KR20120105057A - 구리 박막의 증착 전구체로서 유용한 구리 （ⅰ） 화합물 - Google Patents

구리 박막의 증착 전구체로서 유용한 구리 （ⅰ） 화합물 Download PDF

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KR20120105057A
KR20120105057A KR1020127022046A KR20127022046A KR20120105057A KR 20120105057 A KR20120105057 A KR 20120105057A KR 1020127022046 A KR1020127022046 A KR 1020127022046A KR 20127022046 A KR20127022046 A KR 20127022046A KR 20120105057 A KR20120105057 A KR 20120105057A
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South Korea
Prior art keywords
copper
precursor
formula
alkyl
group
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Korean (ko)
Inventor
총잉 주
알렉산더 에스 보로비크
토마스 에이치 바움
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어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
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Application filed by 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 filed Critical 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
    • C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
    • C07C257/14—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020127022046A 2004-06-16 2005-03-14 구리 박막의 증착 전구체로서 유용한 구리 （ⅰ） 화합물 Withdrawn KR20120105057A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/869,532 US7166732B2 (en) 2004-06-16 2004-06-16 Copper (I) compounds useful as deposition precursors of copper thin films
US10/869,532 2004-06-16

Related Parent Applications (1)

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KR1020067027596A Division KR101224316B1 (ko) 2004-06-16 2005-03-14 구리 박막의 증착 전구체로서 유용한 구리 （ⅰ） 화합물

Publications (1)

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KR20120105057A true KR20120105057A (ko) 2012-09-24

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KR1020127022046A Withdrawn KR20120105057A (ko) 2004-06-16 2005-03-14 구리 박막의 증착 전구체로서 유용한 구리 （ⅰ） 화합물
KR1020067027596A Expired - Fee Related KR101224316B1 (ko) 2004-06-16 2005-03-14 구리 박막의 증착 전구체로서 유용한 구리 （ⅰ） 화합물

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Country Link
US (5) US7166732B2 (cg-RX-API-DMAC10.html)
EP (1) EP1765834A4 (cg-RX-API-DMAC10.html)
JP (1) JP2008502680A (cg-RX-API-DMAC10.html)
KR (2) KR20120105057A (cg-RX-API-DMAC10.html)
CN (1) CN101084229A (cg-RX-API-DMAC10.html)
IL (1) IL180072A0 (cg-RX-API-DMAC10.html)
TW (1) TWI397531B (cg-RX-API-DMAC10.html)
WO (1) WO2006009590A1 (cg-RX-API-DMAC10.html)

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US20100133689A1 (en) 2010-06-03
US20050281952A1 (en) 2005-12-22
US7531031B2 (en) 2009-05-12
US20080233276A1 (en) 2008-09-25
EP1765834A4 (en) 2010-10-06
JP2008502680A (ja) 2008-01-31
US20070116876A1 (en) 2007-05-24
IL180072A0 (en) 2007-05-15
WO2006009590A1 (en) 2006-01-26
US20050283012A1 (en) 2005-12-22
CN101084229A (zh) 2007-12-05
EP1765834A1 (en) 2007-03-28
US7241912B2 (en) 2007-07-10
KR101224316B1 (ko) 2013-01-18
US7166732B2 (en) 2007-01-23
US7371880B2 (en) 2008-05-13

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