KR20130129482A - 기판에 루테늄 금속층을 저온 증착하는 방법, 컴퓨터 판독가능 매체 및 반도체 장치 - Google Patents

기판에 루테늄 금속층을 저온 증착하는 방법, 컴퓨터 판독가능 매체 및 반도체 장치 Download PDF

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KR20130129482A
KR20130129482A KR1020137028870A KR20137028870A KR20130129482A KR 20130129482 A KR20130129482 A KR 20130129482A KR 1020137028870 A KR1020137028870 A KR 1020137028870A KR 20137028870 A KR20137028870 A KR 20137028870A KR 20130129482 A KR20130129482 A KR 20130129482A
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substrate
ruthenium
gas
vapor
precursor
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English (en)
Korean (ko)
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켄지 스즈키
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도쿄엘렉트론가부시키가이샤
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Publication of KR20130129482A publication Critical patent/KR20130129482A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020137028870A 2005-03-31 2006-03-23 기판에 루테늄 금속층을 저온 증착하는 방법, 컴퓨터 판독가능 매체 및 반도체 장치 Withdrawn KR20130129482A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/095,356 US7396766B2 (en) 2005-03-31 2005-03-31 Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
US11/095,356 2005-03-31
PCT/US2006/010606 WO2006104853A1 (en) 2005-03-31 2006-03-23 Low-temperature chemical vapor deposition of low-resistivity ruthenium layers

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020077025024A Division KR101351711B1 (ko) 2005-03-31 2006-03-23 기판에 루테늄 금속층을 저온 증착하는 방법, 컴퓨터 판독가능 매체 및 반도체 장치

Publications (1)

Publication Number Publication Date
KR20130129482A true KR20130129482A (ko) 2013-11-28

Family

ID=36698690

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020137028870A Withdrawn KR20130129482A (ko) 2005-03-31 2006-03-23 기판에 루테늄 금속층을 저온 증착하는 방법, 컴퓨터 판독가능 매체 및 반도체 장치
KR1020077025024A Expired - Lifetime KR101351711B1 (ko) 2005-03-31 2006-03-23 기판에 루테늄 금속층을 저온 증착하는 방법, 컴퓨터 판독가능 매체 및 반도체 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020077025024A Expired - Lifetime KR101351711B1 (ko) 2005-03-31 2006-03-23 기판에 루테늄 금속층을 저온 증착하는 방법, 컴퓨터 판독가능 매체 및 반도체 장치

Country Status (6)

Country Link
US (1) US7396766B2 (https=)
JP (1) JP4512159B2 (https=)
KR (2) KR20130129482A (https=)
CN (1) CN100593236C (https=)
TW (1) TWI321162B (https=)
WO (1) WO2006104853A1 (https=)

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US8399353B2 (en) * 2011-01-27 2013-03-19 Tokyo Electron Limited Methods of forming copper wiring and copper film, and film forming system
JP5862353B2 (ja) * 2011-08-05 2016-02-16 東京エレクトロン株式会社 半導体装置の製造方法
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Also Published As

Publication number Publication date
KR20070118151A (ko) 2007-12-13
JP4512159B2 (ja) 2010-07-28
KR101351711B1 (ko) 2014-01-14
CN101164161A (zh) 2008-04-16
JP2008538129A (ja) 2008-10-09
US20060220248A1 (en) 2006-10-05
US7396766B2 (en) 2008-07-08
TWI321162B (en) 2010-03-01
WO2006104853A1 (en) 2006-10-05
TW200702476A (en) 2007-01-16
CN100593236C (zh) 2010-03-03

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