TW201517339A - 方法 - Google Patents
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- TW201517339A TW201517339A TW103124308A TW103124308A TW201517339A TW 201517339 A TW201517339 A TW 201517339A TW 103124308 A TW103124308 A TW 103124308A TW 103124308 A TW103124308 A TW 103124308A TW 201517339 A TW201517339 A TW 201517339A
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- KRBVDDXLFALXDC-UHFFFAOYSA-N ethyl 3-ethylbenzoate Chemical compound CCOC(=O)C1=CC=CC(CC)=C1 KRBVDDXLFALXDC-UHFFFAOYSA-N 0.000 description 1
- WSJNYOVBJSOQST-UHFFFAOYSA-N ethyl 3-methylbenzoate Chemical compound CCOC(=O)C1=CC=CC(C)=C1 WSJNYOVBJSOQST-UHFFFAOYSA-N 0.000 description 1
- ZPUKPAPWEWUPTC-UHFFFAOYSA-N ethyl 4-ethylbenzoate Chemical compound CCOC(=O)C1=CC=C(CC)C=C1 ZPUKPAPWEWUPTC-UHFFFAOYSA-N 0.000 description 1
- NWPWRAWAUYIELB-UHFFFAOYSA-N ethyl 4-methylbenzoate Chemical compound CCOC(=O)C1=CC=C(C)C=C1 NWPWRAWAUYIELB-UHFFFAOYSA-N 0.000 description 1
- 125000000031 ethylamino group Chemical group [H]C([H])([H])C([H])([H])N([H])[*] 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- FSPSELPMWGWDRY-UHFFFAOYSA-N m-Methylacetophenone Chemical compound CC(=O)C1=CC=CC(C)=C1 FSPSELPMWGWDRY-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- UUEVFMOUBSLVJW-UHFFFAOYSA-N oxo-[[1-[2-[2-[2-[4-(oxoazaniumylmethylidene)pyridin-1-yl]ethoxy]ethoxy]ethyl]pyridin-4-ylidene]methyl]azanium;dibromide Chemical compound [Br-].[Br-].C1=CC(=C[NH+]=O)C=CN1CCOCCOCCN1C=CC(=C[NH+]=O)C=C1 UUEVFMOUBSLVJW-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- ATGUVEKSASEFFO-UHFFFAOYSA-N p-aminodiphenylamine Chemical compound C1=CC(N)=CC=C1NC1=CC=CC=C1 ATGUVEKSASEFFO-UHFFFAOYSA-N 0.000 description 1
- NODGRWCMFMEGJH-UHFFFAOYSA-N p-ethylacetophenone Chemical compound CCC1=CC=C(C(C)=O)C=C1 NODGRWCMFMEGJH-UHFFFAOYSA-N 0.000 description 1
- DLRJIFUOBPOJNS-UHFFFAOYSA-N phenetole Chemical compound CCOC1=CC=CC=C1 DLRJIFUOBPOJNS-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000004426 substituted alkynyl group Chemical group 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical compound [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- RSPCKAHMRANGJZ-UHFFFAOYSA-N thiohydroxylamine Chemical group SN RSPCKAHMRANGJZ-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- UDKYUQZDRMRDOR-UHFFFAOYSA-N tungsten Chemical compound [W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W][W] UDKYUQZDRMRDOR-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920003249 vinylidene fluoride hexafluoropropylene elastomer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1312609.9A GB201312609D0 (en) | 2013-07-15 | 2013-07-15 | Method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201517339A true TW201517339A (zh) | 2015-05-01 |
Family
ID=49081267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103124308A TW201517339A (zh) | 2013-07-15 | 2014-07-15 | 方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9793504B2 (enExample) |
| JP (1) | JP6356240B2 (enExample) |
| KR (1) | KR20160031510A (enExample) |
| CN (1) | CN105378960B (enExample) |
| DE (1) | DE112014003272T5 (enExample) |
| GB (2) | GB201312609D0 (enExample) |
| TW (1) | TW201517339A (enExample) |
| WO (1) | WO2015008015A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI882238B (zh) * | 2021-09-17 | 2025-05-01 | 日商國際電氣股份有限公司 | 基板處理方法、程式、基板處理裝置及半導體裝置之製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10115903B2 (en) * | 2012-12-18 | 2018-10-30 | Merck Patent Gmbh | Emitter having a condensed ring system |
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| US7045285B1 (en) * | 1996-11-05 | 2006-05-16 | Clinical Micro Sensors, Inc. | Electronic transfer moieties attached to peptide nucleic acids |
| US6501217B2 (en) * | 1998-02-02 | 2002-12-31 | International Business Machines Corporation | Anode modification for organic light emitting diodes |
| JP4364586B2 (ja) * | 2003-08-27 | 2009-11-18 | Tdk株式会社 | 有機電界効果トランジスタ及びその製造方法 |
| US7642038B2 (en) * | 2004-03-24 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus |
| US8187746B2 (en) * | 2008-05-16 | 2012-05-29 | Uchicago Argonne, Llc | Surface modification agents for lithium batteries |
| KR20100091663A (ko) * | 2009-02-11 | 2010-08-19 | 삼성전자주식회사 | 표면개질제, 이를 사용하여 제조된 적층 구조, 그 구조의 제조방법 및 이를 포함하는 트랜지스터 |
| US8637857B2 (en) * | 2010-04-06 | 2014-01-28 | Basf Se | Substituted carbazole derivatives and use thereof in organic electronics |
| GB201013820D0 (en) * | 2010-08-18 | 2010-09-29 | Cambridge Display Tech Ltd | Low contact resistance organic thin film transistors |
| GB201021277D0 (en) * | 2010-12-15 | 2011-01-26 | Cambridge Display Tech Ltd | Semiconductor blend |
| US9315724B2 (en) * | 2011-06-14 | 2016-04-19 | Basf Se | Metal complexes comprising azabenzimidazole carbene ligands and the use thereof in OLEDs |
| EP2736911A1 (en) * | 2011-07-27 | 2014-06-04 | Merck Patent GmbH | Small molecules and their use as organic semiconductors |
| GB201118997D0 (en) * | 2011-11-03 | 2011-12-14 | Cambridge Display Tech Ltd | Electronic device and method |
| TW201348241A (zh) * | 2011-12-30 | 2013-12-01 | Imp Innovations Ltd | 有機半導體材料之非習用性化學摻雜 |
| GB201203159D0 (en) * | 2012-02-23 | 2012-04-11 | Smartkem Ltd | Organic semiconductor compositions |
| KR101952706B1 (ko) * | 2012-07-24 | 2019-02-28 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함하는 유기 발광 표시 장치 |
| US20140116509A1 (en) * | 2012-10-30 | 2014-05-01 | Sean Andrew Vail | Solid-State Dye-Sensitized Solar Cell Using Oxidative Dopant |
| GB201502113D0 (en) * | 2015-02-09 | 2015-03-25 | Cambridge Display Tech Ltd | Solution for a semiconducting layer of an organic electronic device |
-
2013
- 2013-07-15 GB GBGB1312609.9A patent/GB201312609D0/en not_active Ceased
-
2014
- 2014-07-11 US US14/905,091 patent/US9793504B2/en not_active Expired - Fee Related
- 2014-07-11 CN CN201480040221.XA patent/CN105378960B/zh not_active Expired - Fee Related
- 2014-07-11 GB GB1522168.2A patent/GB2529600A/en not_active Withdrawn
- 2014-07-11 KR KR1020167003360A patent/KR20160031510A/ko not_active Withdrawn
- 2014-07-11 JP JP2016526687A patent/JP6356240B2/ja not_active Expired - Fee Related
- 2014-07-11 DE DE112014003272.7T patent/DE112014003272T5/de not_active Withdrawn
- 2014-07-11 WO PCT/GB2014/000283 patent/WO2015008015A1/en not_active Ceased
- 2014-07-15 TW TW103124308A patent/TW201517339A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI882238B (zh) * | 2021-09-17 | 2025-05-01 | 日商國際電氣股份有限公司 | 基板處理方法、程式、基板處理裝置及半導體裝置之製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2529600A (en) | 2016-02-24 |
| JP2016531423A (ja) | 2016-10-06 |
| CN105378960A (zh) | 2016-03-02 |
| WO2015008015A1 (en) | 2015-01-22 |
| KR20160031510A (ko) | 2016-03-22 |
| US9793504B2 (en) | 2017-10-17 |
| CN105378960B (zh) | 2018-09-18 |
| GB201312609D0 (en) | 2013-08-28 |
| US20160149147A1 (en) | 2016-05-26 |
| DE112014003272T5 (de) | 2016-04-14 |
| JP6356240B2 (ja) | 2018-07-11 |
| GB201522168D0 (en) | 2016-01-27 |
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