TWI334933B - Hole inspection apparatus and hole inspection method using the same - Google Patents

Hole inspection apparatus and hole inspection method using the same Download PDF

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Publication number
TWI334933B
TWI334933B TW096111560A TW96111560A TWI334933B TW I334933 B TWI334933 B TW I334933B TW 096111560 A TW096111560 A TW 096111560A TW 96111560 A TW96111560 A TW 96111560A TW I334933 B TWI334933 B TW I334933B
Authority
TW
Taiwan
Prior art keywords
hole
electron beam
electron
holes
column
Prior art date
Application number
TW096111560A
Other languages
English (en)
Chinese (zh)
Other versions
TW200739110A (en
Inventor
Ho Seob Kim
Original Assignee
Cebt Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cebt Co Ltd filed Critical Cebt Co Ltd
Publication of TW200739110A publication Critical patent/TW200739110A/zh
Application granted granted Critical
Publication of TWI334933B publication Critical patent/TWI334933B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/307—Contactless testing using electron beams of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H01J2237/0635—Multiple source, e.g. comb or array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
    • H01J2237/281—Bottom of trenches or holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW096111560A 2006-04-03 2007-04-02 Hole inspection apparatus and hole inspection method using the same TWI334933B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20060030129 2006-04-03

Publications (2)

Publication Number Publication Date
TW200739110A TW200739110A (en) 2007-10-16
TWI334933B true TWI334933B (en) 2010-12-21

Family

ID=38563867

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096111560A TWI334933B (en) 2006-04-03 2007-04-02 Hole inspection apparatus and hole inspection method using the same

Country Status (7)

Country Link
US (1) US7968844B2 (https=)
EP (1) EP2002473A4 (https=)
JP (1) JP2009532894A (https=)
KR (4) KR20130100191A (https=)
CN (1) CN101416295A (https=)
TW (1) TWI334933B (https=)
WO (1) WO2007114642A1 (https=)

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* Cited by examiner, † Cited by third party
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CN102053106B (zh) * 2009-11-09 2013-03-27 中芯国际集成电路制造(上海)有限公司 一种缺陷检测方法
US20110294071A1 (en) * 2010-05-28 2011-12-01 Canon Kabushiki Kaisha Electron gun, lithography apparatus, method of manufacturing article, and electron beam apparatus
JP5719019B2 (ja) * 2010-06-03 2015-05-13 カール ツァイス エスエムエス ゲーエムベーハー フォトリソグラフィマスクの性能を判断する方法
US8399264B2 (en) * 2010-11-30 2013-03-19 Intel Corporation Alignment inspection
KR101339227B1 (ko) 2011-12-08 2013-12-11 기아자동차주식회사 자동변속기의 댐퍼 클러치 제어방법
US9304160B1 (en) 2012-05-08 2016-04-05 Kla-Tencor Corporation Defect inspection apparatus, system, and method
JP6069723B2 (ja) * 2012-06-06 2017-02-01 澁谷工業株式会社 微小ボール搭載ワークのリペア装置
WO2014074649A1 (en) 2012-11-06 2014-05-15 Purdue Research Foundation Methods for directed irradiation synthesis with ion and thermal beams
JP5965851B2 (ja) * 2013-02-15 2016-08-10 株式会社日立ハイテクノロジーズ 試料観察装置
KR102086362B1 (ko) 2013-03-08 2020-03-09 삼성전자주식회사 편광화된 빛을 이용하여 공정을 모니터링하는 반도체 제조 설비 및 모니터링 방법
US9040910B2 (en) * 2013-05-23 2015-05-26 Tao Luo Multi-column electron beam inspection that uses custom printing methods
JP2015141985A (ja) * 2014-01-28 2015-08-03 株式会社東芝 検査装置、及び検査方法
KR20170031806A (ko) * 2015-08-13 2017-03-22 한국기계연구원 전자빔을 이용한 인쇄회로기판의 검사장치 및 방법
KR101720697B1 (ko) * 2016-07-06 2017-04-03 씨이비티 주식회사 대면적 전계방출원 장치에의 전자 방출원의 균일 방출 검사 방법
CN108615666B (zh) * 2016-12-09 2024-04-19 上海凯世通半导体股份有限公司 束流检测装置
US10649026B2 (en) * 2017-03-30 2020-05-12 Globalfoundries Inc. Apparatus for and method of net trace prior level subtraction
US11538659B2 (en) * 2018-10-25 2022-12-27 Hitachi High-Tech Corporation Charged particle beam device, autofocus processing method of charged particle beam device, and detector
IL284445B2 (en) * 2018-12-31 2026-02-01 Asml Netherlands Bv Charged particle beam system for sample scanning
CN116807664A (zh) * 2023-07-24 2023-09-29 桂林市啄木鸟医疗器械有限公司 被覆盖孔洞的位置检测方法、装置及存储介质

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Publication number Priority date Publication date Assignee Title
JP2970113B2 (ja) 1991-09-20 1999-11-02 富士通株式会社 パターン検査装置
US5384463A (en) * 1991-06-10 1995-01-24 Fujisu Limited Pattern inspection apparatus and electron beam apparatus
JP2000100369A (ja) * 1998-09-28 2000-04-07 Jeol Ltd 荷電粒子ビーム装置
JP3175765B2 (ja) * 1998-12-08 2001-06-11 日本電気株式会社 半導体ウエハーの検査方法
JP3749107B2 (ja) 1999-11-05 2006-02-22 ファブソリューション株式会社 半導体デバイス検査装置
JP3732738B2 (ja) * 2000-12-08 2006-01-11 ファブソリューション株式会社 半導体デバイス検査装置
JP2002231780A (ja) * 2001-01-30 2002-08-16 Jeol Ltd 荷電粒子ビームを用いたホールの検査方法
US7078690B2 (en) 2002-02-04 2006-07-18 Applied Materials, Israel, Ltd. Monitoring of contact hole production
US7038224B2 (en) * 2002-07-30 2006-05-02 Applied Materials, Israel, Ltd. Contact opening metrology
JP2004071954A (ja) * 2002-08-08 2004-03-04 Jeol Ltd ホールの検査方法
TWI323783B (en) * 2003-01-27 2010-04-21 Ebara Corp Mapping projection type electron beam apparatus for sample inspection by electron emitted from the sample,sample evaluation method and semiconductor device manufacturing using same
JP4080902B2 (ja) 2003-01-30 2008-04-23 株式会社トプコン 半導体デバイス解析装置および解析方法
KR100562701B1 (ko) * 2004-01-07 2006-03-23 삼성전자주식회사 전자 소스 및 이를 이용한 구멍의 오픈 불량 검사 장치와방법
JP2005233757A (ja) * 2004-02-19 2005-09-02 Oki Electric Ind Co Ltd ホールパターン検査方法及びホールパターン検査装置

Also Published As

Publication number Publication date
US20090152461A1 (en) 2009-06-18
KR20140100477A (ko) 2014-08-14
CN101416295A (zh) 2009-04-22
KR20080102232A (ko) 2008-11-24
EP2002473A4 (en) 2011-08-03
JP2009532894A (ja) 2009-09-10
WO2007114642A1 (en) 2007-10-11
EP2002473A1 (en) 2008-12-17
KR20110131301A (ko) 2011-12-06
US7968844B2 (en) 2011-06-28
KR101484454B1 (ko) 2015-01-22
TW200739110A (en) 2007-10-16
KR20130100191A (ko) 2013-09-09

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