JP6025722B2 - 電気的な偏りを調整するためのプラズマ処理装置及びライナーアセンブリ、プラズマ処理方法 - Google Patents

電気的な偏りを調整するためのプラズマ処理装置及びライナーアセンブリ、プラズマ処理方法 Download PDF

Info

Publication number
JP6025722B2
JP6025722B2 JP2013520730A JP2013520730A JP6025722B2 JP 6025722 B2 JP6025722 B2 JP 6025722B2 JP 2013520730 A JP2013520730 A JP 2013520730A JP 2013520730 A JP2013520730 A JP 2013520730A JP 6025722 B2 JP6025722 B2 JP 6025722B2
Authority
JP
Japan
Prior art keywords
plasma processing
processing apparatus
liner assembly
slots
liner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013520730A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013539159A5 (https=
JP2013539159A (ja
Inventor
ジェームズ ディー カードゥッチ
ジェームズ ディー カードゥッチ
ジガング チェン
ジガング チェン
シャヒド ラウフ
シャヒド ラウフ
ケネス エス コリンズ
ケネス エス コリンズ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2013539159A publication Critical patent/JP2013539159A/ja
Publication of JP2013539159A5 publication Critical patent/JP2013539159A5/ja
Application granted granted Critical
Publication of JP6025722B2 publication Critical patent/JP6025722B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
JP2013520730A 2010-07-21 2011-07-06 電気的な偏りを調整するためのプラズマ処理装置及びライナーアセンブリ、プラズマ処理方法 Expired - Fee Related JP6025722B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36646210P 2010-07-21 2010-07-21
US61/366,462 2010-07-21
PCT/US2011/043083 WO2012012200A1 (en) 2010-07-21 2011-07-06 Plasma processing apparatus and liner assembly for tuning electrical skews

Publications (3)

Publication Number Publication Date
JP2013539159A JP2013539159A (ja) 2013-10-17
JP2013539159A5 JP2013539159A5 (https=) 2016-02-18
JP6025722B2 true JP6025722B2 (ja) 2016-11-16

Family

ID=45492720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013520730A Expired - Fee Related JP6025722B2 (ja) 2010-07-21 2011-07-06 電気的な偏りを調整するためのプラズマ処理装置及びライナーアセンブリ、プラズマ処理方法

Country Status (6)

Country Link
US (2) US20120018402A1 (https=)
JP (1) JP6025722B2 (https=)
KR (2) KR20130092387A (https=)
CN (2) CN102860138A (https=)
TW (1) TWI502617B (https=)
WO (1) WO2012012200A1 (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201325326A (zh) 2011-10-05 2013-06-16 應用材料股份有限公司 電漿處理設備及其基板支撐組件
US9653267B2 (en) 2011-10-06 2017-05-16 Applied Materials, Inc. Temperature controlled chamber liner
SG11201402058TA (en) * 2011-11-24 2014-09-26 Lam Res Corp Symmetric rf return path liner
US20140053984A1 (en) * 2012-08-27 2014-02-27 Hyun Ho Doh Symmetric return liner for modulating azimuthal non-uniformity in a plasma processing system
WO2014149883A1 (en) * 2013-03-15 2014-09-25 Applied Materials, Inc. Chamber design for semiconductor processing
CN105210173A (zh) * 2013-05-23 2015-12-30 应用材料公司 用于半导体处理腔室的经涂布的衬里组件
JP6307825B2 (ja) * 2013-09-25 2018-04-11 日新イオン機器株式会社 防着板支持部材、プラズマ源およびイオンビーム照射装置
US10100200B2 (en) 2014-01-30 2018-10-16 Monolith Materials, Inc. Use of feedstock in carbon black plasma process
US11939477B2 (en) 2014-01-30 2024-03-26 Monolith Materials, Inc. High temperature heat integration method of making carbon black
US10138378B2 (en) 2014-01-30 2018-11-27 Monolith Materials, Inc. Plasma gas throat assembly and method
US10370539B2 (en) 2014-01-30 2019-08-06 Monolith Materials, Inc. System for high temperature chemical processing
WO2015116943A2 (en) 2014-01-31 2015-08-06 Monolith Materials, Inc. Plasma torch design
CN106537190B (zh) 2014-05-23 2019-08-16 康宁股份有限公司 具有减少的划痕与指纹可见性的低反差减反射制品
KR102705340B1 (ko) 2015-02-03 2024-09-09 모놀리스 머티어리얼스 인코포레이티드 카본 블랙 생성 시스템
CN107709608B (zh) * 2015-02-03 2019-09-17 巨石材料公司 再生冷却方法和设备
JP1546799S (https=) * 2015-06-12 2016-03-28
CA3032246C (en) 2015-07-29 2023-12-12 Monolith Materials, Inc. Dc plasma torch electrical power design method and apparatus
CA2995081C (en) 2015-08-07 2023-10-03 Monolith Materials, Inc. Method of making carbon black
EP3347306A4 (en) 2015-09-09 2019-04-17 Monolith Materials, Inc. CIRCULAR SINGLE-LAYER GRAPH
CA3034212C (en) 2015-09-14 2023-08-01 Monolith Materials, Inc. Carbon black from natural gas
JP1564934S (https=) * 2016-02-26 2016-12-05
CA3060482C (en) 2016-04-29 2023-04-11 Monolith Materials, Inc. Secondary heat addition to particle production process and apparatus
US11492496B2 (en) 2016-04-29 2022-11-08 Monolith Materials, Inc. Torch stinger method and apparatus
EP3472852B1 (en) * 2016-06-15 2021-08-11 Evatec AG Vacuum treatment chamber and method of manufacturing a vacuum treated plate-shaped substrate
CN110603297A (zh) 2017-03-08 2019-12-20 巨石材料公司 用热传递气体制备碳颗粒的系统和方法
EP3612600A4 (en) 2017-04-20 2021-01-27 Monolith Materials, Inc. PARTICULAR SYSTEMS AND PROCEDURES
USD875053S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875055S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875054S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
CN111278767A (zh) 2017-08-28 2020-06-12 巨石材料公司 用于颗粒生成的系统和方法
EP3676335A4 (en) 2017-08-28 2021-03-31 Monolith Materials, Inc. PARTICULAR SYSTEMS AND PROCEDURES
WO2019084200A1 (en) 2017-10-24 2019-05-02 Monolith Materials, Inc. PARTICULAR SYSTEMS AND METHODS
JP7089987B2 (ja) * 2018-08-22 2022-06-23 株式会社日本製鋼所 原子層堆積装置
CN208835019U (zh) * 2018-11-12 2019-05-07 江苏鲁汶仪器有限公司 一种反应腔内衬
CN111312575B (zh) * 2018-12-12 2022-09-16 北京北方华创微电子装备有限公司 内衬组件及反应腔室
WO2020205203A1 (en) * 2019-04-05 2020-10-08 Applied Materials, Inc. Process system with variable flow valve
KR102746083B1 (ko) 2019-06-21 2024-12-26 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조 방법
KR102262026B1 (ko) * 2019-07-18 2021-06-07 세메스 주식회사 기판 처리 장치
KR20220137989A (ko) * 2020-02-10 2022-10-12 램 리써치 코포레이션 틸팅 제어를 위한 에지 플라즈마 밀도의 튜닝 가능성 (tunability)
US12100576B2 (en) * 2020-04-30 2024-09-24 Applied Materials, Inc. Metal oxide preclean chamber with improved selectivity and flow conductance
US11499223B2 (en) 2020-12-10 2022-11-15 Applied Materials, Inc. Continuous liner for use in a processing chamber

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401319A (en) * 1992-08-27 1995-03-28 Applied Materials, Inc. Lid and door for a vacuum chamber and pretreatment therefor
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
DE69420774T2 (de) * 1993-05-13 2000-01-13 Applied Materials, Inc. Kontrolle der Kontamination in einem Plasma durch Ausgestaltung des Plasmaschildes unter Verwendung von Materialien mit verschiedenen RF-Impedanzen
US5641375A (en) * 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
JP3257328B2 (ja) * 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5763851A (en) * 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
JP2954028B2 (ja) * 1996-08-16 1999-09-27 山形日本電気株式会社 スパッタリング装置
US6251216B1 (en) * 1997-12-17 2001-06-26 Matsushita Electronics Corporation Apparatus and method for plasma processing
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6074953A (en) * 1998-08-28 2000-06-13 Micron Technology, Inc. Dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers
JP4437351B2 (ja) * 2000-01-14 2010-03-24 キヤノンアネルバ株式会社 プラズマエッチング装置
US20020069970A1 (en) * 2000-03-07 2002-06-13 Applied Materials, Inc. Temperature controlled semiconductor processing chamber liner
JP2002151473A (ja) * 2000-11-13 2002-05-24 Tokyo Electron Ltd プラズマ処理装置及びその組立方法
US7374636B2 (en) * 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
JP4030766B2 (ja) * 2002-01-30 2008-01-09 アルプス電気株式会社 プラズマ処理装置
JP2004079557A (ja) * 2002-08-09 2004-03-11 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
USD491963S1 (en) * 2002-11-20 2004-06-22 Tokyo Electron Limited Inner wall shield for a process chamber for manufacturing semiconductors
JP4079834B2 (ja) * 2003-06-04 2008-04-23 東京エレクトロン株式会社 プラズマ処理方法
EP1661161A2 (en) * 2003-08-07 2006-05-31 Sundew Technologies, LLC Perimeter partition-valve with protected seals
JP4149427B2 (ja) * 2004-10-07 2008-09-10 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP4460418B2 (ja) * 2004-10-13 2010-05-12 東京エレクトロン株式会社 シールド体および真空処理装置
US20060086458A1 (en) * 2004-10-25 2006-04-27 Kim Hong J Ceramic materials in plasma tool environments
US8356575B2 (en) * 2005-09-09 2013-01-22 Ulvac, Inc. Ion source and plasma processing apparatus
JP2007234770A (ja) * 2006-02-28 2007-09-13 Tokyo Electron Ltd プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
CN100573816C (zh) * 2006-12-06 2009-12-23 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室内衬及包含该内衬的反应腔室
CN100587904C (zh) * 2006-12-11 2010-02-03 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室内衬及包含该内衬的反应腔室
US8444926B2 (en) * 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
JP4874870B2 (ja) * 2007-05-29 2012-02-15 東京エレクトロン株式会社 基板処理システム及び基板処理装置
US9184072B2 (en) * 2007-07-27 2015-11-10 Mattson Technology, Inc. Advanced multi-workpiece processing chamber
JP5329072B2 (ja) * 2007-12-03 2013-10-30 東京エレクトロン株式会社 処理容器およびプラズマ処理装置
JP5317509B2 (ja) * 2008-03-27 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置および方法
US7987814B2 (en) * 2008-04-07 2011-08-02 Applied Materials, Inc. Lower liner with integrated flow equalizer and improved conductance
KR101013511B1 (ko) * 2008-08-12 2011-02-10 주식회사 맥시스 라이너 어셈블리 및 이를 구비하는 플라즈마 처리 장치
TW201325326A (zh) * 2011-10-05 2013-06-16 應用材料股份有限公司 電漿處理設備及其基板支撐組件
US9653267B2 (en) * 2011-10-06 2017-05-16 Applied Materials, Inc. Temperature controlled chamber liner

Also Published As

Publication number Publication date
WO2012012200A1 (en) 2012-01-26
US10242847B2 (en) 2019-03-26
TW201205639A (en) 2012-02-01
KR20180030729A (ko) 2018-03-23
US20150279633A1 (en) 2015-10-01
JP2013539159A (ja) 2013-10-17
CN108538695A (zh) 2018-09-14
KR101970615B1 (ko) 2019-04-19
CN102860138A (zh) 2013-01-02
KR20130092387A (ko) 2013-08-20
TWI502617B (zh) 2015-10-01
US20120018402A1 (en) 2012-01-26
CN108538695B (zh) 2021-01-29

Similar Documents

Publication Publication Date Title
JP6025722B2 (ja) 電気的な偏りを調整するためのプラズマ処理装置及びライナーアセンブリ、プラズマ処理方法
JP7328280B2 (ja) 改良されたフロー均一性／ガスコンダクタンスを備えた可変処理容積に対処するための対称チャンバ本体設計アーキテクチャ
US20180142354A1 (en) Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactors
JP2025069202A (ja) 対称プラズマ処理チャンバ
US8778813B2 (en) Confined process volume PECVD chamber
US8038834B2 (en) Method and system for controlling radical distribution
US20190148121A1 (en) Inline dps chamber hardware design to enable axis symmetry for improved flow conductance and uniformity
JP6643950B2 (ja) プラズマ処理方法
US7880392B2 (en) Plasma producing method and apparatus as well as plasma processing apparatus
TW202312221A (zh) 混合電漿源陣列
TWI770144B (zh) 電漿處理裝置
TW201338012A (zh) 用於等離子體處理裝置的可調節約束裝置
KR101173643B1 (ko) 다중 플라즈마 발생 영역을 갖는 플라즈마 반응기
US20100224128A1 (en) Semiconductor manufacturing apparatus
KR101798376B1 (ko) 유도결합 플라즈마 처리장치의 유전체창
KR20070090470A (ko) 균일한 가스분사를 위한 가스분배판
KR20160069546A (ko) 기판처리장치

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140702

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150605

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150609

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150907

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20151008

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20151105

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20151208

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151222

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160405

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20160704

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160707

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160913

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161011

R150 Certificate of patent or registration of utility model

Ref document number: 6025722

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees