KR20130137651A - 동일 프레임에 동일한 감광면에서 게이트-제어된 광과 비-게이트-제어된 광을 캡처하기 위한 방법 및 시스템 - Google Patents

동일 프레임에 동일한 감광면에서 게이트-제어된 광과 비-게이트-제어된 광을 캡처하기 위한 방법 및 시스템 Download PDF

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Publication number
KR20130137651A
KR20130137651A KR1020137015271A KR20137015271A KR20130137651A KR 20130137651 A KR20130137651 A KR 20130137651A KR 1020137015271 A KR1020137015271 A KR 1020137015271A KR 20137015271 A KR20137015271 A KR 20137015271A KR 20130137651 A KR20130137651 A KR 20130137651A
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South Korea
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gate
period
capture
image
during
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English (en)
Korean (ko)
Inventor
지오라 야하브
쉴로모 펠젠쉬테인
엘리 래리
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마이크로소프트 코포레이션
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Publication of KR20130137651A publication Critical patent/KR20130137651A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • G01S7/4863—Detector arrays, e.g. charge-transfer gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/56—Cameras or camera modules comprising electronic image sensors; Control thereof provided with illuminating means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/441—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading contiguous pixels from selected rows or columns of the array, e.g. interlaced scanning
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Electromagnetism (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Stereoscopic And Panoramic Photography (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Testing, Inspecting, Measuring Of Stereoscopic Televisions And Televisions (AREA)
KR1020137015271A 2010-12-15 2011-12-05 동일 프레임에 동일한 감광면에서 게이트-제어된 광과 비-게이트-제어된 광을 캡처하기 위한 방법 및 시스템 Withdrawn KR20130137651A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/968,775 2010-12-15
US12/968,775 US20120154535A1 (en) 2010-12-15 2010-12-15 Capturing gated and ungated light in the same frame on the same photosurface
PCT/US2011/063349 WO2012082443A2 (en) 2010-12-15 2011-12-05 Capturing gated and ungated light in the same frame on the same photosurface

Publications (1)

Publication Number Publication Date
KR20130137651A true KR20130137651A (ko) 2013-12-17

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Family Applications (1)

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KR1020137015271A Withdrawn KR20130137651A (ko) 2010-12-15 2011-12-05 동일 프레임에 동일한 감광면에서 게이트-제어된 광과 비-게이트-제어된 광을 캡처하기 위한 방법 및 시스템

Country Status (8)

Country Link
US (1) US20120154535A1 (enExample)
EP (1) EP2652956A4 (enExample)
JP (1) JP5898692B2 (enExample)
KR (1) KR20130137651A (enExample)
CN (1) CN102547156B (enExample)
CA (1) CA2820226A1 (enExample)
IL (1) IL226723A (enExample)
WO (1) WO2012082443A2 (enExample)

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US9516248B2 (en) * 2013-03-15 2016-12-06 Microsoft Technology Licensing, Llc Photosensor having enhanced sensitivity
EP2835973B1 (de) * 2013-08-06 2015-10-07 Sick Ag 3D-Kamera und Verfahren zur Erfassung von dreidimensionalen Bilddaten
US9462253B2 (en) * 2013-09-23 2016-10-04 Microsoft Technology Licensing, Llc Optical modules that reduce speckle contrast and diffraction artifacts
US9826214B2 (en) * 2014-09-08 2017-11-21 Microsoft Technology Licensing, Llc. Variable resolution pixel
US9608027B2 (en) * 2015-02-17 2017-03-28 Omnivision Technologies, Inc. Stacked embedded SPAD image sensor for attached 3D information
US10062201B2 (en) 2015-04-21 2018-08-28 Microsoft Technology Licensing, Llc Time-of-flight simulation of multipath light phenomena
US9945936B2 (en) 2015-05-27 2018-04-17 Microsoft Technology Licensing, Llc Reduction in camera to camera interference in depth measurements using spread spectrum
GB201516701D0 (en) * 2015-09-21 2015-11-04 Innovation & Business Dev Solutions Ltd Time of flight distance sensor
US10151838B2 (en) 2015-11-24 2018-12-11 Microsoft Technology Licensing, Llc Imaging sensor with shared pixel readout circuitry
US9760837B1 (en) 2016-03-13 2017-09-12 Microsoft Technology Licensing, Llc Depth from time-of-flight using machine learning
CN106231213B (zh) * 2016-09-29 2023-08-22 北方电子研究院安徽有限公司 一种可消除smear效应的带快门ccd像元结构
US10917626B2 (en) 2016-11-23 2021-02-09 Microsoft Technology Licensing, Llc Active illumination 3D imaging system
US10430958B2 (en) 2017-07-11 2019-10-01 Microsoft Technology Licensing, Llc Active illumination 3D zonal imaging system
US10901073B2 (en) 2017-07-11 2021-01-26 Microsoft Technology Licensing, Llc Illumination for zoned time-of-flight imaging
US10942274B2 (en) 2018-04-11 2021-03-09 Microsoft Technology Licensing, Llc Time of flight and picture camera
CN112461154B (zh) * 2019-09-09 2023-11-10 睿镞科技(北京)有限责任公司 3d成像方法、装置和深度相机
KR20210072458A (ko) * 2019-12-09 2021-06-17 에스케이하이닉스 주식회사 비행시간거리측정 방식의 센싱 시스템 및 이미지 센서
US11486987B2 (en) * 2020-10-05 2022-11-01 Argo AI, LLC Real time noise detection method and system for photon counting pixel array comprising a mask material to yield blocked pixels from detecting reflected pulses of energy

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Also Published As

Publication number Publication date
CN102547156A (zh) 2012-07-04
EP2652956A4 (en) 2014-11-19
WO2012082443A2 (en) 2012-06-21
WO2012082443A3 (en) 2012-10-04
CN102547156B (zh) 2015-01-07
CA2820226A1 (en) 2012-06-21
IL226723A (en) 2016-11-30
JP2014509462A (ja) 2014-04-17
US20120154535A1 (en) 2012-06-21
JP5898692B2 (ja) 2016-04-06
EP2652956A2 (en) 2013-10-23

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Patent event date: 20130613

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20150708

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid