KR20150090833A - 반도체 웨이퍼의 가공 방법 - Google Patents

반도체 웨이퍼의 가공 방법 Download PDF

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Publication number
KR20150090833A
KR20150090833A KR1020150004004A KR20150004004A KR20150090833A KR 20150090833 A KR20150090833 A KR 20150090833A KR 1020150004004 A KR1020150004004 A KR 1020150004004A KR 20150004004 A KR20150004004 A KR 20150004004A KR 20150090833 A KR20150090833 A KR 20150090833A
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KR
South Korea
Prior art keywords
passivation film
laser beam
semiconductor wafer
street
dividing groove
Prior art date
Application number
KR1020150004004A
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English (en)
Korean (ko)
Inventor
치카라 아이카와
겐타로 오다나카
도시오 츠치야
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20150090833A publication Critical patent/KR20150090833A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
KR1020150004004A 2014-01-29 2015-01-12 반도체 웨이퍼의 가공 방법 KR20150090833A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014014134A JP2015142015A (ja) 2014-01-29 2014-01-29 半導体ウェーハの加工方法
JPJP-P-2014-014134 2014-01-29

Publications (1)

Publication Number Publication Date
KR20150090833A true KR20150090833A (ko) 2015-08-06

Family

ID=53695045

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150004004A KR20150090833A (ko) 2014-01-29 2015-01-12 반도체 웨이퍼의 가공 방법

Country Status (5)

Country Link
JP (1) JP2015142015A (zh)
KR (1) KR20150090833A (zh)
CN (1) CN104810323A (zh)
SG (1) SG10201500436XA (zh)
TW (1) TW201532135A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6564301B2 (ja) * 2015-10-26 2019-08-21 東京応化工業株式会社 支持体分離方法
JP2018060988A (ja) * 2016-10-04 2018-04-12 日本特殊陶業株式会社 蓋部材、発光装置、およびこれらの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0821623B2 (ja) * 1985-09-20 1996-03-04 株式会社日立製作所 レ−ザ処理方法
US6562698B2 (en) * 1999-06-08 2003-05-13 Kulicke & Soffa Investments, Inc. Dual laser cutting of wafers
US20070272666A1 (en) * 2006-05-25 2007-11-29 O'brien James N Infrared laser wafer scribing using short pulses
JP2011165766A (ja) * 2010-02-05 2011-08-25 Disco Abrasive Syst Ltd 光デバイスウエーハの加工方法
JP2013102039A (ja) * 2011-11-08 2013-05-23 Disco Abrasive Syst Ltd 半導体ウエーハの加工方法

Also Published As

Publication number Publication date
CN104810323A (zh) 2015-07-29
JP2015142015A (ja) 2015-08-03
TW201532135A (zh) 2015-08-16
SG10201500436XA (en) 2015-08-28

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