KR20110046501A - 향상된 보론 구속을 갖는, 임베드된 ｓｉ/ｇｅ 물질을 구비한 트랜지스터 - Google Patents

향상된 보론 구속을 갖는, 임베드된 ｓｉ/ｇｅ 물질을 구비한 트랜지스터 Download PDF

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KR20110046501A
KR20110046501A KR1020117004347A KR20117004347A KR20110046501A KR 20110046501 A KR20110046501 A KR 20110046501A KR 1020117004347 A KR1020117004347 A KR 1020117004347A KR 20117004347 A KR20117004347 A KR 20117004347A KR 20110046501 A KR20110046501 A KR 20110046501A
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South Korea
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species
drain
diffusion
source regions
transistor
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KR1020117004347A
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English (en)
Korean (ko)
Inventor
잔 호엔트쉘
마셰이 비아트르
바실리오스 파파게오르규우
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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Publication of KR20110046501A publication Critical patent/KR20110046501A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1020117004347A 2008-07-31 2009-07-31 향상된 보론 구속을 갖는, 임베드된 ｓｉ/ｇｅ 물질을 구비한 트랜지스터 Withdrawn KR20110046501A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008035806.1 2008-07-31
DE102008035806A DE102008035806B4 (de) 2008-07-31 2008-07-31 Herstellungsverfahren für ein Halbleiterbauelement bzw. einen Transistor mit eingebettetem Si/GE-Material mit einem verbesserten Boreinschluss sowie Transistor
US12/503,340 2009-07-15
US12/503,340 US20100025743A1 (en) 2008-07-31 2009-07-15 Transistor with embedded si/ge material having enhanced boron confinement
PCT/US2009/004425 WO2010014251A2 (en) 2008-07-31 2009-07-31 Transistor with embedded si/ge material having enhanced boron confinement

Publications (1)

Publication Number Publication Date
KR20110046501A true KR20110046501A (ko) 2011-05-04

Family

ID=41461560

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117004347A Withdrawn KR20110046501A (ko) 2008-07-31 2009-07-31 향상된 보론 구속을 갖는, 임베드된 ｓｉ/ｇｅ 물질을 구비한 트랜지스터

Country Status (8)

Country Link
US (1) US20100025743A1 (https=)
JP (1) JP2011530167A (https=)
KR (1) KR20110046501A (https=)
CN (1) CN102105965A (https=)
DE (1) DE102008035806B4 (https=)
GB (1) GB2474170B (https=)
TW (1) TW201017773A (https=)
WO (1) WO2010014251A2 (https=)

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US20110012177A1 (en) * 2009-07-20 2011-01-20 International Business Machines Corporation Nanostructure For Changing Electric Mobility
KR20120107762A (ko) * 2011-03-22 2012-10-04 삼성전자주식회사 반도체 소자의 제조 방법
US9263342B2 (en) * 2012-03-02 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having a strained region
US8674447B2 (en) 2012-04-27 2014-03-18 International Business Machines Corporation Transistor with improved sigma-shaped embedded stressor and method of formation
US9165944B2 (en) 2013-10-07 2015-10-20 Globalfoundries Inc. Semiconductor device including SOI butted junction to reduce short-channel penalty
US10153371B2 (en) 2014-02-07 2018-12-11 Stmicroelectronics, Inc. Semiconductor device with fins including sidewall recesses
US9190516B2 (en) * 2014-02-21 2015-11-17 Globalfoundries Inc. Method for a uniform compressive strain layer and device thereof
US9190418B2 (en) 2014-03-18 2015-11-17 Globalfoundries U.S. 2 Llc Junction butting in SOI transistor with embedded source/drain
US9466718B2 (en) 2014-03-31 2016-10-11 Stmicroelectronics, Inc. Semiconductor device with fin and related methods
US10008568B2 (en) * 2015-03-30 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure
US9741853B2 (en) 2015-10-29 2017-08-22 Globalfoundries Inc. Stress memorization techniques for transistor devices
JP7150524B2 (ja) * 2018-08-24 2022-10-11 キオクシア株式会社 半導体装置

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US5770485A (en) * 1997-03-04 1998-06-23 Advanced Micro Devices, Inc. MOSFET device with an amorphized source and fabrication method thereof
JPH10308361A (ja) * 1997-05-07 1998-11-17 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5877056A (en) * 1998-01-08 1999-03-02 Texas Instruments-Acer Incorporated Ultra-short channel recessed gate MOSFET with a buried contact
US6580639B1 (en) * 1999-08-10 2003-06-17 Advanced Micro Devices, Inc. Method of reducing program disturbs in NAND type flash memory devices
JP2002057118A (ja) * 2000-08-09 2002-02-22 Toshiba Corp 半導体装置とその製造方法
US6657223B1 (en) * 2002-10-29 2003-12-02 Advanced Micro Devices, Inc. Strained silicon MOSFET having silicon source/drain regions and method for its fabrication
KR100588786B1 (ko) * 2003-09-18 2006-06-12 동부일렉트로닉스 주식회사 반도체 소자 제조방법
JP4375619B2 (ja) * 2004-05-26 2009-12-02 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4837902B2 (ja) * 2004-06-24 2011-12-14 富士通セミコンダクター株式会社 半導体装置
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US7612421B2 (en) * 2005-10-11 2009-11-03 Atmel Corporation Electronic device with dopant diffusion barrier and tunable work function and methods of making same
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Also Published As

Publication number Publication date
JP2011530167A (ja) 2011-12-15
WO2010014251A3 (en) 2010-04-08
GB2474170A (en) 2011-04-06
DE102008035806B4 (de) 2010-06-10
CN102105965A (zh) 2011-06-22
GB201100855D0 (en) 2011-03-02
US20100025743A1 (en) 2010-02-04
GB2474170B (en) 2012-08-22
WO2010014251A2 (en) 2010-02-04
DE102008035806A1 (de) 2010-02-04
TW201017773A (en) 2010-05-01

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