CN100593236C - 低电阻率钌层的低温化学气相沉积 - Google Patents

低电阻率钌层的低温化学气相沉积 Download PDF

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Publication number
CN100593236C
CN100593236C CN200680010435A CN200680010435A CN100593236C CN 100593236 C CN100593236 C CN 100593236C CN 200680010435 A CN200680010435 A CN 200680010435A CN 200680010435 A CN200680010435 A CN 200680010435A CN 100593236 C CN100593236 C CN 100593236C
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substrate
gas
ruthenium
temperature
metal layer
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Expired - Fee Related
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CN200680010435A
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English (en)
Chinese (zh)
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CN101164161A (zh
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铃木健二
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN200680010435A 2005-03-31 2006-03-23 低电阻率钌层的低温化学气相沉积 Expired - Fee Related CN100593236C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/095,356 US7396766B2 (en) 2005-03-31 2005-03-31 Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
US11/095,356 2005-03-31

Publications (2)

Publication Number Publication Date
CN101164161A CN101164161A (zh) 2008-04-16
CN100593236C true CN100593236C (zh) 2010-03-03

Family

ID=36698690

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200680010435A Expired - Fee Related CN100593236C (zh) 2005-03-31 2006-03-23 低电阻率钌层的低温化学气相沉积

Country Status (6)

Country Link
US (1) US7396766B2 (https=)
JP (1) JP4512159B2 (https=)
KR (2) KR20130129482A (https=)
CN (1) CN100593236C (https=)
TW (1) TWI321162B (https=)
WO (1) WO2006104853A1 (https=)

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US7638002B2 (en) * 2004-11-29 2009-12-29 Tokyo Electron Limited Multi-tray film precursor evaporation system and thin film deposition system incorporating same
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US7488512B2 (en) * 2004-11-29 2009-02-10 Tokyo Electron Limited Method for preparing solid precursor tray for use in solid precursor evaporation system
US7345184B2 (en) * 2005-03-31 2008-03-18 Tokyo Electron Limited Method and system for refurbishing a metal carbonyl precursor
US7651570B2 (en) * 2005-03-31 2010-01-26 Tokyo Electron Limited Solid precursor vaporization system for use in chemical vapor deposition
US8222746B2 (en) * 2006-03-03 2012-07-17 Intel Corporation Noble metal barrier layers
US20070207611A1 (en) * 2006-03-03 2007-09-06 Lavoie Adrien R Noble metal precursors for copper barrier and seed layer
US7557047B2 (en) * 2006-06-09 2009-07-07 Micron Technology, Inc. Method of forming a layer of material using an atomic layer deposition process
US7846256B2 (en) * 2007-02-23 2010-12-07 Tokyo Electron Limited Ampule tray for and method of precursor surface area
US20080242088A1 (en) * 2007-03-29 2008-10-02 Tokyo Electron Limited Method of forming low resistivity copper film structures
US7829454B2 (en) * 2007-09-11 2010-11-09 Tokyo Electron Limited Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
US7704879B2 (en) * 2007-09-27 2010-04-27 Tokyo Electron Limited Method of forming low-resistivity recessed features in copper metallization
US7884012B2 (en) * 2007-09-28 2011-02-08 Tokyo Electron Limited Void-free copper filling of recessed features for semiconductor devices
JP2009105289A (ja) * 2007-10-24 2009-05-14 Tokyo Electron Ltd Ｃｕ配線の形成方法
US7776740B2 (en) * 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
US8247030B2 (en) * 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
US8679970B2 (en) * 2008-05-21 2014-03-25 International Business Machines Corporation Structure and process for conductive contact integration
US7964497B2 (en) * 2008-06-27 2011-06-21 International Business Machines Corporation Structure to facilitate plating into high aspect ratio vias
US7799681B2 (en) 2008-07-15 2010-09-21 Tokyo Electron Limited Method for forming a ruthenium metal cap layer
CN102112649A (zh) * 2008-08-05 2011-06-29 东京毅力科创株式会社 载置台构造
US7977235B2 (en) 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
US8716132B2 (en) 2009-02-13 2014-05-06 Tokyo Electron Limited Radiation-assisted selective deposition of metal-containing cap layers
JP2010189693A (ja) * 2009-02-17 2010-09-02 Tokyo Electron Ltd Ｃｕ膜の成膜方法および記憶媒体
KR20110081694A (ko) 2010-01-08 2011-07-14 삼성모바일디스플레이주식회사 박막 트랜지스터의 제조 방법 및 표시 장치의 제조 방법
US8399353B2 (en) * 2011-01-27 2013-03-19 Tokyo Electron Limited Methods of forming copper wiring and copper film, and film forming system
JP5862353B2 (ja) * 2011-08-05 2016-02-16 東京エレクトロン株式会社 半導体装置の製造方法
US20140134351A1 (en) 2012-11-09 2014-05-15 Applied Materials, Inc. Method to deposit cvd ruthenium
US9528184B2 (en) * 2015-02-13 2016-12-27 Eastman Kodak Company Atomic-layer deposition method using compound gas jet
US9506147B2 (en) * 2015-02-13 2016-11-29 Eastman Kodak Company Atomic-layer deposition apparatus using compound gas jet
WO2018035120A1 (en) * 2016-08-16 2018-02-22 Tokyo Electron Limited Method of metal filling recessed features in a substrate
CN109148455A (zh) * 2017-06-16 2019-01-04 旺宏电子股份有限公司 存储器元件及其制造方法

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Also Published As

Publication number Publication date
KR20070118151A (ko) 2007-12-13
JP4512159B2 (ja) 2010-07-28
KR101351711B1 (ko) 2014-01-14
CN101164161A (zh) 2008-04-16
JP2008538129A (ja) 2008-10-09
US20060220248A1 (en) 2006-10-05
US7396766B2 (en) 2008-07-08
TWI321162B (en) 2010-03-01
WO2006104853A1 (en) 2006-10-05
TW200702476A (en) 2007-01-16
KR20130129482A (ko) 2013-11-28

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