JP4842827B2 - 窒化物半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 167
- 150000004767 nitrides Chemical class 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 136
- 238000003776 cleavage reaction Methods 0.000 claims description 52
- 230000007017 scission Effects 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 35
- 229910052799 carbon Inorganic materials 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 68
- 229910002601 GaN Inorganic materials 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 17
- 229910002704 AlGaN Inorganic materials 0.000 description 11
- 239000013078 crystal Substances 0.000 description 8
- 238000005253 cladding Methods 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 235000005811 Viola adunca Nutrition 0.000 description 2
- 240000009038 Viola odorata Species 0.000 description 2
- 235000013487 Viola odorata Nutrition 0.000 description 2
- 235000002254 Viola papilionacea Nutrition 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
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- Optics & Photonics (AREA)
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- Led Devices (AREA)
Description
以下、図面を参照しながら、本発明による窒化物半導体装置及びその製造方法の第1の実施形態を説明する。
図6および図7を参照しながら、本発明による窒化物半導体装置の他の実施形態を説明する。
10a バー
12 n型GaN層
14 n型AlGaNクラッド層
16 GaN光ガイド層
18 InGaN多重量子井戸層
20 InGaN中間層
22 p型AlGaNキャップ層
24 p型GaN光ガイド層
26 p型AlGaNクラッド層
28 p型GaNコンタクト層
30 SiO2層
32 p側電極(Pd/Pt)
34 n側電極(Ti/Pt/Au)
36 SiO2層
40a 基板裏面における粗面領域
40b 基板裏面における平坦領域
50 へき開ガイド
100 半導体積層構造
Claims (19)
- n型不純物を含有する窒化物系半導体基板と、
前記半導体基板の主面に形成され、p型領域およびn型領域を含む半導体積層構造と、
前記半導体積層構造に含まれる前記p型領域の一部に接触するp側電極と、
前記半導体基板の裏面に設けられたn側電極と、
を備えた窒化物半導体積層体であって、
前記半導体基板の裏面は、平坦領域と粗面領域とを含んでおり、
前記n側電極は、前記粗面領域の少なくとも一部を覆っており、
前記半導体積層構造は、前記半導体積層構造の上面において前記平坦領域に対応する領域でへき開を行うべきライン上に一列に並んだ複数の凹部を有する、窒化物半導体積層体。 - 前記半導体基板の裏面における前記平坦領域は、20μm以上の幅を有する帯形状を有しており、前記粗面領域の周囲に位置している、請求項1に記載の窒化物半導体積層体。
- 前記半導体基板の裏面と前記n側電極との接触領域の輪郭は、前記平坦領域と前記粗面領域との境界と整合している、請求項1に記載の窒化物半導体積層体。
- 前記半導体基板の裏面における前記粗面領域は、研磨加工面または清浄化処理面である請求項1に記載の窒化物半導体積層体。
- 前記半導体基板の前記主面は+C極性面である、請求項1に記載の窒化物半導体積層体。
- 前記半導体基板の裏面における前記平坦領域は−C極性面である、請求項1に記載の窒化物半導体積層体。
- 前記半導体基板の裏面における前記粗面領域は、エッチングによって形成された複数の凹部または凸部を有している、請求項1に記載の窒化物半導体積層体。
- 前記半導体基板の裏面における前記粗面領域には、異なる面方位を有する複数のファセットが形成されている、請求項1に記載の窒化物半導体積層体。
- 前記半導体基板の裏面における前記粗面領域の凹凸段差は、10nm以上1μm以下の範囲にあり、前記平坦領域の凹凸段差は、10nm以下である請求項1に記載の窒化物半導体積層体。
- 前記n側電極は、前記半導体基板の裏面における前記粗面領域の全体を覆っている、請求項1に記載の窒化物半導体積層体。
- 前記半導体基板の裏面における前記平坦領域は、へき開位置に接するように配置されている、請求項1に記載の窒化物半導体積層体。
- 前記n側電極は、Ti、Al、Pt、Au、Mo、Sn、In、Ni、Cr、Nb、Ba、Ag、Rh、Ir、Ru、およびHfからなる群から選択された少なくとも1種類の金属または合金から形成された層を有している請求項1に記載の窒化物半導体積層体。
- 前記n側電極のコンタクト抵抗率は、5×10-4Ω・cm2以下である請求項1に記載
の窒化物半導体積層体。 - 前記半導体基板の裏面は研磨加工面から構成されている請求項1に記載の窒化物半導体積層体。
- n型不純物を含有する窒化物系半導体基板を用意する工程と、
p型領域およびn型領域を含む半導体積層構造を前記半導体基板の主面に形成する工程と、
前記半導体積層構造に含まれる前記p型領域にp側電極を形成する工程と、
窒素面を含む前記半導体基板の裏面にn側電極を形成する工程と、
を含む窒化物半導体装置の製造方法であって、
前記半導体基板の裏面にn側電極を形成する前に、前記裏面に平坦領域と粗面領域を形成する工程と、
前記n側電極を形成した後、前記半導体積層構造の上面において前記平坦領域に対応する領域でへき開を行うべきライン上に一列に並んだ複数の凹部をへき開ガイドとし、へき開面が前記平坦領域を通るように前記半導体基板のへき開を行う工程と、
を含む、窒化物半導体装置の製造方法。 - 前記半導体基板の裏面に平坦領域と粗面領域を形成した後、前記半導体基板の裏面にn側電極を形成する前に、前記半導体基板の裏面における炭素濃度を低減する工程を行なう、請求項15に記載の窒化物半導体装置の製造方法。
- 前記炭素濃度を低減する工程は、
前記半導体基板の裏面に酸化シリコン膜を堆積する工程と、
前記酸化シリコン膜を除去する工程と
を含む請求項15に記載の窒化物半導体装置の製造方法。 - 前記粗面領域を形成する工程は、
前記半導体基板の裏面のうち、前記粗面領域が形成されるべき部分を露出させる開口部を備えたマスク層を前記半導体基板の裏面に形成する工程と、
前記半導体基板の裏面のうち、前記粗面領域が形成されるべき部分にエッチング処理を行う工程と、
を含む請求項15に記載の窒化物半導体装置の製造方法。 - 前記n側電極を形成する工程は、
前記半導体基板の裏面に前記マスク層を覆うように金属電極層を堆積する工程と、
前記金属電極層のうち前記マスク層上に位置する部分を、前記マスク層とともに除去することにより、前記金属電極層を前記n側電極にパターニングする工程と、
を含む請求項18に記載の窒化物半導体装置の製造方法。
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