KR20140122271A - 단백질을 포함하는 화학적 기계적 폴리싱 (ｃｍｐ) 조성물 - Google Patents

단백질을 포함하는 화학적 기계적 폴리싱 (ｃｍｐ) 조성물 Download PDF

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Publication number
KR20140122271A
KR20140122271A KR1020147024959A KR20147024959A KR20140122271A KR 20140122271 A KR20140122271 A KR 20140122271A KR 1020147024959 A KR1020147024959 A KR 1020147024959A KR 20147024959 A KR20147024959 A KR 20147024959A KR 20140122271 A KR20140122271 A KR 20140122271A
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KR
South Korea
Prior art keywords
protein
cmp
particles
cmp composition
composition
Prior art date
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Ceased
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KR1020147024959A
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English (en)
Korean (ko)
Inventor
유주오 리
바슈티안 마르텐 놀러
미하엘 라우터
롤란트 랑게
Original Assignee
바스프 에스이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 바스프 에스이 filed Critical 바스프 에스이
Publication of KR20140122271A publication Critical patent/KR20140122271A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020147024959A 2012-02-10 2013-01-25 단백질을 포함하는 화학적 기계적 폴리싱 (ｃｍｐ) 조성물 Ceased KR20140122271A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261597210P 2012-02-10 2012-02-10
US61/597,210 2012-02-10
PCT/IB2013/050647 WO2013118015A1 (en) 2012-02-10 2013-01-25 Chemical mechanical polishing (cmp) composition comprising a protein

Publications (1)

Publication Number Publication Date
KR20140122271A true KR20140122271A (ko) 2014-10-17

Family

ID=48946960

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147024959A Ceased KR20140122271A (ko) 2012-02-10 2013-01-25 단백질을 포함하는 화학적 기계적 폴리싱 (ｃｍｐ) 조성물

Country Status (11)

Country Link
US (1) US9777192B2 (https=)
EP (1) EP2812911B1 (https=)
JP (1) JP6114312B2 (https=)
KR (1) KR20140122271A (https=)
CN (1) CN104081501B (https=)
IL (1) IL233797A0 (https=)
MY (1) MY171093A (https=)
RU (1) RU2631875C2 (https=)
SG (1) SG11201404747UA (https=)
TW (1) TWI606102B (https=)
WO (1) WO2013118015A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170072524A (ko) * 2015-12-17 2017-06-27 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마 방법
KR20200094689A (ko) * 2019-01-30 2020-08-07 버슘머트리얼즈 유에스, 엘엘씨 조정가능한 산화규소 및 질화규소 제거 속도를 갖는 쉘로우 트렌치 분리(sti) 화학기계적 평탄화(cmp) 연마

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013122061A1 (ja) * 2012-02-13 2013-08-22 国立大学法人京都工芸繊維大学 窒化ケイ素（Ｓｉ３Ｎ４）親和性ペプチド、及びその利用
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US9551075B2 (en) * 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
US11326076B2 (en) * 2019-01-25 2022-05-10 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives
KR20210076571A (ko) * 2019-12-16 2021-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
WO2021231090A1 (en) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes
US12009339B2 (en) * 2020-08-18 2024-06-11 Seoul National University R&Db Foundation Electronic device and method of transferring electronic element using stamping and magnetic field alignment
KR102928760B1 (ko) 2023-10-10 2026-02-20 주식회사 케이씨텍 표면 개질된 나노 세리아 입자를 포함하는 cmp 슬러리 조성물
CN118240485B (zh) * 2024-05-27 2024-08-16 嘉兴市小辰光伏科技有限公司 一种具有云朵状塔基硅片碱抛添加剂及其使用方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW510917B (en) * 1998-02-24 2002-11-21 Showa Denko Kk Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same
JP3560484B2 (ja) * 1998-08-05 2004-09-02 昭和電工株式会社 Ｌｓｉデバイス研磨用研磨材組成物及び研磨方法
WO2001033620A1 (fr) 1999-11-04 2001-05-10 Seimi Chemical Co., Ltd. Compose a polir pour semi-conducteur contenant un peptide
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
TWI281493B (en) * 2000-10-06 2007-05-21 Mitsui Mining & Smelting Co Polishing material
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7241734B2 (en) * 2004-08-18 2007-07-10 E. I. Du Pont De Nemours And Company Thermophilic hydrophobin proteins and applications for surface modification
JP4027929B2 (ja) 2004-11-30 2007-12-26 花王株式会社 半導体基板用研磨液組成物
US20060216935A1 (en) * 2005-03-28 2006-09-28 Ferro Corporation Composition for oxide CMP in CMOS device fabrication
KR20080033514A (ko) 2005-08-05 2008-04-16 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속막 평탄화를 위한 고 처리량의 화학적 기계적 연마조성물
WO2007130350A1 (en) * 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
WO2008069781A1 (en) * 2006-12-04 2008-06-12 Basf Se Planarization composition for metal surfaces comprising an alumina hydrate abrasive
JP4784614B2 (ja) * 2008-02-25 2011-10-05 Ｊｓｒ株式会社 化学機械研磨用水系分散体
WO2010037730A1 (en) 2008-10-03 2010-04-08 Basf Se Chemical mechanical polishing (cmp) polishing solution with enhanced performance
BRPI1010003A2 (pt) * 2009-03-09 2018-06-12 Basf Se uso de uma mistura, e, composição
JP2012028747A (ja) 2010-06-24 2012-02-09 Hitachi Chem Co Ltd Ｃｍｐ研磨液及び基板の研磨方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170072524A (ko) * 2015-12-17 2017-06-27 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마 방법
KR20200094689A (ko) * 2019-01-30 2020-08-07 버슘머트리얼즈 유에스, 엘엘씨 조정가능한 산화규소 및 질화규소 제거 속도를 갖는 쉘로우 트렌치 분리(sti) 화학기계적 평탄화(cmp) 연마

Also Published As

Publication number Publication date
JP6114312B2 (ja) 2017-04-12
SG11201404747UA (en) 2014-09-26
RU2014136534A (ru) 2016-03-27
MY171093A (en) 2019-09-25
CN104081501B (zh) 2019-02-01
TWI606102B (zh) 2017-11-21
EP2812911A4 (en) 2015-08-12
RU2631875C2 (ru) 2017-09-28
JP2015511258A (ja) 2015-04-16
US9777192B2 (en) 2017-10-03
EP2812911B1 (en) 2017-06-28
US20150017454A1 (en) 2015-01-15
IL233797A0 (en) 2014-09-30
WO2013118015A1 (en) 2013-08-15
TW201339258A (zh) 2013-10-01
EP2812911A1 (en) 2014-12-17
CN104081501A (zh) 2014-10-01

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