resonance conditions of L and C, (Outer diameter: 50 [mm]) by the flow of the tank current flowing in the process chamber.

The inside of the quartz tube is pressurized by a rotary pump at a constant pressure

Figure 112015046346654-pat00001
The main valve was closed by injecting a predetermined gas, and the pressure was maintained at a constant pressure by using a by-pass valve. At this time, the flow rate of the hydrogen gas was always fixed at 20 [sccm], and the methane was subjected to spectral analysis while controlling the flow rate to 80 to 100 [sccm]. The pressure inside the quartz tube was measured using Pirani-gauge and the temperature was measured with a pyrometer. The surface morphology of the particles was measured with a scanning electron microscope (SEM, Scanning Electron Microscopy, CX-100SM) Respectively.

FIG. 7 shows a result of Raman spectrum analysis of the surface shape of the graphene nano-wall grown on the substrate sample described above with reference to FIG.

It can be seen from the graph that there is a very high 2D peak corresponding to graphene. Graphene can be judged by the presence or absence of a 2D peak, and when the D peak is as small as possible and clearly separated from the G peak, the crystallinity of graphene is high. It can be seen that the D peak and the G peak are clearly separated, and the 2D peak is graphene which is highly crystalline since it is almost similar to the intensity of the G peak.

8 is a graph illustrating the thermal conductivity of a heat dissipating device of a LED lighting apparatus using a polymer according to a preferred embodiment of the present invention at an ambient temperature of 26 to 27 [deg.] C using a graphene substrate.

The graphene substrate 300 having the graphene nano-wall grown thereon is tightly fixed between the first heat sink 200 and the second heat sink 400 of the LED package by fastening means so that the temperature of the graphene substrate 300 is maintained at an ambient temperature of 26 to 27 [ The results of the thermal conductivity test are shown.

On the graph, it can be seen that the edge temperature is the highest in the vicinity of 150 [sec] after the lapse of a certain period of time, and then decreases in the order of the middle portion and the portion immediately below the LED. The edge is 125.5 [℃] at the maximum temperature, 121.5 [℃] at the middle part, and 107.5 [℃] at the lower part, and the temperature difference is about 18 [℃] at the edge. This means that the temperature at the edge of the substrate is raised to the highest level due to diffusion heat of the high-efficiency LED chip by the graphene nano-wire to the side portion.

Accordingly, when the graphene nano-wall grown graphene substrate 300 according to the embodiment of the present invention is used, if the air layer is disposed in the middle of the actual heat sink, the high heat generated from the high efficiency LED chip is relatively cooled By quickly dissipating heat to the edge of the LED package or to the outside radiator, there is a unique feature that maximizes the luminous efficiency of the LED package and prolongs the life of the LED package.

According to the embodiment of the present invention, instead of the graphene substrate 300, graphene nano-wall growth can be performed on the LED package itself. That is, the lower surface of the first heat sink 200 having the heat conductor having the mixed composition of nano diamond, metal, polymer, etc. laminated and sintered in the through hole 120 of the FR-4 PCB 100 and the FR- The graphene nano-wall growth is possible by the RF plasma electric field processor after sufficiently polishing the lower copper thin film 103 of the PCB 100 while maintaining the horizontal state.

Referring again to FIG. 4, the second heat sink 400 is a means for cooling the high heat generated by the LED chip 110 by a natural convection method, (Open Cell Type, OCT) Metal Foam which is formed by forming a metal material in which conduction and diffused heat are cooled by a natural convection method.

Here, the metal foam is a porous metal having a large number of bubbles in a metal material, and is classified into an open cell type (OCT) and a closed cell type (CCT). In the case of the alveolar-type foamed metal, bubbles inside the metal are not connected but exist independently. In the case of the open-celled foamed metal, the pores inside the metal material are connected to each other, The applications are so incomparable. That is, the foamed metal foam is a dodecahedron structure having a structure similar to a bone of a human body in terms of shape, and has a stable structure that is not inferior to a hexagonal structure such as an isotropic anisotropic honeycomb structure have. In addition to this structural stability, it has a surface area that can not be implemented mechanically. Applications include aircraft, automobiles, power plants, heat exchangers for power devices, heat sinks for semiconductors, silencers for large plants, catalysts for chemical plants, aircraft requiring high strength and light weight, and structural materials for the space industry , A shock absorber, a fuel cell (fuel cell) and a filter.

Therefore, in the embodiment of the present invention, it is possible to greatly reduce the installation cost of the street lamp such as the support pipe supporting the high weight by greatly reducing the weight of the LED lighting apparatus and enhancing the heat dissipation effect when the apparatus is used as a heat radiator such as a large- Feature.

Hereinafter, the thermal temperature and thermal resistance of the first heat sink 200 having the heat conductor according to the embodiment of the present invention will be described in detail with reference to FIGS. 9 to 11. FIG.

<Examples>

The first heat sink 200 having the heat conductor according to the embodiment of the present invention may be manufactured by mixing 4% of Nano Diamond Powder and 1% of Metal by weight of polymer mixed with Polymers Heat transfer material.

Here, in order to measure the thermal resistance characteristic of the LED package, two LED chips are mounted in series (Luxeon) on an FR-4 PCB 100 having a size of 25 [mm] x 25 [mm] Rebel 1-chip mounted, thermal tape = 0.9 [W / m · K]).

4, the thermal resistance measuring part is formed by mixing 4% of the nanodiamond powder of the FR-4 PCB Lower Copper with the high efficiency LED chip mounted thereon and 1% of the metal by Polymers The first heat sink 200 having the heat conductor as a composition and the graphene substrate 300 are fully bonded to each other. At this time, T3ster (MicReD) was used as a test device for measuring the thermal resistance of the LED package.

9, the application of the test parameters according to the embodiment of the present invention is performed under the conditions of: driving current: 0.35 A; sensor current: 0.001 A; applied power: 2.05 W; Sensitivity (K-Factor): -3.560 [mV / K], Measurement Delay & Time Limit: 180 [s], Transient correction: 83 ~ 697 [us], TIM Type: PAD (Taica alpha -GEL COH 4000)

10, the K-factor of the thermal resistance measuring apparatus according to the embodiment of the present invention is -3.560 [mV / K], the ambient temperature is 25 [deg.] C and the humidity is 50 [ The temperature rise of the LED package at RH (Relative Humidity) was 17.57 [℃], and the junction temperature was 42.57 [℃], which is the ambient temperature and the LED package temperature rise.

Referring to FIG. 11, the thermal resistance of the LED package, which determines the heat dissipation characteristics of the heat dissipating device of the LED lighting apparatus using the polymer according to the embodiment of the present invention, is determined as 9.10 [K / W] at an ambient temperature of 25 [ .

This shows a remarkably low thermal resistance value compared to the 46 [K / W] of the via-hole method applied to the existing product and the 36 [K / W] thermal resistance of the heat transfer insulating sheet method, and the nano diamond powder 4 The light efficiency of the luminaire having the LED package may be improved through the first heat sink 200 formed of the heat transfer material mixed with the% by weight and the 1% by weight of the polymer.

Here, when the LED chips 110 mounted on the FR-4 PCB 100 according to the embodiment of the present invention have a serial circuit configuration as compared with the parallel circuit configuration, the fact that the thermal resistance value is measured to be somewhat high, In addition to the general characteristics, the junction temperature plus LED package temperature rise of 42.57 [℃] at 2.05 [W] and ambient temperature of 25 [℃], which is more than twice that of parallel circuit, In the first half of the year. Therefore, when designing a lighting device having an LED package, a high-efficiency LED chip should be formed of a parallel circuit and various design techniques considering ambient temperature should be applied.

The foregoing description is merely illustrative of the technical idea of the present invention and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the scope of the present invention but to limit the scope of the technical idea of the present invention. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: Double Layer Printed Circuit Board (FR-4 PCB)
101: epoxy layer 102: upper copper thin film
103: lower copper thin film 104: copper thin film (diameter 0.07 mm)
110: LED chip 120: Through hole
130: via hole 140: secondary optical lens
200: first heat sink
300: Graphene substrate
400: second heat sink

Claims (3)

In a heat dissipating device of an LED lighting apparatus,
The heat dissipating device may include at least one LED chip 110 mounted in series with a SMT (Surface Mount Technology) and mounting a first heat sink to conduct heat from the heat dissipation port of the LED chip to the heat sink, A double layer printed circuit board (FR-4 PCB, 100) having a through hole (120) and a plurality of perforated via holes (130);
A first heat sink having a thermal conductor of a composition in which Nano Diamond Powder and Metal are mixed with conductive polymers is formed in a through hole of the double layer printed circuit board, , 200);
The upper part of the first heat sink is in contact with the LED chip heat dissipating unit. The lower part of the first heat sink is made of aluminum (Al) or copper (Cu) flat plate was repeatedly polished and cleaned. Either of them was selected to generate a plasma inside the quartz tube by the tank current flowing in the coil and the capacitor under the condition of the frequency 13.5 MHz power supply and LC parallel resonance, (Graphene Substrate, 300);
A second heat sink 400, which is a heat radiator formed by molding a metal foam made of aluminum material into a radiator structure for cooling the heat conducted and diffused from the graphene substrate by a natural convection method, And a heat dissipation device of the LED lighting device using the polymer.
The method according to claim 1,
The first heat sink 200 is formed by mixing 4% by weight of a Nano Diamond Powder and 1% by weight of a metal with conductive polymers and then performing heat treatment at 100 [deg.] C for 5 hours Wherein the heat conductive member is made of a polymer.
The method according to claim 1,
The thermal resistance measurement site for the heat dissipation device of the LED lighting apparatus using the polymer is a junction unit in which the first heat sink 200 having the heat conductor and the graphene substrate 300 are completely in close contact with each other, Value is 9.10 [K / W] at an ambient temperature of 25 [DEG C].
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