KR20130092387A - 플라즈마 프로세싱 장치와, 전기적 스큐들을 조정하기 위한 라이너 어셈블리 - Google Patents

플라즈마 프로세싱 장치와, 전기적 스큐들을 조정하기 위한 라이너 어셈블리 Download PDF

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Publication number
KR20130092387A
KR20130092387A KR1020127027857A KR20127027857A KR20130092387A KR 20130092387 A KR20130092387 A KR 20130092387A KR 1020127027857 A KR1020127027857 A KR 1020127027857A KR 20127027857 A KR20127027857 A KR 20127027857A KR 20130092387 A KR20130092387 A KR 20130092387A
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KR
South Korea
Prior art keywords
slots
liner assembly
chamber
plasma
liner
Prior art date
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Ceased
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KR1020127027857A
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English (en)
Korean (ko)
Inventor
제임스 디. 카르두치
지강 첸
샤히드 라우프
케네스 에스. 콜린스
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20130092387A publication Critical patent/KR20130092387A/ko
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495Means for protecting the vessel against plasma
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0418Apparatus for fluid treatment for etching
    • H10P72/0421Apparatus for fluid treatment for etching for drying etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/13Hollow or container type article [e.g., tube, vase, etc.]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
KR1020127027857A 2010-07-21 2011-07-06 플라즈마 프로세싱 장치와, 전기적 스큐들을 조정하기 위한 라이너 어셈블리 Ceased KR20130092387A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36646210P 2010-07-21 2010-07-21
US61/366,462 2010-07-21
PCT/US2011/043083 WO2012012200A1 (en) 2010-07-21 2011-07-06 Plasma processing apparatus and liner assembly for tuning electrical skews

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187007230A Division KR101970615B1 (ko) 2010-07-21 2011-07-06 플라즈마 프로세싱 장치와, 전기적 스큐들을 조정하기 위한 라이너 어셈블리

Publications (1)

Publication Number Publication Date
KR20130092387A true KR20130092387A (ko) 2013-08-20

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KR1020127027857A Ceased KR20130092387A (ko) 2010-07-21 2011-07-06 플라즈마 프로세싱 장치와, 전기적 스큐들을 조정하기 위한 라이너 어셈블리
KR1020187007230A Expired - Fee Related KR101970615B1 (ko) 2010-07-21 2011-07-06 플라즈마 프로세싱 장치와, 전기적 스큐들을 조정하기 위한 라이너 어셈블리

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KR1020187007230A Expired - Fee Related KR101970615B1 (ko) 2010-07-21 2011-07-06 플라즈마 프로세싱 장치와, 전기적 스큐들을 조정하기 위한 라이너 어셈블리

Country Status (6)

Country Link
US (2) US20120018402A1 (https=)
JP (1) JP6025722B2 (https=)
KR (2) KR20130092387A (https=)
CN (2) CN102860138A (https=)
TW (1) TWI502617B (https=)
WO (1) WO2012012200A1 (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI638587B (zh) 2011-10-05 2018-10-11 美商應用材料股份有限公司 對稱電漿處理腔室
US9653267B2 (en) 2011-10-06 2017-05-16 Applied Materials, Inc. Temperature controlled chamber liner
WO2013078420A2 (en) * 2011-11-24 2013-05-30 Lam Research Corporation Symmetric rf return path liner
US20140053984A1 (en) * 2012-08-27 2014-02-27 Hyun Ho Doh Symmetric return liner for modulating azimuthal non-uniformity in a plasma processing system
KR102200277B1 (ko) * 2013-03-15 2021-01-07 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱을 위한 챔버 디자인
CN105210173A (zh) * 2013-05-23 2015-12-30 应用材料公司 用于半导体处理腔室的经涂布的衬里组件
JP6307825B2 (ja) * 2013-09-25 2018-04-11 日新イオン機器株式会社 防着板支持部材、プラズマ源およびイオンビーム照射装置
US10138378B2 (en) 2014-01-30 2018-11-27 Monolith Materials, Inc. Plasma gas throat assembly and method
US10370539B2 (en) 2014-01-30 2019-08-06 Monolith Materials, Inc. System for high temperature chemical processing
US11939477B2 (en) 2014-01-30 2024-03-26 Monolith Materials, Inc. High temperature heat integration method of making carbon black
US10100200B2 (en) 2014-01-30 2018-10-16 Monolith Materials, Inc. Use of feedstock in carbon black plasma process
US11304288B2 (en) 2014-01-31 2022-04-12 Monolith Materials, Inc. Plasma torch design
WO2015179739A1 (en) 2014-05-23 2015-11-26 Corning Incorporated Low contrast anti-reflection articles with reduced scratch and fingerprint visibility
BR112017016692A2 (pt) * 2015-02-03 2018-04-10 Monolith Materials, Inc. método e aparelho para resfriamento regenerativo
US11987712B2 (en) 2015-02-03 2024-05-21 Monolith Materials, Inc. Carbon black generating system
JP1546799S (https=) * 2015-06-12 2016-03-28
CN111601447A (zh) 2015-07-29 2020-08-28 巨石材料公司 Dc等离子体焰炬电力设计方法和设备
CN108350280A (zh) 2015-08-07 2018-07-31 巨石材料公司 炭黑的制造方法
US20170066923A1 (en) 2015-09-09 2017-03-09 Monolith Materials, Inc. Circular few layer graphene
EP3350855A4 (en) 2015-09-14 2019-08-07 Monolith Materials, Inc. Soot from natural gas
JP1564934S (https=) * 2016-02-26 2016-12-05
EP4379005A3 (en) 2016-04-29 2024-10-16 Monolith Materials, Inc. Torch stinger method and apparatus
CN109562347A (zh) 2016-04-29 2019-04-02 巨石材料公司 颗粒生产工艺和设备的二次热添加
JP6991164B2 (ja) * 2016-06-15 2022-01-12 エヴァテック・アーゲー 真空処理チャンバ及び真空処理された板状基板の製造方法
MX2019010619A (es) 2017-03-08 2019-12-19 Monolith Mat Inc Sistemas y metodos para fabricar particulas de carbono con gas de transferencia termica.
CN110799602A (zh) 2017-04-20 2020-02-14 巨石材料公司 颗粒系统和方法
USD875053S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875055S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875054S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
CN111278767A (zh) 2017-08-28 2020-06-12 巨石材料公司 用于颗粒生成的系统和方法
EP3676335A4 (en) 2017-08-28 2021-03-31 Monolith Materials, Inc. PARTICULAR SYSTEMS AND PROCEDURES
EP3700980A4 (en) 2017-10-24 2021-04-21 Monolith Materials, Inc. PARTICULAR SYSTEMS AND PROCEDURES
JP7089987B2 (ja) * 2018-08-22 2022-06-23 株式会社日本製鋼所 原子層堆積装置
CN208835019U (zh) * 2018-11-12 2019-05-07 江苏鲁汶仪器有限公司 一种反应腔内衬
CN111312575B (zh) * 2018-12-12 2022-09-16 北京北方华创微电子装备有限公司 内衬组件及反应腔室
WO2020205203A1 (en) * 2019-04-05 2020-10-08 Applied Materials, Inc. Process system with variable flow valve
KR102746083B1 (ko) 2019-06-21 2024-12-26 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조 방법
KR102262026B1 (ko) * 2019-07-18 2021-06-07 세메스 주식회사 기판 처리 장치
KR20220137989A (ko) * 2020-02-10 2022-10-12 램 리써치 코포레이션 틸팅 제어를 위한 에지 플라즈마 밀도의 튜닝 가능성 (tunability)
US12100576B2 (en) * 2020-04-30 2024-09-24 Applied Materials, Inc. Metal oxide preclean chamber with improved selectivity and flow conductance
US11499223B2 (en) 2020-12-10 2022-11-15 Applied Materials, Inc. Continuous liner for use in a processing chamber

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401319A (en) * 1992-08-27 1995-03-28 Applied Materials, Inc. Lid and door for a vacuum chamber and pretreatment therefor
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
EP0624896B1 (en) * 1993-05-13 1999-09-22 Applied Materials, Inc. Contamination control in plasma contouring the plasma sheath using materials of differing rf impedances
US5641375A (en) * 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
JP3257328B2 (ja) * 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5763851A (en) * 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
JP2954028B2 (ja) * 1996-08-16 1999-09-27 山形日本電気株式会社 スパッタリング装置
US6251216B1 (en) * 1997-12-17 2001-06-26 Matsushita Electronics Corporation Apparatus and method for plasma processing
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6074953A (en) * 1998-08-28 2000-06-13 Micron Technology, Inc. Dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers
JP4437351B2 (ja) * 2000-01-14 2010-03-24 キヤノンアネルバ株式会社 プラズマエッチング装置
US20020069970A1 (en) * 2000-03-07 2002-06-13 Applied Materials, Inc. Temperature controlled semiconductor processing chamber liner
JP2002151473A (ja) * 2000-11-13 2002-05-24 Tokyo Electron Ltd プラズマ処理装置及びその組立方法
US7374636B2 (en) * 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
JP4030766B2 (ja) * 2002-01-30 2008-01-09 アルプス電気株式会社 プラズマ処理装置
JP2004079557A (ja) * 2002-08-09 2004-03-11 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
USD491963S1 (en) * 2002-11-20 2004-06-22 Tokyo Electron Limited Inner wall shield for a process chamber for manufacturing semiconductors
JP4079834B2 (ja) * 2003-06-04 2008-04-23 東京エレクトロン株式会社 プラズマ処理方法
EP1661161A2 (en) * 2003-08-07 2006-05-31 Sundew Technologies, LLC Perimeter partition-valve with protected seals
JP4149427B2 (ja) 2004-10-07 2008-09-10 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP4460418B2 (ja) 2004-10-13 2010-05-12 東京エレクトロン株式会社 シールド体および真空処理装置
US20060086458A1 (en) * 2004-10-25 2006-04-27 Kim Hong J Ceramic materials in plasma tool environments
US8356575B2 (en) * 2005-09-09 2013-01-22 Ulvac, Inc. Ion source and plasma processing apparatus
JP2007234770A (ja) * 2006-02-28 2007-09-13 Tokyo Electron Ltd プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
CN100573816C (zh) * 2006-12-06 2009-12-23 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室内衬及包含该内衬的反应腔室
CN100587904C (zh) * 2006-12-11 2010-02-03 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室内衬及包含该内衬的反应腔室
US8444926B2 (en) * 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
JP4874870B2 (ja) * 2007-05-29 2012-02-15 東京エレクトロン株式会社 基板処理システム及び基板処理装置
US9184072B2 (en) * 2007-07-27 2015-11-10 Mattson Technology, Inc. Advanced multi-workpiece processing chamber
JP5329072B2 (ja) * 2007-12-03 2013-10-30 東京エレクトロン株式会社 処理容器およびプラズマ処理装置
JP5317509B2 (ja) * 2008-03-27 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置および方法
US7987814B2 (en) * 2008-04-07 2011-08-02 Applied Materials, Inc. Lower liner with integrated flow equalizer and improved conductance
KR101013511B1 (ko) * 2008-08-12 2011-02-10 주식회사 맥시스 라이너 어셈블리 및 이를 구비하는 플라즈마 처리 장치
TWI638587B (zh) * 2011-10-05 2018-10-11 美商應用材料股份有限公司 對稱電漿處理腔室
US9653267B2 (en) * 2011-10-06 2017-05-16 Applied Materials, Inc. Temperature controlled chamber liner

Also Published As

Publication number Publication date
JP2013539159A (ja) 2013-10-17
CN108538695A (zh) 2018-09-14
US20150279633A1 (en) 2015-10-01
JP6025722B2 (ja) 2016-11-16
CN102860138A (zh) 2013-01-02
US20120018402A1 (en) 2012-01-26
CN108538695B (zh) 2021-01-29
TWI502617B (zh) 2015-10-01
TW201205639A (en) 2012-02-01
WO2012012200A1 (en) 2012-01-26
KR20180030729A (ko) 2018-03-23
KR101970615B1 (ko) 2019-04-19
US10242847B2 (en) 2019-03-26

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