KR20120037952A - 태양 전지용 투명 도전성 기판 및 태양 전지 - Google Patents

태양 전지용 투명 도전성 기판 및 태양 전지 Download PDF

Info

Publication number
KR20120037952A
KR20120037952A KR1020127001808A KR20127001808A KR20120037952A KR 20120037952 A KR20120037952 A KR 20120037952A KR 1020127001808 A KR1020127001808 A KR 1020127001808A KR 20127001808 A KR20127001808 A KR 20127001808A KR 20120037952 A KR20120037952 A KR 20120037952A
Authority
KR
South Korea
Prior art keywords
oxide layer
tin oxide
transparent conductive
conductive substrate
solar cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020127001808A
Other languages
English (en)
Korean (ko)
Inventor
유지 마츠이
겐이치 미나미
Original Assignee
아사히 가라스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아사히 가라스 가부시키가이샤 filed Critical 아사히 가라스 가부시키가이샤
Publication of KR20120037952A publication Critical patent/KR20120037952A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
KR1020127001808A 2009-07-30 2010-07-29 태양 전지용 투명 도전성 기판 및 태양 전지 Withdrawn KR20120037952A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2009-177702 2009-07-30
JP2009177702 2009-07-30
JP2010154101 2010-07-06
JPJP-P-2010-154101 2010-07-06

Publications (1)

Publication Number Publication Date
KR20120037952A true KR20120037952A (ko) 2012-04-20

Family

ID=43529427

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127001808A Withdrawn KR20120037952A (ko) 2009-07-30 2010-07-29 태양 전지용 투명 도전성 기판 및 태양 전지

Country Status (8)

Country Link
US (1) US20120125432A1 (cg-RX-API-DMAC7.html)
EP (1) EP2461373A1 (cg-RX-API-DMAC7.html)
JP (1) JPWO2011013775A1 (cg-RX-API-DMAC7.html)
KR (1) KR20120037952A (cg-RX-API-DMAC7.html)
CN (1) CN102473745A (cg-RX-API-DMAC7.html)
IN (1) IN2012DN01227A (cg-RX-API-DMAC7.html)
TW (1) TW201117391A (cg-RX-API-DMAC7.html)
WO (1) WO2011013775A1 (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021030078A1 (en) * 2019-08-09 2021-02-18 Micron Technology, Inc. Transistor and methods of forming transistors
US11024736B2 (en) 2019-08-09 2021-06-01 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
US11417730B2 (en) 2019-08-09 2022-08-16 Micron Technology, Inc. Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions
US11637175B2 (en) 2020-12-09 2023-04-25 Micron Technology, Inc. Vertical transistors

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012182161A (ja) * 2011-02-28 2012-09-20 Ulvac Japan Ltd 薄膜太陽電池、及び薄膜太陽電池の製造方法
JPWO2012169602A1 (ja) * 2011-06-08 2015-02-23 旭硝子株式会社 透明導電膜付き基板
WO2021131113A1 (ja) * 2019-12-24 2021-07-01 パナソニックＩｐマネジメント株式会社 太陽電池
CN115117022A (zh) * 2022-03-03 2022-09-27 晶科能源(海宁)有限公司 光伏电池及其形成方法、光伏组件

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4460108B2 (ja) 1999-05-18 2010-05-12 日本板硝子株式会社 光電変換装置用基板の製造方法
JP2002260448A (ja) 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
WO2004102677A1 (ja) 2003-05-13 2004-11-25 Asahi Glass Company, Limited 太陽電池用透明導電性基板およびその製造方法
JPWO2005027229A1 (ja) * 2003-08-29 2007-11-08 旭硝子株式会社 透明導電膜付き基体およびその製造方法
JPWO2007058118A1 (ja) * 2005-11-17 2009-04-30 旭硝子株式会社 太陽電池用透明導電性基板およびその製造方法
JP2009177702A (ja) 2008-01-28 2009-08-06 Nec Corp 情報通信システム、端末、アクセス装置、加入者情報収容装置、サービスプロファイル送信方法及びプログラム
JP2010154101A (ja) 2008-12-24 2010-07-08 Olympus Imaging Corp 撮像装置および撮像装置用プログラム

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021030078A1 (en) * 2019-08-09 2021-02-18 Micron Technology, Inc. Transistor and methods of forming transistors
US10964811B2 (en) 2019-08-09 2021-03-30 Micron Technology, Inc. Transistor and methods of forming transistors
US11024736B2 (en) 2019-08-09 2021-06-01 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
US11417730B2 (en) 2019-08-09 2022-08-16 Micron Technology, Inc. Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions
US11695071B2 (en) 2019-08-09 2023-07-04 Micron Technology, Inc. Transistor and methods of forming transistors
US11637175B2 (en) 2020-12-09 2023-04-25 Micron Technology, Inc. Vertical transistors

Also Published As

Publication number Publication date
WO2011013775A1 (ja) 2011-02-03
IN2012DN01227A (cg-RX-API-DMAC7.html) 2015-04-10
TW201117391A (en) 2011-05-16
JPWO2011013775A1 (ja) 2013-01-10
US20120125432A1 (en) 2012-05-24
EP2461373A1 (en) 2012-06-06
CN102473745A (zh) 2012-05-23

Similar Documents

Publication Publication Date Title
JP5068946B2 (ja) 太陽電池用透明導電性基板およびその製造方法
CN100595933C (zh) 太阳能电池用透明导电性基板的制造方法
KR20120037952A (ko) 태양 전지용 투명 도전성 기판 및 태양 전지
EP1343176A1 (en) Conductive film, production method therefor, substrate provided with it and photoelectric conversion device
JP5095776B2 (ja) 透明導電膜付き透明基体とその製造方法、およびこの基体を含む光電変換素子
KR20120036976A (ko) 태양 전지용 투명 도전성 기판 및 태양 전지
JPWO2010016468A1 (ja) 透明導電膜基板およびこの基板を用いた太陽電池
EP1462541B1 (en) Method for forming thin film.
JPWO2005027229A1 (ja) 透明導電膜付き基体およびその製造方法
JP2005347490A (ja) 透明導電性酸化物膜付き基体およびその製造方法ならびに光電変換素子
JPWO2012169602A1 (ja) 透明導電膜付き基板
JP2012084843A (ja) 透明導電性酸化物膜付き基体、および光電変換素子
JP2012114205A (ja) 透明導電膜基板およびその製造方法、ならびにこの基板を用いた太陽電池
JP2014038807A (ja) 透明導電性酸化物膜付き基体およびその製造方法
WO2012176817A1 (ja) 透明導電性酸化物膜付き基体
JP2011223023A (ja) 透明導電性酸化物膜付き基体およびその製造方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20120120

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid