KR20130028941A - 매립된 소스/드레인 실리사이드를 위한 델타 단분자층 도펀트 에피택시 - Google Patents

매립된 소스/드레인 실리사이드를 위한 델타 단분자층 도펀트 에피택시 Download PDF

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KR20130028941A
KR20130028941A KR1020127032728A KR20127032728A KR20130028941A KR 20130028941 A KR20130028941 A KR 20130028941A KR 1020127032728 A KR1020127032728 A KR 1020127032728A KR 20127032728 A KR20127032728 A KR 20127032728A KR 20130028941 A KR20130028941 A KR 20130028941A
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South Korea
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layer
gate stack
dopant
doped semiconductor
semiconductor material
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Korean (ko)
Inventor
케빈 케이. 찬
아비쉑 듀베
저드슨 알. 홀트
제프리 비. 존슨
징홍 리
박대규
정마오 주
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인터내셔널 비지네스 머신즈 코포레이션
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Publication of KR20130028941A publication Critical patent/KR20130028941A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
KR1020127032728A 2010-06-25 2011-06-10 매립된 소스/드레인 실리사이드를 위한 델타 단분자층 도펀트 에피택시 Ceased KR20130028941A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/823,163 US8299535B2 (en) 2010-06-25 2010-06-25 Delta monolayer dopants epitaxy for embedded source/drain silicide
US12/823,163 2010-06-25
PCT/US2011/039892 WO2011162977A2 (en) 2010-06-25 2011-06-10 Delta monolayer dopants epitaxy for embedded source/drain silicide

Publications (1)

Publication Number Publication Date
KR20130028941A true KR20130028941A (ko) 2013-03-20

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KR1020127032728A Ceased KR20130028941A (ko) 2010-06-25 2011-06-10 매립된 소스/드레인 실리사이드를 위한 델타 단분자층 도펀트 에피택시

Country Status (9)

Country Link
US (1) US8299535B2 (enExample)
JP (1) JP2013534052A (enExample)
KR (1) KR20130028941A (enExample)
CN (1) CN102906880B (enExample)
BR (1) BR112012031951A2 (enExample)
DE (1) DE112011101378B4 (enExample)
GB (1) GB2494608B (enExample)
SG (1) SG184824A1 (enExample)
WO (1) WO2011162977A2 (enExample)

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US9608117B2 (en) 2015-03-30 2017-03-28 Samsung Electronics Co., Ltd. Semiconductor devices including a finFET
US10177187B2 (en) 2015-05-28 2019-01-08 Taiwan Semiconductor Manufacturing Company Ltd. Implant damage free image sensor and method of the same

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US20130270647A1 (en) 2012-04-17 2013-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for nfet with high k metal gate
TWI605592B (zh) * 2012-11-22 2017-11-11 三星電子股份有限公司 在凹處包括一應力件的半導體裝置及其形成方法（二）
KR102059526B1 (ko) 2012-11-22 2019-12-26 삼성전자주식회사 내장 스트레서를 갖는 반도체 소자 형성 방법 및 관련된 소자
US9029226B2 (en) 2013-03-13 2015-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for doping lightly-doped-drain (LDD) regions of finFET devices
US9219133B2 (en) * 2013-05-30 2015-12-22 Stmicroelectronics, Inc. Method of making a semiconductor device using spacers for source/drain confinement
US9293534B2 (en) 2014-03-21 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of dislocations in source and drain regions of FinFET devices
US8841189B1 (en) 2013-06-14 2014-09-23 International Business Machines Corporation Transistor having all-around source/drain metal contact channel stressor and method to fabricate same
US10164107B2 (en) * 2014-01-24 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Embedded source or drain region of transistor with laterally extended portion
US9853154B2 (en) 2014-01-24 2017-12-26 Taiwan Semiconductor Manufacturing Company Ltd. Embedded source or drain region of transistor with downward tapered region under facet region
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US10665693B2 (en) * 2015-04-30 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9608117B2 (en) 2015-03-30 2017-03-28 Samsung Electronics Co., Ltd. Semiconductor devices including a finFET
US10177187B2 (en) 2015-05-28 2019-01-08 Taiwan Semiconductor Manufacturing Company Ltd. Implant damage free image sensor and method of the same

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Publication number Publication date
US8299535B2 (en) 2012-10-30
GB2494608A (en) 2013-03-13
JP2013534052A (ja) 2013-08-29
CN102906880A (zh) 2013-01-30
DE112011101378T8 (de) 2013-05-08
DE112011101378T5 (de) 2013-03-07
US20110316044A1 (en) 2011-12-29
GB2494608B (en) 2013-09-04
DE112011101378B4 (de) 2018-12-27
WO2011162977A2 (en) 2011-12-29
SG184824A1 (en) 2012-11-29
BR112012031951A2 (pt) 2018-03-06
CN102906880B (zh) 2015-08-19
GB201300789D0 (en) 2013-02-27
WO2011162977A3 (en) 2012-03-15

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