KR20160111333A - 구리 배선의 제조 방법 - Google Patents

구리 배선의 제조 방법 Download PDF

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Publication number
KR20160111333A
KR20160111333A KR1020160029686A KR20160029686A KR20160111333A KR 20160111333 A KR20160111333 A KR 20160111333A KR 1020160029686 A KR1020160029686 A KR 1020160029686A KR 20160029686 A KR20160029686 A KR 20160029686A KR 20160111333 A KR20160111333 A KR 20160111333A
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KR
South Korea
Prior art keywords
film
mno
wiring
hydrogen radical
forming
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KR1020160029686A
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English (en)
Korean (ko)
Inventor
겐지 마츠모토
다다히로 이시자카
펑 창
오사무 요코야마
다카시 사쿠마
히로유키 나가이
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20160111333A publication Critical patent/KR20160111333A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01001—Hydrogen [H]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020160029686A 2015-03-16 2016-03-11 구리 배선의 제조 방법 KR20160111333A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2015-051626 2015-03-16
JP2015051626 2015-03-16
JPJP-P-2016-000490 2016-01-05
JP2016000490A JP6584326B2 (ja) 2015-03-16 2016-01-05 Ｃｕ配線の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020180064736A Division KR102103072B1 (ko) 2015-03-16 2018-06-05 구리 배선의 제조 방법

Publications (1)

Publication Number Publication Date
KR20160111333A true KR20160111333A (ko) 2016-09-26

Family

ID=57009286

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020160029686A KR20160111333A (ko) 2015-03-16 2016-03-11 구리 배선의 제조 방법
KR1020180064736A KR102103072B1 (ko) 2015-03-16 2018-06-05 구리 배선의 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020180064736A KR102103072B1 (ko) 2015-03-16 2018-06-05 구리 배선의 제조 방법

Country Status (2)

Country Link
JP (1) JP6584326B2 (ja)
KR (2) KR20160111333A (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6824717B2 (ja) * 2016-12-09 2021-02-03 東京エレクトロン株式会社 ＳｉＣ膜の成膜方法
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
TW202021046A (zh) * 2018-09-14 2020-06-01 美商應用材料股份有限公司 形成具有嵌入式阻障層的穿孔之方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300568A (ja) 2007-05-30 2008-12-11 Tokyo Electron Ltd 半導体装置の製造方法、半導体製造装置及び記憶媒体
JP2010021447A (ja) 2008-07-11 2010-01-28 Tokyo Electron Ltd 成膜方法及び処理システム
WO2012173067A1 (ja) 2011-06-16 2012-12-20 東京エレクトロン株式会社 半導体装置の製造方法、半導体装置、半導体装置の製造装置及び記憶媒体

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101692170B1 (ko) * 2012-07-18 2017-01-02 도쿄엘렉트론가부시키가이샤 반도체 장치의 제조 방법
JP5969306B2 (ja) * 2012-08-08 2016-08-17 東京エレクトロン株式会社 Ｃｕ配線の形成方法
JP6117588B2 (ja) * 2012-12-12 2017-04-19 東京エレクトロン株式会社 Ｃｕ配線の形成方法
JP2014236192A (ja) * 2013-06-05 2014-12-15 東京エレクトロン株式会社 酸化マンガン膜の形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300568A (ja) 2007-05-30 2008-12-11 Tokyo Electron Ltd 半導体装置の製造方法、半導体製造装置及び記憶媒体
JP2010021447A (ja) 2008-07-11 2010-01-28 Tokyo Electron Ltd 成膜方法及び処理システム
WO2012173067A1 (ja) 2011-06-16 2012-12-20 東京エレクトロン株式会社 半導体装置の製造方法、半導体装置、半導体装置の製造装置及び記憶媒体

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Publication number Publication date
JP2016174141A (ja) 2016-09-29
KR102103072B1 (ko) 2020-04-21
KR20180068328A (ko) 2018-06-21
JP6584326B2 (ja) 2019-10-02

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