TWI606102B - 包含蛋白質之化學機械拋光組合物 - Google Patents

包含蛋白質之化學機械拋光組合物 Download PDF

Info

Publication number
TWI606102B
TWI606102B TW102105003A TW102105003A TWI606102B TW I606102 B TWI606102 B TW I606102B TW 102105003 A TW102105003 A TW 102105003A TW 102105003 A TW102105003 A TW 102105003A TW I606102 B TWI606102 B TW I606102B
Authority
TW
Taiwan
Prior art keywords
cmp
cmp composition
protein
composition
particles
Prior art date
Application number
TW102105003A
Other languages
English (en)
Chinese (zh)
Other versions
TW201339258A (zh
Inventor
李玉宙
巴斯汀 馬汀 諾勒
麥可 駱德
羅蘭 朗格
Original Assignee
巴地斯顏料化工廠
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 巴地斯顏料化工廠 filed Critical 巴地斯顏料化工廠
Publication of TW201339258A publication Critical patent/TW201339258A/zh
Application granted granted Critical
Publication of TWI606102B publication Critical patent/TWI606102B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/06Other polishing compositions
    • C09G1/14Other polishing compositions based on non-waxy substances
    • C09G1/18Other polishing compositions based on non-waxy substances on other substances
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06Planarisation of inorganic insulating materials
    • H10P95/062Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW102105003A 2012-02-10 2013-02-07 包含蛋白質之化學機械拋光組合物 TWI606102B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201261597210P 2012-02-10 2012-02-10

Publications (2)

Publication Number Publication Date
TW201339258A TW201339258A (zh) 2013-10-01
TWI606102B true TWI606102B (zh) 2017-11-21

Family

ID=48946960

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102105003A TWI606102B (zh) 2012-02-10 2013-02-07 包含蛋白質之化學機械拋光組合物

Country Status (11)

Country Link
US (1) US9777192B2 (https=)
EP (1) EP2812911B1 (https=)
JP (1) JP6114312B2 (https=)
KR (1) KR20140122271A (https=)
CN (1) CN104081501B (https=)
IL (1) IL233797A0 (https=)
MY (1) MY171093A (https=)
RU (1) RU2631875C2 (https=)
SG (1) SG11201404747UA (https=)
TW (1) TWI606102B (https=)
WO (1) WO2013118015A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013122061A1 (ja) * 2012-02-13 2013-08-22 国立大学法人京都工芸繊維大学 窒化ケイ素(Si3N4)親和性ペプチド、及びその利用
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US9551075B2 (en) * 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
KR102605140B1 (ko) * 2015-12-17 2023-11-24 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마 방법
US11326076B2 (en) * 2019-01-25 2022-05-10 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives
US11608451B2 (en) * 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
KR20210076571A (ko) * 2019-12-16 2021-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
WO2021231090A1 (en) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes
US12009339B2 (en) * 2020-08-18 2024-06-11 Seoul National University R&Db Foundation Electronic device and method of transferring electronic element using stamping and magnetic field alignment
KR102928760B1 (ko) 2023-10-10 2026-02-20 주식회사 케이씨텍 표면 개질된 나노 세리아 입자를 포함하는 cmp 슬러리 조성물
CN118240485B (zh) * 2024-05-27 2024-08-16 嘉兴市小辰光伏科技有限公司 一种具有云朵状塔基硅片碱抛添加剂及其使用方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW510917B (en) * 1998-02-24 2002-11-21 Showa Denko Kk Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same
JP3560484B2 (ja) * 1998-08-05 2004-09-02 昭和電工株式会社 Lsiデバイス研磨用研磨材組成物及び研磨方法
WO2001033620A1 (fr) 1999-11-04 2001-05-10 Seimi Chemical Co., Ltd. Compose a polir pour semi-conducteur contenant un peptide
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
TWI281493B (en) * 2000-10-06 2007-05-21 Mitsui Mining & Smelting Co Polishing material
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7241734B2 (en) * 2004-08-18 2007-07-10 E. I. Du Pont De Nemours And Company Thermophilic hydrophobin proteins and applications for surface modification
JP4027929B2 (ja) 2004-11-30 2007-12-26 花王株式会社 半導体基板用研磨液組成物
US20060216935A1 (en) * 2005-03-28 2006-09-28 Ferro Corporation Composition for oxide CMP in CMOS device fabrication
KR20080033514A (ko) 2005-08-05 2008-04-16 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속막 평탄화를 위한 고 처리량의 화학적 기계적 연마조성물
WO2007130350A1 (en) * 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
WO2008069781A1 (en) * 2006-12-04 2008-06-12 Basf Se Planarization composition for metal surfaces comprising an alumina hydrate abrasive
JP4784614B2 (ja) * 2008-02-25 2011-10-05 Jsr株式会社 化学機械研磨用水系分散体
WO2010037730A1 (en) 2008-10-03 2010-04-08 Basf Se Chemical mechanical polishing (cmp) polishing solution with enhanced performance
BRPI1010003A2 (pt) * 2009-03-09 2018-06-12 Basf Se uso de uma mistura, e, composição
JP2012028747A (ja) 2010-06-24 2012-02-09 Hitachi Chem Co Ltd Cmp研磨液及び基板の研磨方法

Also Published As

Publication number Publication date
KR20140122271A (ko) 2014-10-17
JP6114312B2 (ja) 2017-04-12
SG11201404747UA (en) 2014-09-26
RU2014136534A (ru) 2016-03-27
MY171093A (en) 2019-09-25
CN104081501B (zh) 2019-02-01
EP2812911A4 (en) 2015-08-12
RU2631875C2 (ru) 2017-09-28
JP2015511258A (ja) 2015-04-16
US9777192B2 (en) 2017-10-03
EP2812911B1 (en) 2017-06-28
US20150017454A1 (en) 2015-01-15
IL233797A0 (en) 2014-09-30
WO2013118015A1 (en) 2013-08-15
TW201339258A (zh) 2013-10-01
EP2812911A1 (en) 2014-12-17
CN104081501A (zh) 2014-10-01

Similar Documents

Publication Publication Date Title
TWI606102B (zh) 包含蛋白質之化學機械拋光組合物
EP3470487B1 (en) Mixed abrasive polishing compositions
TWI557196B (zh) 包含醣苷之化學機械拋光(cmp)組成物
TWI500722B (zh) 包含無機粒子與聚合物粒子之化學機械拋光(cmp)組成物
TWI570227B (zh) 一種製造半導體裝置的方法,其包括在含陰離子性磷酸鹽或膦酸鹽之cmp組合物存在下化學機械拋光硼磷矽酸鹽玻璃(bpsg)材料
TW201538700A (zh) 包含多胺基酸之化學機械拋光(cmp)組成物
CN108178988A (zh) 包含非离子表面活性剂和碳酸盐的化学机械抛光组合物
CN104364331A (zh) 包括在包含特定非离子表面活性剂的化学机械抛光组合物存在下进行iii-v族材料的化学机械抛光的制造半导体装置的方法
US20150099361A1 (en) Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
EP2662885A1 (en) A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
TW201504412A (zh) 化學機械拋光(cmp)組成物
KR101907862B1 (ko) 특정 헤테로폴리산을 포함하는 화학적 기계적 연마 (cmp) 조성물
TWI548727B (zh) 包含兩種抗蝕劑的化學機械研磨(cmp)組成物
EP2568024A1 (en) A chemical mechanical polishing (cmp) composition comprising a glycoside
TWI700358B (zh) 用於高效率拋光含鍺基材的化學機械拋光(cmp)組成物

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees