CN101416295A - 孔检查装置和使用该孔检查装置的孔检查方法 - Google Patents

孔检查装置和使用该孔检查装置的孔检查方法 Download PDF

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Publication number
CN101416295A
CN101416295A CNA200780011762XA CN200780011762A CN101416295A CN 101416295 A CN101416295 A CN 101416295A CN A200780011762X A CNA200780011762X A CN A200780011762XA CN 200780011762 A CN200780011762 A CN 200780011762A CN 101416295 A CN101416295 A CN 101416295A
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CN
China
Prior art keywords
electron beam
hole
electron
conductive layer
holes
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Pending
Application number
CNA200780011762XA
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English (en)
Chinese (zh)
Inventor
金浩燮
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CEBT Co Ltd
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CEBT Co Ltd
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Publication of CN101416295A publication Critical patent/CN101416295A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/307—Contactless testing using electron beams of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H01J2237/0635—Multiple source, e.g. comb or array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
    • H01J2237/281—Bottom of trenches or holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
CNA200780011762XA 2006-04-03 2007-04-03 孔检查装置和使用该孔检查装置的孔检查方法 Pending CN101416295A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060030129 2006-04-03
KR20060030129 2006-04-03

Publications (1)

Publication Number Publication Date
CN101416295A true CN101416295A (zh) 2009-04-22

Family

ID=38563867

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA200780011762XA Pending CN101416295A (zh) 2006-04-03 2007-04-03 孔检查装置和使用该孔检查装置的孔检查方法

Country Status (7)

Country Link
US (1) US7968844B2 (https=)
EP (1) EP2002473A4 (https=)
JP (1) JP2009532894A (https=)
KR (4) KR20130100191A (https=)
CN (1) CN101416295A (https=)
TW (1) TWI334933B (https=)
WO (1) WO2007114642A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102053106A (zh) * 2009-11-09 2011-05-11 中芯国际集成电路制造(上海)有限公司 一种缺陷检测方法
CN103474374A (zh) * 2012-06-06 2013-12-25 澁谷工业株式会社 搭载微小球的工件的修复装置
CN108615666A (zh) * 2016-12-09 2018-10-02 上海凯世通半导体股份有限公司 束流检测装置
CN108695183A (zh) * 2017-03-30 2018-10-23 格芯公司 网络跟踪先前层级减除的装置及方法
CN116807664A (zh) * 2023-07-24 2023-09-29 桂林市啄木鸟医疗器械有限公司 被覆盖孔洞的位置检测方法、装置及存储介质

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110294071A1 (en) * 2010-05-28 2011-12-01 Canon Kabushiki Kaisha Electron gun, lithography apparatus, method of manufacturing article, and electron beam apparatus
JP5719019B2 (ja) * 2010-06-03 2015-05-13 カール ツァイス エスエムエス ゲーエムベーハー フォトリソグラフィマスクの性能を判断する方法
US8399264B2 (en) * 2010-11-30 2013-03-19 Intel Corporation Alignment inspection
KR101339227B1 (ko) 2011-12-08 2013-12-11 기아자동차주식회사 자동변속기의 댐퍼 클러치 제어방법
US9304160B1 (en) 2012-05-08 2016-04-05 Kla-Tencor Corporation Defect inspection apparatus, system, and method
WO2014074649A1 (en) 2012-11-06 2014-05-15 Purdue Research Foundation Methods for directed irradiation synthesis with ion and thermal beams
JP5965851B2 (ja) * 2013-02-15 2016-08-10 株式会社日立ハイテクノロジーズ 試料観察装置
KR102086362B1 (ko) 2013-03-08 2020-03-09 삼성전자주식회사 편광화된 빛을 이용하여 공정을 모니터링하는 반도체 제조 설비 및 모니터링 방법
US9040910B2 (en) * 2013-05-23 2015-05-26 Tao Luo Multi-column electron beam inspection that uses custom printing methods
JP2015141985A (ja) * 2014-01-28 2015-08-03 株式会社東芝 検査装置、及び検査方法
KR20170031806A (ko) * 2015-08-13 2017-03-22 한국기계연구원 전자빔을 이용한 인쇄회로기판의 검사장치 및 방법
KR101720697B1 (ko) * 2016-07-06 2017-04-03 씨이비티 주식회사 대면적 전계방출원 장치에의 전자 방출원의 균일 방출 검사 방법
US11538659B2 (en) * 2018-10-25 2022-12-27 Hitachi High-Tech Corporation Charged particle beam device, autofocus processing method of charged particle beam device, and detector
IL284445B2 (en) * 2018-12-31 2026-02-01 Asml Netherlands Bv Charged particle beam system for sample scanning

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2970113B2 (ja) 1991-09-20 1999-11-02 富士通株式会社 パターン検査装置
US5384463A (en) * 1991-06-10 1995-01-24 Fujisu Limited Pattern inspection apparatus and electron beam apparatus
JP2000100369A (ja) * 1998-09-28 2000-04-07 Jeol Ltd 荷電粒子ビーム装置
JP3175765B2 (ja) * 1998-12-08 2001-06-11 日本電気株式会社 半導体ウエハーの検査方法
JP3749107B2 (ja) 1999-11-05 2006-02-22 ファブソリューション株式会社 半導体デバイス検査装置
JP3732738B2 (ja) * 2000-12-08 2006-01-11 ファブソリューション株式会社 半導体デバイス検査装置
JP2002231780A (ja) * 2001-01-30 2002-08-16 Jeol Ltd 荷電粒子ビームを用いたホールの検査方法
US7078690B2 (en) 2002-02-04 2006-07-18 Applied Materials, Israel, Ltd. Monitoring of contact hole production
US7038224B2 (en) * 2002-07-30 2006-05-02 Applied Materials, Israel, Ltd. Contact opening metrology
JP2004071954A (ja) * 2002-08-08 2004-03-04 Jeol Ltd ホールの検査方法
TWI323783B (en) * 2003-01-27 2010-04-21 Ebara Corp Mapping projection type electron beam apparatus for sample inspection by electron emitted from the sample,sample evaluation method and semiconductor device manufacturing using same
JP4080902B2 (ja) 2003-01-30 2008-04-23 株式会社トプコン 半導体デバイス解析装置および解析方法
KR100562701B1 (ko) * 2004-01-07 2006-03-23 삼성전자주식회사 전자 소스 및 이를 이용한 구멍의 오픈 불량 검사 장치와방법
JP2005233757A (ja) * 2004-02-19 2005-09-02 Oki Electric Ind Co Ltd ホールパターン検査方法及びホールパターン検査装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102053106A (zh) * 2009-11-09 2011-05-11 中芯国际集成电路制造(上海)有限公司 一种缺陷检测方法
CN103474374A (zh) * 2012-06-06 2013-12-25 澁谷工业株式会社 搭载微小球的工件的修复装置
CN103474374B (zh) * 2012-06-06 2017-07-14 澁谷工业株式会社 搭载微小球的工件的修复装置
CN108615666A (zh) * 2016-12-09 2018-10-02 上海凯世通半导体股份有限公司 束流检测装置
CN108615666B (zh) * 2016-12-09 2024-04-19 上海凯世通半导体股份有限公司 束流检测装置
CN108695183A (zh) * 2017-03-30 2018-10-23 格芯公司 网络跟踪先前层级减除的装置及方法
CN108695183B (zh) * 2017-03-30 2021-11-12 格芯(美国)集成电路科技有限公司 网络跟踪先前层级减除的装置及方法
CN116807664A (zh) * 2023-07-24 2023-09-29 桂林市啄木鸟医疗器械有限公司 被覆盖孔洞的位置检测方法、装置及存储介质

Also Published As

Publication number Publication date
US20090152461A1 (en) 2009-06-18
KR20140100477A (ko) 2014-08-14
KR20080102232A (ko) 2008-11-24
EP2002473A4 (en) 2011-08-03
JP2009532894A (ja) 2009-09-10
WO2007114642A1 (en) 2007-10-11
EP2002473A1 (en) 2008-12-17
KR20110131301A (ko) 2011-12-06
US7968844B2 (en) 2011-06-28
KR101484454B1 (ko) 2015-01-22
TWI334933B (en) 2010-12-21
TW200739110A (en) 2007-10-16
KR20130100191A (ko) 2013-09-09

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Application publication date: 20090422