TW201340194A - Wafer-processing tape and method for manufacturing semiconductor device using same - Google Patents

Abstract

The purpose of the present invention is to provide a wafer-processing tape that does not result in displacement at the interface between the adhesive layer and the sticky agent layer due to expansion, that has uniform expansion properties suitable for a step for dividing the adhesive layer, and that has excellent pickup performance. In the present invention, there is used a wafer-processing tape characterized in comprising: a substrate film; a sticky agent layer formed on the substrate film; and an adhesive layer formed on the sticky agent layer; the shear force of the sticky agent layer and the adhesive layer at 25 DEG C being no less than 0.2 N/mm<SP>2</SP>, and the peeling force between the sticky agent layer and the adhesive layer at a peeling angle of 180 DEG and a peeling speed of 300 mm/min in a standard state compliant with JIS-Z0237 after being irradiated by an energy beam of 200 mJ/cm<SP>2</SP> being no greater than 0.3 N/25 mm.

Description

Wafer processing tape and method of manufacturing semiconductor device using same Technical field

The present invention relates to an expandable wafer processing tape or the like for expanding an adhesive layer along a wafer in a manufacturing process of a semiconductor device.

Background technique

The manufacturing process of a semiconductor device such as an IC is a back-grinding step of polishing a wafer on the back surface of a wafer to form a thin film after forming a circuit pattern, and a wafer for processing a wafer having adhesiveness and stretchability is adhered to the back surface of the wafer. a cutting step of cutting a wafer into a wafer unit; an expanding step of expanding (expanding) a wafer processing tape; picking up a wafer to be picked up; and further attaching the picked wafer to a lead frame or a package substrate or the like (or A die bonding (mounting) step of stacking, followed by wafers in a stacked package.

The back grinding step uses a surface protection tape to protect the circuit pattern forming surface (wafer surface) of the wafer from contamination. When the surface protective tape is peeled off from the surface of the wafer after the back surface polishing of the wafer is completed, the wafer processing tape (cutting, die bonding tape) described below is adhered to the back surface of the wafer, and the wafer processing tape is used. The side is fixed on the adsorption tape, and on the surface protection tape, after the treatment for lowering the adhesion force of the wafer is performed, the surface is peeled off. Protective tape. Then, the wafer for peeling the surface protective tape is picked up by the adsorption tape while the wafer processing tape is stuck on the back side, and is supplied to the next cutting step. In addition, when the surface protection tape is composed of an energy ray-curable component such as ultraviolet rays, the treatment for lowering the adhesion force is an energy ray irradiation treatment, and the surface protection tape is heat-treated when the thermosetting component is used.

The cutting step to the mounting step after the back grinding step is performed by using a tape for wafer processing in which an adhesive layer and an adhesive layer are sequentially laminated on a substrate film. Generally, when a wafer is used, first, an adhesive layer of a wafer processing tape is adhered to the back surface of the wafer and the wafer is fixed, and the wafer and the adhesive layer are cut into wafer units using a dicing blade. Then, by expanding the tape radially, the expansion step of expanding the spacing of the wafers from each other is performed. This expansion step is carried out in order to improve the visibility of the CCD camera or the like in the subsequent pickup step, and at the same time prevent the wafer from being damaged by the contact of the adjacent wafers when picking up the wafer. Then, by the pickup step, the adhesive layer is peeled off together with the adhesive layer and the wafer is picked up, and by the mounting step, the wafer is directly attached to the lead frame or the package substrate or the like. Thus, by using the tape for wafer processing, the wafer with the adhesive layer can be directly attached to the lead frame or the package substrate, etc., so that the coating step of the adhesive layer can be omitted or the die-bonding film can be subsequently applied to each wafer. The steps.

However, in the foregoing cutting step, as described above, the wafer and the adhesive layer are cut together using the dicing blade, so that not only the chips of the wafer but also the chips of the adhesive layer are generated. Further, when the chips of the adhesive layer are buried in the wafer groove due to the dicing, the wafers are stuck to each other and a pickup failure occurs, and the manufacturing yield of the semiconductor device is lowered.

In order to solve such a problem, it has been proposed that the cutting step is performed by cutting the wafer only by the blade, and in the expanding step, by expanding the wafer processing tape, the adhesive layer is cut one by one. (for example, Patent Document 1). According to the method of cutting the adhesive layer using the tension at the time of expansion, the chips of the adhesive layer are not generated, and the pickup step is not adversely affected.

Further, in recent years, there has been proposed a so-called stealth dicing method in which a wafer cutting method can use a laser processing apparatus to cut a wafer in a non-contact manner. For example, Patent Document 2 discloses a method of cutting a semiconductor substrate as a stealth dicing method, and the method of cutting the semiconductor substrate includes: providing an adhesive layer (die bonding resin layer), and focusing the focus light on the attached sheet Inside the semiconductor substrate, and by irradiating the laser light, forming a modified region generated by multiphoton absorption inside the semiconductor substrate, and using the modified region as a predetermined cutting portion; and, by expanding the adhesive layer, along the predetermined The step of cutting the semiconductor substrate and the adhesive layer by the cutting portion.

Further, as another wafer cutting method using a laser processing apparatus, for example, Patent Document 3 proposes a wafer dividing method, and the wafer dividing method includes: an adhesive layer for bonding a die (followed) The step of mounting the film on the back side of the wafer; the step of adhering the extensible protective adhesive tape on the adhesive layer side of the wafer to which the adhesive layer is adhered; the surface of the wafer to which the adhesive tape is adhered by the adhesive is cut along the surface a step of irradiating the laser light and dividing into individual wafers; and, expanding the protective adhesive tape and applying a tensile force on the adhesive layer, breaking the adhesive layer on each wafer, and causing the adhesive layer to be ruptured by the adhesive The step of detaching the wafer from the protective adhesive tape.

According to the wafers described in Patent Document 2 and Patent Document 3 The cutting method, by the irradiation of the laser light and the expansion of the tape, cuts the wafer in a non-contact manner, so the physical load on the wafer is small, and the wafer cuttings such as the current mainstream stealth cutting are not generated ( In the case of debris, the wafer is cut. Further, since the adhesive layer is cut by expansion, the chips of the adhesive layer are not generated. Therefore, it has become an excellent technology that can replace blade cutting.

As described in the above Patent Documents 1 to 3, in the method of expanding the adhesive layer by expansion, the adhesive layer is surely cut along the wafer on the wafer to be used, and the substrate film is uniformly and isotropically expanded. It must be sufficiently transferred to the adhesive layer. Since an offset occurs at the interface between the adhesive layer and the adhesive layer, sufficient tensile force cannot be transferred to the adhesive layer at this place, and the adhesive layer cannot be cut.

However, in general, a wafer processing tape which does not have an interface offset between an adhesive layer and an adhesive layer causes a problem that the wafer which is cut in the pickup process cannot be peeled off.

Prior technical literature Patent literature

Patent Document 1: JP-A-2007-5530

Patent Document 2: JP-A-2003-338467

Patent Document 3: JP-A-2004-273895

Summary of invention

Therefore, the subject of the present invention is to provide a wafer processing adhesive The tape is not displaced at the interface between the adhesive layer and the adhesive layer due to expansion, has uniform expansion properties suitable for the step of cutting the adhesive layer, and has excellent pick-up property.

In order to solve the above problems, the present invention provides a wafer processing tape as a first aspect, characterized by a substrate film, an adhesive layer formed on the substrate film, and a subsequent layer formed on the adhesive layer. The coating layer is formed, and the adhesive layer and the adhesive layer have a shear force of 0.2 N/mm ² or more at 25 ° C, and a peeling speed of 300 mm according to the JIS-Z0237 standard state after irradiation with an energy beam of 200 mJ/cm ^{2 .} The peeling force of the adhesive layer and the adhesive layer of the /min and the peeling angle of 180° is 0.3 N/25 mm or less.

In the first aspect, the adhesive layer at the 25° C. of the adhesive layer and the adhesive layer is 0.2 N/mm ² or more and 0.5 N/mm ² or less, and the adhesive layer is composed of a gel fraction of 60. % or more of the adhesive composition, and the above-mentioned adhesive composition contains 60 mol% or more of a (meth) acrylate having an alkyl chain of 6 to 12 carbon atoms as a base resin, and contains an iodine value of 5 to 30 The energy ray-curable carbon-carbon double bond polymer, and particularly preferably, the adhesive composition contains at least one selected from the group consisting of polyisocyanates, melamine ‧ formaldehyde resins, and epoxy resins Compound. The reason for this is that peeling from the adhesive layer does not occur at the time of die bonding, and there is a degree of retention which does not cause defects such as wafer scattering, and a property of being easily peeled off from the adhesive layer at the time of pick-up, and the adhesive layer can be avoided. The low molecular weight component floats on the surface of the adhesive and detaches to contaminate the surface of the wafer or the adhesive layer, and a tape for wafer processing which is easy to manufacture and which improves the cohesive force of the adhesive can be obtained.

Moreover, the present invention provides a method of manufacturing a semiconductor device as a second aspect, which is a method of manufacturing a semiconductor device using the tape for wafer processing according to the first aspect, characterized in that it comprises: (a) bonding a surface protective tape a step of forming a wafer surface having a circuit pattern; (b) grinding a back surface grinding step of the wafer back surface; (c) processing the wafer wafer while heating the wafer to 70 to 80 ° C a step of bonding the adhesive layer of the tape to the back surface of the wafer; (d) a step of peeling off the surface protective tape from the surface of the wafer; (e) irradiating the laser beam at a predetermined divided portion of the wafer, and a step of forming a modified region by multiphoton absorption inside the wafer; (f) cutting the wafer and the aforementioned adhesive for the wafer processing tape along the cutting line by expanding the wafer processing tape a step of obtaining a plurality of wafers with the aforementioned adhesive layer; (g) heat-shrinking a portion of the tape for processing the wafer after the expansion, which is not overlapped with the wafer, thereby removing the expansion Step middle production a step of relaxing the gap between the wafers; and (h) picking up the wafer with the adhesive layer from the adhesive layer of the wafer processing tape.

Moreover, the present invention provides a method of manufacturing a semiconductor device as a third aspect, which is a method of manufacturing a semiconductor device using the tape for wafer processing of the first aspect, characterized in that it comprises: (a) a step of attaching a surface protective tape to the surface of the wafer on which the circuit pattern has been formed; (b) a step of grinding the back surface of the wafer; (c) heating the wafer to 70 to 80 a step of bonding the adhesive layer of the wafer processing tape to the back surface of the wafer at a temperature of ° C; (d) a step of peeling off the surface protective tape from the surface of the wafer; (e) along the surface of the wafer a cutting line that irradiates the laser light to cut the wafer into a wafer; (f) by expanding the wafer processing tape, and cutting the adhesive layer on each of the wafers to obtain the a step of expanding a plurality of wafers of the agent layer; (g) heat-shrinking a portion of the wafer processing tape after the expansion, which is not overlapped with the wafer, thereby removing slack generated in the expanding step to maintain a step of spacing the wafers; and (h) a step of picking up the wafers with the adhesive layer from the adhesive layer of the wafer processing tape.

Moreover, the present invention provides a method of manufacturing a semiconductor device as a fourth aspect, which is characterized in that: (a) a surface protective tape is bonded to the semiconductor device using the first aspect of the wafer processing tape. a step on the surface of the wafer on which the circuit pattern has been formed; (b) a step of grinding the back surface of the wafer; (c) the wafer is heated to 70 to 80 ° C a step of bonding the adhesive layer of the processing tape to the back surface of the wafer; (d) a step of peeling off the surface protective tape from the surface of the wafer; (e) a step of cutting the wafer by cutting the wafer along the cutting line using a dicing blade; and (f) expanding the wafer processing tape Extending the adhesive layer from each of the wafers to obtain a plurality of wafers with the adhesive layer; (g) in the expanded wafer processing tape, not overlapping the wafer a portion of the heat shrinkage, thereby removing the slack generated in the expanding step to maintain the spacing of the wafers; and (h) picking up the adhesive layer from the adhesive layer of the wafer processing tape The steps of the aforementioned wafer.

Moreover, the present invention provides a method of manufacturing a semiconductor device as a fifth aspect, which is a method of manufacturing a semiconductor device using the above-described first aspect of the wafer processing tape, comprising: (a) using a dicing blade along a predetermined Cutting the wire to form a circuit pattern wafer to a depth less than the thickness of the wafer; (b) a step of bonding the surface protection tape to the surface of the wafer; (c) grinding the back surface of the wafer And cutting the back surface polishing step of the wafer; (d) bonding the adhesive layer of the processing tape to the crystal having been cut into the wafer in a state where the wafer has been heated to 70 to 80 ° C a step of rounding the back surface; (e) a step of peeling off the surface protective tape from the wafer surface of the wafer; (f) expanding the aforesaid adhesive layer by expanding the wafer processing tape a step of expanding the wafer to obtain a plurality of wafers with the adhesive layer; (g) heating and shrinking a portion of the wafer processing tape that has not been overlapped with the wafer after expansion a step of removing the slack generated in the expanding step to maintain the interval between the wafers; and (h) a step of picking up the wafer with the adhesive layer from the adhesive layer of the wafer processing tape.

In the tape for wafer processing of the present invention, since the shear force at the interface between the adhesive layer and the adhesive layer is 0.2 N/mm ² or more, the uniformity and the isotropy of the base film can be sufficiently extended by the adhesive layer when expanding. The layer is transferred to the adhesive layer, and the adhesive layer is efficiently cut. In addition, the peeling force of the adhesive layer and the adhesive layer in accordance with the peeling speed of 300 mm/min in the JIS-Z0237 standard state and the peeling angle of 180° after the irradiation of the energy beam of 200 mJ/cm ^{2 is} 0.3 N/25 mm or less. Therefore, the peeling force is sufficiently lowered to have a good picking performance.

10‧‧‧ Wafer processing tape

11‧‧‧Substrate film

12‧‧‧Adhesive layer

13‧‧‧ adhesive layer

14‧‧‧Surface protection tape

15‧‧‧Auxiliary tape

20‧‧‧ ring frame

21‧‧‧ platform

22‧‧‧ protruding members

25‧‧‧heating station

26‧‧‧Adhesive tape

27‧‧‧UV light source

28‧‧‧heat shrinkage area

29‧‧‧ hot air nozzle

30‧‧‧Removal measuring member

32‧‧‧Modified area

34‧‧‧ wafer

36‧‧‧Support board

38‧‧‧Fixed double-sided tape

W‧‧‧ wafer

1 is a cross-sectional view showing a state in which a tape for wafer processing according to an embodiment of the present invention is bonded to a surface protection tape.

Fig. 2 is a cross-sectional view showing a state in which a surface protective tape is bonded.

3 is a cross-sectional view for explaining a step of adhering a wafer and a ring frame to the tape for wafer processing of the present invention.

4 is a cross-sectional view illustrating the step of peeling off the surface protection tape from the surface of the wafer.

Figure 5 is a cross-sectional view showing a state in which a modified region is formed on a wafer by laser processing.

Fig. 6 (a) is a cross-sectional view showing a state in which the tape for wafer processing of the present invention is mounted on an expansion device. Fig. 6(b) is a cross-sectional view showing a process of cutting a wafer into a wafer by expansion of a tape for wafer processing. Fig. 6(c) is a cross-sectional view showing the wafer processing tape, the adhesive layer, and the wafer after expansion.

Fig. 7 is a cross-sectional view for explaining a heat shrinking step.

FIG. 8 is a cross-sectional view showing a state in which the auxiliary tape is adhered to the substrate side and the adhesive layer side of the wafer processing tape of the present invention in the method of measuring the shear force.

Fig. 9 is a cross-sectional view showing an outline of a method of measuring shear force.

Fig. 10 is a side view showing an outline of a method of measuring peeling force.

Form for implementing the invention

Hereinafter, embodiments of the present invention will be described in detail based on the drawings.

Fig. 1 is a cross-sectional view showing a tape 10 for wafer processing according to an embodiment of the present invention. The wafer processing tape 10 of the present invention cuts the adhesive layer 13 along the wafer when the wafer is cut into wafers by expansion. The wafer processing tape 10 has a base film 11, an adhesive layer 12 provided on the base film 11, and an adhesive layer 13 provided on the adhesive layer 12, and the back surface of the wafer is adhered to the adhesive layer 13 on. Further, each layer may be cut into a predetermined shape (pre-cut) in accordance with a use step or apparatus. Furthermore, the wafer processing tape 10 of the present invention may be in the form of being cut into a wafer portion, or may be a long sheet formed by cutting a plurality of wafers into a wafer, and the long strip is formed. The material is taken into a roll form.

<Substrate film>

The base film 11 is not particularly limited as long as it has uniform and isotropic expansion properties in the expansion step. In general, the cross-linking resin has a large restoring force for stretching as compared with the non-crosslinked resin, and has a large shrinkage stress when heated in a stretched state after the expanding step. Therefore, the slack generated on the tape after the expansion step can be removed by heat shrinkage, whereby the tape can be tensioned and stably maintained at intervals of the respective wafers. Therefore, it is preferred to use a crosslinked resin, particularly a thermoplastic crosslinked resin, as the base film.

Such a thermoplastic crosslinkable resin may, for example, be a crosslinked ethylene-(meth)acrylic acid binary copolymer or ethylene-(meth)acrylic acid-(meth)acrylic acid ionic polymer resin with a metal ion. These resins are suitable for the expansion step because they can be uniformly expanded, and are particularly preferable because the crosslinking causes a strong restoring force upon heating. The metal ion contained in the ionic polymer resin is not particularly limited, but zinc ions having a low elution property are particularly preferable from the viewpoint of low contamination.

Further, such a thermoplastic cross-linking resin, in addition to the aforementioned ionic polymer resin, imparts a low-density polyethylene having a specific gravity of 0.910 or more to less than 0.930 or an ultra-low-density polyethylene having a specific gravity of less than 0.910 by irradiating an energy beam such as an electron beam. Union is also appropriate. Such a thermoplastic cross-linking resin cross-linking portion and a non-cross-linked portion are coexistent in the resin, and thus have a certain uniform expansion property. Further, since a strong restoring force is generated upon heating, it is also suitable in terms of removing the slack of the tape produced by the expansion step. By appropriately adjusting the amount of energy rays irradiated to low-density ethylene or ultra-low-density ethylene, a resin having a very uniform expansion property can be obtained.

Further, in addition to the aforementioned ionic polymer resin or polyethylene, the thermoplastic cross-linking resin is suitable for crosslinking an ethylene-ethyl acetate copolymer by irradiating an energy beam such as an electron beam. Since the thermoplastic cross-linking resin generates a strong restoring force upon heating, the slack of the tape produced by the expansion step can be removed and is suitable.

In the example shown in FIG. 1, the base film 11 is a single layer. However, the base film 11 is not limited thereto, and may have a multi-layer structure of two or more types of thermoplastic cross-linked resin layers. The thickness of the base film 11 is not particularly limited, but it is easy to stretch in the expanding step of the wafer processing tape 10, and the thickness having a sufficient strength sufficient to be not broken is preferably about 50 to 200 μm, and more preferably 100 μm to 150 μm.

As a method of producing the base film 11 of a plurality of layers, a conventional extrusion method, a lamination method, or the like can be used. When the laminate method is used, an adhesive may be provided between the layers. As the subsequent agent, a conventionally known adhesive can be used.

<Adhesive layer>

The adhesive layer 12 can be formed by applying an adhesive composition on the base film 11. The adhesive layer 12 constituting the wafer processing tape 10 of the present invention does not cause peeling from the adhesive layer 13 at the time of die bonding, and has a degree of retention without causing defects such as wafer scattering, and is easy to pick up at the time of picking up. The property of peeling from the adhesive layer 13 or the like may be sufficient. Specifically, the shear force at 25° C. of the adhesive layer 12 and the adhesive layer 13 is 0.2 N/mm ² or more, and after the 200 mJ/cm ² energy ray irradiation, it is in accordance with the JIS-Z0237 standard state (temperature 23±1° C., The peeling force of the adhesive layer 12 and the adhesive layer 13 at a peeling speed of 300 mm/min and a peeling angle of 180° at a relative humidity of 50±5%) is an adhesive layer 12 of 0.3 N/25 mm or less.

The shear force at the interface between the adhesive layer 12 and the adhesive layer 13 is preferably 0.2 N/mm ² or more and 0.5 N/mm ² or less.

Further, there is no particular lower limit to the peeling force of the adhesive layer 12 and the adhesive layer 13, but if the peeling force is too small, there is a fear that the wafer is peeled off during the pick-up procedure, and wafer scattering occurs during the expansion of the pick-up procedure, or when the program is picked up. The wafers around the predetermined wafer are peeled off together to cause scattering, and therefore 0.03 N/25 mm or more is more preferable.

In the tape for wafer processing of the present invention, the composition of the adhesive composition constituting the adhesive layer 12 is not particularly limited, but in order to improve the pick-up property after cutting, it is preferably an energy ray hardening property, and it is preferable to be hardened and then The material layer 13 is easily peeled off. Specifically, for example, in the adhesive composition, 60 mol% or more of a (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms is contained as a base resin, and contains an energy having an iodine value of 5 to 30. A polymer (A) of a linear hardening carbon-carbon double bond. Here, the energy line is such as an ultraviolet ray or an ionizing radiation such as an electron beam.

Further, in terms of the adhesive composition constituting the adhesive layer 12, the gel fraction is preferably 60% or more. This is because when the gel fraction is low, the degree of crosslinking of the resin is low, and the low molecular weight component is large, so that the low molecular weight component floats on the surface of the adhesive and is detached, causing contamination of the surface of the wafer or contamination of the adhesive layer. This is because when the adhesive layer is contaminated, peeling of the adhesive layer occurs in the step of wafer processing, or the low-molecular weight component volatilizes and forms voids in the hot-pressing adhesion step at the time of molding resin sealing of the semiconductor wafer.

In such a polymer (A), an energy ray hardening carbon-carbon double bond The preferred amount of introduction is from 5 to 30 iodine, and more preferably from 10 to 20. This is because the polymer (A) itself has stability and is easy to manufacture. Further, when the iodine value is less than 5, the effect of lowering the adhesion after the energy ray irradiation may not be sufficiently obtained. When the iodine value is more than 30, the fluidity of the adhesive after the energy ray irradiation may be insufficient, and the gap between the wafers after the wafer processing tape 10 is expanded may not be sufficiently obtained, and image recognition of each wafer at the time of pickup is difficult.

Further, the glass transition temperature of the polymer (A) is preferably -70 ° C to 15 ° C, and more preferably -66 ° C to -28 ° C. When the glass transition temperature is -70 ° C or higher, the heat resistance to heat generated by irradiation with the energy ray is sufficient, and if it is 15 ° C or lower, the effect of preventing wafer scattering after dicing of the wafer having a rough surface state can be sufficiently obtained.

The polymer (A) may be produced anyway, but, for example, an acrylic copolymer may be used in combination with a compound having an energy ray-curable carbon-carbon double bond, or an acrylic copolymer having a functional group may be used. Or a methacrylic copolymer (A1) having a functional group is obtained by reacting a compound (A2) having a functional group obtained by the reaction with the functional group and having an energy ray-curable carbon-carbon double bond.

Among them, the methacrylic copolymer (A1) having a functional group may have a carbon-carbon double bond monomer (A1-1) such as an alkyl acrylate or an alkyl methacrylate, and has a carbon-carbon double bond. The monomer (A1-2) having a functional group is copolymerized as an example. The monomer (A1-1) may, for example, be a hexyl acrylate having an alkyl chain of 6 to 12, an n-octyl acrylate, an isooctyl acrylate, a 2-ethylhexyl acrylate or a dodecylacrylic acid. Ethyl ester of mercapto, mercapto acrylate, lauryl acrylate or alkene chain having a carbon number of 5 or less Acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methacrylate, or the like methacrylate.

Further, when the number of carbon atoms of the alkyl chain in the monomer (A1-1) is larger than 6 components, the peeling force of the adhesive layer and the adhesive layer becomes large, and defects such as wafer cracks occur in the pickup process. Further, when there are many components having a carbon number of 12 or more, they tend to become solid at room temperature, so that workability is lacking, and sufficient adhesion force between the adhesive layer and the adhesive layer cannot be obtained, and an offset occurs at the interface, and Subsequent to the cutting of the agent layer, defects are generated.

Further, as the monomer (A1-1), since the transition temperature of the monomer glass having a larger carbon number of the alkyl chain is lower, an adhesive composition having a desired glass transition temperature can be prepared by appropriate selection. Further, in addition to the glass transition temperature, in order to improve various properties such as compatibility, a low molecular compound having a carbon-carbon double bond such as ethyl acetate, styrene or acrylonitrile may be mixed. In this case, the low molecular compound is mixed in a range of 5% by mass or less based on the total mass of the monomer (A1-1).

On the other hand, examples of the functional group having a monomer (A1-2) include a carboxylic acid group, a hydroxyl group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group. Specific examples of the monomer (A1-2) include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkane acrylate, and 2-hydroxyalkane. Acrylates, ethylene glycol monoacrylates, ethylene glycol monomethacrylates, N-hydroxymethyl decylamine, N-methylol methacrylate, allyl alcohol, N- Alkylamine ethyl acrylates, N-alkylamine ethyl methacrylates, decyl acrylates, decyl methacrylates, maleic anhydride, itaconic anhydride, fumaric anhydride, Benzoic anhydride, C Glycidyl acrylate, glycidyl methacrylate, allyl epoxidized ether, and the like.

In addition, when the functional group used for the compound (A2) is a carboxyl group or a cyclic acid anhydride group, the hydroxyl group, the epoxy group, the isocyanate group, etc. may be mentioned as an example, and when it is a hydroxyl group, a ring may be mentioned. Examples of the acid anhydride group, the isocyanate group, and the like, and when it is an amine group, an epoxy group, an isocyanate group, etc. are mentioned as an example, and when it is an epoxy group, a carboxylic acid group, a cyclic acid anhydride group, and an amine are mentioned. Base is an example. Specific examples of the compound (A2) are the same as those exemplified for the monomer (A1-2). Further, the compound (A2) may be obtained by esterifying a part of an isocyanate group of a polyisocyanate compound by a monomer having a hydroxyl group or a carboxyl group and an energy ray-curable carbon-carbon double bond.

Further, in the reaction between the compound (A1) and the compound (A2), an unreacted functional group is left, and a desired property can be produced in terms of characteristics such as an acid value or a hydroxyl group. When the OH group is left such that the hydroxyl value of the polymer (A) is from 5 to 100, the risk of pick-up failure can be further reduced by reducing the adhesion after the energy ray irradiation. Further, when the COOH group is left so that the acid value of the polymer (A) is from 0.5 to 30, the effect of improving the restorability of the adhesive layer after the tape for processing a wafer of the present invention is expanded can be preferably obtained. Here, when the hydroxyl value of the polymer (A) is too low, the effect of lowering the adhesive force after the energy ray irradiation is insufficient, and when it is too high, the fluidity of the adhesive after the energy ray irradiation tends to be impaired. Further, when the acid value is too low, the effect of improving the tape restorability is insufficient, and when it is too high, the fluidity of the adhesive tends to be impaired.

In the synthesis of the above polymer (A), the organic solvent used in the reaction by solution polymerization may be a ketone system, an ester system, an alcohol system or an aromatic group, but particularly preferred are toluene, ethyl acetate, and isopropyl. Alcohol, benzyl celecoxib, A solvent having a boiling point of 60 to 120 ° C such as ethyl celecoxib, acetone or methyl ethyl ketone is generally a good solvent for an acrylic polymer. As the polymerization initiator, a radical generator such as an azobis system such as α,α'-azobisisobutyronitrile or an organic peroxide such as benzoic acid peroxide is used. In this case, a catalyst, a polymerization inhibitor, or the like may be used in combination, and the polymer (A) having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time. Further, as the molecular weight to be adjusted, a solvent of a mercaptan or a carbon tetrachloride type is preferably used. Further, the reaction is not limited to solution polymerization, and may be other methods such as bulk polymerization or suspension polymerization.

The polymer (A) can be obtained as described above, but in the present invention, the amount of the polymer (A) is preferably from about 500,000 to about 1,000,000. When it is less than 500,000, the cohesive force becomes small, and the interface with the adhesive layer is likely to be displaced when it is expanded, and sufficient stretching force cannot be transmitted to the adhesive layer, and the cutting of the adhesive layer is insufficient. . In order to prevent this shift as much as possible, the molecular weight is preferably 500,000 or more. Moreover, when the molecular weight exceeds 1,000,000, there is a possibility of gelation during the synthesis and at the time of coating. Further, the molecular weight of the present invention is a mass average molecular weight in terms of polyethylene.

Further, in the wafer processing tape 10 of the present invention, the resin composition constituting the adhesive layer 12 may further have a compound (B) acting as a crosslinking agent in addition to the polymer (A). Specifically, it contains at least one compound selected from the group consisting of polyisocyanates, melamines, formaldehyde resins, and epoxy resins. These compounds may be used alone or in combination of two or more. The compound (B) is reacted with the polymer (A) or the substrate film, and by the crosslinked structure which produces the result, the polymer (A) and (B) are mainly composed after the application of the adhesive composition. The cohesive force of the adhesive.

The polyisocyanate is not particularly limited, and examples thereof include 4,4'-diphenylmethane diisocyanate, toluene diisocyanate, xylene diisocyanate, 4,4'-diphenyl ether diisocyanate, and 4,4'-[2, Aromatic isocyanate such as 2-bis(4-phenoxyphenyl)propane diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexanemethane diisocyanate, diisocyanate, triisocyanate, etc., specifically, CORONATE L (manufactured by NIHON POLYURETHANE, trade name), etc., can be used. . Specifically, as the melamine or the formaldehyde resin, NIKALAC MX-45 (trade name, manufactured by Sanwa Chemical Co., Ltd.), Melan (manufactured by Hitachi Chemical Co., Ltd., trade name), or the like can be used. As the epoxy resin, TETRAD-X (manufactured by Mitsubishi Chemical Corporation, trade name) or the like can be used. In the present invention, it is particularly preferred to use polyisocyanates.

The amount of the compound (B) to be added is 0.1 to 10 parts by mass, more preferably 0.5 to 5 parts by mass, per 100 parts by mass of the polymer (A). By selecting within this range, an appropriate cohesive force can be generated, and the crosslinking reaction does not proceed sharply. Therefore, workability such as mixing or coating of the adhesive is good.

Further, in the present invention, the adhesive layer 12 preferably contains a photopolymerization initiator (C). The photopolymerization initiator (C) contained in the adhesive layer 12 is not particularly limited, and a conventional one can be used. For example, diphenyl ketone, 4,4'-dimethylamine diphenyl ketone, 4,4'-diethylamine diphenyl ketone, 4,4'-dichlorodiphenyl ketone, etc. Classes, acetophenones such as acetophenone and diethoxyacetophenone, anthraquinones such as 2-ethylhydrazine and tert-butyl hydrazine, 2-chlorosultone, benzamidine ether, Benzopyridinium isopropyl ether, benzyl, 2,4,5-triarylimidazole dimer (octyl dimer), acridine compound, and the like. These compounds may be used alone or in combination of two or more. phase The photopolymerization initiator (C) is preferably added in an amount of from 0.1 to 10 parts by mass, more preferably from 0.5 to 5 parts by mass, per 100 parts by mass of the polymer (A).

Further, the energy ray-curable adhesive used in the present invention may be optionally mixed with an adhesion-imparting agent, an adhesion regulator, a surfactant, or the like, or other modifier. Further, an inorganic compound filler may be added as appropriate.

The thickness of the adhesive layer 12 is not particularly limited, but is at least 5 μm, more preferably 10 μm or more. Further, the adhesive layer 12 may be composed of a plurality of laminated layers.

<Binder layer>

The tape for wafer processing of the present invention is adhered to the wafer by the adhesive layer 13 after the dicing, and after being diced, the adhesive layer 12 is peeled off and adhered to the wafer. Further, it is used as an adhesive when the wafer is fixed on a substrate or a ring frame. The adhesive layer 13 is not particularly limited as long as it is a film-like adhesive used for a general wafer, and an epoxy resin/phenol resin/acrylic resin mixture is preferably an adhesive. Although the thickness can be appropriately set, it is preferably about 5 to 100 μm.

In the adhesive tape 10 for wafer processing of the present invention, the adhesive layer 13 may be formed directly or indirectly on the base film 11 by a pre-film former (hereinafter referred to as a film). The temperature at the time of lamination is preferably in the range of 10 to 100 ° C, and a linear pressure of 0.01 to 10 N/m is applied. Further, the film may be formed by forming the adhesive layer 13 on the separator. In this case, the separator may be peeled off after the layer is laminated, or may be used as the cover film of the wafer processing tape 10 as it is. And peel off when pasting the wafer.

The foregoing film can be laminated on the entire layer of the adhesive layer 12, but It is also possible to laminate the adhesive film on the adhesive layer 12 by cutting (pre-cut) the shape of the pre-adhered wafer. Thus, when the laminate is formed according to the subsequent film of the wafer, as shown in FIG. 3, the portion to which the wafer W is pasted has the adhesive layer 13, and the portion of the adhesive ring frame 20 has no adhesive layer 13, and only the adhesive layer exists. 12. In general, the adhesive layer 13 is not easily peeled off from the adherend, so a pre-cut adhesive film is used, whereby the ring frame 20 can be bonded to the adhesive layer 12, and it is difficult to obtain the ring frame 20 when the tape is peeled off after use. The result is a residual paste.

<Use>

The wafer processing tape 10 of the present invention is used in a method of manufacturing a semiconductor device including an expansion step by at least expanding the cut-off adhesive layer 13. Therefore, the order of other steps and steps is not particularly limited. For example, it can be suitably used in the manufacturing methods (A) to (D) of the following semiconductor devices.

Semiconductor device manufacturing method (A)

(a) a step of adhering the surface protective tape to the surface of the wafer on which the circuit pattern is formed; (b) a step of grinding the back surface of the wafer; (c) heating the wafer to 70 to 80 ° C And the step of adhering the adhesive layer of the wafer processing tape to the back surface of the wafer; (d) the step of peeling off the surface protective tape from the surface of the wafer; (e) the predetermined divided portion of the wafer Irradiating the laser light and forming a modified region generated by multiphoton absorption inside the wafer; (f) cutting the wafer and cutting the wafer along the cutting line by expanding the wafer processing tape The aforementioned adhesive layer of the tape, and an expansion step of obtaining a plurality of wafers with the aforementioned adhesive layer; (g) a step of heating and shrinking the portion of the wafer processing tape that has not been overlapped with the wafer, thereby removing the slack generated in the expanding step and maintaining the interval between the wafers; and (h) The step of picking up the aforementioned wafer with the aforementioned adhesive layer by the adhesive layer of the aforementioned wafer processing tape.

Semiconductor device manufacturing method (B)

(a) a step of adhering the surface protective tape to the surface of the wafer on which the circuit pattern is formed; (b) a step of grinding the back surface of the wafer; (c) heating the wafer to 70 to 80 ° C Next, the step of adhering the adhesive layer of the wafer processing tape to the back surface of the wafer; (d) the step of peeling off the surface protective tape from the surface of the wafer; (e) cutting the surface of the wafer surface a step of irradiating the laser light to cut the wafer into a wafer; (f) cutting the adhesive layer on each of the wafers by expanding the wafer processing tape, and obtaining a plurality of wafers with the adhesive layer a step of expanding; (g) heating the unmasked portion of the wafer processing tape after the expansion, thereby removing the slack generated in the expanding step and maintaining the interval between the wafers And (h) the step of picking up the aforementioned wafer with the aforementioned adhesive layer from the adhesive layer of the aforementioned wafer processing tape.

Semiconductor device manufacturing method (C)

(a) Adhering the surface protection tape to the surface of the wafer on which the circuit pattern is formed a step of polishing (b) polishing the back surface of the wafer back surface; (c) adhering the adhesive layer of the wafer processing tape to the crystal in a state where the wafer is heated to 70 to 80 ° C a step of rounding the back surface; (d) a step of peeling off the surface protective tape from the surface of the wafer; (e) a step of cutting the wafer along the cutting line using a dicing blade, and cutting into a wafer; (f) by expanding the foregoing a wafer processing tape which is formed by cutting the adhesive layer on each of the wafers and obtaining a plurality of wafers with the adhesive layer; (g) heat shrinking in the expanded wafer processing tape a portion that is not overlapped with the wafer, thereby removing the slack generated in the expanding step and maintaining the interval between the wafers; and (h) picking up the adhesive layer of the wafer processing tape with the aforementioned The step of the aforementioned wafer of the agent layer.

Semiconductor device manufacturing method (D)

(a) a step of cutting a wafer having a circuit pattern along a predetermined cutting line to a depth smaller than a thickness of the wafer using a dicing blade; (b) a step of adhering a surface protective tape to the surface of the wafer; a back grinding step of grinding the back surface of the wafer and cutting into a wafer; (d) adhering the adhesive layer of the processing tape to the wafer after heating the wafer to 70 to 80 ° C a step of the back surface of the wafer; (e) peeling the surface protective rubber from the wafer surface cut into the wafer a step of tape (f) by expanding the aforementioned wafer processing tape, cutting the adhesive layer on each of the wafers, and obtaining an extension step of a plurality of wafers with the adhesive layer; (g) after expansion In the above-mentioned wafer processing tape, the portion where the heat shrinkage is not overlapped with the wafer, thereby removing the slack generated in the expanding step and maintaining the interval between the wafers; and (h) the wafer processing The adhesive layer of the tape picks up the aforementioned wafer with the aforementioned adhesive layer.

<How to use>

A method of using the tape using the wafer processing tape 10 of the present invention in the above-described semiconductor device manufacturing method (A) will be described with reference to Figs. 2 to 5 . First, as shown in FIG. 2, a surface protective tape 14 for protecting a circuit pattern containing an ultraviolet curing component is adhered to the surface of the wafer W on which the circuit pattern is formed, and the back surface of the wafer W is polished. Back grinding step.

After the back surface polishing step is completed, as shown in FIG. 3, on the heating stage 25 of the wafer mount, the wafer W is placed on the surface side downward, and then the wafer processing tape 10 is pasted on the back surface of the wafer W. The wafer processing tape 10 used herein is formed by laminating a pre-cut (pre-cut) film according to the shape of the adhered wafer W, and the adhesive layer 12 is exposed to the adhesive in the surface adhered to the wafer W. Around the area where the layer 13 is exposed. The exposed portion of the adhesive layer 10 of the wafer processing tape 10 is bonded to the back surface of the wafer W, and the exposed portion of the adhesive layer 12 around the adhesive layer 13 is bonded to the ring frame 20. at this time, The heating stage 25 is set at 70 to 80 ° C, whereby heat bonding is performed.

Next, the wafer W to which the wafer processing tape 10 is pasted is carried out from the heating stage 25, as shown in FIG. 4, and the wafer processing tape 10 side is placed on the adsorption tape 26 downward. Further, an ultraviolet light source 27 is adsorbed and fixed on the wafer W on the adsorption tape 26, and ultraviolet rays of, for example, 1000 mJ/cm ^{2 are} applied to the substrate surface side of the surface protective tape 14, so that the surface protective tape 14 is applied to the wafer W. Then the force is lowered and the surface protection tape 14 is peeled off from the surface of the wafer W.

Next, as shown in FIG. 5, laser light is irradiated onto a predetermined divided portion of the wafer W, and a modified region 32 generated by multiphoton absorption is formed inside the wafer W.

Next, as shown in FIG. 6(a), the wafer W and the wafer processing tape 10 pasted on the ring frame 20 are placed on the stage 21 of the expansion device with the base film 11 side down.

Next, as shown in FIG. 6(b), in the state in which the ring frame 20 is fixed, the hollow cylindrical projecting member 22 of the expansion device is raised, and the wafer processing tape 10 is expanded (expanded). The expansion condition is, for example, 5 to 500 mm/sec, and the amount of expansion (the amount of protrusion) is, for example, 5 to 25 mm. By thus stretching the wafer processing tape 10 in the radial direction of the wafer W, the wafer W is cut into wafer 34 units starting from the modified region 32. At this time, the elongation (deformation) due to the expansion is not suppressed in the portion of the adhesive layer 13 subsequent to the back surface of the wafer W, and no breakage occurs, but at the position between the wafers 34, the tension due to the expansion concentrates and breaks. Therefore, as shown in FIG. 6(c), the wafer W and the adhesive layer 13 are cut together. Thereby, a plurality of wafers with the adhesive layer 13 can be obtained. 34. Therefore, the elongation at break of the adhesive layer 13 is preferably smaller than the elongation at break of the base film 11 and the adhesive layer 12.

Next, as shown in FIG. 7, the protrusion member 22 is returned to the original position, and the slack of the wafer processing tape 10 generated in the previous expansion step is removed to stably maintain the interval between the wafers 34. In this step, for example, hot air of 90 to 120 ° C is blown into the annular heat shrinkage region 28 between the wafer 34 existing region and the ring frame 20 using the hot air nozzle 29 and the substrate is made. The film 11 is heated and shrunk, and the wafer processing tape 10 is stretched. Then, after the energy ray hardening treatment or the heat hardening treatment is performed on the adhesive layer 12, and the adhesion of the adhesive layer 12 to the adhesive layer 13 is weakened, the wafer 34 is picked up.

Example

Next, the examples and comparative examples will be described in detail in order to clarify the effects of the present invention, but the present invention is not limited to the examples.

[Production of Wafer Processing Tape]

(1) Fabrication of substrate film

A zinc ion polymer (density 0.96 g/cm ³ , zinc ion content) of a ethylene-methacrylic acid-ethyl methacrylate (mass ratio 8:1:1) terpolymer synthesized by a free radical method at 140 ° C 4 mass%, a chlorine content of less than 1 mass%, a Fika softening temperature of 56 ° C, a melting point of 86 ° C), and a base film formed by using an extruder to form a long film of 100 μm.

(2) Modulation of acrylic copolymer

(a-1)

Modulation consisting of 2-ethylhexyl acrylate, 2-hydroxy acrylate and acrylic acid A copolymer having a ratio of 2-ethylhexyl acrylate of 60 mol% and a mass average molecular weight of 800,000 was used as the acrylic copolymer (A1) having a functional group. Next, 2-isocyanatoethyl methacrylate was added to have an iodine value of 20, and an acrylic copolymer having a glass transition temperature of -60 ° C, a hydroxyl group of 60 mg/KOH/g, and an acid value of 5 mg/KOH/g was prepared ( A-1).

(a-2)

A copolymer composed of 2-ethylhexyl acrylate, 2-hydroxy acrylate, and acrylic acid, and having a ratio of 2-ethylhexyl acrylate of 80 mol% and a mass average molecular weight of 700,000, as an acrylic copolymer having a functional group (A1). Next, 2-isocyanatoethyl methacrylate was added to have an iodine value of 15, and an acrylic copolymer having a glass transition temperature of -70 ° C, a hydroxyl group of 20 mg/KOH/g, and an acid value of 5 mg/KOH/g was prepared ( A-2).

(a-3)

A copolymer composed of dodecyl acrylate, 2-hydroxy acrylate and acrylic acid and having a ratio of dodecyl acrylate of 60 mol% and a mass average molecular weight of 800,000 as an acrylic copolymer having a functional group (A1). Next, 2-isocyanatoethyl methacrylate was added to have an iodine value of 20, and an acrylic copolymer having a glass transition temperature of -5 ° C, a hydroxyl group of 60 mg/KOH/g, and an acid value of 5 mg/KOH/g was prepared ( A-3).

(a-4)

A copolymer composed of lauryl acrylate, 2-hydroxy acrylate and acrylic acid and having a ratio of lauryl acrylate of 60 mol% and a mass average molecular weight of 800,000 as an acrylic copolymer having a functional group (A1) . Next, add 2-isocyanatoethyl methacrylate to make the iodine value 20, The acrylic copolymer (a-4) having a transition temperature of 5 ° C, a hydroxyl group of 60 mg/KOH/g, and an acid value of 5 mg/KOH/g was prepared.

(a-5)

A copolymer composed of lauryl acrylate, 2-hydroxy acrylate, and acrylic acid, and having a ratio of lauryl acrylate of 80 mol% and a mass average molecular weight of 750,000, as an acrylic copolymer having a functional group (A1) . Next, 2-isocyanatoethyl methacrylate was added to have an iodine value of 15, and an acrylic copolymer having a glass transition temperature of 10 ° C, a hydroxyl group of 20 mg/KOH/g, and an acid value of 5 mg/KOH/g was prepared (a) -5).

(a-6)

The preparation is composed of 2-ethylhexyl acrylate, lauryl acrylate, 2-hydroxy acrylate and acrylic acid, and the ratio of 2-ethylhexyl acrylate and lauryl acrylate is 60 mol%, and the copolymer of mass average molecular weight is 800,000. The material is an acrylic copolymer (A1) having a functional group. Next, 2-isocyanatoethyl methacrylate was added to have an iodine value of 20, and an acrylic copolymer having a glass transition temperature of -30 ° C, a hydroxyl value of 50 mg/KOH/g, and an acid value of 5 mg/KOH/g was prepared ( A-6).

(a-7)

The preparation is composed of 2-ethylhexyl acrylate, lauryl acrylate, 2-hydroxy acrylate and acrylic acid, and the ratio of 2-ethylhexyl acrylate and lauryl acrylate is 80 mol%, and the copolymer of mass average molecular weight is 700,000. The material is an acrylic copolymer (A1) having a functional group. Next, 2-isocyanatoethyl methacrylate was added to have an iodine value of 20, and a glass transition temperature of -10 ° C, a hydroxyl value of 20 mg / KOH / g, and an acid value of 5 mg / KOH / g of acrylic copolymer were prepared. (a-7).

(a-8)

A copolymer composed of 2-ethylhexyl acrylate, 2-hydroxy acrylate, and acrylic acid, and having a ratio of 2-ethylhexyl acrylate of 55 mol% and a mass average molecular weight of 800,000, as an acrylic copolymer having a functional group (A1). Next, 2-isocyanatoethyl methacrylate was added to have an iodine value of 20, and an acrylic copolymer having a glass transition temperature of -55 ° C, a hydroxyl group of 80 mg/KOH/g, and an acid value of 5 mg/KOH/g was prepared ( A-8).

(a-9)

A copolymer comprising butyl acrylate, 2-hydroxy acrylate and acrylic acid and having a ratio of butyl acrylate of 60 mol% and a mass average molecular weight of 800,000 as an acrylic copolymer having a functional group (A1) . Next, 2-isocyanatoethyl methacrylate was added to have an iodine value of 20, and an acrylic copolymer having a glass transition temperature of -40 ° C, a hydroxyl group of 60 mg/KOH/g, and an acid value of 5 mg/KOH/g was prepared ( A-9).

(3) Modulation of the composition of the adhesive

(d-1)

In the epoxy resin "YDCN-703" (manufactured by Tohto Kasei Co., Ltd., trade name, formaldehyde novolak type epoxy resin, epoxy equivalent 210), 36 parts by mass, phenolic resin "MILEX XLC- as a curing agent for epoxy resin""A-1160" (manufactured by Nippon Unicar Co., Ltd., product name), 2.1 parts by mass and "A-189" (manufactured by Mitsui Chemical Co., Ltd., trade name, phenolic resin), and "A-189" (manufactured by Nippon Unicar Co., Ltd.) "Product name": 1.1 parts by mass and erbium dioxide filler (particles) "AEREOSIL R972" (manufactured by Nippon Aerosil Co., Ltd., trade name, average particle diameter: 0.016 μm, specific surface area: 120 m ^{2 /} g) 21.2 parts by mass The cyclohexanone was added, stirred and mixed, and further mixed for 90 minutes using a ball mill.

"HTR-860P-3" (product name, manufactured by Nagase ChemteX Co., Ltd.) containing 3% by mass of a monomer unit derived from glycidyl acrylate or glycidyl methacrylate (high molecular weight component) is added thereto. 200 parts by mass of a mass average molecular weight of 800,000 parts, and 0.075 parts by mass of "CUREZOL2PZ-CN" (Shikoku Chemical Industrial Co., Ltd., trade name, 1-cyanoethyl-2-benzimidazole) as a hardening accelerator, stirred and mixed, and The adhesive composition (d-1) was obtained.

(d-2)

In the epoxy resin "YDCN-703" (manufactured by Tohto Kasei Co., Ltd., trade name, formaldehyde novolak type epoxy resin, epoxy equivalent 210), 50 parts by mass, phenolic resin "MILEX XLC- as a curing agent for epoxy resin""A-1160" (manufactured by Nippon Unicar Co., Ltd., product name), 4.3 parts by mass and "A-189" (manufactured by Mitsui Chemical Co., Ltd., trade name, phenol resin), and "A-189" (manufactured by Nippon Unicar Co., Ltd.) (product name) 1.1 parts by mass and erbium dioxide filler (particles) of "AEREOSIL R972" (manufactured by Nippon Aerosil Co., Ltd., trade name, average particle diameter: 0.016 μm, specific surface area: 120 m ² /g) 50 parts by mass The cyclohexanone was added, stirred and mixed, and further mixed for 90 minutes using a ball mill.

"HTR-860P-3" (product name, manufactured by Nagase ChemteX Co., Ltd.) containing 3% by mass of a monomer unit derived from glycidyl acrylate or glycidyl methacrylate (high molecular weight component) is added thereto. 200 parts by mass of a mass average molecular weight of 800,000 parts, and 0.01 parts by mass of "CUREZOL2PZ-CN" (Shikoku Chemical Industrial Co., Ltd., trade name, 1-cyanoethyl-2-benzimidazole) as a hardening accelerator, stirred and mixed, and A varnish of the adhesive composition was obtained.

<Example 1>

100 parts by mass of the acrylic copolymer (a-1) was dissolved in ethyl acetate, and 5 parts by mass of CORONATE L (manufactured by NIHON POLYURETHANE) was added as a polyisocyanate, and 3 parts by mass of IRGACURE-184 (Nihon Ciba-Geigy) was added. The company made a mixture of photopolymerization initiators, and stirred and modulated the adhesive composition.

Next, on the release liner composed of the release-treated polyethylene terephthalate film, the adhesive composition was applied so that the thickness after drying became 10 μm, and after drying at 110 ° C for 3 minutes, the substrate was bonded to the substrate. The film is bonded to form an adhesive sheet which forms an adhesive layer on the substrate film.

Next, the adhesive composition (d-1) was applied onto a release liner composed of a release-treated polyethylene terephthalate film so that the thickness after drying became 20 μm, and dried at 110 ° C for 5 minutes. An adhesive film was formed on the release liner to form an adhesive layer.

The adhesive sheet is cut into a shape as shown in Fig. 3 or the like which can be attached to the opening portion in a covering manner with respect to the ring frame. Further, the film is cut into a shape as shown in Fig. 3 or the like which can cover the back surface of the wafer. Further, the side of the adhesive layer on the adhesive sheet and the adhesive layer side of the adhesive film were bonded, and the exposed portion of the adhesive layer 12 was formed around the film as shown in Fig. 3 to form a wafer processing tape.

<Example 2>

An adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-2) was used. Using the adhesive composition, a tape for wafer processing was produced in the same manner as in Example 1.

<Example 3>

An adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-3) was used. Using the adhesive composition, a tape for wafer processing was produced in the same manner as in Example 1.

<Example 4>

An adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-4) was used. Using the adhesive composition, a tape for wafer processing was produced in the same manner as in Example 1.

<Example 5>

An adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-5) was used. Using the adhesive composition, a tape for wafer processing was produced in the same manner as in Example 1.

<Example 6>

An adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-6) was used. Using the adhesive composition, a tape for wafer processing was produced in the same manner as in Example 1.

<Example 7>

An adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-7) was used. Using the adhesive composition, a tape for wafer processing was produced in the same manner as in Example 1.

<Example 8>

A wafer processing tape was produced in the same manner as in Example 1 except that the adhesive composition (d-2) was used.

<Example 9>

A wafer processing tape was produced in the same manner as in Example 4 except that the adhesive composition (d-2) was used.

<Comparative Example 1>

The adhesive composition was prepared in the same manner as in Example 1 except that the amount of the polyisocyanate blended was 1 part by mass. Using the adhesive composition, a tape for wafer processing was produced in the same manner as in Example 1.

<Comparative Example 2>

The adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-8) was used and the amount of the polyisocyanate blended was 2 parts by mass. Using the adhesive composition, a tape for wafer processing was produced in the same manner as in Example 1.

<Comparative Example 3>

An adhesive composition was prepared in the same manner as in Example 1 except that the acrylic copolymer (a-9) was used. Using the adhesive composition, a tape for wafer processing was produced in the same manner as in Example 1.

[Physical properties and evaluation of tape for wafer processing]

(1) Measurement of gel fraction

The adhesive layer was weighed to about 0.05 g, and after immersing in 120 mL of xylene for 50 hours in 50 ml of xylene, it was filtered through a 200 mesh stainless steel metal mesh, and the insoluble portion of the metal mesh was dried at 110 ° C for 120 minutes. Then weigh and dry The mass of the part was not dissolved, and the gel fraction was calculated by the formula shown below.

Gel fraction (%) = (quality of insoluble portion / mass of adhesive layer taken) × 100

The measurement results obtained are shown in Table 1.

(2) Measurement of shear force

As shown in Fig. 8, the adhesion area of the adhesive layer and the adhesive layer of each wafer processing tape before ultraviolet irradiation was 10 mm × 10 mm, and Orien spatt tape No. 830S by Sekisui Chemical Co., Ltd. was attached to the wafer, respectively. The surface of the substrate of the processing tape and the surface opposite to the adhesive surface of the adhesive are used as the auxiliary tape 15. Then, as shown in FIG. 9, the unadhered portion was fixed by the peeling measurement fixing member 30, and the shearing force was measured at a peeling speed of 0° and a peeling speed of 500 mm/min. Moreover, the tensile stress of the auxiliary tape unit used here is very large as compared with the measured value, and thus can be ignored.

(3) Measurement of peel force

Ultraviolet rays were irradiated on each sample, and the adhesion before and after ultraviolet irradiation was measured in accordance with JIS-Z0237. As shown in FIG. 10, the auxiliary tape 15 is adhered to the adhesive layer 13 of the wafer processing tape, and the adhesive layer 13 side is attached to the support plate 36 through the fixing double-sided tape 38, and one peeling measurement is performed. The support member 36 is held by the fixing member 30, and the adhesive layer 12 and the base film 11 are held by the other peeling measurement fixing member 30, and the peeling force between the adhesive layer 12 and the adhesive layer 13 is measured. The peeling speed at a standard state (temperature 23 ° C, relative humidity 50%) was 300 mm/min, and the peeling angle was 180°. The ultraviolet lamp was a high pressure mercury lamp (365 nm, 30 mW/cm ² , irradiation distance: 10 cm), and the irradiation intensity was 200 mJ/cm ² . The measurement results are shown in Table 1.

(4) Measurement of cutting rate

According to the method shown below, the suitability test corresponding to the following processing steps of the manufacturing method (A) of the semiconductor device described above was carried out for each of the wafer processing tapes of the above-described examples and the comparative examples.

(a) Adhering the surface protective tape to the surface of the wafer on which the circuit pattern is formed.

(b) performing a back grinding step of polishing the back surface of the wafer.

(c) adhering the adhesive layer of the wafer processing tape to the back surface of the wafer while heating the wafer to 70 ° C, and bonding the wafer processing ring frame and the wafer processing tape The portion of the agent layer and the adhesive layer that are not overlapped.

(d) peeling off the surface protection tape from the aforementioned wafer surface.

(e) irradiating the laser beam at a predetermined divided portion of the wafer, and forming a modified region generated by multiphoton absorption inside the wafer.

(f) The above-mentioned adhesive layer of the wafer and the above-mentioned wafer processing tape is cut by expanding the above-mentioned wafer processing tape by 10% to obtain a plurality of wafers with the above-mentioned adhesive layer.

(g) heating to 120 ° C to shrink the portion (the annular region between the wafer existing region and the ring frame) that is not overlapped with the aforementioned wafer for the wafer processing tape, thereby removing the expansion in (f) The slack generated in the step and the spacing of the wafers is maintained.

(h) The aforementioned wafer with the adhesive layer is picked up by the adhesive layer of the aforementioned wafer processing tape.

In the step (f), the DDS-2300 manufactured by DISCO Corporation was used, and the circular ring frame was pressed against the cutting ring frame of the wafer processing tape by the expansion of DDS-2300 manufactured by DISCO Corporation, and the circular protruding member was pressed against the crystal. The expansion is performed by the portion of the outer periphery of the wafer bonding portion of the round processing tape that is not overlapped with the wafer. Further, the conditions of the steps (f) and (g) are an expansion speed of 300 mm/sec and an expansion amount (amount of protrusion) of 20 mm. The amount of expansion is the amount of change in the relative position of the ring frame and the protruding member before and after the pressing.

With respect to the wafer processing tapes of Examples 1 to 9 and Comparative Examples 1 to 3, the cutting rate of the adhesive layer in the above step (f) was observed, and the (g) step was followed to observe whether or not 100 wafers were cut, thereby evaluating . The results are shown in Table 1.

(5) Evaluation of pick-up

Before the step (h) of the step (g), the metal halide high-pressure mercury lamp is used under a nitrogen atmosphere at 365 nm with respect to the surface opposite to the surface of the adhesive layer of the base film of the wafer processing tape. Ultraviolet rays were irradiated under the conditions of 30 mW/mm ² and 200 mJ/cm ² . Moreover, the pick-up test of the DIESPICKER device (manufactured by Canon Machinery Co., Ltd., trade name CAP-300II) was carried out on 100 wafers cut in the step (h), and the adhesive layer which was peeled off by the adhesive layer was picked up successfully, and was calculated. Pick up success rate. The results are shown in Table 1. The meanings of ○, △, and × in the table are as follows.

"○"... The pick-up success rate of the projection pin height of 0.5 mm and 0.3 mm is 100%.

"△"... The pick-up success rate is 0.5% when the protrusion height is 0.5 mm, but the pick-up success rate is less than 100% when the protrusion height is 0.3 mm.

"×"...The pick-up success rate is less than 0.5mm and 0.3mm. 100%.

The results are shown in Table 1.

As shown in Table 1, the shearing force of the adhesive layer 12 and the adhesive layer 13 was 0.2 N/mm ² or more, and the peeling force after the irradiation of the energy beam of 200 mJ/cm ² was 0.3 N/25 mm or less. Examples 1 to 9 The wafer processing tape-based adhesive layer has a cutting rate of 100%, and it is known from the evaluation of the pick-up success rate that it has good pick-up property. On the other hand, in the comparative example 2 in which the shear force of the adhesive layer 12 and the adhesive layer 13 is 0.2 N/mm ² or less, the interface between the adhesive layer 12 and the adhesive layer 13 is shifted, and there is Sufficient tensile force cannot be transmitted to the adhesive layer, and the adhesive layer 13 cannot be sufficiently cut. On the other hand, in Comparative Example 1 and Comparative Example 3, even when the shear force is 0.2 N/mm ² or more and the cutting property is excellent, when the peeling force after the energy ray irradiation is 0.3 N/25 mm or more The picking success rate is getting worse.

Further, in the method of manufacturing the semiconductor device B to D, in the expansion step, the same steps as the expansion step, the heat shrinkage step, and the pickup step of the method A of manufacturing the semiconductor device are performed except that the wafer is cut into individual wafers. Therefore, the results of using the wafer processing tape 10 of Examples 1 to 9 and Comparative Examples 1 to 3 can be understood to be the same as those shown in Table 1, and from the viewpoint of the cutting property and the pick-up property, It is useful to use the wafer processing tape 10 of the present invention in the manufacturing methods B to D of the semiconductor device.

10‧‧‧ Wafer processing tape

11‧‧‧Substrate film

12‧‧‧Adhesive layer

13‧‧‧ adhesive layer

Claims (10)

A tape for processing a wafer, comprising: a base film, an adhesive layer formed on the base film, and an adhesive layer formed on the adhesive layer, and the adhesive layer and the adhesive The layer has a shear force of 0.2 N/mm ² or more at 25° C., and the adhesive layer of the peeling speed of 300 mm/min and a peeling angle of 180° according to the JIS-Z0237 standard state after irradiation with an energy beam of 200 mJ/cm ² and The peeling force of the above adhesive layer is 0.3 N/25 mm or less. The tape for wafer processing according to the first aspect of the invention, wherein the adhesive layer and the adhesive layer have a shear force at 25 ° C of 0.2 N/mm ² or more and 0.5 N/mm ² or less. The tape for wafer processing according to claim 1 or 2, wherein the adhesive layer is composed of an adhesive composition having a gel fraction of 60% or more. The tape for wafer processing according to claim 3, wherein the adhesive composition contains 60 mol% or more of a (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms as a base resin, and contains A polymer of an energy-hardening carbon-carbon double bond having an iodine value of 5 to 30. The tape for wafer processing according to claim 3, wherein the adhesive composition contains at least one compound selected from the group consisting of polyisocyanates, melamines, formaldehyde resins, and epoxy resins. The tape for wafer processing according to claim 1 or 2, wherein the elongation at break of the adhesive layer is higher than the adhesion of the substrate film to the foregoing The elongation at break of the agent layer is small. A method of manufacturing a semiconductor device using the tape for wafer processing according to any one of claims 1 to 6, characterized in that it comprises: (a) bonding a surface protective tape to the formed a step of patterning the surface of the wafer; (b) grinding the backside grinding step of the wafer back surface; (c) applying the above-mentioned wafer processing tape in a state where the wafer has been heated to 70 to 80 °C a step of bonding the layer to the back surface of the wafer; (d) removing the surface protective tape from the surface of the wafer; (e) irradiating the laser at a predetermined divided portion of the wafer, and in the wafer a step of forming a modified region by multiphoton absorption; (f) cutting the aforementioned adhesive layer of the wafer and the wafer processing tape along a predetermined divided portion by expanding the wafer processing tape; And obtaining an expansion step of a plurality of wafers with the adhesive layer; (g) heating and shrinking a portion of the wafer processing tape after the expansion, which is not overlapped with the wafer, thereby removing the expansion step Produced Relaxation, step interval to maintain the wafer; and (h) from the wafer processing tape attached to the adhesive layer pickup step of picking up the next layer of the wafer. A method of manufacturing a semiconductor device using the tape for wafer processing according to any one of claims 1 to 6, which is characterized by comprising: (a) a step of attaching the surface protective tape to the surface of the wafer on which the circuit pattern has been formed; (b) a step of grinding the back surface of the wafer; (c) heating the wafer to 70 to 80 ° C a step of bonding the adhesive layer of the wafer processing tape to the back surface of the wafer; (d) removing the surface protective tape from the surface of the wafer; (e) following the surface of the wafer a step of irradiating the laser beam with the cutting line to cut the wafer into a wafer; (f) by expanding the wafer processing tape, and cutting the adhesive layer on each of the wafers to obtain the adhesive a step of expanding a plurality of layers of the layer; (g) heating and shrinking a portion of the tape for processing the wafer after the expansion, which is not overlapped with the wafer, thereby removing slack generated in the expanding step to maintain the foregoing a step of spacing the wafers; and (h) picking up the wafers with the aforementioned adhesive layer from the adhesive layer of the wafer processing tape. A method of manufacturing a semiconductor device using the tape for wafer processing according to any one of claims 1 to 6, characterized in that it comprises: (a) bonding a surface protective tape to the formed a step of patterning the surface of the wafer; (b) grinding the backside grinding step of the wafer back surface; (c) heating the wafer to 70 to 80 ° C, before The step of bonding the adhesive layer of the wafer processing tape to the back surface of the wafer; (d) the step of peeling off the surface protective tape from the surface of the wafer; (e) cutting the wafer along the cutting line using a dicing blade And cutting the wafer into a wafer; (f) expanding the aforesaid adhesive layer by cutting the adhesive layer to form a plurality of wafers with the adhesive layer; g) a step of heat-shrinking a portion not overlapped with the wafer in the aforementioned wafer processing tape after expansion, thereby removing slack generated in the expanding step to maintain the interval of the wafer; and (h) Picking up a step of picking up the aforementioned wafer with the aforementioned adhesive layer from the adhesive layer of the aforementioned wafer processing tape. A method of manufacturing a semiconductor device using the tape for wafer processing according to any one of claims 1 to 6, characterized by comprising: (a) cutting along a predetermined cutting line using a cutting blade a step of forming a circuit pattern wafer to a depth less than the thickness of the wafer; (b) a step of bonding the surface protection tape to the surface of the wafer; (c) grinding the back surface of the wafer and cutting into a wafer a back grinding step; (d) a step of bonding the adhesive layer of the processing tape to the back surface of the wafer that has been cut into the wafer, in a state where the wafer has been heated to 70 to 80 ° C; (e) a step of peeling off the surface protective tape from the wafer surface of the wafer; (f) by expanding the wafer processing tape, the adhesive layer is cut by each of the wafers, and is attached a step of expanding a plurality of wafers of the adhesive layer; (g) heat-shrinking a portion of the tape for processing the wafer after the expansion, which is not overlapped with the wafer, thereby removing slack generated in the expanding step, And (h) picking up a step of picking up the wafer with the adhesive layer from the adhesive layer of the wafer processing tape.