GB2474170B - Transistor with embedded si/ge material having enhanced boron confinement - Google Patents

Transistor with embedded si/ge material having enhanced boron confinement

Info

Publication number
GB2474170B
GB2474170B GB1100855.4A GB201100855A GB2474170B GB 2474170 B GB2474170 B GB 2474170B GB 201100855 A GB201100855 A GB 201100855A GB 2474170 B GB2474170 B GB 2474170B
Authority
GB
United Kingdom
Prior art keywords
confinement
transistor
embedded
enhanced boron
boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1100855.4A
Other versions
GB201100855D0 (en
GB2474170A (en
Inventor
Jan Hoentschel
Maciej Wiatr
Vassilios Papageorgiou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of GB201100855D0 publication Critical patent/GB201100855D0/en
Publication of GB2474170A publication Critical patent/GB2474170A/en
Application granted granted Critical
Publication of GB2474170B publication Critical patent/GB2474170B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
GB1100855.4A 2008-07-31 2009-07-31 Transistor with embedded si/ge material having enhanced boron confinement Active GB2474170B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008035806A DE102008035806B4 (en) 2008-07-31 2008-07-31 Process for manufacturing a semiconductor device or a transistor with embedded Si / GE material with improved boron inclusion and transistor
US12/503,340 US20100025743A1 (en) 2008-07-31 2009-07-15 Transistor with embedded si/ge material having enhanced boron confinement
PCT/US2009/004425 WO2010014251A2 (en) 2008-07-31 2009-07-31 Transistor with embedded si/ge material having enhanced boron confinement

Publications (3)

Publication Number Publication Date
GB201100855D0 GB201100855D0 (en) 2011-03-02
GB2474170A GB2474170A (en) 2011-04-06
GB2474170B true GB2474170B (en) 2012-08-22

Family

ID=41461560

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1100855.4A Active GB2474170B (en) 2008-07-31 2009-07-31 Transistor with embedded si/ge material having enhanced boron confinement

Country Status (8)

Country Link
US (1) US20100025743A1 (en)
JP (1) JP2011530167A (en)
KR (1) KR20110046501A (en)
CN (1) CN102105965A (en)
DE (1) DE102008035806B4 (en)
GB (1) GB2474170B (en)
TW (1) TW201017773A (en)
WO (1) WO2010014251A2 (en)

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US20110012177A1 (en) * 2009-07-20 2011-01-20 International Business Machines Corporation Nanostructure For Changing Electric Mobility
US8368125B2 (en) 2009-07-20 2013-02-05 International Business Machines Corporation Multiple orientation nanowires with gate stack stressors
KR20120107762A (en) * 2011-03-22 2012-10-04 삼성전자주식회사 Methods of fabricating semiconductor devices
US9263342B2 (en) * 2012-03-02 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having a strained region
US8674447B2 (en) 2012-04-27 2014-03-18 International Business Machines Corporation Transistor with improved sigma-shaped embedded stressor and method of formation
US9165944B2 (en) 2013-10-07 2015-10-20 Globalfoundries Inc. Semiconductor device including SOI butted junction to reduce short-channel penalty
US10153371B2 (en) 2014-02-07 2018-12-11 Stmicroelectronics, Inc. Semiconductor device with fins including sidewall recesses
US9190516B2 (en) * 2014-02-21 2015-11-17 Globalfoundries Inc. Method for a uniform compressive strain layer and device thereof
US9190418B2 (en) 2014-03-18 2015-11-17 Globalfoundries U.S. 2 Llc Junction butting in SOI transistor with embedded source/drain
US9466718B2 (en) 2014-03-31 2016-10-11 Stmicroelectronics, Inc. Semiconductor device with fin and related methods
US10008568B2 (en) 2015-03-30 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure
US9741853B2 (en) * 2015-10-29 2017-08-22 Globalfoundries Inc. Stress memorization techniques for transistor devices
JP7150524B2 (en) * 2018-08-24 2022-10-11 キオクシア株式会社 semiconductor equipment

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US20060148220A1 (en) * 2005-01-04 2006-07-06 Nick Lindert Plasma implantation of impurities in junction region recesses

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JPH10308361A (en) * 1997-05-07 1998-11-17 Mitsubishi Electric Corp Semiconductor device and manufacture of the same
US5877056A (en) * 1998-01-08 1999-03-02 Texas Instruments-Acer Incorporated Ultra-short channel recessed gate MOSFET with a buried contact
US6580639B1 (en) * 1999-08-10 2003-06-17 Advanced Micro Devices, Inc. Method of reducing program disturbs in NAND type flash memory devices
JP2002057118A (en) * 2000-08-09 2002-02-22 Toshiba Corp Semiconductor device and its manufacturing method
US6657223B1 (en) * 2002-10-29 2003-12-02 Advanced Micro Devices, Inc. Strained silicon MOSFET having silicon source/drain regions and method for its fabrication
KR100588786B1 (en) * 2003-09-18 2006-06-12 동부일렉트로닉스 주식회사 Fabricating method of semiconductor device
JP4375619B2 (en) * 2004-05-26 2009-12-02 富士通マイクロエレクトロニクス株式会社 Manufacturing method of semiconductor device
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US20060148220A1 (en) * 2005-01-04 2006-07-06 Nick Lindert Plasma implantation of impurities in junction region recesses

Non-Patent Citations (1)

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Also Published As

Publication number Publication date
DE102008035806B4 (en) 2010-06-10
TW201017773A (en) 2010-05-01
DE102008035806A1 (en) 2010-02-04
JP2011530167A (en) 2011-12-15
US20100025743A1 (en) 2010-02-04
WO2010014251A2 (en) 2010-02-04
GB201100855D0 (en) 2011-03-02
CN102105965A (en) 2011-06-22
GB2474170A (en) 2011-04-06
WO2010014251A3 (en) 2010-04-08
KR20110046501A (en) 2011-05-04

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