DE112014003272T5 - Elektrodenoberflächenmodifizierungsschicht für elektronische Vorrichtungen - Google Patents

Elektrodenoberflächenmodifizierungsschicht für elektronische Vorrichtungen Download PDF

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Publication number
DE112014003272T5
DE112014003272T5 DE112014003272.7T DE112014003272T DE112014003272T5 DE 112014003272 T5 DE112014003272 T5 DE 112014003272T5 DE 112014003272 T DE112014003272 T DE 112014003272T DE 112014003272 T5 DE112014003272 T5 DE 112014003272T5
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DE
Germany
Prior art keywords
group
carbon atoms
electrode
tfd
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112014003272.7T
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German (de)
English (en)
Inventor
Christopher Newsome
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambridge Display Technology Ltd
Original Assignee
Cambridge Display Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Display Technology Ltd filed Critical Cambridge Display Technology Ltd
Publication of DE112014003272T5 publication Critical patent/DE112014003272T5/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
DE112014003272.7T 2013-07-15 2014-07-11 Elektrodenoberflächenmodifizierungsschicht für elektronische Vorrichtungen Withdrawn DE112014003272T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1312609.9A GB201312609D0 (en) 2013-07-15 2013-07-15 Method
GB1312609.9 2013-07-15
PCT/GB2014/000283 WO2015008015A1 (en) 2013-07-15 2014-07-11 Electrode surface modification layer for electronic devices

Publications (1)

Publication Number Publication Date
DE112014003272T5 true DE112014003272T5 (de) 2016-04-14

Family

ID=49081267

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112014003272.7T Withdrawn DE112014003272T5 (de) 2013-07-15 2014-07-11 Elektrodenoberflächenmodifizierungsschicht für elektronische Vorrichtungen

Country Status (8)

Country Link
US (1) US9793504B2 (enExample)
JP (1) JP6356240B2 (enExample)
KR (1) KR20160031510A (enExample)
CN (1) CN105378960B (enExample)
DE (1) DE112014003272T5 (enExample)
GB (2) GB201312609D0 (enExample)
TW (1) TW201517339A (enExample)
WO (1) WO2015008015A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10115903B2 (en) * 2012-12-18 2018-10-30 Merck Patent Gmbh Emitter having a condensed ring system
JP7387685B2 (ja) * 2021-09-17 2023-11-28 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、プログラム、および基板処理装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045285B1 (en) * 1996-11-05 2006-05-16 Clinical Micro Sensors, Inc. Electronic transfer moieties attached to peptide nucleic acids
US6501217B2 (en) * 1998-02-02 2002-12-31 International Business Machines Corporation Anode modification for organic light emitting diodes
JP4364586B2 (ja) * 2003-08-27 2009-11-18 Ｔｄｋ株式会社 有機電界効果トランジスタ及びその製造方法
US7642038B2 (en) * 2004-03-24 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus
US8187746B2 (en) * 2008-05-16 2012-05-29 Uchicago Argonne, Llc Surface modification agents for lithium batteries
KR20100091663A (ko) * 2009-02-11 2010-08-19 삼성전자주식회사 표면개질제, 이를 사용하여 제조된 적층 구조, 그 구조의 제조방법 및 이를 포함하는 트랜지스터
US8637857B2 (en) * 2010-04-06 2014-01-28 Basf Se Substituted carbazole derivatives and use thereof in organic electronics
GB201013820D0 (en) * 2010-08-18 2010-09-29 Cambridge Display Tech Ltd Low contact resistance organic thin film transistors
GB201021277D0 (en) 2010-12-15 2011-01-26 Cambridge Display Tech Ltd Semiconductor blend
US9315724B2 (en) * 2011-06-14 2016-04-19 Basf Se Metal complexes comprising azabenzimidazole carbene ligands and the use thereof in OLEDs
CN103703007A (zh) * 2011-07-27 2014-04-02 默克专利股份有限公司 小分子及其作为有机半导体的用途
GB201118997D0 (en) * 2011-11-03 2011-12-14 Cambridge Display Tech Ltd Electronic device and method
WO2013098648A1 (en) * 2011-12-30 2013-07-04 Imperial Innovations Ltd. Unconventional chemical doping of organic semiconducting materials
GB201203159D0 (en) * 2012-02-23 2012-04-11 Smartkem Ltd Organic semiconductor compositions
KR101952706B1 (ko) * 2012-07-24 2019-02-28 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 유기 발광 표시 장치
US20140116509A1 (en) * 2012-10-30 2014-05-01 Sean Andrew Vail Solid-State Dye-Sensitized Solar Cell Using Oxidative Dopant
GB201502113D0 (en) * 2015-02-09 2015-03-25 Cambridge Display Tech Ltd Solution for a semiconducting layer of an organic electronic device

Also Published As

Publication number Publication date
GB201522168D0 (en) 2016-01-27
JP6356240B2 (ja) 2018-07-11
GB201312609D0 (en) 2013-08-28
US20160149147A1 (en) 2016-05-26
US9793504B2 (en) 2017-10-17
WO2015008015A1 (en) 2015-01-22
GB2529600A (en) 2016-02-24
CN105378960A (zh) 2016-03-02
CN105378960B (zh) 2018-09-18
TW201517339A (zh) 2015-05-01
KR20160031510A (ko) 2016-03-22
JP2016531423A (ja) 2016-10-06

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee