CN104081501B - 包含蛋白质的化学机械抛光(cmp)组合物 - Google Patents

包含蛋白质的化学机械抛光(cmp)组合物 Download PDF

Info

Publication number
CN104081501B
CN104081501B CN201380006888.3A CN201380006888A CN104081501B CN 104081501 B CN104081501 B CN 104081501B CN 201380006888 A CN201380006888 A CN 201380006888A CN 104081501 B CN104081501 B CN 104081501B
Authority
CN
China
Prior art keywords
cmp
cmp composition
protein
composition
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201380006888.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN104081501A (zh
Inventor
Y·李
B·M·诺勒
M·劳特尔
R·朗格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of CN104081501A publication Critical patent/CN104081501A/zh
Application granted granted Critical
Publication of CN104081501B publication Critical patent/CN104081501B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201380006888.3A 2012-02-10 2013-01-25 包含蛋白质的化学机械抛光(cmp)组合物 Expired - Fee Related CN104081501B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261597210P 2012-02-10 2012-02-10
US61/597,210 2012-02-10
PCT/IB2013/050647 WO2013118015A1 (en) 2012-02-10 2013-01-25 Chemical mechanical polishing (cmp) composition comprising a protein

Publications (2)

Publication Number Publication Date
CN104081501A CN104081501A (zh) 2014-10-01
CN104081501B true CN104081501B (zh) 2019-02-01

Family

ID=48946960

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380006888.3A Expired - Fee Related CN104081501B (zh) 2012-02-10 2013-01-25 包含蛋白质的化学机械抛光(cmp)组合物

Country Status (11)

Country Link
US (1) US9777192B2 (https=)
EP (1) EP2812911B1 (https=)
JP (1) JP6114312B2 (https=)
KR (1) KR20140122271A (https=)
CN (1) CN104081501B (https=)
IL (1) IL233797A0 (https=)
MY (1) MY171093A (https=)
RU (1) RU2631875C2 (https=)
SG (1) SG11201404747UA (https=)
TW (1) TWI606102B (https=)
WO (1) WO2013118015A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013122061A1 (ja) * 2012-02-13 2013-08-22 国立大学法人京都工芸繊維大学 窒化ケイ素（Ｓｉ３Ｎ４）親和性ペプチド、及びその利用
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US9551075B2 (en) * 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
KR102605140B1 (ko) * 2015-12-17 2023-11-24 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마 방법
US11326076B2 (en) * 2019-01-25 2022-05-10 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives
US11608451B2 (en) * 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
KR20210076571A (ko) * 2019-12-16 2021-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
WO2021231090A1 (en) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes
US12009339B2 (en) * 2020-08-18 2024-06-11 Seoul National University R&Db Foundation Electronic device and method of transferring electronic element using stamping and magnetic field alignment
KR102928760B1 (ko) 2023-10-10 2026-02-20 주식회사 케이씨텍 표면 개질된 나노 세리아 입자를 포함하는 cmp 슬러리 조성물
CN118240485B (zh) * 2024-05-27 2024-08-16 嘉兴市小辰光伏科技有限公司 一种具有云朵状塔基硅片碱抛添加剂及其使用方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7241734B2 (en) * 2004-08-18 2007-07-10 E. I. Du Pont De Nemours And Company Thermophilic hydrophobin proteins and applications for surface modification
CN101356628A (zh) * 2005-08-05 2009-01-28 高级技术材料公司 用于对金属膜进行平坦化的高通量化学机械抛光组合物
CN101437918A (zh) * 2006-05-02 2009-05-20 卡伯特微电子公司 用于半导体材料的化学机械抛光的组合物及方法
CN102341464A (zh) * 2009-03-09 2012-02-01 巴斯夫欧洲公司 水溶性聚合物和疏水蛋白的混合物在增稠水相中的用途

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW510917B (en) * 1998-02-24 2002-11-21 Showa Denko Kk Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same
JP3560484B2 (ja) * 1998-08-05 2004-09-02 昭和電工株式会社 Ｌｓｉデバイス研磨用研磨材組成物及び研磨方法
WO2001033620A1 (fr) 1999-11-04 2001-05-10 Seimi Chemical Co., Ltd. Compose a polir pour semi-conducteur contenant un peptide
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
TWI281493B (en) * 2000-10-06 2007-05-21 Mitsui Mining & Smelting Co Polishing material
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
JP4027929B2 (ja) 2004-11-30 2007-12-26 花王株式会社 半導体基板用研磨液組成物
US20060216935A1 (en) * 2005-03-28 2006-09-28 Ferro Corporation Composition for oxide CMP in CMOS device fabrication
WO2008069781A1 (en) * 2006-12-04 2008-06-12 Basf Se Planarization composition for metal surfaces comprising an alumina hydrate abrasive
JP4784614B2 (ja) * 2008-02-25 2011-10-05 Ｊｓｒ株式会社 化学機械研磨用水系分散体
WO2010037730A1 (en) 2008-10-03 2010-04-08 Basf Se Chemical mechanical polishing (cmp) polishing solution with enhanced performance
JP2012028747A (ja) 2010-06-24 2012-02-09 Hitachi Chem Co Ltd Ｃｍｐ研磨液及び基板の研磨方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7241734B2 (en) * 2004-08-18 2007-07-10 E. I. Du Pont De Nemours And Company Thermophilic hydrophobin proteins and applications for surface modification
CN101356628A (zh) * 2005-08-05 2009-01-28 高级技术材料公司 用于对金属膜进行平坦化的高通量化学机械抛光组合物
CN101437918A (zh) * 2006-05-02 2009-05-20 卡伯特微电子公司 用于半导体材料的化学机械抛光的组合物及方法
CN102341464A (zh) * 2009-03-09 2012-02-01 巴斯夫欧洲公司 水溶性聚合物和疏水蛋白的混合物在增稠水相中的用途

Also Published As

Publication number Publication date
KR20140122271A (ko) 2014-10-17
JP6114312B2 (ja) 2017-04-12
SG11201404747UA (en) 2014-09-26
RU2014136534A (ru) 2016-03-27
MY171093A (en) 2019-09-25
TWI606102B (zh) 2017-11-21
EP2812911A4 (en) 2015-08-12
RU2631875C2 (ru) 2017-09-28
JP2015511258A (ja) 2015-04-16
US9777192B2 (en) 2017-10-03
EP2812911B1 (en) 2017-06-28
US20150017454A1 (en) 2015-01-15
IL233797A0 (en) 2014-09-30
WO2013118015A1 (en) 2013-08-15
TW201339258A (zh) 2013-10-01
EP2812911A1 (en) 2014-12-17
CN104081501A (zh) 2014-10-01

Similar Documents

Publication Publication Date Title
CN104081501B (zh) 包含蛋白质的化学机械抛光(cmp)组合物
CN103764775B (zh) 包含苷的化学机械抛光(cmp)组合物
EP3470487B1 (en) Mixed abrasive polishing compositions
CN105934487B (zh) 包含聚氨基酸的化学机械抛光(cmp)组合物
TWI500722B (zh) 包含無機粒子與聚合物粒子之化學機械拋光（ｃｍｐ）組成物
US9416298B2 (en) Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (CMP) of III-V material in the presence of a CMP composition comprising a specific non-ionic surfactant
CN108178988A (zh) 包含非离子表面活性剂和碳酸盐的化学机械抛光组合物
EP2847785A1 (en) Process for manufacture of semiconductor devices
EP2662885A1 (en) A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
US8927429B2 (en) Chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid
TWI548727B (zh) 包含兩種抗蝕劑的化學機械研磨（ｃｍｐ）組成物
EP2568024A1 (en) A chemical mechanical polishing (cmp) composition comprising a glycoside
TWI700358B (zh) 用於高效率拋光含鍺基材的化學機械拋光（ｃｍｐ）組成物
EP2666833A1 (en) A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfactant

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190201

Termination date: 20200125

CF01 Termination of patent right due to non-payment of annual fee