KR20160129922A - 트렌치 금속 산화물 반도체 전계 효과 트랜지스터 - Google Patents

트렌치 금속 산화물 반도체 전계 효과 트랜지스터 Download PDF

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Publication number
KR20160129922A
KR20160129922A KR1020167030727A KR20167030727A KR20160129922A KR 20160129922 A KR20160129922 A KR 20160129922A KR 1020167030727 A KR1020167030727 A KR 1020167030727A KR 20167030727 A KR20167030727 A KR 20167030727A KR 20160129922 A KR20160129922 A KR 20160129922A
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KR
South Korea
Prior art keywords
regions
gate
tmosfet
drift
drain region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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KR1020167030727A
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English (en)
Korean (ko)
Inventor
나베엔 티필네니
데바 엔. 패트타나야크
Original Assignee
비쉐이-실리코닉스
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Application filed by 비쉐이-실리코닉스 filed Critical 비쉐이-실리코닉스
Publication of KR20160129922A publication Critical patent/KR20160129922A/ko
Ceased legal-status Critical Current

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    • H01L29/7813—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H01L29/0878—
    • H01L29/42368—
    • H01L29/66734—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020167030727A 2009-10-28 2010-10-28 트렌치 금속 산화물 반도체 전계 효과 트랜지스터 Ceased KR20160129922A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25566009P 2009-10-28 2009-10-28
US61/255,660 2009-10-28
US12/824,075 2010-06-25
US12/824,075 US10026835B2 (en) 2009-10-28 2010-06-25 Field boosted metal-oxide-semiconductor field effect transistor
PCT/US2010/054586 WO2011059782A2 (en) 2009-10-28 2010-10-28 Trench metal-oxide-semiconductor field effect transistor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127012344A Division KR20120091210A (ko) 2009-10-28 2010-10-28 트렌치 금속 산화물 반도체 전계 효과 트랜지스터

Publications (1)

Publication Number Publication Date
KR20160129922A true KR20160129922A (ko) 2016-11-09

Family

ID=43897653

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020167030727A Ceased KR20160129922A (ko) 2009-10-28 2010-10-28 트렌치 금속 산화물 반도체 전계 효과 트랜지스터
KR1020127012344A Ceased KR20120091210A (ko) 2009-10-28 2010-10-28 트렌치 금속 산화물 반도체 전계 효과 트랜지스터

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020127012344A Ceased KR20120091210A (ko) 2009-10-28 2010-10-28 트렌치 금속 산화물 반도체 전계 효과 트랜지스터

Country Status (6)

Country Link
US (1) US10026835B2 (https=)
EP (1) EP2494600A4 (https=)
JP (3) JP2013509720A (https=)
KR (2) KR20160129922A (https=)
CN (1) CN102687274B (https=)
WO (1) WO2011059782A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200494131Y1 (ko) 2020-10-29 2021-08-10 (주)동광전기 활선작업용 전선커버기구

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US9530901B2 (en) * 2012-01-31 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Decoupling finFET capacitors
US9853140B2 (en) 2012-12-31 2017-12-26 Vishay-Siliconix Adaptive charge balanced MOSFET techniques
JP6873937B2 (ja) * 2018-02-20 2021-05-19 株式会社東芝 半導体装置
CN113437137A (zh) * 2021-08-09 2021-09-24 无锡新洁能股份有限公司 快恢复功率mosfet及其制造方法

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GB926821A (en) 1958-09-24 1963-05-22 Continental Oil Co Underground disposal of radioactive liquids or slurries
US5164325A (en) 1987-10-08 1992-11-17 Siliconix Incorporated Method of making a vertical current flow field effect transistor
US5648288A (en) 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
US5910669A (en) 1992-07-24 1999-06-08 Siliconix Incorporated Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
US5558313A (en) 1992-07-24 1996-09-24 Siliconix Inorporated Trench field effect transistor with reduced punch-through susceptibility and low RDSon
US5592005A (en) 1995-03-31 1997-01-07 Siliconix Incorporated Punch-through field effect transistor
US5750416A (en) 1995-04-07 1998-05-12 Siliconix Incorporated Method of forming a lateral field effect transistor having reduced drain-to-source on-resistance
US5637898A (en) * 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
US6090716A (en) 1996-12-17 2000-07-18 Siliconix Incorporated Method of fabricating a field effect transistor
US6072216A (en) 1998-05-01 2000-06-06 Siliconix Incorporated Vertical DMOS field effect transistor with conformal buried layer for reduced on-resistance
US7084456B2 (en) * 1999-05-25 2006-08-01 Advanced Analogic Technologies, Inc. Trench MOSFET with recessed clamping diode using graded doping
US6285060B1 (en) * 1999-12-30 2001-09-04 Siliconix Incorporated Barrier accumulation-mode MOSFET
US6696726B1 (en) 2000-08-16 2004-02-24 Fairchild Semiconductor Corporation Vertical MOSFET with ultra-low resistance and low gate charge
JP3973395B2 (ja) * 2001-10-16 2007-09-12 株式会社豊田中央研究所 半導体装置とその製造方法
GB0327793D0 (en) * 2003-11-29 2003-12-31 Koninkl Philips Electronics Nv Trench mosfet
US7279743B2 (en) 2003-12-02 2007-10-09 Vishay-Siliconix Closed cell trench metal-oxide-semiconductor field effect transistor
US7183610B2 (en) * 2004-04-30 2007-02-27 Siliconix Incorporated Super trench MOSFET including buried source electrode and method of fabricating the same
US6906380B1 (en) * 2004-05-13 2005-06-14 Vishay-Siliconix Drain side gate trench metal-oxide-semiconductor field effect transistor
US8183629B2 (en) 2004-05-13 2012-05-22 Vishay-Siliconix Stacked trench metal-oxide-semiconductor field effect transistor device
JP2006128506A (ja) 2004-10-29 2006-05-18 Sharp Corp トレンチ型ｍｏｓｆｅｔ及びその製造方法
JP2006237066A (ja) 2005-02-22 2006-09-07 Toshiba Corp 半導体装置
TWI489557B (zh) 2005-12-22 2015-06-21 維雪 希里康尼克斯公司 高移動率ｐ-通道溝槽及平面型空乏模式的功率型金屬氧化物半導體場效電晶體
KR101375035B1 (ko) * 2006-09-27 2014-03-14 맥스파워 세미컨덕터 인크. Ｍｏｓｆｅｔ 및 그 제조 방법
US8344451B2 (en) * 2007-01-09 2013-01-01 Maxpower Semiconductor, Inc. Semiconductor device
US7615847B2 (en) 2007-03-23 2009-11-10 Infineon Technologies Austria Ag Method for producing a semiconductor component
US9947770B2 (en) * 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
US8269263B2 (en) 2008-05-12 2012-09-18 Vishay-Siliconix High current density power field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200494131Y1 (ko) 2020-10-29 2021-08-10 (주)동광전기 활선작업용 전선커버기구

Also Published As

Publication number Publication date
EP2494600A2 (en) 2012-09-05
US10026835B2 (en) 2018-07-17
JP2018011079A (ja) 2018-01-18
JP2015159299A (ja) 2015-09-03
JP2013509720A (ja) 2013-03-14
EP2494600A4 (en) 2014-04-30
KR20120091210A (ko) 2012-08-17
WO2011059782A3 (en) 2011-08-25
CN102687274A (zh) 2012-09-19
US20110095359A1 (en) 2011-04-28
CN102687274B (zh) 2016-04-20
WO2011059782A2 (en) 2011-05-19

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