KR20110131301A - 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법 - Google Patents

홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법 Download PDF

Info

Publication number
KR20110131301A
KR20110131301A KR1020117024842A KR20117024842A KR20110131301A KR 20110131301 A KR20110131301 A KR 20110131301A KR 1020117024842 A KR1020117024842 A KR 1020117024842A KR 20117024842 A KR20117024842 A KR 20117024842A KR 20110131301 A KR20110131301 A KR 20110131301A
Authority
KR
South Korea
Prior art keywords
hole
electron beam
electron
zone
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020117024842A
Other languages
English (en)
Korean (ko)
Inventor
호 섭 김
Original Assignee
전자빔기술센터 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 전자빔기술센터 주식회사 filed Critical 전자빔기술센터 주식회사
Publication of KR20110131301A publication Critical patent/KR20110131301A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/307—Contactless testing using electron beams of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H01J2237/0635—Multiple source, e.g. comb or array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
    • H01J2237/281—Bottom of trenches or holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020117024842A 2006-04-03 2007-04-03 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법 Ceased KR20110131301A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20060030129 2006-04-03
KR1020060030129 2006-04-03

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020087023284A Division KR20080102232A (ko) 2006-04-03 2007-04-03 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020137017197A Division KR20130100191A (ko) 2006-04-03 2007-04-03 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법

Publications (1)

Publication Number Publication Date
KR20110131301A true KR20110131301A (ko) 2011-12-06

Family

ID=38563867

Family Applications (4)

Application Number Title Priority Date Filing Date
KR1020117024842A Ceased KR20110131301A (ko) 2006-04-03 2007-04-03 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법
KR1020087023284A Ceased KR20080102232A (ko) 2006-04-03 2007-04-03 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법
KR1020137017197A Ceased KR20130100191A (ko) 2006-04-03 2007-04-03 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법
KR1020147013967A Expired - Fee Related KR101484454B1 (ko) 2006-04-03 2007-04-03 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR1020087023284A Ceased KR20080102232A (ko) 2006-04-03 2007-04-03 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법
KR1020137017197A Ceased KR20130100191A (ko) 2006-04-03 2007-04-03 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법
KR1020147013967A Expired - Fee Related KR101484454B1 (ko) 2006-04-03 2007-04-03 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법

Country Status (7)

Country Link
US (1) US7968844B2 (https=)
EP (1) EP2002473A4 (https=)
JP (1) JP2009532894A (https=)
KR (4) KR20110131301A (https=)
CN (1) CN101416295A (https=)
TW (1) TWI334933B (https=)
WO (1) WO2007114642A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012105788A1 (de) 2011-12-08 2013-06-13 Hyundai Motor Company Steuervorrichtung einer Dämpferkupplung eines Automatikgetriebes und ein Verfahren für dieselbe

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102053106B (zh) * 2009-11-09 2013-03-27 中芯国际集成电路制造(上海)有限公司 一种缺陷检测方法
US20110294071A1 (en) * 2010-05-28 2011-12-01 Canon Kabushiki Kaisha Electron gun, lithography apparatus, method of manufacturing article, and electron beam apparatus
WO2011151116A1 (en) * 2010-06-03 2011-12-08 Carl Zeiss Sms Gmbh A method for determining the performance of a photolithographic mask
US8399264B2 (en) * 2010-11-30 2013-03-19 Intel Corporation Alignment inspection
US9304160B1 (en) 2012-05-08 2016-04-05 Kla-Tencor Corporation Defect inspection apparatus, system, and method
JP6069723B2 (ja) * 2012-06-06 2017-02-01 澁谷工業株式会社 微小ボール搭載ワークのリペア装置
WO2014074649A1 (en) 2012-11-06 2014-05-15 Purdue Research Foundation Methods for directed irradiation synthesis with ion and thermal beams
JP5965851B2 (ja) * 2013-02-15 2016-08-10 株式会社日立ハイテクノロジーズ 試料観察装置
KR102086362B1 (ko) 2013-03-08 2020-03-09 삼성전자주식회사 편광화된 빛을 이용하여 공정을 모니터링하는 반도체 제조 설비 및 모니터링 방법
US9040910B2 (en) * 2013-05-23 2015-05-26 Tao Luo Multi-column electron beam inspection that uses custom printing methods
JP2015141985A (ja) * 2014-01-28 2015-08-03 株式会社東芝 検査装置、及び検査方法
KR20170031806A (ko) * 2015-08-13 2017-03-22 한국기계연구원 전자빔을 이용한 인쇄회로기판의 검사장치 및 방법
KR101720697B1 (ko) * 2016-07-06 2017-04-03 씨이비티 주식회사 대면적 전계방출원 장치에의 전자 방출원의 균일 방출 검사 방법
CN108615666B (zh) * 2016-12-09 2024-04-19 上海凯世通半导体股份有限公司 束流检测装置
US10649026B2 (en) * 2017-03-30 2020-05-12 Globalfoundries Inc. Apparatus for and method of net trace prior level subtraction
WO2020084729A1 (ja) * 2018-10-25 2020-04-30 株式会社日立ハイテクノロジーズ 荷電粒子線装置、荷電粒子線装置のオートフォーカス処理方法、及び検出器
EP3906579A1 (en) * 2018-12-31 2021-11-10 ASML Netherlands B.V. A charged particle beam system for scanning a sample
CN116807664A (zh) * 2023-07-24 2023-09-29 桂林市啄木鸟医疗器械有限公司 被覆盖孔洞的位置检测方法、装置及存储介质

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2970113B2 (ja) 1991-09-20 1999-11-02 富士通株式会社 パターン検査装置
US5384463A (en) * 1991-06-10 1995-01-24 Fujisu Limited Pattern inspection apparatus and electron beam apparatus
JP2000100369A (ja) * 1998-09-28 2000-04-07 Jeol Ltd 荷電粒子ビーム装置
JP3175765B2 (ja) * 1998-12-08 2001-06-11 日本電気株式会社 半導体ウエハーの検査方法
JP3749107B2 (ja) * 1999-11-05 2006-02-22 ファブソリューション株式会社 半導体デバイス検査装置
JP3732738B2 (ja) * 2000-12-08 2006-01-11 ファブソリューション株式会社 半導体デバイス検査装置
JP2002231780A (ja) * 2001-01-30 2002-08-16 Jeol Ltd 荷電粒子ビームを用いたホールの検査方法
US7038224B2 (en) * 2002-07-30 2006-05-02 Applied Materials, Israel, Ltd. Contact opening metrology
US7078690B2 (en) * 2002-02-04 2006-07-18 Applied Materials, Israel, Ltd. Monitoring of contact hole production
JP2004071954A (ja) * 2002-08-08 2004-03-04 Jeol Ltd ホールの検査方法
WO2004068529A2 (en) * 2003-01-27 2004-08-12 Ebara Corporation Mapping-projection-type electron beam apparatus for inspecting sample by using electrons reflected from the sample
JP4080902B2 (ja) 2003-01-30 2008-04-23 株式会社トプコン 半導体デバイス解析装置および解析方法
KR100562701B1 (ko) * 2004-01-07 2006-03-23 삼성전자주식회사 전자 소스 및 이를 이용한 구멍의 오픈 불량 검사 장치와방법
JP2005233757A (ja) * 2004-02-19 2005-09-02 Oki Electric Ind Co Ltd ホールパターン検査方法及びホールパターン検査装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012105788A1 (de) 2011-12-08 2013-06-13 Hyundai Motor Company Steuervorrichtung einer Dämpferkupplung eines Automatikgetriebes und ein Verfahren für dieselbe
DE102012105788A9 (de) 2011-12-08 2013-09-05 Hyundai Motor Company Steuervorrichtung einer Dämpferkupplung eines Automatikgetriebes und ein Verfahren für dieselbe

Also Published As

Publication number Publication date
CN101416295A (zh) 2009-04-22
KR20130100191A (ko) 2013-09-09
US20090152461A1 (en) 2009-06-18
EP2002473A1 (en) 2008-12-17
KR101484454B1 (ko) 2015-01-22
KR20140100477A (ko) 2014-08-14
US7968844B2 (en) 2011-06-28
EP2002473A4 (en) 2011-08-03
TWI334933B (en) 2010-12-21
JP2009532894A (ja) 2009-09-10
WO2007114642A1 (en) 2007-10-11
KR20080102232A (ko) 2008-11-24
TW200739110A (en) 2007-10-16

Similar Documents

Publication Publication Date Title
KR101484454B1 (ko) 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법
KR100544222B1 (ko) 웨이퍼의 결함을 검출하는 방법 및 장치
US8421010B2 (en) Charged particle beam device for scanning a sample using a charged particle beam to inspect the sample
US20110133066A1 (en) Pattern inspection device and method
JP4997076B2 (ja) 荷電粒子線装置、及び荷電粒子線装置における画像生成方法
JP2003202217A (ja) パターン欠陥検査方法及びパターン欠陥検査装置
JP2002083849A (ja) 半導体デバイス検査装置
US7081625B2 (en) Charged particle beam apparatus
US12474284B2 (en) Method of inspecting a sample, and multi-electron beam inspection system
JP2018151202A (ja) 電子ビーム検査装置および電子ビーム検査方法
KR20060034696A (ko) 기준 구조 엘리먼트를 이용하여 구조 엘리먼트의 단면피쳐를 검출하는 시스템 및 방법
US11280749B1 (en) Holes tilt angle measurement using FIB diagonal cut
KR101011242B1 (ko) 마이크로칼럼을 이용한 미세 패턴 및 형상 검사장치
CN116018612A (zh) 用于对基板作缺陷检查测量的方法、用于对基板成像的设备及其操作方法
JP2003133379A (ja) 半導体装置の検査装置及び半導体装置の製造方法
JP2004170395A (ja) 荷電粒子線装置
JP3950891B2 (ja) パターン欠陥検査方法及びパターン欠陥検査装置
US20230266258A1 (en) Method of inspecting semiconductor device
TWI920456B (zh) 具有光束傾斜之帶電粒子束設備及其方法
US20150241369A1 (en) Charged particle beam apparatus, image acquiring method and non-transitory computer-readable recording medium
JP4224058B2 (ja) 薄膜トランジスター基板の検査装置
JP2005129546A (ja) パターン欠陥検査方法及びパターン欠陥検査装置
JPH07335171A (ja) 集束イオンビーム装置における加工位置特定方法

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A17-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

A107 Divisional application of patent
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A17-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J121 Written withdrawal of request for trial
PC1202 Submission of document of withdrawal before decision of registration

St.27 status event code: N-1-6-B10-B11-nap-PC1202

PJ1201 Withdrawal of trial

St.27 status event code: A-3-3-V10-V13-apl-PJ1201

WITB Written withdrawal of application
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000