KR20120032512A - 광전자 반도체 소자 - Google Patents

광전자 반도체 소자 Download PDF

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Publication number
KR20120032512A
KR20120032512A KR1020127000258A KR20127000258A KR20120032512A KR 20120032512 A KR20120032512 A KR 20120032512A KR 1020127000258 A KR1020127000258 A KR 1020127000258A KR 20127000258 A KR20127000258 A KR 20127000258A KR 20120032512 A KR20120032512 A KR 20120032512A
Authority
KR
South Korea
Prior art keywords
carrier
optoelectronic semiconductor
region
semiconductor device
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020127000258A
Other languages
English (en)
Korean (ko)
Inventor
슈테판 프로이스
미하엘 치츨슈페어거
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20120032512A publication Critical patent/KR20120032512A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10W90/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Device Packages (AREA)
KR1020127000258A 2009-06-04 2010-05-05 광전자 반도체 소자 Withdrawn KR20120032512A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009023854.9A DE102009023854B4 (de) 2009-06-04 2009-06-04 Optoelektronisches Halbleiterbauelement
DE102009023854.9 2009-06-04

Publications (1)

Publication Number Publication Date
KR20120032512A true KR20120032512A (ko) 2012-04-05

Family

ID=42651263

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127000258A Withdrawn KR20120032512A (ko) 2009-06-04 2010-05-05 광전자 반도체 소자

Country Status (7)

Country Link
US (1) US8482025B2 (enExample)
EP (1) EP2438613B1 (enExample)
JP (1) JP2012529164A (enExample)
KR (1) KR20120032512A (enExample)
CN (1) CN102460696B (enExample)
DE (1) DE102009023854B4 (enExample)
WO (1) WO2010139518A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014119390A1 (de) * 2014-12-22 2016-06-23 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102024115867A1 (de) * 2024-06-06 2025-12-11 Ams-Osram International Gmbh Optoelektronisches bauteil mit einem optoelektronischen-halbleiterchip und einem dem optoelektronischen halbleiterchip zugeordneten zusatzchip

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3235650A1 (de) * 1982-09-27 1984-03-29 Philips Patentverwaltung Gmbh, 2000 Hamburg Informationskarte und verfahren zu ihrer herstellung
JP2966591B2 (ja) 1991-08-02 1999-10-25 三洋電機株式会社 光半導体装置
JPH05327027A (ja) 1992-05-26 1993-12-10 Sharp Corp 電圧変動表示素子
JP2816629B2 (ja) * 1992-06-12 1998-10-27 シャープ株式会社 抵抗内蔵型発光装置
TW408497B (en) 1997-11-25 2000-10-11 Matsushita Electric Works Ltd LED illuminating apparatus
US6185240B1 (en) 1998-01-30 2001-02-06 Motorola, Inc. Semiconductor laser having electro-static discharge protection
JP2001036140A (ja) * 1999-07-16 2001-02-09 Stanley Electric Co Ltd 静電対策表面実装型ｌｅｄ
US6787916B2 (en) * 2001-09-13 2004-09-07 Tru-Si Technologies, Inc. Structures having a substrate with a cavity and having an integrated circuit bonded to a contact pad located in the cavity
JP4020644B2 (ja) * 2002-01-09 2007-12-12 アルプス電気株式会社 Ｓａｗフィルタモジュール
JP3657246B2 (ja) * 2002-07-29 2005-06-08 Ｎｅｃエレクトロニクス株式会社 半導体装置
DE10237084A1 (de) * 2002-08-05 2004-02-19 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektrischen Leiterrahmens und Verfahren zum Herstellen eines oberflächenmontierbaren Halbleiterbauelements
US7244965B2 (en) 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
KR100638876B1 (ko) * 2005-07-22 2006-10-27 삼성전기주식회사 보호 소자의 배치 구성을 개선한 측면형 발광 다이오드
DE102006032415A1 (de) 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement
JP4789673B2 (ja) 2005-10-27 2011-10-12 京セラ株式会社 発光素子収納用パッケージならびにこれを用いた光源および発光装置
KR100735310B1 (ko) * 2006-04-21 2007-07-04 삼성전기주식회사 다층 반사 면 구조를 갖는 엘이디 패키지 및 그 제조방법
KR101134752B1 (ko) * 2006-07-14 2012-04-13 엘지이노텍 주식회사 Ｌｅｄ 패키지
US20080089072A1 (en) 2006-10-11 2008-04-17 Alti-Electronics Co., Ltd. High Power Light Emitting Diode Package
TW200820463A (en) 2006-10-25 2008-05-01 Lighthouse Technology Co Ltd Light-improving SMD diode holder and package thereof
DE102007001706A1 (de) 2007-01-11 2008-07-17 Osram Opto Semiconductors Gmbh Gehäuse für optoelektronisches Bauelement und Anordnung eines optoelektronischen Bauelementes in einem Gehäuse
JP5060172B2 (ja) * 2007-05-29 2012-10-31 岩谷産業株式会社 半導体発光装置
US7781872B2 (en) * 2007-12-19 2010-08-24 Fairchild Semiconductor Corporation Package with multiple dies

Also Published As

Publication number Publication date
DE102009023854A1 (de) 2010-12-09
WO2010139518A1 (de) 2010-12-09
JP2012529164A (ja) 2012-11-15
US8482025B2 (en) 2013-07-09
CN102460696A (zh) 2012-05-16
EP2438613B1 (de) 2019-07-03
EP2438613A1 (de) 2012-04-11
DE102009023854B4 (de) 2023-11-09
US20120126279A1 (en) 2012-05-24
CN102460696B (zh) 2014-10-29

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Legal Events

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PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R15-X000 Change to inventor requested

St.27 status event code: A-3-3-R10-R15-oth-X000

R16-X000 Change to inventor recorded

St.27 status event code: A-3-3-R10-R16-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000