KR20100103043A - 발광소자 및 그 제조방법 - Google Patents
발광소자 및 그 제조방법 Download PDFInfo
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- KR20100103043A KR20100103043A KR1020090021441A KR20090021441A KR20100103043A KR 20100103043 A KR20100103043 A KR 20100103043A KR 1020090021441 A KR1020090021441 A KR 1020090021441A KR 20090021441 A KR20090021441 A KR 20090021441A KR 20100103043 A KR20100103043 A KR 20100103043A
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- Prior art keywords
- light emitting
- layer
- emitting structure
- light
- electrode
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 31
- 238000000605 extraction Methods 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 229910010421 TiNx Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229910007541 Zn O Inorganic materials 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 106
- 239000000758 substrate Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- OMKCMEGHMLKVPM-UHFFFAOYSA-N CC=CC=C[Mg] Chemical compound CC=CC=C[Mg] OMKCMEGHMLKVPM-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- QHMGJGNTMQDRQA-UHFFFAOYSA-N dotriacontane Chemical group CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC QHMGJGNTMQDRQA-UHFFFAOYSA-N 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (13)
- 제1 도전형 반도체층, 활성층, 제2 도전형 반도체층을 포함하는 발광구조물;상기 발광구조물 외곽에 형성된 절연층;상기 발광구조물 상에 제1 전극;상기 발광구조물 상에 광탈출층; 및상기 제1 전극 상에 패드;를 포함하는 발광소자.
- 제1 항에 있어서,상기 제1 전극은상기 발광구조물 상에 날개형태(wing type) 또는 격자형태로 형성되는 발광소자.
- 제1 항에 있어서,상기 광탈출층은,상기 제1 전극 상에도 형성되는 발광소자.
- 제1 항에 있어서,상기 광탈출층은,유전체막 또는 전도성막으로 형성되는 발광소자.
- 제1 항에 있어서,상기 광탈출층은상기 발광구조물의 굴절률과 상기 발광구조물에 대한 배경물질의 굴절율 사이의 굴절률 값을 가지는 유전체막 또는 전도성막으로 형성되는 발광소자.
- 제1 항에 있어서,상기 광탈출층은TiO2, Al2O3, ZnO, MgF2, In2O3, SnO2, TiNx, Ga2O3, ITO, In-Zn-O, ZnO:Al 중 적어도 하나를 포함하는 발광소자.
- 제1 도전형 반도체층, 활성층, 제2 도전형 반도체층을 포함하는 발광구조물을 형성하는 단계;상기 발광구조물 외곽에 절연층을 형성하는 단계;상기 발광구조물 상에 제1 전극을 형성하는 단계;상기 발광구조물 상에 광탈출층을 형성하는 단계;상기 광탈출층의 일부를 제거하여 상기 제1 전극을 노출시키는 단계; 및상기 노출된 제1 전극 상에 패드를 형성하는 단계;를 포함하는 발광소자의 제조방법.
- 제7 항에 있어서,상기 제1 전극을 형성하는 단계는,상기 발광구조물 상에 날개형태(wing type) 또는 격자형태로 형성하는 발광소자의 제조방법.
- 제7 항에 있어서,상기 발광구조물 상에 광탈출층을 형성하는 단계는,증착공정 또는 성장공정으로 광탈출층을 형성하는 발광소자의 제조방법.
- 제7 항에 있어서,상기 발광구조물 상에 광탈출층을 형성하는 단계는,유전체막 또는 전도성막으로 광탈출층을 형성하는 발광소자의 제조방법.
- 제7 항에 있어서,상기 발광구조물 상에 광탈출층을 형성하는 단계는,상기 발광구조물의 굴절률과 상기 발광구조물에 대한 배경물질의 굴절율 사이의 굴절률 값을 가지는 유전체막 또는 전도성막으로 광탈출층을 형성하는 발광소자의 제조방법.
- 제7 항에 있어서,상기 발광구조물 상에 광탈출층을 형성하는 단계는,TiO2, Al2O3, ZnO, MgF2, In2O3, SnO2, TiNx, Ga2O3, ITO, In-Zn-O, ZnO:Al 중 적어도 하나를 포함하여 형성하는 발광소자의 제조방법.
- 제7 항에 있어서,상기 노출된 제1 전극 상에 패드를 형성하는 단계는,상기 노출된 제1 전극 외의 영역에 패턴을 형성하는 단계;상기 패턴을 포함하는 상기 발광구조물 위에 패드용 물질을 형성하는 단계; 및상기 패턴을 제거하여 상기 제1 전극 상에 패드를 형성하는 단계;를 포함하는 발광소자의 제조방법.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090021441A KR100999756B1 (ko) | 2009-03-13 | 2009-03-13 | 발광소자 및 그 제조방법 |
EP09178828.1A EP2228839B1 (en) | 2009-03-13 | 2009-12-11 | Light emitting diode |
CN2010100044177A CN101834242B (zh) | 2009-03-13 | 2010-01-15 | 发光器件 |
US12/693,239 US8193536B2 (en) | 2009-03-13 | 2010-01-25 | Light emitting device |
JP2010043941A JP5677753B2 (ja) | 2009-03-13 | 2010-03-01 | 発光素子及びその製造方法 |
TW099106094A TW201034252A (en) | 2009-03-13 | 2010-03-03 | Light emitting device |
US13/439,668 US8482034B2 (en) | 2009-03-13 | 2012-04-04 | Light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020090021441A KR100999756B1 (ko) | 2009-03-13 | 2009-03-13 | 발광소자 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100103043A true KR20100103043A (ko) | 2010-09-27 |
KR100999756B1 KR100999756B1 (ko) | 2010-12-08 |
Family
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KR1020090021441A KR100999756B1 (ko) | 2009-03-13 | 2009-03-13 | 발광소자 및 그 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8193536B2 (ko) |
EP (1) | EP2228839B1 (ko) |
JP (1) | JP5677753B2 (ko) |
KR (1) | KR100999756B1 (ko) |
CN (1) | CN101834242B (ko) |
TW (1) | TW201034252A (ko) |
Families Citing this family (7)
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KR100986440B1 (ko) * | 2009-04-28 | 2010-10-08 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
TWI463700B (zh) * | 2012-12-27 | 2014-12-01 | Genesis Photonics Inc | 發光元件的電極墊結構 |
TWI577045B (zh) * | 2013-07-10 | 2017-04-01 | 晶元光電股份有限公司 | 發光元件 |
US10002991B2 (en) | 2013-07-10 | 2018-06-19 | Epistar Corporation | Light-emitting element |
US9318663B2 (en) | 2013-07-10 | 2016-04-19 | Epistar Corporation | Light-emitting element |
CN105720175B (zh) * | 2016-03-23 | 2018-04-24 | 华灿光电(苏州)有限公司 | 一种发光二极管的封装方法 |
US20220209166A1 (en) * | 2019-04-11 | 2022-06-30 | Sharp Kabushiki Kaisha | Light-emitting element and display device |
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2009
- 2009-03-13 KR KR1020090021441A patent/KR100999756B1/ko active IP Right Grant
- 2009-12-11 EP EP09178828.1A patent/EP2228839B1/en not_active Not-in-force
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2010
- 2010-01-15 CN CN2010100044177A patent/CN101834242B/zh not_active Expired - Fee Related
- 2010-01-25 US US12/693,239 patent/US8193536B2/en active Active
- 2010-03-01 JP JP2010043941A patent/JP5677753B2/ja active Active
- 2010-03-03 TW TW099106094A patent/TW201034252A/zh unknown
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2012
- 2012-04-04 US US13/439,668 patent/US8482034B2/en active Active
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US20120193668A1 (en) | 2012-08-02 |
JP2010219521A (ja) | 2010-09-30 |
TW201034252A (en) | 2010-09-16 |
EP2228839A3 (en) | 2015-04-01 |
CN101834242B (zh) | 2012-11-28 |
US8193536B2 (en) | 2012-06-05 |
EP2228839A2 (en) | 2010-09-15 |
CN101834242A (zh) | 2010-09-15 |
US20100230699A1 (en) | 2010-09-16 |
EP2228839B1 (en) | 2019-02-13 |
KR100999756B1 (ko) | 2010-12-08 |
US8482034B2 (en) | 2013-07-09 |
JP5677753B2 (ja) | 2015-02-25 |
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