KR20160036013A - 단결정 갈륨-함유 질화물을 수득하는 방법 및 이 방법에 의해 수득된 단결정 갈륨-함유 질화물 - Google Patents
단결정 갈륨-함유 질화물을 수득하는 방법 및 이 방법에 의해 수득된 단결정 갈륨-함유 질화물 Download PDFInfo
- Publication number
- KR20160036013A KR20160036013A KR1020157036340A KR20157036340A KR20160036013A KR 20160036013 A KR20160036013 A KR 20160036013A KR 1020157036340 A KR1020157036340 A KR 1020157036340A KR 20157036340 A KR20157036340 A KR 20157036340A KR 20160036013 A KR20160036013 A KR 20160036013A
- Authority
- KR
- South Korea
- Prior art keywords
- nitride
- less
- concentration
- gallium
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 84
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 41
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 35
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 63
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000001301 oxygen Substances 0.000 claims abstract description 52
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 52
- 239000013078 crystal Substances 0.000 claims abstract description 37
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 31
- 239000002019 doping agent Substances 0.000 claims abstract description 23
- 238000002425 crystallisation Methods 0.000 claims abstract description 22
- 230000008025 crystallization Effects 0.000 claims abstract description 22
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 8
- 238000002844 melting Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 7
- 239000000470 constituent Substances 0.000 claims abstract description 4
- 238000010309 melting process Methods 0.000 claims abstract description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 65
- 239000011777 magnesium Substances 0.000 claims description 50
- 239000011701 zinc Substances 0.000 claims description 36
- 239000000370 acceptor Substances 0.000 claims description 29
- 239000011575 calcium Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 27
- 239000011734 sodium Substances 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910052749 magnesium Inorganic materials 0.000 claims description 14
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 13
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 229910052791 calcium Inorganic materials 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052790 beryllium Inorganic materials 0.000 claims description 9
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 9
- 229910052793 cadmium Inorganic materials 0.000 claims description 8
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 8
- 239000003574 free electron Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 230000001089 mineralizing effect Effects 0.000 claims description 6
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- 150000001540 azides Chemical class 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 2
- 150000001639 boron compounds Chemical class 0.000 claims 9
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 16
- 229910052783 alkali metal Inorganic materials 0.000 description 11
- 150000001340 alkali metals Chemical class 0.000 description 11
- 238000004090 dissolution Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- -1 for example Chemical class 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
- C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL404149A PL229568B1 (pl) | 2013-05-30 | 2013-05-30 | Sposób wytwarzania monokrystalicznego azotku zawierającego gal i monokrystaliczny azotek zawierający gal, wytworzony tym sposobem |
| PLP.404149 | 2013-05-30 | ||
| PCT/EP2014/055876 WO2014191126A1 (en) | 2013-05-30 | 2014-03-24 | Method for obtaining monocrystalline gallium-containing nitride and monocrystalline gallium-containing nitride obtained by this method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20160036013A true KR20160036013A (ko) | 2016-04-01 |
Family
ID=50543016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157036340A Withdrawn KR20160036013A (ko) | 2013-05-30 | 2014-03-24 | 단결정 갈륨-함유 질화물을 수득하는 방법 및 이 방법에 의해 수득된 단결정 갈륨-함유 질화물 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20160108547A1 (OSRAM) |
| EP (1) | EP3063315A1 (OSRAM) |
| JP (1) | JP2016521667A (OSRAM) |
| KR (1) | KR20160036013A (OSRAM) |
| CN (1) | CN105556006A (OSRAM) |
| CA (1) | CA2913720A1 (OSRAM) |
| HK (1) | HK1224343A1 (OSRAM) |
| PL (1) | PL229568B1 (OSRAM) |
| RU (1) | RU2015152554A (OSRAM) |
| WO (1) | WO2014191126A1 (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL231548B1 (pl) | 2014-09-11 | 2019-03-29 | Ammono Spolka Akcyjna | Sposób wytwarzania monokrystalicznego azotku zawierającego gal |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| HUP0401866A3 (en) | 2001-06-06 | 2005-12-28 | Nichia Corp | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| PL224993B1 (pl) | 2002-12-11 | 2017-02-28 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal |
| PL221055B1 (pl) | 2002-12-11 | 2016-02-29 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Sposób wytwarzania objętościowego monokrystalicznego azotku zawierającego gal |
| PL219601B1 (pl) | 2002-12-11 | 2015-06-30 | Ammono Spółka Z Ograniczoną Odpowiedzialnością | Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal |
| JP5159023B2 (ja) * | 2002-12-27 | 2013-03-06 | モーメンティブ・パフォーマンス・マテリアルズ・インク | 窒化ガリウム結晶、ホモエピタキシャル窒化ガリウムを基材とするデバイス、及びその製造方法 |
| JP4579294B2 (ja) | 2004-06-11 | 2010-11-10 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | 第１３族元素窒化物の層から製造される高電子移動度トランジスタ（ｈｅｍｔ）およびその製造方法 |
| US20060247623A1 (en) * | 2005-04-29 | 2006-11-02 | Sdgi Holdings, Inc. | Local delivery of an active agent from an orthopedic implant |
| PL394857A1 (pl) * | 2008-08-07 | 2011-09-26 | Sorra, Inc. | Sposób amonotermalnego wytwarzania kryształów ciągnionych azotku galu na dużą skalę |
| US8878230B2 (en) * | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
| EP2267197A1 (en) * | 2009-06-25 | 2010-12-29 | AMMONO Sp.z o.o. | Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates |
| JP5291648B2 (ja) * | 2010-03-17 | 2013-09-18 | 日本碍子株式会社 | 窒化物結晶の製造装置及び製造方法 |
| EP3312310B1 (en) * | 2011-10-28 | 2021-12-15 | Mitsubishi Chemical Corporation | Gallium nitride crystal |
| WO2014129544A1 (ja) * | 2013-02-22 | 2014-08-28 | 三菱化学株式会社 | 周期表第１３族金属窒化物結晶およびその製造方法 |
-
2013
- 2013-05-30 PL PL404149A patent/PL229568B1/pl unknown
-
2014
- 2014-03-24 JP JP2016515680A patent/JP2016521667A/ja not_active Ceased
- 2014-03-24 HK HK16112554.5A patent/HK1224343A1/zh unknown
- 2014-03-24 US US14/894,337 patent/US20160108547A1/en not_active Abandoned
- 2014-03-24 EP EP14718522.7A patent/EP3063315A1/en not_active Withdrawn
- 2014-03-24 CA CA2913720A patent/CA2913720A1/en not_active Abandoned
- 2014-03-24 RU RU2015152554A patent/RU2015152554A/ru not_active Application Discontinuation
- 2014-03-24 WO PCT/EP2014/055876 patent/WO2014191126A1/en not_active Ceased
- 2014-03-24 KR KR1020157036340A patent/KR20160036013A/ko not_active Withdrawn
- 2014-03-24 CN CN201480031120.6A patent/CN105556006A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014191126A1 (en) | 2014-12-04 |
| EP3063315A1 (en) | 2016-09-07 |
| US20160108547A1 (en) | 2016-04-21 |
| RU2015152554A (ru) | 2017-07-05 |
| HK1224343A1 (zh) | 2017-08-18 |
| JP2016521667A (ja) | 2016-07-25 |
| PL404149A1 (pl) | 2014-12-08 |
| CA2913720A1 (en) | 2014-12-04 |
| PL229568B1 (pl) | 2018-07-31 |
| CN105556006A (zh) | 2016-05-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5014804B2 (ja) | バルク単結晶ガリウム含有窒化物およびその用途 | |
| CA2449714C (en) | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride | |
| PL224991B1 (pl) | Podłoże do stosowania dla urządzeń opto-elektrycznych lub elektrycznych oraz sposób jego wytwarzania | |
| KR20090064379A (ko) | 질화물 반도체의 제조 방법, 결정 성장 속도 증가제, 질화물 단결정, 웨이퍼 및 디바이스 | |
| US7314517B2 (en) | Process for obtaining bulk mono-crystalline gallium-containing nitride | |
| AU2002328130A1 (en) | Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride | |
| US20170253990A1 (en) | A method for producing monocrystalline gallium containing nitride and monocrystalline gallium containing nitride, prepared with this method | |
| KR20160036013A (ko) | 단결정 갈륨-함유 질화물을 수득하는 방법 및 이 방법에 의해 수득된 단결정 갈륨-함유 질화물 | |
| CN101010453A (zh) | 周期表第13族金属氮化物结晶的制造方法以及使用其的半导体器件的制造方法 | |
| PL232212B1 (pl) | Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal w środowisku nadkrytycznego rozpuszczalnika amoniakalnego | |
| CN1973063B (zh) | 块状单晶含镓氮化物及其应用 | |
| PL225423B1 (pl) | Sposób wytwarzania podłoża standaryzowanego warstwą epitaksjalną ( podłoża typu template), z objętościowego monokrystalicznego azotku zawierającego gal | |
| HK1241940A1 (en) | A method for producing monocrystalline gallium containing nitride and monocrystalline gallium containing nitride, prepared with this method | |
| Ehrentraut et al. | A brief review on the Na-flux method toward growth of large-size GaN crystal | |
| PL221055B1 (pl) | Sposób wytwarzania objętościowego monokrystalicznego azotku zawierającego gal | |
| PL225425B1 (pl) | Sposób wytwarzania złożonego podłoża standaryzowanego warstwą epitaksjalną (podłoża typu template) z objętościowego monokrystalicznego azotku zawierającego gal | |
| PL225424B1 (pl) | Sposób wytwarzania podłoża typu template z objętościowego monokrystalicznego azotku zawierającego gal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20151222 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |