KR20140139595A - 내장형 레벨 시프터 및 프로그래머블 상승 엣지 및 펄스 폭을 갖는 펄스 클록 발생 로직 - Google Patents

내장형 레벨 시프터 및 프로그래머블 상승 엣지 및 펄스 폭을 갖는 펄스 클록 발생 로직 Download PDF

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Publication number
KR20140139595A
KR20140139595A KR1020147029964A KR20147029964A KR20140139595A KR 20140139595 A KR20140139595 A KR 20140139595A KR 1020147029964 A KR1020147029964 A KR 1020147029964A KR 20147029964 A KR20147029964 A KR 20147029964A KR 20140139595 A KR20140139595 A KR 20140139595A
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KR
South Korea
Prior art keywords
pulse
pulse clock
clock
rising edge
delay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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English (en)
Korean (ko)
Inventor
샤오핑 제
치아밍 차이
스티븐 에드워드 리레스
람 브이. 엔구옌
제프리 허버트 피셔
Original Assignee
퀄컴 인코포레이티드
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Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Pulse Circuits (AREA)
KR1020147029964A 2012-03-29 2013-03-28 내장형 레벨 시프터 및 프로그래머블 상승 엣지 및 펄스 폭을 갖는 펄스 클록 발생 로직 Withdrawn KR20140139595A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/433,891 2012-03-29
US13/433,891 US8638153B2 (en) 2012-03-29 2012-03-29 Pulse clock generation logic with built-in level shifter and programmable rising edge and pulse width
PCT/US2013/034414 WO2013149040A1 (en) 2012-03-29 2013-03-28 A pulse clock generation logic with built-in level shifter and programmable rising edge and pulse width

Publications (1)

Publication Number Publication Date
KR20140139595A true KR20140139595A (ko) 2014-12-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147029964A Withdrawn KR20140139595A (ko) 2012-03-29 2013-03-28 내장형 레벨 시프터 및 프로그래머블 상승 엣지 및 펄스 폭을 갖는 펄스 클록 발생 로직

Country Status (6)

Country Link
US (1) US8638153B2 (enExample)
EP (1) EP2831694B1 (enExample)
JP (1) JP6242852B2 (enExample)
KR (1) KR20140139595A (enExample)
CN (1) CN104204992B (enExample)
WO (1) WO2013149040A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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US9767873B2 (en) 2015-08-19 2017-09-19 Samsung Electronics Co., Ltd. Semiconductor memory system, semiconductor memory device and method of operating the semiconductor memory device

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BR122016006764B1 (pt) 2013-03-15 2022-02-01 Intel Corporation Aparelhos e métodos de memória
CN104680991B (zh) * 2015-03-03 2017-03-08 深圳市华星光电技术有限公司 用于goa架构液晶面板的电平移位电路及电平移位方法
US9564901B1 (en) 2015-12-17 2017-02-07 Apple Inc. Self-timed dynamic level shifter with falling edge generator
CN106940423B (zh) * 2016-01-05 2023-02-24 华润微集成电路(无锡)有限公司 多功能芯片内置的测试电路
US9607674B1 (en) * 2016-01-06 2017-03-28 Qualcomm Incorporated Pulse latch reset tracking at high differential voltage
US10163508B2 (en) 2016-02-26 2018-12-25 Intel Corporation Supporting multiple memory types in a memory slot
US10615796B2 (en) * 2016-07-29 2020-04-07 Qualcomm Incorporated Level shifter
US10163474B2 (en) * 2016-09-22 2018-12-25 Qualcomm Incorporated Apparatus and method of clock shaping for memory
US9990984B1 (en) 2016-12-06 2018-06-05 Qualcomm Incorporated Pulse-stretcher clock generator circuit for high speed memory subsystems
CN106941347B (zh) * 2017-03-17 2019-08-06 中国电子科技集团公司第二十四研究所 占空比调节装置及方法
US10389335B1 (en) 2018-05-04 2019-08-20 Apple Inc. Clock pulse generation circuit
US10790826B1 (en) * 2019-05-19 2020-09-29 Novatek Microelectronics Corp. Level shifter with low power consumption
US11972834B2 (en) * 2019-11-11 2024-04-30 Qualcomm Incorporated Low power and robust level-shifting pulse latch for dual-power memories
CN114006605B (zh) * 2021-12-31 2022-05-10 峰岹科技(深圳)股份有限公司 单边沿延时电路
US12340864B2 (en) * 2022-02-11 2025-06-24 Synopsys, Inc. Interface level-shifter dual-rail memory architecture
CN118538263A (zh) * 2024-07-25 2024-08-23 中科亿海微电子科技（苏州）有限公司 一种对fpga bram读写冲突的时序控制方法及电路

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US5027323A (en) 1988-01-14 1991-06-25 Hitachi, Ltd. Write pulse signal generating circuit for a semiconductor memory device
US6072348A (en) * 1997-07-09 2000-06-06 Xilinx, Inc. Programmable power reduction in a clock-distribution circuit
US5929684A (en) * 1998-03-06 1999-07-27 Siemens Aktiengesellschaft Feedback pulse generators
JP2003030991A (ja) * 2001-07-12 2003-01-31 Sanyo Electric Co Ltd メモリ
CN2544466Y (zh) * 2002-01-25 2003-04-09 威盛电子股份有限公司 无突波干扰的时钟脉冲输出电路
US6975154B1 (en) * 2003-04-29 2005-12-13 Altera Corporation Reduced power consumption clock network
JP4173887B2 (ja) * 2003-08-13 2008-10-29 富士通株式会社 パルス生成回路
US6850460B1 (en) 2004-05-12 2005-02-01 International Business Machines Corporation High performance programmable array local clock generator
US7180353B2 (en) 2005-02-03 2007-02-20 Mediatek Incorporation Apparatus and method for low power clock distribution
US7609583B2 (en) 2007-11-12 2009-10-27 Micron Technology, Inc. Selective edge phase mixing
US7876631B2 (en) * 2008-12-17 2011-01-25 Qualcomm Incorporated Self-tuning of signal path delay in circuit employing multiple voltage domains
US8102720B2 (en) 2009-02-02 2012-01-24 Qualcomm Incorporated System and method of pulse generation
CN101847991B (zh) * 2009-03-27 2012-01-11 台湾积体电路制造股份有限公司 时钟脉冲产生器、存储器电路及产生内部时钟脉冲信号的方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9767873B2 (en) 2015-08-19 2017-09-19 Samsung Electronics Co., Ltd. Semiconductor memory system, semiconductor memory device and method of operating the semiconductor memory device

Also Published As

Publication number Publication date
CN104204992B (zh) 2017-05-17
EP2831694B1 (en) 2017-08-23
JP6242852B2 (ja) 2017-12-06
US8638153B2 (en) 2014-01-28
WO2013149040A1 (en) 2013-10-03
EP2831694A1 (en) 2015-02-04
CN104204992A (zh) 2014-12-10
JP2015520434A (ja) 2015-07-16
US20130257498A1 (en) 2013-10-03

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PA0105 International application

Patent event date: 20141024

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid