KR20140040157A - Wafer-processing tape and method for manufacturing semiconductor device using same - Google Patents

Abstract

An object of the present invention is to provide a wafer processing tape having a uniform diffusibility suitable for a step of dividing the adhesive layer and excellent in pick-up property because no deviation occurs at the interface between the adhesive layer and the adhesive layer due to expansion. In this invention, it consists of a base film, the adhesive layer formed on the said base film, and the adhesive bond layer formed on the said adhesive layer, The shear force in 25 degreeC of the said adhesive layer and the said adhesive layer is 0.2N / mm <2> or more, 200mJ Peeling speed of the adhesive layer and the adhesive layer at a peeling speed of 300 mm / min and a peeling angle of 180 ° in a standard state according to JIS-Z0237 after energy ray irradiation of / cm 2 is 0.3 N / 25 mm or less. Use a processing tape.

Description

Wafer Processing Tape and Manufacturing Method of Semiconductor Device Using The Same {WAFER-PROCESSING TAPE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an expandable wafer processing tape and the like used for dividing an adhesive layer along a chip by expansion in a semiconductor device manufacturing process.

In the manufacturing process of semiconductor devices such as ICs, in order to thin the wafer after circuit pattern formation, a backgrinding process for grinding the back surface of the wafer, a die for attaching the adhesive and stretchable wafer processing tape to the back surface of the wafer, and then dividing the wafer into chips Sing process, expand process to expand (expand) wafer processing tape, pick-up process to pick up broken chips, and attach the picked chips to lead frame or package substrate (or stack and bond chips together in stacked package) Die-bonding (mount) process is performed.

In the backgrinding process, a surface protection tape is used to protect the circuit pattern formation surface (wafer surface) of the wafer from contamination. When peeling off the surface protection tape from the wafer surface after finishing grinding the back surface of the wafer, the tape for wafer processing is fixed to the adsorption table after bonding the wafer processing tape (dicing die-bonding tape) described below to the back surface of the wafer. The surface protective tape is subjected to a treatment for lowering the adhesion to the wafer, and then the surface protective tape is peeled off. The wafer from which the surface protection tape has been peeled off is then separated from the adsorption table with the wafer processing tape bonded to the back surface thereof, and then provided to the next process, the dicing process. In addition, the process which reduces said adhesive force is an energy-beam irradiation process, when a surface protection tape consists of energy ray curable components, such as an ultraviolet-ray, and heat processing, when a surface protection tape consists of thermosetting components.

In the dicing step to the mounting step following the backgrinding step, a tape for wafer processing in which an adhesive layer and an adhesive layer are laminated in this order on a base film is used. In general, in the case of using a wafer, first, the adhesive layer of the wafer processing tape is bonded to the back surface of the wafer to fix the wafer, and the wafer and the adhesive layer are diced in units of chips using a dicing blade. Thereafter, an expand process is performed to widen the gap between chips by extending the tape in the radial direction of the wafer. This expand process is performed in order to increase the recognition of the chip by a CCD camera or the like in a subsequent pick-up process, and to prevent chip breakage caused by contact between adjacent chips when picking up the chip. Thereafter, the chip is peeled off from the pressure-sensitive adhesive layer together with the adhesive layer in the pick-up step and picked up, and is directly bonded to a lead frame or a package substrate in the mounting step. By using the wafer processing tape as described above, the chip containing the adhesive layer can be directly adhered to a lead frame or a package substrate, so that the step of applying the adhesive or the step of adhering the die bonding film to each chip separately can be omitted. .

However, in the dicing process, since the wafer and the adhesive layer are diced together using the dicing blade as described above, not only the cutting residue of the wafer but also the cutting residue of the adhesive layer occurs. When the cutting residue of the adhesive layer enters into the grooves of the wafer formed by dicing and is blocked, chips may stick together and pick-up defects may occur, resulting in a decrease in the production rate of the semiconductor device.

In order to solve this problem, a method of dividing an adhesive layer into individual chips by dicing only a wafer by a blade in the dicing step and expanding the wafer processing tape in an expand step (for example, has been proposed). , Patent Document 1). According to the method of dividing the adhesive layer using the tension at the time of expansion, the cutting chips of the adhesive are not generated, which does not adversely affect the pick-up process.

Also, recently, a so-called stealth dicing method has been proposed in which a laser can cut a wafer in a non-contact manner using a factory value as a wafer cutting method. For example, Patent Document 2 discloses a multi-photon absorption inside a semiconductor substrate by irradiating a laser beam while focusing the laser beam through an adhesive layer (die bond resin layer) through a stealth dicing method. A method of cutting a semiconductor substrate is provided, which comprises a step of forming a modified region by forming the modified region as a cutting portion and a step of cutting the semiconductor substrate and the adhesive layer along the cutting portion by expanding the sheet.

Moreover, as a cutting method of the other wafer which used a laser factory value, for example, patent document 3 has a process of attaching the die-bonding adhesive layer (adhesive film) to the back surface of a wafer, and the adhesive bond layer side of the wafer to which the adhesive bond layer was bonded. Bonding the protective adhesive tape, which is extensible, to the individual chips by irradiating a laser beam along the street from the surface of the wafer to which the protective adhesive tape is bonded; and extending the protective adhesive tape to apply a tensile force to the adhesive layer. A method of dividing a wafer has been proposed, which includes a step of attaching and breaking an adhesive layer for each chip, and a step of removing the chip to which the broken adhesive layer is bonded from the protective adhesive tape.

According to the cutting methods of the wafers described in these Patent Documents 2 and 3, since the wafer is cut in a non-contact manner by irradiation of laser light and expansion of the tape, the physical load applied to the wafer is small, and blade dicing which is the mainstream is performed. The wafer can be cut without generating chipping chips (chip) as in the case of the present invention. In addition, since the adhesive layer is divided by expansion, cutting chips of the adhesive layer are not generated. For this reason, it is attracting attention as an outstanding technique which can replace blade dicing.

In the method of dividing an adhesive bond layer by expansion as described in the said patent documents 1-3, in order to reliably divide an adhesive bond layer along a chip in the wafer used, the uniform and isotropic expandability of a base film is carried out to an adhesive bond layer. It needs to be fully electrolyte. This is because when a deviation occurs at the interface between the adhesive layer and the pressure-sensitive adhesive layer, sufficient tensile force is not transmitted to the adhesive layer at that point, and the adhesive layer cannot be divided.

However, in the case of using a tape for wafer processing having a design that does not generally cause an interface shift between the adhesive layer and the pressure-sensitive adhesive layer, a problem arises in that the chip divided in the pick-up step cannot be peeled off.

Patent Document 1: Japanese Patent Application Laid-Open No. 2007-5530 Patent Document 2: Japanese Patent Application Laid-Open No. 2003-338467 Patent Document 3: Japanese Patent Application Laid-Open No. 2004-273895

Therefore, an object of the present invention is to provide a wafer processing tape having a uniform diffusibility suitable for a step of dividing the adhesive layer and excellent in pick-up property since no deviation occurs at the interface between the adhesive layer and the adhesive layer due to expansion.

MEANS TO SOLVE THE PROBLEM In order to solve the above subject, this invention consists of a base film, the adhesive layer formed on the said base film, and the adhesive bond layer formed on the said adhesive layer as a 1st aspect, and it is 25 of the said adhesive layer and the said adhesive layer. Shear force of 0.2 N / mm 2 or more, and the pressure-sensitive adhesive layer and the adhesive layer at a peel rate of 300 mm / min and a peel angle of 180 ° in a standard state according to JIS-Z0237 after an energy ray irradiation of 200 mJ / cm 2. It is to provide a wafer processing tape, characterized in that the peel force is 0.3N / 25mm or less.

In the first aspect, the pressure-sensitive adhesive layer and the adhesive layer has a shear force at 25 ° C. of 0.2 N / mm 2 or more and 0.5 N / mm 2 or less, and the pressure-sensitive adhesive layer is composed of an adhesive composition having a gel fraction of 60% or more. The pressure-sensitive adhesive composition contains a polymer having an energy ray-curable carbon-carbon double bond having 60 mol% or more of (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms as a base resin, and having an iodine value of 5 to 30. It is especially preferable if it is made to contain and the said adhesive composition contains at least 1 sort (s) of compound chosen from the group which consists of polyisocyanate, melamine formaldehyde resin, and an epoxy resin. The reason is that the low molecular weight of the pressure-sensitive adhesive layer has the property of maintaining the degree to which no defect such as chip splashing without causing peeling with the adhesive layer during dicing and easy peeling with the adhesive layer during pick-up. This is because the possibility of the component floating on the pressure-sensitive adhesive surface and leaving it to contaminate the chip surface or the adhesive layer can be avoided, and a tape for wafer processing can be obtained which is easy to manufacture and improves the cohesive force of the pressure-sensitive adhesive.

Moreover, this invention is a method of manufacturing a semiconductor device using the wafer processing tape which is a said 1st aspect as a 2nd aspect,

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C;

(d) peeling the surface protection tape from the wafer surface;

(e) irradiating a laser beam to the portion to be divided of the wafer to form a modified region by multiphoton absorption in the wafer;

(f) an expanding step of dividing the wafer and the adhesive layer between the wafer processing tape along a dividing line by expanding the wafer processing tape to obtain a plurality of chips including the adhesive layer;

(g) in the wafer processing tape after expansion, by heat shrinking a portion which does not overlap with the chip to remove looseness caused by the expand process to maintain the gap between the chips;

(h) picking up the chip containing the adhesive layer from the pressure-sensitive adhesive layer of the tape for wafer processing;

It is to provide a method of manufacturing a semiconductor device comprising a.

Moreover, as a 3rd aspect, this invention is a method of manufacturing a semiconductor device using the wafer processing tape which is the said 1st aspect,

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C;

(d) peeling the surface protection tape from the wafer surface;

(e) irradiating a laser beam along a dividing line on the surface of the wafer to divide the wafer into chips;

(f) an expanding step of dividing the adhesive layer for each chip by expanding the wafer processing tape to obtain a plurality of chips including the adhesive layer;

(g) in the wafer processing tape after expansion, by heat shrinking a portion which does not overlap with the chip to remove looseness caused by the expand process to maintain the gap between the chips;

(h) picking up the chip containing the adhesive layer from the pressure-sensitive adhesive layer of the tape for wafer processing;

It provides a method for manufacturing a semiconductor device comprising a.

Moreover, as a 4th aspect, this invention is a method of manufacturing a semiconductor device using the wafer processing tape which is the said 1st aspect,

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C;

(d) peeling the surface protection tape from the wafer surface;

(e) cutting the wafer along a dividing line using a dicing blade to divide the wafer into chips;

(f) an expanding step of dividing the adhesive layer for each chip by expanding the wafer processing tape to obtain a plurality of chips including the adhesive layer;

(g) in the wafer processing tape after expansion, by heat shrinking a portion which does not overlap with the chip to remove looseness caused by the expand process to maintain the gap between the chips;

(h) picking up the chip containing the adhesive layer from the adhesive layer of the tape for wafer processing;

It provides a method for manufacturing a semiconductor device comprising a.

And as a 5th aspect of this invention, as a method of manufacturing a semiconductor device using the tape for a wafer process which is said 1st aspect,

(a) cutting the wafer on which the circuit pattern is formed, using a dicing blade to a depth less than the thickness of the wafer along a line to be divided;

(b) bonding a surface protection tape to the wafer surface;

(c) a backgrinding process of grinding the wafer back surface and dividing it into chips;

(d) bonding the adhesive layer of the tape for wafer processing to the back surface of the wafer segmented with the chip while the wafer is heated to 70 to 80 ° C;

(e) peeling a surface protection tape from the surface of the wafer segmented with the chip;

(f) an expanding step of dividing the adhesive layer for each chip by expanding the wafer processing tape to obtain a plurality of chips including the adhesive layer;

(g) a step of maintaining the gap between the chips by removing the looseness caused by the expand process by heat shrinking a portion of the wafer processing tape after expansion that does not overlap with the chips;

(h) picking up the chip containing the adhesive layer from the pressure-sensitive adhesive layer of the tape for wafer processing;

It provides a method for manufacturing a semiconductor device comprising a.

In the tape for wafer processing of the present invention, the shear force at the interface between the adhesive layer and the adhesive layer is 0.2N / mm 2 or more, so that when expanded, the uniform and isotropic expandability of the base film is sufficiently transmitted to the adhesive layer through the adhesive layer. The adhesive layer is partitioned efficiently. In addition, since the peeling force of the said adhesive layer and the said adhesive bond layer in peeling speed 300mm / min and peeling angle 180 degree in the standard state based on JIS-Z0237 after 200mJ / cm <2> of energy-beam irradiation is 0.3 N / 25mm or less The peeling force is sufficiently lowered to have good pick-up performance.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows the state in which the wafer processing tape which concerns on embodiment of this invention, and a surface protection tape were bonded to the wafer.
2 is a cross-sectional view showing a state in which a surface protection tape is bonded to a wafer.
It is sectional drawing for demonstrating the process of bonding a wafer and a ring frame to the tape for a wafer process of this invention.
It is sectional drawing explaining the process of peeling a surface protection tape from the surface of a wafer.
5 is a cross-sectional view showing a modified region formed on a wafer by laser processing.
Fig. 6A is a cross-sectional view showing a state in which the wafer processing tape of the present invention is mounted on an expander. 6B is a cross-sectional view illustrating a process of dividing a wafer into chips by expanding the wafer processing tape. Fig. 6 (c) is a cross-sectional view showing the wafer processing tape, the adhesive layer and the chip after expansion.
7 is a cross-sectional view for explaining a heat shrink process.
8 is a cross-sectional view showing a state in which an auxiliary tape is bonded to the substrate surface side and the adhesive bond layer side of the tape for wafer processing of the present invention in a shearing force measuring method.
9 is a cross-sectional view showing an outline of a shear force measuring method.
It is a side view which shows the outline | summary of the peeling force measuring method.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail based on drawing.

1 is a cross-sectional view showing a wafer processing tape 10 according to an embodiment of the present invention. In the wafer processing tape 10 of the present invention, when the wafer is divided into chips by an expand, the adhesive layer 13 is divided along the chips. The wafer processing tape 10 has a base film 11, an adhesive layer 12 formed on the base film 11, and an adhesive layer 13 formed on the adhesive layer 12. The back is joined. In addition, each layer may be cut | disconnected (precut) to a predetermined shape previously according to a use process and an apparatus. The wafer processing tape 10 according to the present invention may be cut into one wafer or wound into a roll shape of a long sheet having a plurality of wafers cut into one wafer. Below, the structure of each layer is demonstrated.

<Base film>

The base film 11 should just have uniform and isotropic expandability in an expand process, The material is not specifically limited. In general, the crosslinked resin has a greater resilience against tension than the non-crosslinked resin, and thus has a larger shrinkage stress when heat is applied in the stretched state after the expansion process. Therefore, the looseness generated on the tape after the expansion process can be removed by heat shrink, which makes it possible to stably maintain the gap between the individual chips by tensioning the tape. Therefore, crosslinked resin, especially a thermoplastic crosslinked resin is used suitably as a base film.

As such a thermoplastic crosslinking resin, the ionomer resin which bridge | crosslinked ethylene- (meth) acrylic acid binary copolymer or ethylene- (meth) acrylic acid- (meth) acrylic acid with a metal ion is illustrated, for example. Since they can be expanded uniformly, they are suitable for the expansion process and are particularly suitable in that the restoring force acts strongly upon heating by crosslinking. Although the metal ion contained in the said ionomer resin is not specifically limited, Especially zinc ion with low elution property is preferable at the point which is low pollution.

In addition to the above-described ionomer resin, such thermoplastic crosslinking resins are also preferably crosslinked by irradiation of energy rays such as electron beams on low density polyethylene having a specific gravity of 0.910 or more and less than 0.930 or ultra low density polyethylene having a specific gravity of less than 0.910. Such a thermoplastic crosslinked resin has a uniform uniform expandability because the crosslinked portion and the non-crosslinked portion coexist in the resin. Moreover, since strong restoring force acts at the time of a heating, it is suitable also in removing the looseness of the tape which arose in the expansion process. By suitably adjusting the quantity of the energy beam irradiated with respect to the low density polyethylene and the ultra low density polyethylene, resin which has sufficient uniform expandability can be obtained.

In addition to the ionomer resin and the energy ray crosslinked polyethylene, an ethylene-vinyl acetate copolymer is irradiated with an energy ray such as an electron beam and crosslinked as the thermoplastic crosslinked resin. This thermoplastic crosslinked resin has a strong restoring force at the time of heating, and is thus suitable because it is possible to remove the looseness of the tape generated in the expansion step.

In addition, in the example shown in FIG. 1, although the base film 11 is a single layer, it is not limited to this, The multilayer film which laminated | stacked 2 or more types of thermoplastic crosslinking resins may be sufficient. Although the thickness of the base film 11 is not specifically defined, it is about 50-200 micrometers as thickness which has sufficient intensity | strength so that it is easy to stretch | extend in the process of expanding the tape 10 for a wafer process, and is not broken, 100 is good. More preferably, the thickness is 150 m.

As a manufacturing method of the base film 11 of multiple layers, the conventionally well-known extrusion method, the lamination method, etc. can be used. When using the lamination method, you may interpose an adhesive agent between layers. As the adhesive, a conventionally known adhesive can be used.

<Pressure-sensitive adhesive layer>

The pressure-sensitive adhesive layer 12 may be formed by coating the pressure-sensitive adhesive composition on the base film 11. The adhesive layer 12 which comprises the tape 10 for a wafer process of this invention does not cause peeling with the adhesive bond layer 13 at the time of dicing, and it does not generate | occur | produce defects, such as a chip | tip splashing, and maintains it, or picks up. What is necessary is just to have the characteristic which peels easily with the adhesive bond layer 13 at the time. Specifically, the shearing force at 25 ° C. of the pressure-sensitive adhesive layer 12 and the adhesive layer 13 is 0.2 N / mm 2 or more, and is a standard state in accordance with JIS-Z0237 after 200 mJ / cm 2 energy ray irradiation (temperature 23 ± 1 Pressure-sensitive adhesive layer having a peeling force (peel adhesion) of the pressure-sensitive adhesive layer 12 and the adhesive layer 13 at a peel rate of 300 mm / min and a peel angle of 180 ° at a relative humidity of 50 ± 5%). 12).

As for the interface shear force of the adhesive layer 12 and the adhesive bond layer 13, it is more preferable that they are 0.2N / mm <2> or more and 0.5N / mm <2> or less.

There is no particular lower limit for the peeling force of the pressure-sensitive adhesive layer 12 and the adhesive layer 13, but if the peeling force is too small, the chip may be peeled off until the pick-up process, or the chip may be splashed or picked up during expansion in the pick-up process. It is more preferable that it is 0.03 N / 25 mm or more because there is a possibility that the surrounding chips may be peeled off together and splashed at the time.

Although the structure of the adhesive composition which comprises the adhesive layer 12 in the tape for a wafer process of this invention is not specifically limited, In order to improve the pick-up property after dicing, it is preferable that it is energy ray curable, and the adhesive bond layer 13 after hardening It is preferable that it is a material which becomes easy to peel. Specifically, in the pressure-sensitive adhesive composition, an energy ray-curable carbon-carbon double bond containing (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms as the base resin and having an iodine value of 5 to 30 is contained. Having a polymer (A) which has is illustrated. In addition, an energy ray means ionizing radiation, such as a light ray like an ultraviolet-ray, or an electron beam here.

Moreover, about the adhesive composition which comprises the adhesive layer 12, it is more preferable to make a gel fraction 60% or more. This is because if the gel fraction is low, the crosslinking degree of the resin is low and the low molecular weight component is increased, so that the low molecular weight component floats on the pressure-sensitive adhesive surface and can lead to contamination of the chip surface or contamination of the adhesive layer. When the adhesive layer is contaminated, the adhesive layer may be peeled off during the wafer processing, or the low molecular weight component may be volatilized in the thermocompression bonding during the mold resin encapsulation of the semiconductor chip to cause voids to form.

In such a polymer (A), the preferable introduction amount of an energy ray-curable carbon-carbon double bond is 5-30 by iodine value, More preferably, it is 10-20. This is because the polymer (A) itself has stability and manufacturing becomes easy. Moreover, when iodine value is less than 5, the effect of reducing the adhesive force after energy ray irradiation may not fully be acquired. When the iodine value is greater than 30, the fluidity of the pressure-sensitive adhesive after energy ray irradiation becomes insufficient, and the gap between chips after expansion of the wafer processing tape 10 cannot be sufficiently obtained, and image recognition of each chip at the time of pickup is It may become difficult.

The polymer (A) preferably has a glass transition temperature of -70 ° C to 15 ° C and more preferably -66 ° C to -28 ° C. If the glass transition temperature is -70 ° C or higher, the heat resistance to heat accompanying energy ray irradiation is sufficient, and if the glass transition temperature is 15 ° C or lower, the scattering prevention effect of the chip after dicing can be sufficiently obtained on a rough surface wafer.

The polymer (A) described above may be produced by any method, but for example, may be obtained by mixing an acrylic copolymer and a compound having an energy ray-curable carbon-carbon double bond, or an acrylic copolymer or a functional group having a functional group. What is obtained by making the methacryl-type copolymer (A1) which has the thing, the functional group which can react with the functional group, and the compound (A2) which has an energy-ray-curable carbon-carbon double bond react is used.

Among these, as a methacryl-type copolymer (A1) which has the said functional group, it has a monomer (A1-1) which has a carbon-carbon double bond, such as an alkyl acrylate or an alkyl methacrylate, and a carbon-carbon double bond. Moreover, what is obtained by copolymerizing the monomer (A1-2) which has a functional group is illustrated. Examples of the monomer (A1-1) include hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, and an alkyl chain having 6 to 12 carbon atoms. Pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate or the same methacrylate thereof, etc. which are monomers of 5 or less carbon atoms of an aryl acrylate or an alkyl chain can be mentioned.

Moreover, when there are many components with less than 6 carbon atoms of an alkyl chain in monomer (A1-1), the peeling force of an adhesive layer and an adhesive bond layer may become large, and a problem, such as a chip crack, may arise in a pick-up process. In addition, when there are many components with a carbon number larger than 12, since it becomes easy to become a solid at room temperature, workability is inadequate, sufficient adhesive force of an adhesive layer and an adhesive bond layer cannot be obtained, a shift | offset | difference in an interface arises, and at the time of segmentation of an adhesive bond layer Problems may arise.

As the monomer (A1-1), the glass transition temperature is lower as the monomer having a larger carbon number in the alkyl chain is used. Thus, the pressure-sensitive adhesive composition having a desired glass transition temperature can be prepared by appropriate selection. In addition, it is also possible to mix low molecular weight compounds having carbon-carbon double bonds such as vinyl acetate, styrene and acrylonitrile for the purpose of improving various performances such as compatibility in addition to the glass transition temperature. In this case, these low molecular weight compounds shall be mix | blended within the range of 5 mass% or less of the gross mass of monomer (A1-1).

On the other hand, as a functional group which monomer (A1-2) has, a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, an isocyanate group, etc. are mentioned. Specific examples of the monomer (A1-2) include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, and glycol monoacrylates. Elates, glycol monomethacrylates, N-methylol acrylamide, N-methylol methacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides And methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether and the like.

And as a functional group used in a compound (A2), when the functional group which a compound (A1) has is a carboxyl group or a cyclic acid anhydride, a hydroxyl group, an epoxy group, an isocyanate group, etc. are mentioned, In the case of a hydroxyl group, a cyclic acid anhydride group is mentioned. And an isocyanate group etc. are mentioned, In the case of an amino group, an epoxy group, an isocyanate group, etc. are mentioned, In the case of an epoxy group, a carboxyl group, a cyclic acid anhydride group, an amino group, etc. are mentioned. As a specific example of a compound (A2), the thing similar to what was listed as the specific example of monomer (A1-2) can be mentioned. As the compound (A2), a part of the isocyanate group of the polyisocyanate compound may be urethane-ized with a monomer having a hydroxyl group or a carboxyl group and an energy ray-curable carbon-carbon double bond.

In the reaction between Compound (A1) and Compound (A2), however, by leaving unreacted functional groups, a desired one can be produced with respect to properties such as acid value or hydroxyl value. If the OH group is left so that the hydroxyl value of the polymer (A) is 5 to 100, the risk of pickup miss can be further reduced by reducing the adhesive force after energy ray irradiation. Moreover, when leaving a COOH group so that the acid value of a polymer (A) may be 0.5-30, the effect of improving the recoverability of the adhesive layer after extending the tape for wafer processing of this invention is obtained, and it is preferable. Here, when the hydroxyl value of a polymer (A) is too low, the adhesive force reduction effect after energy-beam irradiation is not enough, and when too high, it exists in the tendency to impair the fluidity | liquidity of an adhesive after energy-beam irradiation. If the acid value is too low, the effect of improving tape recoverability is not sufficient. If the acid value is too high, it tends to impair the fluidity of the pressure-sensitive adhesive.

In the synthesis of the polymer (A), as the organic solvent when the reaction is carried out by solution polymerization, ketone-based, ester-based, alcohol-based, or aromatic-based ones can be used. Among them, toluene, ethyl acetate, and isopropyl alcohol. Benzene methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone and the like are generally good solvents for acrylic polymers and solvents having a boiling point of 60 to 120 ° C are preferred. As a polymerization initiator, radical generators, such as azobis type | system | groups, such as (alpha), (alpha) '-azobisisobutyronitrile, and organic peroxides, such as benzoyl peroxide, are used normally. At this time, a catalyst and a polymerization inhibitor can be used together as needed, and the polymer (A) of desired molecular weight can be obtained by adjusting superposition | polymerization temperature and superposition | polymerization time. In addition, it is preferable to use a mercaptan and a carbon tetrachloride solvent about adjusting molecular weight. In addition, this reaction is not limited to solution polymerization, It does not interfere with other methods, such as block polymerization and suspension polymerization.

Although the polymer (A) can be obtained by the above methods, in the present invention, the molecular weight of the polymer (A) is preferably about 500,000 to 1 million. If it is less than 500,000, cohesion force becomes small, the shift | offset | difference at the interface with an adhesive bond layer is easy to occur at the time of expansion, sufficient tension force is not transmitted to an adhesive bond layer, and division of an adhesive bond layer may become inadequate. In order to prevent this deviation as much as possible, it is preferable that molecular weight is 500,000 or more. Moreover, when molecular weight exceeds 1 million, there exists a possibility to gelatinize at the time of synthesis | combination and coating. In addition, in this invention, molecular weight is polystyrene conversion mass mean molecular weight.

In addition, in the tape 10 for wafer processing of this invention, the resin composition which comprises the adhesive layer 12 may have the compound (B) which acts as a crosslinking agent further in addition to a polymer (A). Specifically, it is at least 1 sort (s) of compound chosen from polyisocyanate, melamine formaldehyde resin, and an epoxy resin. These can be used individually or in combination of 2 or more types. This compound (B) reacts with a polymer (A) or a base film, and can improve the cohesion force of the adhesive which has the polymer (A) and (B) as a main component after coating an adhesive composition by the resulting crosslinked structure. have.

There is no restriction | limiting in particular as polyisocyanate, For example, 4,4'- diphenylmethane diisocyanate, tolylene diisocyanate, xylene diisocyanate, 4,4'- diphenyl ether diisocyanate, 4,4'- Aromatic isocyanates such as [2,2-bis (4-phenoxyphenyl) propane] diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'- Dicyclohexyl methane diisocyanate, 2,4'- dicyclohexyl methane diisocyanate, lysine diisocyanate, lysine triisocyanate, etc. are mentioned, Specifically, coronate L (made by Nippon Polyurethane Co., Ltd. brand name) etc. can be used. Can be. As melamine formaldehyde resin, Nikarak MX-45 (made by Sanwa Chemical Co., Ltd. brand name), meran (made by Hitachika Seikokyo Co., Ltd. brand name) etc. can be used specifically ,. As an epoxy resin, TETRAD-X (made by Mitsubishi Chemical Corporation, brand name) etc. can be used. In this invention, it is especially preferable to use polyisocyanate.

As addition amount of a compound (B), it is chosen so that it may become a compounding ratio of 0.1-10 mass parts with respect to 100 mass parts of polymers (A), Preferably it is 0.5-5 mass parts. By selecting in this range, it can be set as appropriate cohesion force and a crosslinking reaction does not advance rapidly, and workability | operativity, such as compounding and application | coating of an adhesive, becomes favorable.

In addition, in this invention, it is preferable that the adhesive layer 12 contains the photoinitiator (C). There is no restriction | limiting in particular in the photoinitiator (C) contained in the adhesive layer 12, What is conventionally known can be used. For example, benzophenones such as benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, acetophenone, diethoxyacetophenone and the like Anthraquinones such as acetophenones, 2-ethyl anthraquinone and t-butyl anthraquinone, 2-chloro thioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triaryl Imidazole dimers (ropin dimers), acridine-based compounds, and the like. These may be used alone or in combination of two or more. As addition amount of a photoinitiator (C), it is preferable to set it as 0.1-10 mass parts with respect to 100 mass parts of polymers (A), and it is more preferable to set it as 0.5-5 mass parts.

To the energy ray-curable pressure-sensitive adhesive used in the present invention, a tackifier, a pressure-sensitive adhesive agent, a surfactant, or the like, or other modifiers may be further blended as necessary. Further, an inorganic compound filler may be appropriately added.

Although the thickness of the adhesive layer 12 is not specifically limited, At least 5 micrometers, More preferably, it is 10 micrometers or more. The pressure-sensitive adhesive layer 12 may be a structure in which a plurality of layers are laminated.

<Adhesive Layer>

In the tape for wafer processing of the present invention, the adhesive layer 13 is peeled off from the pressure-sensitive adhesive layer 12 and adhered to the chip when the wafer is bonded and diced and then the chip is picked up. And it is used as an adhesive agent when fixing a chip to a board | substrate or a lead frame. Although the adhesive bond layer 13 is not specifically limited, What is necessary is just a film adhesive generally used for a wafer, and an acrylic point adhesive, a blend type adhesive of epoxy resin / phenol resin / acrylic resin, etc. are preferable. Although the thickness may be set suitably, about 5-100 micrometers is preferable.

In the tape 10 for wafer processing of the present invention, the adhesive layer 13 may be formed by directly or indirectly laminating a filmed film (hereinafter referred to as an "adhesive film") on the base film 11. It is preferable to make temperature into the range of 10-100 degreeC, and to add the linear pressure of 0.01-10 N / m. In addition, such an adhesive film may be one in which an adhesive layer 13 is formed on the separator, and in that case, the laminate may be peeled off after lamination, or the wafer may be used as a cover film of the wafer processing tape 10 as it is. You may peel when joining.

Although the said adhesive film may be laminated | stacked on the whole surface of the adhesive layer 12, you may laminate | stack the adhesive film cut | disconnected (precut) to the adhesive layer 12 in the shape according to the wafer joined previously. Thus, when laminating | stacking the adhesive film which concerns on a wafer, as shown in FIG. 3, the adhesive bond layer 13 exists in the part to which the wafer W is bonded, and the adhesive bond layer (in the part to which the ring frame 20 is bonded) ( 13) and only the adhesive layer 12 exists. In general, since the adhesive layer 13 is difficult to be peeled off from the adherend, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12 by using a precut adhesive film. An effect that the pool residue on the ring frame 20 is less likely to be produced.

<Applications>

The wafer processing tape 10 of the present invention is used in a method of manufacturing a semiconductor device including an expand process of dividing the adhesive layer 13 by at least expansion. Therefore, other processes, the order of the process, and the like are not particularly limited. For example, it can use suitably by the following manufacturing methods (A)-(D) of a semiconductor device.

Manufacturing method of semiconductor device (A)

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C;

(d) peeling the surface protection tape from the wafer surface;

(e) irradiating a laser beam to a portion to be divided of the wafer to form a modified region by multiphoton absorption in the wafer;

(f) an expanding step of dividing the wafer and the adhesive layer between the wafer processing tape along a dividing line by expanding the wafer processing tape to obtain a plurality of chips including the adhesive layer;

(g) in the wafer processing tape after expansion, by heat shrinking a portion which does not overlap with the chip to remove looseness caused by the expand process to maintain the gap between the chips;

(h) picking up the chip containing the adhesive layer from the pressure-sensitive adhesive layer of the tape for wafer processing;

Method for manufacturing a semiconductor device comprising a.

Manufacturing method of semiconductor device (B)

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C;

(d) peeling the surface protection tape from the wafer surface;

(e) irradiating a laser beam along a dividing line on the surface of the wafer to divide the wafer into chips;

(f) an expanding step of dividing the adhesive layer for each chip by expanding the wafer processing tape to obtain a plurality of chips including the adhesive layer;

(g) in the wafer processing tape after expansion, by heat shrinking a portion which does not overlap with the chip to remove looseness caused by the expand process to maintain the gap between the chips;

(h) picking up the chip containing the adhesive layer from the pressure-sensitive adhesive layer of the tape for wafer processing;

Method for manufacturing a semiconductor device comprising a.

Manufacturing method of semiconductor device (C)

(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;

(b) a backgrinding process for grinding the back surface of the wafer,

(c) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C;

(d) peeling the surface protection tape from the wafer surface;

(e) cutting the wafer along a dividing line using a dicing blade to divide the wafer into chips;

(f) an expanding step of dividing the adhesive layer for each chip by expanding the wafer processing tape to obtain a plurality of chips including the adhesive layer;

(g) in the wafer processing tape after expansion, by heat shrinking a portion which does not overlap with the chip to remove looseness caused by the expand process to maintain the gap between the chips;

(h) picking up the chip containing the adhesive layer from the pressure-sensitive adhesive layer of the tape for wafer processing;

Method for manufacturing a semiconductor device comprising a.

Manufacturing method of semiconductor device (D)

(a) cutting the wafer on which the circuit pattern is formed, using a dicing blade to a depth less than the thickness of the wafer along a line to be divided;

(b) bonding a surface protection tape to the wafer surface;

(c) a backgrinding process of grinding the wafer back surface and dividing it into chips;

(d) bonding the adhesive layer of the tape for wafer processing to the back surface of the wafer segmented with the chip while the wafer is heated to 70 to 80 ° C;

(e) peeling a surface protection tape from the surface of the wafer segmented with the chip;

(f) an expanding step of dividing the adhesive layer for each chip by expanding the wafer processing tape to obtain a plurality of chips including the adhesive layer;

(g) a step of maintaining the gap between the chips by removing the looseness caused by the expand process by heat shrinking a portion of the wafer processing tape after expansion that does not overlap with the chips;

(h) picking up the chip containing the adhesive layer from the pressure-sensitive adhesive layer of the tape for wafer processing;

Method for manufacturing a semiconductor device comprising a.

<How to use>

The tape use method in the case where the wafer processing tape 10 of the present invention is applied to the manufacturing method (A) of the semiconductor device will be described with reference to FIGS. 2 to 5. First, as shown in FIG. 2, the surface protection tape 14 for circuit pattern protection which contains an ultraviolet curable component in an adhesive is bonded to the surface of the wafer W in which the circuit pattern was formed, and the back surface of the wafer W is ground. The backgrinding process is performed.

After completion of the backgrinding process, as shown in FIG. 3, the wafer W is placed on the heater table 25 of the wafer mounter with the surface side facing downward, and then the wafer processing tape is placed on the back surface of the wafer W. Join (10). The tape 10 for wafer processing used here is a lamination | stacking of the adhesive film cut | disconnected previously (precut) to the shape according to the wafer W to bond, and the adhesive bond layer 13 from the surface joined with the wafer W The pressure-sensitive adhesive layer 12 is exposed around the exposed area. The portion where the adhesive layer 13 of the tape 10 for wafer processing is exposed and the back surface of the wafer W are bonded to each other, and the portion where the adhesive layer 12 around the adhesive layer 13 is exposed and the ring frame 20 are exposed. ). At this time, the heater table 25 is set to 70-80 degreeC, and heat joining is performed by this.

Next, the wafer W to which the wafer processing tape 10 is bonded is taken out from above the heater table 25, and as shown in FIG. 4, the wafer processing tape 10 side faces downward and the adsorption table 26 is shown. ) On the top. And the ultraviolet-ray of 1000 mJ / cm <2> is irradiated to the base surface side of the surface protection tape 14 using the energy ray light source 27 from the upper side of the wafer W adsorbed and fixed to the adsorption table 26, The adhesive force of the surface protection tape 14 to the wafer W is lowered, and the surface protection tape 14 is peeled off from the wafer W surface.

Next, as shown in FIG. 5, laser beam is irradiated to the part to be divided of the wafer W, and the modified region 32 by multiphoton absorption is formed in the inside of the wafer W. Next, as shown in FIG.

Next, as shown to Fig.6 (a), the wafer processing tape 10 to which the wafer W and the ring frame 20 were bonded is made to face down to the base film 11 side, Place it on the stage 21.

Next, as shown in FIG. 6 (b), the hollow cylindrical pushing member 22 of the expander is raised in a state where the ring frame 20 is fixed, thereby expanding the tape 10 for wafer processing ( Expand). As expansion conditions, an expansion speed is 5-500 mm / sec, for example, and an expansion amount (push amount) is 5-25 mm, for example. In this way, the wafer processing tape 10 is stretched in the radial direction of the wafer W, and the wafer W is divided into chips 34 in units of the modified region 32 as a starting point. At this time, the portion of the adhesive layer 13 adhered to the back surface of the wafer W is prevented from elongation (deformation) due to expansion and breakage does not occur, but at the position between the chips 34, the tension due to the expansion of the tape. This is broken by concentration. Therefore, as shown to FIG. 6 (c), the adhesive bond layer 13 will also be segmented with the wafer W. As shown to FIG. For this reason, the some chip | tip 34 in which the adhesive bond layer 13 was included can be obtained. For this reason, it is preferable that the breaking elongation of the adhesive bond layer 13 is smaller than the breaking elongation of the base film 11 and the adhesive layer 12. FIG.

Next, as shown in FIG. 7, the pushing member 22 is returned to the original position, the looseness of the tape 10 for a wafer process which arose in the previous expansion process is removed, and the space | interval of the chip | tip 34 is stabilized. To maintain the temperature. In this step, for example, a warm air nozzle 29 is used for the region where the chip 34 exists in the wafer processing tape 10 and the annular heating contraction region 28 between the ring frame 20. The hot air of 90-120 degreeC is made to heat-shrink the base film 11, and the tape 10 for a wafer process is tensioned. Thereafter, the pressure-sensitive adhesive layer 12 is subjected to an energy ray-curing treatment, a thermosetting treatment, or the like to weaken the adhesive force to the adhesive layer 13 of the pressure-sensitive adhesive layer 12, and then picks up the chip 34.

Example

Next, in order to make the effect of this invention clearer, an Example and a comparative example are demonstrated in detail, but this invention is not limited to these Examples.

[Production of Wafer Processing Tape]

(1) Production of base film

Zinc ionomer (density 0.96 g / cm 3, zinc ion content 4 mass%, chlorine content 1 mass%) of ethylene-methacrylic acid-ethyl methacrylate (mass ratio 8: 1: 1) terpolymer copolymer synthesized according to the radical polymerization method Resin beads having a viscosity of less than 56 ° C. and a melting point of 86 ° C.) were melted at 140 ° C., and molded into an elongated film having a thickness of 100 μm using an extruder to produce a base film.

(2) Preparation of Acrylic Copolymer

(a-1)

An acrylic copolymer (A1) having a functional group, which is composed of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate, and acrylic acid, and has a ratio of 2-ethylhexyl acrylate of 60 mol% and a mass average molecular weight of 800,000. Was prepared. Then, 2-isocyanatoethyl methacrylate is added so that the iodine value becomes 20, and an acrylic copolymer (a-1) having a glass transition temperature of -60 ° C, a hydroxyl value of 60 mgKOH / g and an acid value of 5 mgKOH / g is obtained. It prepared.

(a-2)

Acrylic copolymer (A1) having a functional group, which is composed of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and acrylic acid, and the ratio of 2-ethylhexyl acrylate is 80 mol% and the mass average molecular weight is 700,000. The coalescence was prepared. Then, 2-isocyanatoethyl methacrylate is added so that the iodine number becomes 15, and an acrylic copolymer (a-2) having a glass transition temperature of -70 ° C, a hydroxyl value of 20 mgKOH / g and an acid value of 5 mgKOH / g is obtained. It prepared.

(a-3)

As the acrylic copolymer (A1) having a functional group, a copolymer consisting of dodecyl acrylate, 2-hydroxyethyl acrylate and acrylic acid, having a proportion of dodecyl acrylate of 60 mol% and a mass average molecular weight of 800,000 was prepared. . Then, 2-isocyanatoethyl methacrylate is added so that the iodine value becomes 20, and an acrylic copolymer (a-3) having a glass transition temperature of -5 ° C, a hydroxyl value of 60 mgKOH / g and an acid value of 5 mgKOH / g is obtained. It prepared.

(a-4)

As the acrylic copolymer (A1) having a functional group, a copolymer consisting of lauryl acrylate, 2-hydroxyethyl acrylate and acrylic acid, having a lauryl acrylate ratio of 60 mol% and a mass average molecular weight of 800,000 was prepared. . Next, 2-isocyanatoethyl methacrylate is added so that an iodine number becomes 20, and an acrylic copolymer (a-4) having a glass transition temperature of 5 ° C, a hydroxyl value of 60 mgKOH / g and an acid value of 5 mgKOH / g is prepared. It was.

(a-5)

As an acrylic copolymer (A1) which has a functional group, the copolymer which consists of lauryl acrylate, 2-hydroxyethyl acrylate, and acrylic acid and whose ratio of lauryl acrylate is 80 mol% and a mass mean molecular weight 750,000 was prepared. . Then, 2-isocyanatoethyl methacrylate is added so that the iodine number becomes 15, and an acrylic copolymer compound (a-5) having a glass transition temperature of 10 ° C, a hydroxyl value of 20 mgKOH / g and an acid value of 5 mgKOH / g is added. It prepared.

(a-6)

Acrylic copolymer (A1) having a functional group, which is composed of 2-ethylhexyl acrylate, lauryl acrylate, 2-hydroxyethyl acrylate and acrylic acid, and the ratio of 2-ethylhexyl acrylate and lauryl acrylate combined This copolymer having 60 mol% and a mass average molecular weight of 800,000 was prepared. Next, 2-isocyanatoethyl methacrylate is added so that the iodine number becomes 20, and the acrylic copolymer compound (a-6) having a glass transition temperature of -30 ° C, a hydroxyl value of 50 mgKOH / g and an acid value of 5 mgKOH / g Was produced.

(a-7)

Acrylic copolymer (A1) having a functional group, which is composed of 2-ethylhexyl acrylate, lauryl acrylate, 2-hydroxyethyl acrylate and acrylic acid, and the ratio of 2-ethylhexyl acrylate and lauryl acrylate combined This copolymer having 80 mol% and a mass average molecular weight of 700,000 was prepared. Next, 2-isocyanatoethyl methacrylate is added so that the iodine number becomes 20, and the acrylic copolymer compound (a-7) having a glass transition temperature of -10 ° C, a hydroxyl value of 20 mgKOH / g, and an acid value of 5 mgKOH / g Was produced.

(a-8)

As an acrylic copolymer (A1) which has a functional group, it consists of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate, and acrylic acid, and the ratio of 2-ethylhexyl acrylate is 55 mol%, and the mass average molecular weight is 800,000. The coalescence was prepared. Then, 2-isocyanatoethyl methacrylate is added so that the iodine number becomes 20, and the acrylic copolymer compound (a-8) having a glass transition temperature of -55 ° C, a hydroxyl value of 80 mgKOH / g and an acid value of 5 mgKOH / g Was produced.

(a-9)

As an acrylic copolymer (A1) which has a functional group, the copolymer which consists of butyl acrylate, 2-hydroxyethyl acrylate, and acrylic acid, and whose ratio of butyl acrylate is 60 mol% and a mass average molecular weight 800,000 was prepared. Next, 2-isocyanatoethyl methacrylate is added so that the iodine number becomes 20, and the acrylic copolymer compound (a-9) having a glass transition temperature of -40 ° C, a hydroxyl value of 60 mgKOH / g and an acid value of 5 mgKOH / g Was produced.

(3) Preparation of Adhesive Composition

(d-1)

36 parts by mass of epoxy resin "YDCN-703" (manufactured by Tokasei Co., Ltd., product name, cresol novolac-type epoxy resin, epoxy equivalent 210), and phenol resin "Milex XLC-LL" as a curing agent of epoxy resin (Mitsuka Chemical Co., Ltd.) 30.1 mass parts of manufacture, a brand name, a phenol resin, 2.1 mass parts of "A-1160" (the Nippon Unicar Co., Ltd. brand name) which is a silane coupling agent, and 1.1 mass part of "A-189" (the Nippon Unicar Co., Ltd. brand name) And cyclohexanone in a composition composed of 21.2 parts by mass of "aerosil R972" (manufactured by Nippon Aerosol Co., Ltd., product name, average particle diameter: 0.016 µm, specific surface area 120 m 2 / g) which is a silica filler (particle). After addition and stirring and mixing, the mixture was further kneaded for 90 minutes using a bead mill.

"HTR-860P-3" which is an acrylic rubber (high molecular weight component) containing 3 mass% of monomer units derived from glycidyl acrylate or glycidyl methacrylate here (manufactured by Nagase Chemtex Co., Ltd., brand name, 200 parts by mass of a mass average molecular weight of 800,000) and 0.075 parts by mass of "Curazole 2PZ-CN" (manufactured by Shikoku Chemical Co., Ltd., product name, 1-cyanoethyl-2-phenylimidazole) as a curing accelerator were added and stirred. It mixed, and obtained adhesive composition (d-1).

(d-2)

50 parts by mass of epoxy resin "YDCN-703" (manufactured by Tokasei Co., Ltd., trade name, cresol novolac-type epoxy resin, epoxy equivalent 210), and a phenolic resin "Milex XLC-LL" (Mitsuka Chemical) Manufacture, A brand name, a phenol resin) 30.1 mass parts, 4.3 mass parts of "A-1160" (the Nippon Unicar Co., Ltd. make, brand name) which is a silane coupling agent, and "A-189" (the Nippon Unicar Co., Ltd. make, brand name) 1.1 Cyclohexaxane in the composition which consists of a mass part and 50 mass parts of "aerosil R972" (The Nippon Aerosil Co., Ltd. make, brand name, average particle diameter: 0.016 micrometer, specific surface area 120m <2> / g) which is a silica filler (particle). Rice paddy was added, stirred and mixed, and then kneaded again for 90 minutes using a bead mill.

"HTR-860P-3" which is an acrylic rubber (high molecular weight component) containing 3 mass% of monomer units derived from glycidyl acrylate or glycidyl methacrylate here (manufactured by Nagase Chemtex Co., Ltd., brand name, 200 parts by mass of a mass average molecular weight of 800,000) and 0.01 part by mass of "Curazole 2PZ-CN" (manufactured by Shikoku Chemical Co., Ltd., product name, 1-cyanoethyl-2-phenylimidazole) as a curing accelerator were added and stirred. It mixed and obtained the varnish of an adhesive composition.

&Lt; Example 1 >

To 100 parts by mass of the acrylic copolymer (a-1), 5 parts by mass of coronate L (manufactured by Nippon Polyurethane) was added as a polyisocyanate, and 3 parts by mass of Irgacua 184 (manufactured by Nihon Chiba Co., Ltd.) as a photopolymerization initiator. The added mixture was dissolved in ethyl acetate and stirred to prepare an adhesive composition.

Next, the pressure-sensitive adhesive composition is coated on a release liner made of a polyethylene-terephthalate film subjected to a release treatment so as to have a thickness of 10 μm after drying, dried at 110 ° C. for 3 minutes, and then bonded to the base film to form an adhesive on the base film. A pressure-sensitive adhesive sheet was formed.

Next, the adhesive composition (d-1) is coated on a release liner made of a polyethylene-terephthalate film subjected to a release treatment so as to have a thickness of 20 μm after drying, and dried at 110 ° C. for 5 minutes, whereby an adhesive layer is placed on the release liner. The formed adhesive film was produced.

The adhesive sheet was cut into the shape shown in Fig. 3 and the like, which can be bonded to the ring frame to cover the opening. In addition, the adhesive film was cut out to the shape shown in FIG. 3 etc. which can cover the wafer back surface. And the adhesive layer side of the said adhesive sheet and the adhesive bond layer side of the said adhesive film were bonded so that the part which the adhesive layer 12 is exposed may be formed around the adhesive film as shown in FIG. 3 etc., and the tape for a wafer process was produced.

<Example 2>

Except having used the acryl-type copolymer (a-2), it carried out similarly to Example 1, and prepared the adhesive composition. Using this pressure-sensitive adhesive composition, a tape for wafer processing was produced by the same method as in Example 1.

&Lt; Example 3 >

Except having used the acryl-type copolymer (a-3), it carried out similarly to Example 1, and prepared the adhesive composition. Using this pressure-sensitive adhesive composition, a tape for wafer processing was produced by the same method as in Example 1.

<Example 4>

Except having used the acryl-type copolymer (a-4), it carried out similarly to Example 1, and prepared the adhesive composition. Using this pressure-sensitive adhesive composition, a tape for wafer processing was produced by the same method as in Example 1.

&Lt; Example 5 >

Except having used the acryl-type copolymer (a-5), it carried out similarly to Example 1, and prepared the adhesive composition. Using this pressure-sensitive adhesive composition, a tape for wafer processing was produced by the same method as in Example 1.

&Lt; Example 6 >

Except having used the acryl-type copolymer (a-6), it carried out similarly to Example 1, and prepared the adhesive composition. Using this pressure-sensitive adhesive composition, a tape for wafer processing was produced by the same method as in Example 1.

&Lt; Example 7 >

Except having used the acryl-type copolymer (a-7), it carried out similarly to Example 1, and prepared the adhesive composition. Using this pressure-sensitive adhesive composition, a tape for wafer processing was produced by the same method as in Example 1.

&Lt; Example 8 >

A tape for wafer processing was produced in the same manner as in Example 1 except that the adhesive composition (d-2) was used.

&Lt; Example 9 >

A tape for wafer processing was produced in the same manner as in Example 4 except that the adhesive composition (d-2) was used.

&Lt; Comparative Example 1 &

Except having made the compounding quantity of polyisocyanate into 1 mass part, it carried out similarly to Example 1, and prepared the adhesive composition. Using this pressure-sensitive adhesive composition, a tape for wafer processing was produced by the same method as in Example 1.

&Lt; Comparative Example 2 &

Except having made the compounding quantity of polyisocyanate into 2 mass parts using the acryl-type copolymer (a-8), it carried out similarly to Example 1, and prepared the adhesive composition. Using this pressure-sensitive adhesive composition, a tape for wafer processing was produced by the same method as in Example 1.

&Lt; Comparative Example 3 &

Except having used the acryl-type copolymer (a-9), it carried out similarly to Example 1, and prepared the adhesive composition. Using this pressure-sensitive adhesive composition, a tape for wafer processing was produced by the same method as in Example 1.

Evaluation of Physical Properties of Wafer Processing Tapes

(1) Measurement of gel fraction

After weighing about 0.05 g of the pressure-sensitive adhesive layer, it was immersed in 50 mL of xylene at 120 ° C. for 24 hours, filtered through a 200 mesh stainless steel gold mesh, and the insoluble content on the gold mesh was dried at 110 ° C. for 120 minutes. Next, the mass of the dried insoluble content was weighed, and the gel fraction was computed by the formula shown below.

Gel fraction (%) = (mass of insoluble fraction / mass of tackified adhesive layer) * 100

The obtained measurement results are shown in Table 1.

(2) Measurement of shear force

As shown in FIG. 8, the bonding area of the adhesive surface and adhesive surface of each tape for wafer processing before ultraviolet irradiation was made into 10 mm x 10 mm, and the Orient Spat Tape No.830S by Sekisui Chemical Co., Ltd. was used as an auxiliary tape 15 as a wafer. It bonded to the surface opposite to the adhesive bonding surface at the base material surface side and the adhesive bond layer of a processing tape, respectively. Then, as shown in FIG. 9, the part which was not joined was fixed with the peeling measurement fixing member 30, and the shear force was measured at 0 degree peeling and the peeling rate 500 mm / min. However, the tensile stress of the auxiliary tape monolith used here is negligible because it is very large compared to the measured value.

(3) Measurement of peeling force

Ultraviolet rays were irradiated to each sample, and the adhesive force before and after ultraviolet irradiation was measured based on JIS-Z0237. As shown in FIG. 10, after bonding the auxiliary tape 15 to the adhesive bond layer 13 of the tape for a wafer process, the adhesive bond layer 13 side is attached to the support plate 36 using the fixed double-sided tape 38. As shown in FIG. After that, the supporting plate 36 is gripped by the fixing member 30 for one peel measurement, and the adhesive layer 12 and the base film 11 are held by the fixing member 30 for the other peel measurement, The peel force between 12) and the adhesive bond layer 13 was measured. The measurement was carried out at a peel rate of 300 mm / min and a peel angle of 180 ° in a standard state (temperature 23 ° C., relative humidity 50%). A high pressure mercury lamp (365 nm, 30 mW / cm 2, irradiation distance 10 cm) was used as an ultraviolet lamp, and the irradiation intensity was 200 mJ / cm 2. The measurement results are shown in Table 1.

(4) measurement of the rate of fragmentation

By the method shown below, the tape for each wafer process of the said Example and the said comparative example was implemented in the following semiconductor processing process corresponded to the manufacturing method (A) of the said semiconductor device.

(a) The surface protection tape was bonded to the wafer surface in which the circuit pattern was formed.

(b) The backgrinding process which grinds the said wafer back surface was performed.

(c) While the wafer is heated to 70 DEG C, the adhesive layer of the tape for wafer processing is bonded to the back surface of the wafer, and at the same time, the ring frame for wafer processing is exposed without the adhesive layer of the wafer tape being overlapped with the adhesive layer. Bonded with the part.

(d) The surface protection tape was peeled from the said wafer surface.

(e) A laser beam was irradiated to the portion to be divided of the wafer to form a modified region by multiphoton absorption inside the wafer.

(f) By expanding the wafer processing tape by 10%, the wafer and the adhesive layer were divided along the dividing line to obtain a plurality of chips including the adhesive layer.

(g) by heating and shrinking the portion of the wafer processing tape that does not overlap with the chip (the region where the chip is present and the ring frame between the ring frame) at 120 ° C. to remove the looseness caused by the expansion process of (f). The chip spacing was maintained.

(h) The chip containing the adhesive layer was picked up from the pressure-sensitive adhesive layer of the tape for wafer processing.

In the step (f), the dicing ring frame bonded to the wafer processing tape is pressed by Disco Co., Ltd. DDS-2300 with the expand ring of DDS-2300, Disco Co., Ltd. On the site outer periphery, the expansion was performed by pressing a portion which does not overlap with the wafer by a circular pushing member. In addition, as conditions of (f) and (g) process, it was set as an expansion speed of 300 mm / sec, and an amount of expansion (push amount) of 20 mm. Here, the amount of expansion means the amount of change in the relative position of the ring frame and the pushing member before and after pressing.

About the tapes for a wafer process of Examples 1-9 and Comparative Examples 1-3, the division rate of the adhesive bond layer was observed in the said process (f), and the presence or absence of the division of 100 chips was evaluated immediately after the (g) process. The results are shown in Table 1.

(5) Evaluation of pickup properties

(g) After step (h) Before the step (h), 30 mW / cm 2 at 365 nm in a nitrogen atmosphere with a metal halide high-pressure mercury lamp on the surface on the side opposite to the surface on which the point and adhesive layer on the substrate film of the wafer processing tape are laminated. And ultraviolet light under conditions of 200 mJ / cm 2. And pick-up test was carried out with the die picker apparatus (The Canon Machinery Co., brand name CAP-300II) with respect to 100 chips diced at the process (h), and it picks up that the adhesive bond layer peeled from the adhesive layer is hold | maintained. The success rate of the pickup was calculated by this success. The results are shown in Table 1. (Circle), (triangle | delta), and (x) mean the following in a table | surface.

"○". The pick-up success rate at the lifting height 0.5mm and 0.3mm by the pushing pin is 100%.

&Quot; △ " The pickup success rate at the lifting height of 0.5 mm is 100%, but the pickup success rate at the lifting height of 0.3 mm is less than 100%.

&Quot; × " Pickup success rate at push height 0.5mm and 0.3mm is less than 100%.

The results are shown in Table 1.

[Table 1]

As shown in Table 1, the shear force of the adhesive layer 12 and the adhesive bond layer 13 is 0.2N / mm <2> or more, and the peeling force after energy beam irradiation of 200mJ / cm <2> is 0.3N / 25mm or less of Examples 1-9. It was clear that the tape for wafer processing had 100% of a parting ratio of an adhesive bond layer, and had favorable pickup property from evaluation of a pickup success rate. On the other hand, in the comparative example 2 whose shear force of the adhesive layer 12 and the adhesive bond layer 13 is 0.2 N / mm <2> or less, a shift | offset | difference arises in the interface of the adhesive layer 12 and the adhesive bond layer 13, and in the location, Sufficient tensile force was not transmitted, and the adhesive layer 13 could not be sufficiently segmented. On the other hand, in Comparative Example 1 and Comparative Example 3, even if the shearing force was excellent in the dividing property to 0.2N / mm 2 or more, it became clear that the pickup success rate is worsened if the peeling force after energy ray irradiation is 0.3N / 25mm or more.

In addition, the manufacturing methods B to D of the semiconductor device described above are the expand process, the heat shrink process, and the pick-up process in the manufacturing method A of the semiconductor device, except that they are already divided into individual chips in the expand process. It is to carry out the process equivalent to. Therefore, it is clear that the results in the case of using the wafer processing tape 10 of Examples 1 to 9 and Comparative Examples 1 to 3 are equivalent to the results shown in Table 1, and also in the manufacturing methods B to D of the semiconductor device. Use of the wafer processing tape 10 of the present invention is useful from the standpoint of separation and pick-up.

10: wafer processing tape 11: base film
12: adhesive layer 13: adhesive layer
14: surface protection tape 15: auxiliary tape
20: ring frame 21: stage
22: lifting member 25: heater table
26: adsorption table 27: ultraviolet light source
28: heat shrink zone 29: hot air nozzle
30: holding member for peeling measurement 32: modified area
34: chip 36: support plate
38: Double-sided tape for fixing W: Wafer

Claims (10)

A base film, an adhesive layer formed on the base film, and an adhesive layer formed on the pressure-sensitive adhesive layer,
The shear force at 25 ° C. of the pressure-sensitive adhesive layer and the adhesive layer is 0.2 N / mm 2 or more,
Peeling force of the adhesive layer and the adhesive layer at a peeling speed of 300 mm / min and a peeling angle of 180 ° in a standard state according to JIS-Z0237 after energy ray irradiation of 200 mJ / cm 2 is 0.3 N / 25 mm or less. Wafer processing tape. The method of claim 1,
The shear force at 25 ° C of the pressure-sensitive adhesive layer and the adhesive layer is 0.2N / mm 2 or more and 0.5N / mm 2 or less. 3. The method according to claim 1 or 2,
The pressure-sensitive adhesive layer is a wafer processing tape, characterized in that consisting of an adhesive composition having a gel fraction of 60% or more. The method of claim 3,
The said adhesive composition contains 60 mol% or more of (meth) acrylates which have a C6-C12 alkyl chain as a base resin, and has an energy ray curable carbon-carbon double bond whose iodine number is 5-30. Wafer processing tape comprising a polymer. The method of claim 3,
Said adhesive composition contains at least 1 sort (s) of compound chosen from the group which consists of polyisocyanate, a melamine formaldehyde resin, and an epoxy resin, The tape for wafer processing characterized by the above-mentioned. 3. The method according to claim 1 or 2,
The elongation at break of the adhesive layer is smaller than the elongation at break of the base film and the pressure-sensitive adhesive layer. A method of manufacturing a semiconductor device using the tape for wafer processing according to any one of claims 1 to 6,
(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;
(b) a backgrinding process for grinding the back surface of the wafer,
(c) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C;
(d) peeling the surface protection tape from the wafer surface;
(e) irradiating a laser beam to a portion to be divided of the wafer to form a modified region by multiphoton absorption in the wafer;
(f) an expansion step of dividing the adhesive layer between the wafer and the tape for wafer processing along a portion to be divided by expanding the wafer processing tape to obtain a plurality of chips including the adhesive layer;
(g) in the wafer processing tape after expansion, by heat shrinking a portion which does not overlap with the chip to remove looseness caused by the expand process to maintain the gap between the chips;
(h) a pickup step of picking up the chip containing the adhesive layer from the pressure-sensitive adhesive layer of the tape for wafer processing;
Manufacturing method of a semiconductor device comprising a. A method of manufacturing a semiconductor device using the tape for wafer processing according to any one of claims 1 to 6,
(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;
(b) a backgrinding process for grinding the back surface of the wafer,
(c) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C;
(d) peeling the surface protection tape from the wafer surface;
(e) irradiating a laser beam along a dividing line on the surface of the wafer to divide the wafer into chips;
(f) an expansion step of dividing the adhesive layer for each chip by expanding the wafer processing tape to obtain a plurality of chips including the adhesive layer;
(g) a step of maintaining the gap between the chips by removing the looseness caused by the expand process by heat shrinking a portion of the wafer processing tape after expansion that does not overlap with the chips;
(h) a pickup step of picking up the chip containing the adhesive layer from the pressure-sensitive adhesive layer of the tape for wafer processing;
Manufacturing method of a semiconductor device comprising a. A method of manufacturing a semiconductor device using the tape for wafer processing according to any one of claims 1 to 6,
(a) bonding the surface protection tape to the wafer surface on which the circuit pattern is formed;
(b) a backgrinding process for grinding the back surface of the wafer,
(c) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer while the wafer is heated to 70 to 80 ° C;
(d) peeling the surface protection tape from the wafer surface;
(e) cutting the wafer along a dividing line using a dicing blade to divide the wafer into chips;
(f) an expanding step of dividing the adhesive layer for each chip by expanding the wafer processing tape to obtain a plurality of chips including the adhesive layer;
(g) in the wafer processing tape after expansion, by heat shrinking a portion which does not overlap with the chip to remove looseness caused by the expand process to maintain the gap between the chips;
(h) a pickup step of picking up the chip containing the adhesive layer from the pressure-sensitive adhesive layer of the tape for wafer processing;
Manufacturing method of a semiconductor device comprising a. A method of manufacturing a semiconductor device using the tape for wafer processing according to any one of claims 1 to 6,
(a) cutting the wafer on which the circuit pattern is formed, using a dicing blade to a depth less than the thickness of the wafer along a line to be divided;
(b) bonding a surface protection tape to the wafer surface;
(c) a backgrinding process of grinding the wafer back surface and dividing it into chips;
(d) bonding the adhesive layer of the wafer processing tape to the back surface of the wafer segmented by the chip while the wafer is heated to 70 to 80 ° C;
(e) peeling a surface protection tape from the surface of the wafer segmented with the chip;
(f) an expanding step of dividing the adhesive layer for each chip by expanding the wafer processing tape to obtain a plurality of chips including the adhesive layer;
(g) a step of maintaining the gap between the chips by removing the looseness caused by the expand process by heat shrinking a portion of the wafer processing tape after expansion that does not overlap with the chips;
(h) a pickup step of picking up the chip containing the adhesive layer from the pressure-sensitive adhesive layer of the wafer processing tape;
Manufacturing method of a semiconductor device comprising a.

Images