KR20160031510A - 전자 장치용 전극 표면 변성 층 - Google Patents
전자 장치용 전극 표면 변성 층 Download PDFInfo
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- KR20160031510A KR20160031510A KR1020167003360A KR20167003360A KR20160031510A KR 20160031510 A KR20160031510 A KR 20160031510A KR 1020167003360 A KR1020167003360 A KR 1020167003360A KR 20167003360 A KR20167003360 A KR 20167003360A KR 20160031510 A KR20160031510 A KR 20160031510A
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- 238000005538 encapsulation Methods 0.000 description 1
- XSXVXSCMWUJXOS-UHFFFAOYSA-N ethyl 2-ethylbenzoate Chemical compound CCOC(=O)C1=CC=CC=C1CC XSXVXSCMWUJXOS-UHFFFAOYSA-N 0.000 description 1
- SOUAXOGPALPTTC-UHFFFAOYSA-N ethyl 2-methylbenzoate Chemical compound CCOC(=O)C1=CC=CC=C1C SOUAXOGPALPTTC-UHFFFAOYSA-N 0.000 description 1
- KRBVDDXLFALXDC-UHFFFAOYSA-N ethyl 3-ethylbenzoate Chemical compound CCOC(=O)C1=CC=CC(CC)=C1 KRBVDDXLFALXDC-UHFFFAOYSA-N 0.000 description 1
- WSJNYOVBJSOQST-UHFFFAOYSA-N ethyl 3-methylbenzoate Chemical compound CCOC(=O)C1=CC=CC(C)=C1 WSJNYOVBJSOQST-UHFFFAOYSA-N 0.000 description 1
- ZPUKPAPWEWUPTC-UHFFFAOYSA-N ethyl 4-ethylbenzoate Chemical compound CCOC(=O)C1=CC=C(CC)C=C1 ZPUKPAPWEWUPTC-UHFFFAOYSA-N 0.000 description 1
- NWPWRAWAUYIELB-UHFFFAOYSA-N ethyl 4-methylbenzoate Chemical compound CCOC(=O)C1=CC=C(C)C=C1 NWPWRAWAUYIELB-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
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- 238000013213 extrapolation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- FSPSELPMWGWDRY-UHFFFAOYSA-N m-Methylacetophenone Chemical compound CC(=O)C1=CC=CC(C)=C1 FSPSELPMWGWDRY-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- UUEVFMOUBSLVJW-UHFFFAOYSA-N oxo-[[1-[2-[2-[2-[4-(oxoazaniumylmethylidene)pyridin-1-yl]ethoxy]ethoxy]ethyl]pyridin-4-ylidene]methyl]azanium;dibromide Chemical compound [Br-].[Br-].C1=CC(=C[NH+]=O)C=CN1CCOCCOCCN1C=CC(=C[NH+]=O)C=C1 UUEVFMOUBSLVJW-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- DLRJIFUOBPOJNS-UHFFFAOYSA-N phenetole Chemical compound CCOC1=CC=CC=C1 DLRJIFUOBPOJNS-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002335 surface treatment layer Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- ABDKAPXRBAPSQN-UHFFFAOYSA-N veratrole Chemical compound COC1=CC=CC=C1OC ABDKAPXRBAPSQN-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920003249 vinylidene fluoride hexafluoropropylene elastomer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H01L51/105—
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
- C07D495/04—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/12—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains three hetero rings
- C07D495/14—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/22—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
-
- H01L51/0074—
-
- H01L51/0541—
-
- H01L51/0545—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
-
- H01L2031/0344—
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- H01L2251/10—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1312609.9A GB201312609D0 (en) | 2013-07-15 | 2013-07-15 | Method |
| GB1312609.9 | 2013-07-15 | ||
| PCT/GB2014/000283 WO2015008015A1 (en) | 2013-07-15 | 2014-07-11 | Electrode surface modification layer for electronic devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20160031510A true KR20160031510A (ko) | 2016-03-22 |
Family
ID=49081267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020167003360A Withdrawn KR20160031510A (ko) | 2013-07-15 | 2014-07-11 | 전자 장치용 전극 표면 변성 층 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9793504B2 (enExample) |
| JP (1) | JP6356240B2 (enExample) |
| KR (1) | KR20160031510A (enExample) |
| CN (1) | CN105378960B (enExample) |
| DE (1) | DE112014003272T5 (enExample) |
| GB (2) | GB201312609D0 (enExample) |
| TW (1) | TW201517339A (enExample) |
| WO (1) | WO2015008015A1 (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10115903B2 (en) * | 2012-12-18 | 2018-10-30 | Merck Patent Gmbh | Emitter having a condensed ring system |
| JP7387685B2 (ja) * | 2021-09-17 | 2023-11-28 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、プログラム、および基板処理装置 |
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| US7045285B1 (en) * | 1996-11-05 | 2006-05-16 | Clinical Micro Sensors, Inc. | Electronic transfer moieties attached to peptide nucleic acids |
| US6501217B2 (en) * | 1998-02-02 | 2002-12-31 | International Business Machines Corporation | Anode modification for organic light emitting diodes |
| JP4364586B2 (ja) * | 2003-08-27 | 2009-11-18 | Tdk株式会社 | 有機電界効果トランジスタ及びその製造方法 |
| US7642038B2 (en) * | 2004-03-24 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus |
| US8187746B2 (en) * | 2008-05-16 | 2012-05-29 | Uchicago Argonne, Llc | Surface modification agents for lithium batteries |
| KR20100091663A (ko) * | 2009-02-11 | 2010-08-19 | 삼성전자주식회사 | 표면개질제, 이를 사용하여 제조된 적층 구조, 그 구조의 제조방법 및 이를 포함하는 트랜지스터 |
| US8637857B2 (en) * | 2010-04-06 | 2014-01-28 | Basf Se | Substituted carbazole derivatives and use thereof in organic electronics |
| GB201013820D0 (en) * | 2010-08-18 | 2010-09-29 | Cambridge Display Tech Ltd | Low contact resistance organic thin film transistors |
| GB201021277D0 (en) * | 2010-12-15 | 2011-01-26 | Cambridge Display Tech Ltd | Semiconductor blend |
| US9315724B2 (en) * | 2011-06-14 | 2016-04-19 | Basf Se | Metal complexes comprising azabenzimidazole carbene ligands and the use thereof in OLEDs |
| EP2736911A1 (en) * | 2011-07-27 | 2014-06-04 | Merck Patent GmbH | Small molecules and their use as organic semiconductors |
| GB201118997D0 (en) * | 2011-11-03 | 2011-12-14 | Cambridge Display Tech Ltd | Electronic device and method |
| TW201348241A (zh) * | 2011-12-30 | 2013-12-01 | Imp Innovations Ltd | 有機半導體材料之非習用性化學摻雜 |
| GB201203159D0 (en) * | 2012-02-23 | 2012-04-11 | Smartkem Ltd | Organic semiconductor compositions |
| KR101952706B1 (ko) * | 2012-07-24 | 2019-02-28 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함하는 유기 발광 표시 장치 |
| US20140116509A1 (en) * | 2012-10-30 | 2014-05-01 | Sean Andrew Vail | Solid-State Dye-Sensitized Solar Cell Using Oxidative Dopant |
| GB201502113D0 (en) * | 2015-02-09 | 2015-03-25 | Cambridge Display Tech Ltd | Solution for a semiconducting layer of an organic electronic device |
-
2013
- 2013-07-15 GB GBGB1312609.9A patent/GB201312609D0/en not_active Ceased
-
2014
- 2014-07-11 US US14/905,091 patent/US9793504B2/en not_active Expired - Fee Related
- 2014-07-11 CN CN201480040221.XA patent/CN105378960B/zh not_active Expired - Fee Related
- 2014-07-11 GB GB1522168.2A patent/GB2529600A/en not_active Withdrawn
- 2014-07-11 KR KR1020167003360A patent/KR20160031510A/ko not_active Withdrawn
- 2014-07-11 JP JP2016526687A patent/JP6356240B2/ja not_active Expired - Fee Related
- 2014-07-11 DE DE112014003272.7T patent/DE112014003272T5/de not_active Withdrawn
- 2014-07-11 WO PCT/GB2014/000283 patent/WO2015008015A1/en not_active Ceased
- 2014-07-15 TW TW103124308A patent/TW201517339A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2529600A (en) | 2016-02-24 |
| JP2016531423A (ja) | 2016-10-06 |
| CN105378960A (zh) | 2016-03-02 |
| WO2015008015A1 (en) | 2015-01-22 |
| US9793504B2 (en) | 2017-10-17 |
| TW201517339A (zh) | 2015-05-01 |
| CN105378960B (zh) | 2018-09-18 |
| GB201312609D0 (en) | 2013-08-28 |
| US20160149147A1 (en) | 2016-05-26 |
| DE112014003272T5 (de) | 2016-04-14 |
| JP6356240B2 (ja) | 2018-07-11 |
| GB201522168D0 (en) | 2016-01-27 |
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| PA0105 | International application |
Patent event date: 20160205 Patent event code: PA01051R01D Comment text: International Patent Application |
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| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |