JP2012529164A - オプトエレクトロニクス半導体素子 - Google Patents

オプトエレクトロニクス半導体素子 Download PDF

Info

Publication number
JP2012529164A
JP2012529164A JP2012513524A JP2012513524A JP2012529164A JP 2012529164 A JP2012529164 A JP 2012529164A JP 2012513524 A JP2012513524 A JP 2012513524A JP 2012513524 A JP2012513524 A JP 2012513524A JP 2012529164 A JP2012529164 A JP 2012529164A
Authority
JP
Japan
Prior art keywords
support
region
optoelectronic semiconductor
electronic component
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012513524A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012529164A5 (enExample
Inventor
プロイス シュテファン
ツィツルスペルガー ミヒャエル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2012529164A publication Critical patent/JP2012529164A/ja
Publication of JP2012529164A5 publication Critical patent/JP2012529164A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10W90/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
JP2012513524A 2009-06-04 2010-05-05 オプトエレクトロニクス半導体素子 Pending JP2012529164A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009023854.9A DE102009023854B4 (de) 2009-06-04 2009-06-04 Optoelektronisches Halbleiterbauelement
DE102009023854.9 2009-06-04
PCT/EP2010/056118 WO2010139518A1 (de) 2009-06-04 2010-05-05 Optoelektronisches halbleiterbauelement

Publications (2)

Publication Number Publication Date
JP2012529164A true JP2012529164A (ja) 2012-11-15
JP2012529164A5 JP2012529164A5 (enExample) 2013-05-02

Family

ID=42651263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012513524A Pending JP2012529164A (ja) 2009-06-04 2010-05-05 オプトエレクトロニクス半導体素子

Country Status (7)

Country Link
US (1) US8482025B2 (enExample)
EP (1) EP2438613B1 (enExample)
JP (1) JP2012529164A (enExample)
KR (1) KR20120032512A (enExample)
CN (1) CN102460696B (enExample)
DE (1) DE102009023854B4 (enExample)
WO (1) WO2010139518A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014119390A1 (de) * 2014-12-22 2016-06-23 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102024115867A1 (de) * 2024-06-06 2025-12-11 Ams-Osram International Gmbh Optoelektronisches bauteil mit einem optoelektronischen-halbleiterchip und einem dem optoelektronischen halbleiterchip zugeordneten zusatzchip

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05347434A (ja) * 1992-06-12 1993-12-27 Sharp Corp 抵抗内蔵型発光装置
JP2001036140A (ja) * 1999-07-16 2001-02-09 Stanley Electric Co Ltd 静電対策表面実装型ｌｅｄ
JP2007036238A (ja) * 2005-07-22 2007-02-08 Samsung Electro-Mechanics Co Ltd 保護素子の配置構成を改善した側面型発光ダイオード

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3235650A1 (de) * 1982-09-27 1984-03-29 Philips Patentverwaltung Gmbh, 2000 Hamburg Informationskarte und verfahren zu ihrer herstellung
JP2966591B2 (ja) 1991-08-02 1999-10-25 三洋電機株式会社 光半導体装置
JPH05327027A (ja) 1992-05-26 1993-12-10 Sharp Corp 電圧変動表示素子
TW408497B (en) 1997-11-25 2000-10-11 Matsushita Electric Works Ltd LED illuminating apparatus
US6185240B1 (en) 1998-01-30 2001-02-06 Motorola, Inc. Semiconductor laser having electro-static discharge protection
US6787916B2 (en) * 2001-09-13 2004-09-07 Tru-Si Technologies, Inc. Structures having a substrate with a cavity and having an integrated circuit bonded to a contact pad located in the cavity
JP4020644B2 (ja) * 2002-01-09 2007-12-12 アルプス電気株式会社 Ｓａｗフィルタモジュール
JP3657246B2 (ja) * 2002-07-29 2005-06-08 Ｎｅｃエレクトロニクス株式会社 半導体装置
DE10237084A1 (de) * 2002-08-05 2004-02-19 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektrischen Leiterrahmens und Verfahren zum Herstellen eines oberflächenmontierbaren Halbleiterbauelements
US7244965B2 (en) 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
DE102006032415A1 (de) 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement
JP4789673B2 (ja) 2005-10-27 2011-10-12 京セラ株式会社 発光素子収納用パッケージならびにこれを用いた光源および発光装置
KR100735310B1 (ko) * 2006-04-21 2007-07-04 삼성전기주식회사 다층 반사 면 구조를 갖는 엘이디 패키지 및 그 제조방법
KR101134752B1 (ko) * 2006-07-14 2012-04-13 엘지이노텍 주식회사 Ｌｅｄ 패키지
US20080089072A1 (en) 2006-10-11 2008-04-17 Alti-Electronics Co., Ltd. High Power Light Emitting Diode Package
TW200820463A (en) 2006-10-25 2008-05-01 Lighthouse Technology Co Ltd Light-improving SMD diode holder and package thereof
DE102007001706A1 (de) 2007-01-11 2008-07-17 Osram Opto Semiconductors Gmbh Gehäuse für optoelektronisches Bauelement und Anordnung eines optoelektronischen Bauelementes in einem Gehäuse
JP5060172B2 (ja) * 2007-05-29 2012-10-31 岩谷産業株式会社 半導体発光装置
US7781872B2 (en) * 2007-12-19 2010-08-24 Fairchild Semiconductor Corporation Package with multiple dies

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05347434A (ja) * 1992-06-12 1993-12-27 Sharp Corp 抵抗内蔵型発光装置
JP2001036140A (ja) * 1999-07-16 2001-02-09 Stanley Electric Co Ltd 静電対策表面実装型ｌｅｄ
JP2007036238A (ja) * 2005-07-22 2007-02-08 Samsung Electro-Mechanics Co Ltd 保護素子の配置構成を改善した側面型発光ダイオード

Also Published As

Publication number Publication date
DE102009023854A1 (de) 2010-12-09
WO2010139518A1 (de) 2010-12-09
KR20120032512A (ko) 2012-04-05
US8482025B2 (en) 2013-07-09
CN102460696A (zh) 2012-05-16
EP2438613B1 (de) 2019-07-03
EP2438613A1 (de) 2012-04-11
DE102009023854B4 (de) 2023-11-09
US20120126279A1 (en) 2012-05-24
CN102460696B (zh) 2014-10-29

Similar Documents

Publication Publication Date Title
US9559491B2 (en) Laser diode with cooling along even the side surfaces
US9196402B2 (en) Electronic component assembly comprising a varistor and a semiconductor component
US7804105B2 (en) Side view type LED package
KR102627890B1 (ko) 자외선 발광 장치
US20200066943A1 (en) Light-emitting apparatus
US8421089B2 (en) Light emitting device
JP6711098B2 (ja) 半導体装置の放熱構造
CN102144305A (zh) 光电子部件和制造光电子部件的方法
US9978733B2 (en) Optoelectronic semiconductor component and method for producing same
KR102125734B1 (ko) 광전자 컴포넌트 및 광전자 컴포넌트를 가진 전자 디바이스
JP2012529164A (ja) オプトエレクトロニクス半導体素子
US9461438B2 (en) Housing for laser diodes and method for producing a housing
JP5502881B2 (ja) 表面実装可能な装置
KR20110080548A (ko) 발광 장치
JP6732477B2 (ja) Ｌｅｄ発光装置
US10411157B2 (en) Optoelectronic component and method for the production thereof
CN105580149A (zh) 光电子发光组件和导体框复合件
JP3130857U (ja) 半導体素子
US20240355989A1 (en) Optoelectronic component
KR101492522B1 (ko) 소자 패키지
JP2009059745A (ja) 発光装置
CN106537620A (zh) 电子组件、用于制造电子组件的引线框架和方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130311

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130311

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131225

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140106

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140609