KR20100109492A - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR20100109492A
KR20100109492A KR1020100028470A KR20100028470A KR20100109492A KR 20100109492 A KR20100109492 A KR 20100109492A KR 1020100028470 A KR1020100028470 A KR 1020100028470A KR 20100028470 A KR20100028470 A KR 20100028470A KR 20100109492 A KR20100109492 A KR 20100109492A
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KR
South Korea
Prior art keywords
high frequency
coil
coils
frequency power
plasma
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KR1020100028470A
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English (en)
Korean (ko)
Inventor
치시오 코시미즈
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20100109492A publication Critical patent/KR20100109492A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
KR1020100028470A 2009-03-31 2010-03-30 플라즈마 처리 장치 KR20100109492A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009086470A JP5231308B2 (ja) 2009-03-31 2009-03-31 プラズマ処理装置
JPJP-P-2009-086470 2009-03-31

Publications (1)

Publication Number Publication Date
KR20100109492A true KR20100109492A (ko) 2010-10-08

Family

ID=42782669

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100028470A KR20100109492A (ko) 2009-03-31 2010-03-30 플라즈마 처리 장치

Country Status (5)

Country Link
US (1) US20100243162A1 (zh)
JP (1) JP5231308B2 (zh)
KR (1) KR20100109492A (zh)
CN (1) CN101853764A (zh)
TW (1) TWI595807B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120112184A (ko) * 2011-03-29 2012-10-11 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011102083A1 (ja) * 2010-02-19 2013-06-17 株式会社アルバック プラズマ処理装置及びプラズマ処理方法
JP5745812B2 (ja) * 2010-10-27 2015-07-08 東京エレクトロン株式会社 プラズマ処理装置
JP5800532B2 (ja) * 2011-03-03 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
WO2012161231A1 (ja) * 2011-05-24 2012-11-29 イマジニアリング株式会社 電磁波放射装置
JP4844697B1 (ja) * 2011-06-24 2011-12-28 日新電機株式会社 プラズマ処理装置
US10225919B2 (en) 2011-06-30 2019-03-05 Aes Global Holdings, Pte. Ltd Projected plasma source
JP2013105664A (ja) * 2011-11-15 2013-05-30 Tokyo Electron Ltd 高周波アンテナ回路及び誘導結合プラズマ処理装置
JP6010305B2 (ja) * 2012-02-07 2016-10-19 東京エレクトロン株式会社 誘導結合プラズマ用アンテナユニット、誘導結合プラズマ処理装置および誘導結合プラズマ処理方法
JP6009171B2 (ja) * 2012-02-14 2016-10-19 東京エレクトロン株式会社 基板処理装置
JP2013182966A (ja) * 2012-03-01 2013-09-12 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
CN103311084B (zh) * 2012-03-13 2016-03-30 中微半导体设备(上海)有限公司 一种调节等离子体处理腔电场分布的供电系统
US20130256271A1 (en) * 2012-04-03 2013-10-03 Theodoros Panagopoulos Methods and apparatuses for controlling plasma in a plasma processing chamber
US9082591B2 (en) * 2012-04-24 2015-07-14 Applied Materials, Inc. Three-coil inductively coupled plasma source with individually controlled coil currents from a single RF power generator
US9111722B2 (en) * 2012-04-24 2015-08-18 Applied Materials, Inc. Three-coil inductively coupled plasma source with individually controlled coil currents from a single RF power generator
KR101471549B1 (ko) * 2013-05-31 2014-12-11 세메스 주식회사 플라즈마 발생 장치 및 그를 포함하는 기판 처리 장치
US9779953B2 (en) * 2013-09-25 2017-10-03 Applied Materials, Inc. Electromagnetic dipole for plasma density tuning in a substrate processing chamber
JP2015138602A (ja) * 2014-01-21 2015-07-30 株式会社アルバック プラズマ処理用整合器、プラズマ処理装置、および、プラズマ処理用整合器の駆動方法
CN104810238A (zh) * 2014-01-23 2015-07-29 北京北方微电子基地设备工艺研究中心有限责任公司 匀气结构及等离子体系统
JP2015156326A (ja) * 2014-02-21 2015-08-27 日新電機株式会社 プラズマ発生装置用の高周波電流の測定方法および測定装置
JP6317139B2 (ja) * 2014-03-04 2018-04-25 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法及びプラズマ処理装置
KR101522891B1 (ko) 2014-04-29 2015-05-27 세메스 주식회사 플라즈마 발생 유닛 및 그를 포함하는 기판 처리 장치
US10410889B2 (en) * 2014-07-25 2019-09-10 Applied Materials, Inc. Systems and methods for electrical and magnetic uniformity and skew tuning in plasma processing reactors
JP6623511B2 (ja) * 2014-11-05 2019-12-25 東京エレクトロン株式会社 プラズマ処理装置
JP6062461B2 (ja) * 2015-01-30 2017-01-18 東京エレクトロン株式会社 プラズマ処理装置
JP6097317B2 (ja) * 2015-01-30 2017-03-15 東京エレクトロン株式会社 プラズマ処理方法
KR102316591B1 (ko) * 2015-04-30 2021-10-25 에스케이하이닉스 주식회사 유도결합형 플라즈마 발생장치용 안테나 및 그의 제어방법과 그를 포함하는 유도결합 플라즈마 발생장치
JP6668384B2 (ja) * 2015-06-15 2020-03-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ コイルアセンブリ、コイルアセンブリを用いてトレンチを形成する方法及びエッチングリアクタ
US20170133202A1 (en) * 2015-11-09 2017-05-11 Lam Research Corporation Computer addressable plasma density modification for etch and deposition processes
CN106937472A (zh) * 2015-12-29 2017-07-07 中微半导体设备(上海)有限公司 等离子体处理装置及等离子体处理方法
CN107316794B (zh) * 2016-04-26 2019-10-29 北京北方华创微电子装备有限公司 一种半导体处理装置
CN107333378B (zh) * 2016-04-29 2019-05-03 中微半导体设备(上海)股份有限公司 一种电感耦合等离子处理装置及其控制方法
TWI620228B (zh) 2016-12-29 2018-04-01 財團法人工業技術研究院 電漿處理裝置與電漿處理方法
KR101965573B1 (ko) * 2017-04-26 2019-04-08 세메스 주식회사 전력 공급 장치 및 그를 포함하는 기판 처리 장치
CN109216144B (zh) * 2017-07-03 2021-08-06 中微半导体设备(上海)股份有限公司 一种具有低频射频功率分布调节功能的等离子反应器
US11521828B2 (en) * 2017-10-09 2022-12-06 Applied Materials, Inc. Inductively coupled plasma source
KR101972783B1 (ko) * 2017-10-13 2019-08-16 주식회사 유진테크 Icp 안테나 및 이를 포함하는 플라즈마 처리 장치
CN110536533A (zh) * 2018-06-07 2019-12-03 北京北方华创微电子装备有限公司 上电极系统、等离子体腔室及等离子体产生方法
CN110706993B (zh) * 2018-07-10 2022-04-22 北京北方华创微电子装备有限公司 电感耦合装置和半导体处理设备
JP7221115B2 (ja) * 2019-04-03 2023-02-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7352068B2 (ja) * 2019-07-12 2023-09-28 日新電機株式会社 プラズマ制御システム
KR102041518B1 (ko) * 2019-07-18 2019-11-06 에이피티씨 주식회사 분리형 플라즈마 소스 코일 및 이의 제어 방법
KR102137913B1 (ko) * 2019-10-29 2020-07-24 주식회사 기가레인 플라즈마 안테나 모듈
CN112216591A (zh) * 2020-10-12 2021-01-12 长江存储科技有限责任公司 晶圆结构的刻蚀装置及刻蚀方法
WO2022107407A1 (ja) * 2020-11-20 2022-05-27 株式会社アルバック 高周波電力回路、プラズマ処理装置、およびプラズマ処理方法
KR102475206B1 (ko) 2020-11-20 2022-12-07 가부시키가이샤 알박 고주파 전력 회로, 플라즈마 처리 장치 및 플라즈마 처리 방법
CN116453925B (zh) * 2023-06-16 2023-08-25 通威微电子有限公司 磁控增强等离子抛光装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122431A (en) * 1988-09-14 1992-06-16 Fujitsu Limited Thin film formation apparatus
US6077384A (en) * 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
JP3112610B2 (ja) * 1994-02-22 2000-11-27 東京エレクトロン株式会社 プラズマ発生装置
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6164241A (en) * 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
JP4046207B2 (ja) * 1998-08-06 2008-02-13 株式会社エフオーアイ プラズマ処理装置
US6217718B1 (en) * 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
US6447636B1 (en) * 2000-02-16 2002-09-10 Applied Materials, Inc. Plasma reactor with dynamic RF inductive and capacitive coupling control
US6414648B1 (en) * 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
EP1301938A2 (en) * 2000-07-06 2003-04-16 Applied Materials, Inc. A plasma reactor having a symmetric parallel conductor coil antenna
JP2002124399A (ja) * 2000-10-13 2002-04-26 Sci Technol Kk プラズマ生成装置
JP3640609B2 (ja) * 2000-10-16 2005-04-20 アルプス電気株式会社 プラズマ処理装置，プラズマ処理システムおよびこれらの性能確認システム，検査方法
JP3462865B2 (ja) * 2001-07-10 2003-11-05 三菱重工業株式会社 給電アンテナ及び半導体製造装置
US7571697B2 (en) * 2001-09-14 2009-08-11 Lam Research Corporation Plasma processor coil
JP4111383B2 (ja) * 2002-11-27 2008-07-02 株式会社エフオーアイ プラズマ発生装置
US7504041B2 (en) * 2006-05-03 2009-03-17 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator
JP2007311182A (ja) * 2006-05-18 2007-11-29 Tokyo Electron Ltd 誘導結合プラズマ処理装置およびプラズマ処理方法
CN101136279B (zh) * 2006-08-28 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合线圈及电感耦合等离子体装置
US20080156631A1 (en) * 2006-12-27 2008-07-03 Novellus Systems, Inc. Methods of Producing Plasma in a Container
JP4928991B2 (ja) * 2007-03-12 2012-05-09 東京エレクトロン株式会社 基板処理装置
US9591738B2 (en) * 2008-04-03 2017-03-07 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120112184A (ko) * 2011-03-29 2012-10-11 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
US9953811B2 (en) 2011-03-29 2018-04-24 Tokyo Electron Limited Plasma processing method

Also Published As

Publication number Publication date
TWI595807B (zh) 2017-08-11
JP5231308B2 (ja) 2013-07-10
TW201127222A (en) 2011-08-01
US20100243162A1 (en) 2010-09-30
CN101853764A (zh) 2010-10-06
JP2010238981A (ja) 2010-10-21

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