KR20150108315A - 반도체 발광 소자 - Google Patents

반도체 발광 소자 Download PDF

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Publication number
KR20150108315A
KR20150108315A KR1020150031582A KR20150031582A KR20150108315A KR 20150108315 A KR20150108315 A KR 20150108315A KR 1020150031582 A KR1020150031582 A KR 1020150031582A KR 20150031582 A KR20150031582 A KR 20150031582A KR 20150108315 A KR20150108315 A KR 20150108315A
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KR
South Korea
Prior art keywords
electrode
layer
semiconductor layer
region
light emitting
Prior art date
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Ceased
Application number
KR1020150031582A
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English (en)
Korean (ko)
Inventor
도시히데 이토
히로시 오노
신야 누노우에
Original Assignee
가부시끼가이샤 도시바
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Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20150108315A publication Critical patent/KR20150108315A/ko
Ceased legal-status Critical Current

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    • H01L33/36—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H01L33/22—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H01L2924/12041—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Led Devices (AREA)
KR1020150031582A 2014-03-17 2015-03-06 반도체 발광 소자 Ceased KR20150108315A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-054157 2014-03-17
JP2014054157A JP6302303B2 (ja) 2014-03-17 2014-03-17 半導体発光素子

Publications (1)

Publication Number Publication Date
KR20150108315A true KR20150108315A (ko) 2015-09-25

Family

ID=52577783

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150031582A Ceased KR20150108315A (ko) 2014-03-17 2015-03-06 반도체 발광 소자

Country Status (6)

Country Link
US (1) US20150263223A1 (cg-RX-API-DMAC10.html)
EP (1) EP2922102A1 (cg-RX-API-DMAC10.html)
JP (1) JP6302303B2 (cg-RX-API-DMAC10.html)
KR (1) KR20150108315A (cg-RX-API-DMAC10.html)
CN (1) CN104934511A (cg-RX-API-DMAC10.html)
TW (1) TW201547055A (cg-RX-API-DMAC10.html)

Cited By (1)

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KR20180009436A (ko) * 2016-07-18 2018-01-29 삼성전자주식회사 반도체 발광소자

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JP2017533574A (ja) 2014-09-18 2017-11-09 インテル・コーポレーション シリコンｃｍｏｓ互換性半導体装置における欠陥伝播制御のための傾斜側壁カット面を有するウルツ鉱ヘテロエピタキシャル構造物
WO2016048328A1 (en) 2014-09-25 2016-03-31 Intel Corporation Iii-n epitaxial device structures on free standing silicon mesas
US10573647B2 (en) 2014-11-18 2020-02-25 Intel Corporation CMOS circuits using n-channel and p-channel gallium nitride transistors
CN106922200B (zh) 2014-12-18 2021-11-09 英特尔公司 N沟道氮化镓晶体管
US10211327B2 (en) 2015-05-19 2019-02-19 Intel Corporation Semiconductor devices with raised doped crystalline structures
EP3314659A4 (en) 2015-06-26 2019-01-23 INTEL Corporation HETEROEPITAXISTRUCTURES WITH HIGH-TEMPERATURE-RESISTANT SUBSTRATE INTERMEDIATE MATERIAL
WO2017111869A1 (en) 2015-12-24 2017-06-29 Intel Corporation Transition metal dichalcogenides (tmdcs) over iii-nitride heteroepitaxial layers
CN105702821B (zh) * 2016-03-29 2018-01-30 苏州晶湛半导体有限公司 半导体发光器件及其制造方法
TWI720053B (zh) * 2016-11-09 2021-03-01 晶元光電股份有限公司 發光元件及其製造方法
US11233053B2 (en) 2017-09-29 2022-01-25 Intel Corporation Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication
WO2019066935A1 (en) 2017-09-29 2019-04-04 Intel Corporation REDUCED CONTACT RESISTANCE GROUP III (N-N) NITRIDE DEVICES AND METHODS OF MAKING THE SAME
US11195973B1 (en) * 2019-05-17 2021-12-07 Facebook Technologies, Llc III-nitride micro-LEDs on semi-polar oriented GaN
US11175447B1 (en) 2019-08-13 2021-11-16 Facebook Technologies, Llc Waveguide in-coupling using polarized light emitting diodes
EP3944344B1 (en) 2020-07-21 2022-10-19 Nichia Corporation Light emitting element and method of manufacturing light emitting element
CN120019737A (zh) * 2022-10-06 2025-05-16 艾迈斯-欧司朗国际有限责任公司 发光器件
CN223207472U (zh) * 2024-09-26 2025-08-08 成都辰显光电有限公司 显示面板及显示装置

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JP2004071657A (ja) * 2002-08-01 2004-03-04 Nec Corp Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体基板およびｉｉｉ族窒化物半導体素子の製造方法
US9279193B2 (en) * 2002-12-27 2016-03-08 Momentive Performance Materials Inc. Method of making a gallium nitride crystalline composition having a low dislocation density
JP4925580B2 (ja) * 2004-12-28 2012-04-25 三菱化学株式会社 窒化物半導体発光素子およびその製造方法
JP4842827B2 (ja) * 2005-05-19 2011-12-21 パナソニック株式会社 窒化物半導体装置及びその製造方法
JP4605193B2 (ja) * 2007-07-27 2011-01-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
JP2009081374A (ja) * 2007-09-27 2009-04-16 Rohm Co Ltd 半導体発光素子
KR101761385B1 (ko) * 2010-07-12 2017-08-04 엘지이노텍 주식회사 발광 소자
JP5333382B2 (ja) * 2010-08-27 2013-11-06 豊田合成株式会社 発光素子
EP2442374B1 (en) * 2010-10-12 2016-09-21 LG Innotek Co., Ltd. Light emitting device
US8963290B2 (en) * 2010-12-28 2015-02-24 Dowa Electronics Materials Co., Ltd. Semiconductor device and manufacturing method therefor
TWI435477B (zh) * 2010-12-29 2014-04-21 Lextar Electronics Corp 高亮度發光二極體
JP5050109B2 (ja) * 2011-03-14 2012-10-17 株式会社東芝 半導体発光素子
KR101827975B1 (ko) * 2011-10-10 2018-03-29 엘지이노텍 주식회사 발광소자
JP5983125B2 (ja) * 2012-07-18 2016-08-31 日亜化学工業株式会社 半導体発光素子の製造方法
JP6052962B2 (ja) * 2012-08-03 2016-12-27 スタンレー電気株式会社 半導体発光装置
JP6287317B2 (ja) * 2013-02-28 2018-03-07 日亜化学工業株式会社 半導体発光素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180009436A (ko) * 2016-07-18 2018-01-29 삼성전자주식회사 반도체 발광소자

Also Published As

Publication number Publication date
EP2922102A1 (en) 2015-09-23
TW201547055A (zh) 2015-12-16
CN104934511A (zh) 2015-09-23
JP2015177135A (ja) 2015-10-05
JP6302303B2 (ja) 2018-03-28
US20150263223A1 (en) 2015-09-17

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