KR20150108321A - 기판 처리 방법 및 기판 처리 장치 - Google Patents
기판 처리 방법 및 기판 처리 장치 Download PDFInfo
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- KR20150108321A KR20150108321A KR1020150034305A KR20150034305A KR20150108321A KR 20150108321 A KR20150108321 A KR 20150108321A KR 1020150034305 A KR1020150034305 A KR 1020150034305A KR 20150034305 A KR20150034305 A KR 20150034305A KR 20150108321 A KR20150108321 A KR 20150108321A
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
도 2 는, 도 1 에 나타내는 기판 처리 장치에 구비된 챔버 내부의 단면도이다.
도 3 은, 도 2 에 나타내는 기판 유지 회전 유닛 및 핫 플레이트의 평면도이다.
도 4 는, 도 3 을 절단면선 Ⅳ-Ⅳ 로 절단하였을 때의 단면도이다.
도 5 는, 도 3 을 절단면선 Ⅳ-Ⅳ 로 절단하였을 때의 단면도이다.
도 6 은, 도 2 에 나타내는 핫 플레이트 및 플레이트 지지축의 주요부를 확대하여 나타내는 단면도이다.
도 7 은, 도 2 에 나타내는 핫 플레이트 및 플레이트 지지축의 주요부를 확대하여 나타내는 단면도이다.
도 8 은, 고정 핀의 구성을 모식적으로 나타내는 단면도이다.
도 9 는, 가동 핀의 구성을 모식적으로 나타내는 단면도이다.
도 10 은, 처리 유닛의 처리 대상의 기판의 표면을 확대하여 나타내는 단면도이다.
도 11 은, 처리 유닛으로 실행되는 약액 처리의 처리예에 대해 설명하기 위한 공정도이다.
도 12a ∼ 12h 는, 도 11 의 처리예를 설명하기 위한 모식도이다.
도 13a, 13b 는, 도 11 의 처리예에 있어서의 기판의 상면의 상태를 설명하기 위한 모식적인 단면도이다.
도 14 및 도 15 는, 핫 플레이트 및 플레이트 지지축의 변형예의 주요부를 확대하여 나타내는 단면도이다.
도 16 은, 본 발명의 다른 실시형태에 관련된 기판 처리 장치의 구성을 나타내는 모식적인 단면도이다.
Claims (10)
- 기판을 유지하기 위한 기판 유지 유닛과, 상기 기판을 하방으로부터 가열하기 위한 핫 플레이트를 구비하는 기판 처리 장치에 있어서 실행되는 기판 처리 방법으로서,
상기 핫 플레이트가 상기 기판 유지 유닛으로부터 하방으로 퇴피하는 퇴피 위치에 배치된 상태에서, 상기 기판 유지 유닛에 의해 유지되어 있는 상기 기판의 상면에 처리액을 공급하는 처리액 공급 공정과,
상기 처리액 공급 공정에 병행하여, 상기 핫 플레이트의 상면에 당해 상면을 덮는 보호액의 액막을 형성하는 보호액 액막 형성 공정과,
상기 핫 플레이트를 상기 기판의 하면에 근접 또는 접촉시키면서, 당해 핫 플레이트에 의해 상기 기판을 가열하는 기판 가열 공정을 포함하는, 기판 처리 방법. - 제 1 항에 있어서,
상기 보호액 액막 형성 공정은, 상기 핫 플레이트의 상면에 보호액을 연속적으로 공급하는 공정을 포함하는, 기판 처리 방법. - 제 1 항 또는 제 2 항에 있어서,
상기 보호액 액막 형성 공정은, 상기 핫 플레이트의 상면에 형성된 보호액 토출구로부터 보호액을 토출하는 공정을 포함하는, 기판 처리 방법. - 제 1 항 또는 제 2 항에 있어서,
상기 보호액 액막 형성 공정은, 보호액 노즐로부터 상기 핫 플레이트의 상면에 보호액을 토출하는 공정을 포함하는, 기판 처리 방법. - 제 1 항 또는 제 2 항에 있어서,
상기 처리액 공급 공정은, 상기 기판의 상면에 약액 또는 린스액을 공급하는 공정과, 상기 기판의 상면 상의 약액 또는 린스액을 유기 용제의 액막으로 치환하기 위해, 상기 기판의 상면에 유기 용제를 공급하는 유기 용매 공급 공정을 포함하고,
상기 기판 가열 공정에서는, 상기 유기 용매 공급 공정에 의해 상기 기판의 상면에 형성된 상기 유기 용매의 액막이 상기 기판의 상면에서 가열되는, 기판 처리 방법. - 기판을 수평 자세로 유지하기 위한 기판 유지 유닛과,
상기 기판 유지 유닛에 유지된 기판의 상면을 향하여 처리액을 공급하는 처리액 공급 유닛과,
상기 기판의 하면에 근접 또는 접촉시킨 상태에서, 상기 기판을 하방으로부터 가열하기 위한 핫 플레이트와,
상기 처리액 공급 유닛에 의한 상기 처리액의 공급과 병행하여, 상기 핫 플레이트의 상면에 보호액의 액막을 형성하기 위해, 상기 핫 플레이트의 상면에 보호액을 공급하는 보호액 공급 유닛을 포함하는, 기판 처리 장치. - 제 6 항에 있어서,
상기 핫 플레이트는,
당해 핫 플레이트의 상면에 개구되는 보호액 토출구와,
당해 보호액 토출구에 연통되고, 상기 보호액 토출구에 공급되는 보호액이 유통하는 보호액 유통로와,
상기 보호액 토출구와 상기 보호액 유통로를 구획하고, 상기 핫 플레이트에 고정적으로 형성된 보호액 배관과,
상기 보호액 유통로에서 상하동 가능하게, 또한 상기 보호액 토출구를 폐색 가능하게 형성된 폐색 부재를 갖고,
상기 폐색 부재는, 상기 보호액 토출구로부터 보호액을 토출시키지 않을 때에는, 상기 보호액 토출구를 폐색하는 폐색 위치에 배치되고, 또한 상기 보호액 토출구로부터 보호액을 토출시킬 때에는, 상기 핫 플레이트의 상면보다 상방의 부상 위치에 배치되고,
상기 부상 위치에 위치하는 상태에서, 상기 폐색 부재는, 상기 보호액 토출구로부터 토출되는 보호액을 상기 핫 플레이트의 외주부를 향하여 안내하는, 기판 처리 장치. - 제 7 항에 있어서,
상기 폐색 부재는, 상기 보호액 유통로에서 자유롭게 상하동할 수 있도록 형성되어 있고,
상기 폐색 부재는, 상기 보호액 유통로를 유통하는 보호액으로부터 압력을 받아 상기 부상 위치에 배치되는, 기판 처리 장치. - 제 7 항 또는 제 8 항에 있어서,
상기 폐색 부재는, 상기 폐색 위치에 있어서, 당해 폐색 부재의 상면이 상기 핫 플레이트의 상기 상면과 동일 평면 상에 있거나, 혹은 상기 핫 플레이트의 상면으로부터 하방으로 퇴피되어 있는, 기판 처리 장치. - 제 6 항 또는 제 7 항에 있어서,
상기 처리액 공급 유닛은, 약액 또는 린스액을 함유하는 제 1 처리액을 상기 기판을 향하여 공급하는 제 1 처리액 공급 유닛과, 유기 용제를 함유하는 제 2 처리액을 상기 기판을 향하여 공급하고, 당해 제 2 처리액의 액막을 상기 기판의 상면에 형성하는 제 2 처리액 공급 유닛을 포함하고,
상기 핫 플레이트는, 상기 제 2 처리액의 액막이 상기 기판의 상면에 형성된 상태에서 상기 기판을 가열하는, 기판 처리 장치.
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