RU2631875C2 - Композиция для химико-механического полирования (смр), содержащая белок - Google Patents

Композиция для химико-механического полирования (смр), содержащая белок Download PDF

Info

Publication number
RU2631875C2
RU2631875C2 RU2014136534A RU2014136534A RU2631875C2 RU 2631875 C2 RU2631875 C2 RU 2631875C2 RU 2014136534 A RU2014136534 A RU 2014136534A RU 2014136534 A RU2014136534 A RU 2014136534A RU 2631875 C2 RU2631875 C2 RU 2631875C2
Authority
RU
Russia
Prior art keywords
composition
chemical
mechanical polishing
protein
cmp
Prior art date
Application number
RU2014136534A
Other languages
English (en)
Russian (ru)
Other versions
RU2014136534A (ru
Inventor
Южуо ЛИ
Бастиан Мартен НОЛЛЕР
Михаэль ЛАУТЕР
Роланд ЛАНГЕ
Original Assignee
Басф Се
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Басф Се filed Critical Басф Се
Publication of RU2014136534A publication Critical patent/RU2014136534A/ru
Application granted granted Critical
Publication of RU2631875C2 publication Critical patent/RU2631875C2/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
RU2014136534A 2012-02-10 2013-01-25 Композиция для химико-механического полирования (смр), содержащая белок RU2631875C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261597210P 2012-02-10 2012-02-10
US61/597,210 2012-02-10
PCT/IB2013/050647 WO2013118015A1 (en) 2012-02-10 2013-01-25 Chemical mechanical polishing (cmp) composition comprising a protein

Publications (2)

Publication Number Publication Date
RU2014136534A RU2014136534A (ru) 2016-03-27
RU2631875C2 true RU2631875C2 (ru) 2017-09-28

Family

ID=48946960

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2014136534A RU2631875C2 (ru) 2012-02-10 2013-01-25 Композиция для химико-механического полирования (смр), содержащая белок

Country Status (11)

Country Link
US (1) US9777192B2 (https=)
EP (1) EP2812911B1 (https=)
JP (1) JP6114312B2 (https=)
KR (1) KR20140122271A (https=)
CN (1) CN104081501B (https=)
IL (1) IL233797A0 (https=)
MY (1) MY171093A (https=)
RU (1) RU2631875C2 (https=)
SG (1) SG11201404747UA (https=)
TW (1) TWI606102B (https=)
WO (1) WO2013118015A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013122061A1 (ja) * 2012-02-13 2013-08-22 国立大学法人京都工芸繊維大学 窒化ケイ素（Ｓｉ３Ｎ４）親和性ペプチド、及びその利用
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US9551075B2 (en) * 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
KR102605140B1 (ko) * 2015-12-17 2023-11-24 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마 방법
US11326076B2 (en) * 2019-01-25 2022-05-10 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives
US11608451B2 (en) * 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
KR20210076571A (ko) * 2019-12-16 2021-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
WO2021231090A1 (en) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes
US12009339B2 (en) * 2020-08-18 2024-06-11 Seoul National University R&Db Foundation Electronic device and method of transferring electronic element using stamping and magnetic field alignment
KR102928760B1 (ko) 2023-10-10 2026-02-20 주식회사 케이씨텍 표면 개질된 나노 세리아 입자를 포함하는 cmp 슬러리 조성물
CN118240485B (zh) * 2024-05-27 2024-08-16 嘉兴市小辰光伏科技有限公司 一种具有云朵状塔基硅片碱抛添加剂及其使用方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1338636A1 (en) * 2000-10-06 2003-08-27 Mitsui Mining & Smelting Co., Ltd. Abrasive material
RU2002106418A (ru) * 1999-08-13 2003-09-27 Кабот Майкроэлектроникс Корпорейшн Химико-механические полирующие системы и способы их использования
US20060113283A1 (en) * 2004-11-30 2006-06-01 Kao Corporation Polishing composition for a semiconductor substrate
US20060216935A1 (en) * 2005-03-28 2006-09-28 Ferro Corporation Composition for oxide CMP in CMOS device fabrication
WO2007019342A2 (en) * 2005-08-05 2007-02-15 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
WO2008069781A1 (en) * 2006-12-04 2008-06-12 Basf Se Planarization composition for metal surfaces comprising an alumina hydrate abrasive

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW510917B (en) * 1998-02-24 2002-11-21 Showa Denko Kk Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same
JP3560484B2 (ja) * 1998-08-05 2004-09-02 昭和電工株式会社 Ｌｓｉデバイス研磨用研磨材組成物及び研磨方法
WO2001033620A1 (fr) 1999-11-04 2001-05-10 Seimi Chemical Co., Ltd. Compose a polir pour semi-conducteur contenant un peptide
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7241734B2 (en) * 2004-08-18 2007-07-10 E. I. Du Pont De Nemours And Company Thermophilic hydrophobin proteins and applications for surface modification
WO2007130350A1 (en) * 2006-05-02 2007-11-15 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
JP4784614B2 (ja) * 2008-02-25 2011-10-05 Ｊｓｒ株式会社 化学機械研磨用水系分散体
WO2010037730A1 (en) 2008-10-03 2010-04-08 Basf Se Chemical mechanical polishing (cmp) polishing solution with enhanced performance
BRPI1010003A2 (pt) * 2009-03-09 2018-06-12 Basf Se uso de uma mistura, e, composição
JP2012028747A (ja) 2010-06-24 2012-02-09 Hitachi Chem Co Ltd Ｃｍｐ研磨液及び基板の研磨方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2002106418A (ru) * 1999-08-13 2003-09-27 Кабот Майкроэлектроникс Корпорейшн Химико-механические полирующие системы и способы их использования
EP1338636A1 (en) * 2000-10-06 2003-08-27 Mitsui Mining & Smelting Co., Ltd. Abrasive material
US20060113283A1 (en) * 2004-11-30 2006-06-01 Kao Corporation Polishing composition for a semiconductor substrate
US20060216935A1 (en) * 2005-03-28 2006-09-28 Ferro Corporation Composition for oxide CMP in CMOS device fabrication
WO2007019342A2 (en) * 2005-08-05 2007-02-15 Advanced Technology Materials, Inc. High throughput chemical mechanical polishing composition for metal film planarization
WO2008069781A1 (en) * 2006-12-04 2008-06-12 Basf Se Planarization composition for metal surfaces comprising an alumina hydrate abrasive

Also Published As

Publication number Publication date
KR20140122271A (ko) 2014-10-17
JP6114312B2 (ja) 2017-04-12
SG11201404747UA (en) 2014-09-26
RU2014136534A (ru) 2016-03-27
MY171093A (en) 2019-09-25
CN104081501B (zh) 2019-02-01
TWI606102B (zh) 2017-11-21
EP2812911A4 (en) 2015-08-12
JP2015511258A (ja) 2015-04-16
US9777192B2 (en) 2017-10-03
EP2812911B1 (en) 2017-06-28
US20150017454A1 (en) 2015-01-15
IL233797A0 (en) 2014-09-30
WO2013118015A1 (en) 2013-08-15
TW201339258A (zh) 2013-10-01
EP2812911A1 (en) 2014-12-17
CN104081501A (zh) 2014-10-01

Similar Documents

Publication Publication Date Title
RU2631875C2 (ru) Композиция для химико-механического полирования (смр), содержащая белок
US9487674B2 (en) Chemical mechanical polishing (CMP) composition comprising a glycoside
WO2016006553A1 (ja) Ｃｍｐ用研磨液及び研磨方法
US9263296B2 (en) Chemical mechanical polishing (CMP) composition comprising two types of corrosion inhibitors
US20170166778A1 (en) Chemical mechanical polishing (cmp) composition comprising a poly(aminoacid)
US9416298B2 (en) Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (CMP) of III-V material in the presence of a CMP composition comprising a specific non-ionic surfactant
CN108178988A (zh) 包含非离子表面活性剂和碳酸盐的化学机械抛光组合物
KR101907862B1 (ko) 특정 헤테로폴리산을 포함하는 화학적 기계적 연마 (cmp) 조성물
TWI548727B (zh) 包含兩種抗蝕劑的化學機械研磨（ｃｍｐ）組成物
EP2568024A1 (en) A chemical mechanical polishing (cmp) composition comprising a glycoside
TWI700358B (zh) 用於高效率拋光含鍺基材的化學機械拋光（ｃｍｐ）組成物
EP2666833A1 (en) A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfactant

Legal Events

Date Code Title Description
MM4A The patent is invalid due to non-payment of fees

Effective date: 20200126