CN102906880B - 半导体结构及其制造方法 - Google Patents

半导体结构及其制造方法 Download PDF

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Publication number
CN102906880B
CN102906880B CN201180023991.XA CN201180023991A CN102906880B CN 102906880 B CN102906880 B CN 102906880B CN 201180023991 A CN201180023991 A CN 201180023991A CN 102906880 B CN102906880 B CN 102906880B
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China
Prior art keywords
layer
gate stack
doped semiconductor
semiconductor material
epitaxially doped
Prior art date
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Expired - Fee Related
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CN201180023991.XA
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English (en)
Chinese (zh)
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CN102906880A (zh
Inventor
K·K·陈
A·杜布
J·R·霍尔特
J·B·约翰逊
J·李
D-G·帕克
朱正茂
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CN201180023991.XA 2010-06-25 2011-06-10 半导体结构及其制造方法 Expired - Fee Related CN102906880B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/823,163 US8299535B2 (en) 2010-06-25 2010-06-25 Delta monolayer dopants epitaxy for embedded source/drain silicide
US12/823,163 2010-06-25
PCT/US2011/039892 WO2011162977A2 (en) 2010-06-25 2011-06-10 Delta monolayer dopants epitaxy for embedded source/drain silicide

Publications (2)

Publication Number Publication Date
CN102906880A CN102906880A (zh) 2013-01-30
CN102906880B true CN102906880B (zh) 2015-08-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180023991.XA Expired - Fee Related CN102906880B (zh) 2010-06-25 2011-06-10 半导体结构及其制造方法

Country Status (9)

Country Link
US (1) US8299535B2 (enExample)
JP (1) JP2013534052A (enExample)
KR (1) KR20130028941A (enExample)
CN (1) CN102906880B (enExample)
BR (1) BR112012031951A2 (enExample)
DE (1) DE112011101378B4 (enExample)
GB (1) GB2494608B (enExample)
SG (1) SG184824A1 (enExample)
WO (1) WO2011162977A2 (enExample)

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US9293534B2 (en) 2014-03-21 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of dislocations in source and drain regions of FinFET devices
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US9853154B2 (en) 2014-01-24 2017-12-26 Taiwan Semiconductor Manufacturing Company Ltd. Embedded source or drain region of transistor with downward tapered region under facet region
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US9893183B2 (en) * 2014-07-10 2018-02-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
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US10665693B2 (en) * 2015-04-30 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
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US10084090B2 (en) * 2015-11-09 2018-09-25 International Business Machines Corporation Method and structure of stacked FinFET
CN108735894B (zh) * 2017-04-14 2022-02-25 上海磁宇信息科技有限公司 一种高密度随机存储器架构
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Also Published As

Publication number Publication date
US8299535B2 (en) 2012-10-30
GB2494608A (en) 2013-03-13
JP2013534052A (ja) 2013-08-29
CN102906880A (zh) 2013-01-30
DE112011101378T8 (de) 2013-05-08
DE112011101378T5 (de) 2013-03-07
US20110316044A1 (en) 2011-12-29
GB2494608B (en) 2013-09-04
KR20130028941A (ko) 2013-03-20
DE112011101378B4 (de) 2018-12-27
WO2011162977A2 (en) 2011-12-29
SG184824A1 (en) 2012-11-29
BR112012031951A2 (pt) 2018-03-06
GB201300789D0 (en) 2013-02-27
WO2011162977A3 (en) 2012-03-15

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