KR20160023577A - 유기 el 소자 봉지막의 형성 방법 - Google Patents

유기 el 소자 봉지막의 형성 방법 Download PDF

Info

Publication number
KR20160023577A
KR20160023577A KR1020150116667A KR20150116667A KR20160023577A KR 20160023577 A KR20160023577 A KR 20160023577A KR 1020150116667 A KR1020150116667 A KR 1020150116667A KR 20150116667 A KR20150116667 A KR 20150116667A KR 20160023577 A KR20160023577 A KR 20160023577A
Authority
KR
South Korea
Prior art keywords
film
organic
forming
layer
laminated
Prior art date
Application number
KR1020150116667A
Other languages
English (en)
Korean (ko)
Inventor
노보루 야스모토
아키오 나이토
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20160023577A publication Critical patent/KR20160023577A/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H01L51/5237—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H01L21/31056—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching the removal being a selective chemical etching step, e.g. selective dry etching through a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H01L51/0017—
    • H01L51/56—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H01L2251/56—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
KR1020150116667A 2014-08-21 2015-08-19 유기 el 소자 봉지막의 형성 방법 KR20160023577A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014168458A JP6486033B2 (ja) 2014-08-21 2014-08-21 有機ｅｌ素子封止膜の形成方法
JPJP-P-2014-168458 2014-08-21

Publications (1)

Publication Number Publication Date
KR20160023577A true KR20160023577A (ko) 2016-03-03

Family

ID=55422680

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150116667A KR20160023577A (ko) 2014-08-21 2015-08-19 유기 el 소자 봉지막의 형성 방법

Country Status (4)

Country Link
JP (1) JP6486033B2 (zh)
KR (1) KR20160023577A (zh)
CN (1) CN105390622B (zh)
TW (1) TWI658517B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200007578A (ko) * 2018-07-13 2020-01-22 주식회사 에스에프에이 디스플레이용 기판 증착 시스템
KR20210017706A (ko) * 2019-08-09 2021-02-17 순천향대학교 산학협력단 Rtp 방법을 이용한 봉지층의 제조방법
CN114430012A (zh) * 2020-10-29 2022-05-03 东京毅力科创株式会社 有机电致发光面板的制造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6636865B2 (ja) * 2016-06-24 2020-01-29 株式会社ジャパンディスプレイ 表示装置の製造方法及び表示装置
CN109860410B (zh) * 2017-11-30 2024-06-25 京东方科技集团股份有限公司 显示面板及其封装方法、显示装置
CN110165074B (zh) * 2019-04-30 2021-08-06 武汉天马微电子有限公司 显示面板及其制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007005189A (ja) 2005-06-24 2007-01-11 Tokki Corp 有機膜形成用マスク，封止膜形成装置並びに封止膜の形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6866901B2 (en) * 1999-10-25 2005-03-15 Vitex Systems, Inc. Method for edge sealing barrier films
JP4185341B2 (ja) * 2002-09-25 2008-11-26 パイオニア株式会社 多層バリア膜構造、有機エレクトロルミネッセンス表示パネル及び製造方法
JP2005034831A (ja) * 2003-07-01 2005-02-10 Sumitomo Heavy Ind Ltd バリア多層膜及びその製造方法
US20090075034A1 (en) * 2007-09-19 2009-03-19 Nobuhiro Nishita Patterning method and display device
JP2014002880A (ja) * 2012-06-18 2014-01-09 Canon Inc 有機ｅｌ装置の製造方法
JP6186697B2 (ja) * 2012-10-29 2017-08-30 セイコーエプソン株式会社 有機ｅｌ装置の製造方法、有機ｅｌ装置、電子機器
KR102037051B1 (ko) * 2012-12-29 2019-10-28 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007005189A (ja) 2005-06-24 2007-01-11 Tokki Corp 有機膜形成用マスク，封止膜形成装置並びに封止膜の形成方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200007578A (ko) * 2018-07-13 2020-01-22 주식회사 에스에프에이 디스플레이용 기판 증착 시스템
KR20210017706A (ko) * 2019-08-09 2021-02-17 순천향대학교 산학협력단 Rtp 방법을 이용한 봉지층의 제조방법
CN114430012A (zh) * 2020-10-29 2022-05-03 东京毅力科创株式会社 有机电致发光面板的制造方法
KR20220057433A (ko) * 2020-10-29 2022-05-09 도쿄엘렉트론가부시키가이샤 유기 el 패널의 제조 방법

Also Published As

Publication number Publication date
TW201622020A (zh) 2016-06-16
CN105390622A (zh) 2016-03-09
TWI658517B (zh) 2019-05-01
JP6486033B2 (ja) 2019-03-20
JP2016046035A (ja) 2016-04-04
CN105390622B (zh) 2018-09-07

Similar Documents

Publication Publication Date Title
KR20160023577A (ko) 유기 el 소자 봉지막의 형성 방법
US9614185B2 (en) Display panel, manufacturing method thereof, and display device
TWI669835B (zh) 發光裝置
JP5677435B2 (ja) 有機ｅｌ表示パネルとその製造方法
US10199438B2 (en) Top-emitting organic electroluminescent display panel, manufacturing method thereof and display device
KR101699093B1 (ko) 유기 ｅｌ 표시 패널과 그 제조 방법
JP5543441B2 (ja) 有機発光素子とその製造方法、有機表示パネル、有機表示装置
KR102185577B1 (ko) Oled 기판 및 그 제조 방법
CN103325952A (zh) 一种oled器件及其制造方法、显示装置
CN109904346B (zh) 显示装置、显示面板及其制作方法
CN110649078A (zh) 一种显示用基板及显示装置
JP2009038243A (ja) 有機ｅｌ表示装置
US20190242003A1 (en) Thin film deposition apparatus and thin film deposition method using the same
CN109037277B (zh) 一种oled显示面板的制备方法及oled显示面板、显示装置
KR101676764B1 (ko) 유기발광 소자 및 이의 제조방법
KR101835920B1 (ko) 유기 발광 다이오드의 박막 캡슐화
JP5557653B2 (ja) 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法
JPWO2014162395A1 (ja) 発光装置
CN109103235B (zh) 有机发光二极管显示面板及其制作方法、显示装置
US20160133869A1 (en) Display device and manufacturing method for the same
KR102086393B1 (ko) 유기 발광 표시 장치 및 이의 제조 방법
KR102670023B1 (ko) 유기발광 표시장치 및 제조방법
JP2008108680A (ja) 有機ｅｌ素子の製造方法
KR20140087435A (ko) 유기전계발광표시장치 및 그 제조방법
JP2008240117A (ja) 透明導電膜の製造方法、表示装置の製造方法及びスパッタリング装置

Legal Events

Date Code Title Description
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
AMND Amendment