CN102860138A - 用于调整电偏斜的等离子体处理装置与衬管组件 - Google Patents

用于调整电偏斜的等离子体处理装置与衬管组件 Download PDF

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Publication number
CN102860138A
CN102860138A CN2011800212014A CN201180021201A CN102860138A CN 102860138 A CN102860138 A CN 102860138A CN 2011800212014 A CN2011800212014 A CN 2011800212014A CN 201180021201 A CN201180021201 A CN 201180021201A CN 102860138 A CN102860138 A CN 102860138A
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China
Prior art keywords
slots
liner assembly
plasma processing
chamber
plasma
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Pending
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CN2011800212014A
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English (en)
Chinese (zh)
Inventor
詹姆斯·D·卡达希
陈智刚
沙希德·劳夫
肯尼思·S·柯林斯
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201810343864.1A priority Critical patent/CN108538695B/zh
Publication of CN102860138A publication Critical patent/CN102860138A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
CN2011800212014A 2010-07-21 2011-07-06 用于调整电偏斜的等离子体处理装置与衬管组件 Pending CN102860138A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810343864.1A CN108538695B (zh) 2010-07-21 2011-07-06 衬管组件、等离子体处理装置和等离子体处理基板的方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36646210P 2010-07-21 2010-07-21
US61/366,462 2010-07-21
PCT/US2011/043083 WO2012012200A1 (en) 2010-07-21 2011-07-06 Plasma processing apparatus and liner assembly for tuning electrical skews

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201810343864.1A Division CN108538695B (zh) 2010-07-21 2011-07-06 衬管组件、等离子体处理装置和等离子体处理基板的方法

Publications (1)

Publication Number Publication Date
CN102860138A true CN102860138A (zh) 2013-01-02

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN2011800212014A Pending CN102860138A (zh) 2010-07-21 2011-07-06 用于调整电偏斜的等离子体处理装置与衬管组件
CN201810343864.1A Expired - Fee Related CN108538695B (zh) 2010-07-21 2011-07-06 衬管组件、等离子体处理装置和等离子体处理基板的方法

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CN201810343864.1A Expired - Fee Related CN108538695B (zh) 2010-07-21 2011-07-06 衬管组件、等离子体处理装置和等离子体处理基板的方法

Country Status (6)

Country Link
US (2) US20120018402A1 (https=)
JP (1) JP6025722B2 (https=)
KR (2) KR20130092387A (https=)
CN (2) CN102860138A (https=)
TW (1) TWI502617B (https=)
WO (1) WO2012012200A1 (https=)

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CN114946009A (zh) * 2020-04-30 2022-08-26 应用材料公司 具有改进的选择性和流导性的金属氧化物预清洁腔室

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CN105210173A (zh) * 2013-05-23 2015-12-30 应用材料公司 用于半导体处理腔室的经涂布的衬里组件
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CN111601447A (zh) 2015-07-29 2020-08-28 巨石材料公司 Dc等离子体焰炬电力设计方法和设备
CN108350280A (zh) 2015-08-07 2018-07-31 巨石材料公司 炭黑的制造方法
US20170066923A1 (en) 2015-09-09 2017-03-09 Monolith Materials, Inc. Circular few layer graphene
EP3350855A4 (en) 2015-09-14 2019-08-07 Monolith Materials, Inc. Soot from natural gas
JP1564934S (https=) * 2016-02-26 2016-12-05
EP4379005A3 (en) 2016-04-29 2024-10-16 Monolith Materials, Inc. Torch stinger method and apparatus
CN109562347A (zh) 2016-04-29 2019-04-02 巨石材料公司 颗粒生产工艺和设备的二次热添加
JP6991164B2 (ja) * 2016-06-15 2022-01-12 エヴァテック・アーゲー 真空処理チャンバ及び真空処理された板状基板の製造方法
MX2019010619A (es) 2017-03-08 2019-12-19 Monolith Mat Inc Sistemas y metodos para fabricar particulas de carbono con gas de transferencia termica.
CN110799602A (zh) 2017-04-20 2020-02-14 巨石材料公司 颗粒系统和方法
USD875053S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875055S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
USD875054S1 (en) * 2017-04-28 2020-02-11 Applied Materials, Inc. Plasma connector liner
CN111278767A (zh) 2017-08-28 2020-06-12 巨石材料公司 用于颗粒生成的系统和方法
EP3676335A4 (en) 2017-08-28 2021-03-31 Monolith Materials, Inc. PARTICULAR SYSTEMS AND PROCEDURES
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JP7089987B2 (ja) * 2018-08-22 2022-06-23 株式会社日本製鋼所 原子層堆積装置
CN208835019U (zh) * 2018-11-12 2019-05-07 江苏鲁汶仪器有限公司 一种反应腔内衬
WO2020205203A1 (en) * 2019-04-05 2020-10-08 Applied Materials, Inc. Process system with variable flow valve
KR102746083B1 (ko) 2019-06-21 2024-12-26 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조 방법
KR102262026B1 (ko) * 2019-07-18 2021-06-07 세메스 주식회사 기판 처리 장치
KR20220137989A (ko) * 2020-02-10 2022-10-12 램 리써치 코포레이션 틸팅 제어를 위한 에지 플라즈마 밀도의 튜닝 가능성 (tunability)
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CN111312575A (zh) * 2018-12-12 2020-06-19 北京北方华创微电子装备有限公司 内衬组件及反应腔室
CN111312575B (zh) * 2018-12-12 2022-09-16 北京北方华创微电子装备有限公司 内衬组件及反应腔室
CN114946009A (zh) * 2020-04-30 2022-08-26 应用材料公司 具有改进的选择性和流导性的金属氧化物预清洁腔室

Also Published As

Publication number Publication date
JP2013539159A (ja) 2013-10-17
CN108538695A (zh) 2018-09-14
US20150279633A1 (en) 2015-10-01
JP6025722B2 (ja) 2016-11-16
US20120018402A1 (en) 2012-01-26
KR20130092387A (ko) 2013-08-20
CN108538695B (zh) 2021-01-29
TWI502617B (zh) 2015-10-01
TW201205639A (en) 2012-02-01
WO2012012200A1 (en) 2012-01-26
KR20180030729A (ko) 2018-03-23
KR101970615B1 (ko) 2019-04-19
US10242847B2 (en) 2019-03-26

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